Abstract: A trace controller receives data access information during load instruction execution and ID (AID) of a load/store buffer to store the data access information during load instruction execution. Then, it generates trace control information TC based on the received data access information and selects a buffer to store the generated trace control information from a plurality of trace control buffers according to the received AID. After that, it receives read data information after load instruction execution and ID (RID) of a load/store buffer used for load instruction execution. Finally, it selects a buffer storing the trace control information TC from the plurality of trace control buffers according to the RID.

Abstract: In one embodiment of the present invention, provided is a semiconductor device having a silicon substrate provided with a DRAM region containing first transistors and capacitor elements, and with a logic region containing second transistors. A minimum gate length of the second transistors provided in the logic region is smaller than a minimum gate length of the first transistors provided in the DRAM region. One of a cobalt silicide layer and a titanium silicide layer is provided on source/drain regions and on gate electrodes of the first transistors provided in the DRAM region, and a nickel-containing silicide layer is provided on source/drain regions and on gate electrodes of the second transistors provided in the logic region.

Abstract: A waveform generating circuit includes a constant current circuit that supplies a constant current through a power source; a current mirror circuit that flows an output current that is n times an input current; and a switching circuit that switches a flowing direction of the current in the constant current circuit between the current mirror circuit and the output terminal according to the logical level of the rectangle input signal. The waveform generating circuit generates a triangle wave having a falling slope waveform that is n times the rising slope. On the other hand, the waveform generating circuit that receives an inverted signal of the signal generates a triangle wave and its voltage is compared with another in the comparator to generate an output signal.

Abstract: A method of manufacturing a semiconductor device includes: forming a groove portion in a dicing region of an insulating layer and forming a via hole in an internal circuit formation region; providing a first resist film on the insulating layer; providing a second resist film to cover the first resist film; forming an interconnect opening in a region covering an internal circuit formation region of the second resist film and forming a position aligning opening in a region covering the dicing region of the second resist film; and detecting a positional relationship between the groove portion and the position aligning opening so as to detect whether the interconnect opening of the second resist film exists at a predetermined position with respect to the via hole of the insulating layer. In selective removing of the second resist film, the position aligning opening is formed such that a region of the position aligning opening covers the groove portion of the insulating layer.

Abstract: A semiconductor device of the present invention has a first-conductivity-type substrate having second-conductivity-type base regions exposed to a first surface thereof; trench gates provided to a first surface of the substrate; first-conductivity-type source regions formed shallower than the base regions; a plurality of second-conductivity-type column regions located between two adjacent trench gates in a plan view, while being spaced from each other in a second direction normal to the first direction; the center of each column region and the center of each base contact region fall on the center line between two trench gates; and has no column region formed below the trench gates.

Abstract: A bidirectional switch includes a first switch and a second switch. The switch includes a well region of a first-conductivity-type formed on a semiconductor substrate, and serving as drains of the first switch and the second switch, a gate electrode of the first switch provided in a first trench formed in the well region through a first gate insulating film, a gate electrode of the second switch formed in a second trench formed in the well region so as to be spaced apart from the first trench with a second gate insulating film, a source region of the first switch formed on a side wall of the first trench, and on a surface of the well region via a first channel region of a second-conductivity-type, and a source region of the second switch formed on a side wall of the second trench, and on a surface of the well region via a second channel region of the second-conductivity-type. The well region is formed in a region between the first trench and the second trench.

Abstract: A semiconductor device, in which it is possible to maintain high reliability in that interfacial breakdown does not occur between a solder ball and a conductive film, is provided. The semiconductor device according to the present invention comprises an uppermost layer interconnection 101, an insulating film, which is provided above the uppermost layer interconnection 101, provided with a pad via 104 reaching the uppermost layer interconnection 101, and a conductive film, which is connected to the uppermost layer interconnection 101 in a bottom of the pad via 104, and formed across from the bottom of the pad via 104 to outside the pad via 104; wherein the conductive film and the solder ball 108 provided in contact with the insulating film, and an alloy layer 110 containing a metallic element contained in the solder ball 108 and a metallic element contained in the conductive film intervene, and the solder ball is formed so as to cover the alloy layer 110.

Abstract: In a protection circuit of an input/output terminal I/O, three types of PNP bipolar transistors are included. In a first PNP type bipolar transistor 10A, the emitter thereof is connected to the input/output terminal I/O, the base thereof is connected to a high-potential power supply terminal VDD, and the collector thereof is connected to a low-potential power supply terminal VSS. In a second PNP type bipolar transistor 10B, the emitter thereof is connected to the input/output terminal I/O, and the base and the collector thereof are connected to the high-potential power supply terminal VDD. In a third PNP type bipolar transistor 10C, the emitter thereof is connected to the low-potential power supply terminal VSS, and the base and the collector thereof are connected to the high-potential power supply terminal VDD.

Abstract: A method for manufacturing a semiconductor device includes: sequentially depositing a gate insulating film 104 composed of a high dielectric constant film containing one or more metallic element(s) selected from a group consisting of Hf, Zr, Al, La and Ta, a barrier film 106 composed of one or more metal nitride selected from a group consisting of TiN, TaN and WN, a metallic film 108 and a polycrystalline silicon film 110 on the semiconductor substrate (p-type semiconductor substrate 102a) to form a multiple-layered film; and silicidizing a lower portion of the polycrystalline silicon film 110 to form a lower layer (forming a first silicide layer 110a) by conducting a heat treatment of the multiple-layered film to diffuse the metal of the metallic film 108 into the polycrystalline silicon film 110.

Abstract: In a nonvolatile semiconductor memory device, a memory cell array has a plurality of nonvolatile memory cells arranged in a matrix. A selecting section selects as selection memory cells, at least two of the plurality of nonvolatile memory cells from the memory cell array. A write section applies to the selection memory cells, a gate voltage which increases step by step, until a threshold voltage of each of the selection memory cells reaches a target threshold voltage, such that the threshold voltage increases step-by-step.

Abstract: A semiconductor device includes a silicon substrate, a strain-inducing layer, a silicon layer, a FET, and an isolation region. On the silicon substrate, the strain-inducing layer is provided. On the strain-inducing layer, the silicon layer is provided. The strain-inducing layer induces lattice strain in a channel region of the FET in the silicon layer. The silicon layer includes the FET. The FET includes a source/drain region, an SD extension region, a gate electrode and a sidewall. The source/drain region and the strain-inducing layer are spaced from each other. Around the FET, the isolation region is provided. The isolation region penetrates the silicon layer so as to reach the strain-inducing layer.

Abstract: A thermal stress resistance evaluating method of a semiconductor device includes: forming a test circuit on a corner of each of unit regions arranged on a wafer in an array arrangement; forming a TEG chip by dicing a TEG chip region which is determined by grouping at least two of the unit regions in a predetermined shape; assembling a packaged TEG chip from the TEG chip; and executing a temperature cycling test on the packaged TEG chip by using the test circuit on the TEG chip. According to such a configuration, by adjusting the predetermined shape, the packaged TEG chip of various sizes can be formed in accordance with the design of the product chip size.

Abstract: A level conversion circuit includes an input section configured to receive a first signal of a first signal level and a correction signal and generates a second signal of a second signal level from the first signal and the correction signal. A level converting section converts the second signal into an output signal of a third signal level, and a duty correcting section generates the correction signal corresponding to a duty ratio of the output signal and outputs the correction signal to the input section.

Abstract: A DLL circuit includes a first delay line circuit, a first phase comparison circuit, a control circuit, and a first selecting circuit. The first delay line circuit can change a delay amount and provide a delay to a first clock signal. The first phase comparison circuit can detect a phase difference between the first clock signal and an output signal of the first delay line circuit, and a phase difference between a test clock signal of which frequency is lower than the first clock signal and an output signal of the first delay line circuit or a signal after dividing the output signal. The control circuit controls a delay amount of the first delay line circuit according to the detection result of the first phase comparison circuit.

Abstract: A voltage reference circuit is provided with: an operational amplifier circuit; first and second resistor elements; first and second diodes; and first and second transistors. The first resistor element and the first diode are connected in series between a first input terminal of the operational amplifier circuit and a reference level node. The second resistor element and the second diode are connected in series between a second input terminal of the operational amplifier circuit and the reference level node. The first transistor is connected between a power supply node and the first input terminal of the operational amplifier circuit and has a control electrode receiving an output of the operational amplifier circuit. The second transistor is connected between the power supply node and the second input terminal of the operational amplifier circuit and has a control electrode receiving the output of the operational amplifier circuit. The value of R12·ln(n11·n22)/(R12·n12·R11) is adjusted to approximately 23.

Abstract: In a data receiving apparatus, a measuring section measures a first pulse width of a first pulse, a second pulse width of a second pulse and a third pulse width of a third pulse, during each of which a first signal level of a reception signal is continuous. The first pulse, the second pulse, and the third pulse are sequentially and continuously received by putting a portion of a second signal level different from the first signal level between the first and second pulse and the second and third pulse. A first comparing section performs a first determination based on a measured value of the first pulse width and a measured value of the second pulse width, and the first determination is that the first pulse indicates a start of the reception signal and the second pulse indicates a synchronization signal.

Abstract: A data processing device according to the present invention comprises a nonvolatile memory and a trimming data read control circuit. The nonvolatile memory has a plurality of memory regions in which the same trimming data is stored. The trimming data read control circuit reads the trimming data from a random one of the plurality of memory regions.

Abstract: A decoding method performs turbo decoding on data that includes a first value before transmission and that includes a second value after received, the second value changed from the first value due to the influence of a transmission path. The decoding method includes performing the turbo decoding on the data to obtain a log-likelihood ratio for the second value, converting the second value to a third value that is obtained by correcting the second value to become closer to the first value when a decoded result from the turbo decoding on the data includes an error and when an absolute value of the log-likelihood ratio is equal to or greater than a predetermined threshold value; and performing the turbo decoding on the data including the third value to obtain a decoded result of the data.

Abstract: A communication apparatus which includes a clock generation circuit outputting a plurality of clocks, each of said plurality of clocks having a different phase from each other; a synchronization detection block receiving a sync word and a payload having a predetermined length after receiving said payload, sampling said sync word by using each of said plurality of clocks and to output a first signal indicating a clock or clocks capable of sampling said sync word successfully, said synchronization detection block being capable of sampling said payload by using a clock or clocks inputted thereinto; a clock phase selection block coupled to said synchronization detection block to-receive said first signal to select one of said plurality of clocks in accordance with said first signal and to output a second signal indicating a selected clock; and a clock gate unit coupled between said clock generation circuit and said synchronization detection block and coupled to said clock phase selection block to receive each of

Abstract: In order to solve a problem in a conventional semiconductor device that improvement of resistance to electrostatic discharge damage or improvement of an area efficiency is severely restricted, there is provided a semiconductor device including: a first protection diode (DP) having an anode which is connected to a signal wire connected to an I/O pad (PAD), and having a cathode which is connected to a power supply wire (VDD); a power clamp circuit (10) connected between the power supply wire (VDD) and a ground wire (GND); a slot in which a set of the I/O pad (PAD) and the first protection diode (DP) is formed; and a power clamp circuit formation region in which the power clamp circuit (10) is formed, in which the power clamp circuit formation region has a side adjacent to a plurality of the slots, and has a width (W2) larger than a width of the slot.