Abstract: A non-volatile semiconductor memory device having a memory cell in which operating potentials are few and the scale of the peripheral circuitry is reduced includes a select transistor having a source/drain on both sides of a channel of a semiconductor substrate and having a gate electrode disposed on the channel via a thick gate insulating film; an element isolation region formed on the semiconductor substrate in an area adjacent to the select transistor; an antifuse adjacent to the element isolation region, having a lower electrode formed on the semiconductor substrate and having an upper electrode disposed on the semiconductor substrate in an area between the element isolation region and lower electrode via a thin gate insulating film; and a connection contact electrically connecting the source and upper electrode and contacting the source and the upper electrode.

Abstract: A display apparatus includes a display panel; and a display panel driver configured to drive signal lines of the display panel. The display panel driver includes: a color reducing circuit configured to be possible to generate a first color reduction image data from a first input image data by executing an error diffusion process by using a first error value, and to generate a second color reduction image data from the first input image data by executing the error diffusion process by using a second error value which is different from the first error value; and a driving section configured to drive a first pixel positioned on a horizontal line of the display panel in response to the first color reduction image data, and drive a second pixel positioned on the horizontal line and adjacent to a the first pixel in a horizontal direction, in response to the second color reduction image data.

Abstract: Provided is a reticle used for forming a plurality of vias for connecting first wirings provided in a first wiring layer and second wirings provided in a second wiring layer formed above the first wiring layer. The first wirings and the second wirings are provided along one of a first direction and a second direction, and the first direction and the second direction perpendicularly cross each other. The reticle includes a plurality of via opening patterns for forming the plurality of vias. Each of the plurality of via opening patterns has a rectangular shape, and is arranged to cause each side of each of the via opening patterns to be diagonal with respect to the first direction and the second direction.

Abstract: A semiconductor chip is composed of first and second contact pads; a first latch circuit connected with the first contact pad; a second latch circuit connected with the second contact pads; an internal circuit electrically connected with the first and second latch circuits; and a control circuit controlling data transfer between the first and second latch circuits. The area of the first contact pad is larger than that of the second contact pad.

Abstract: A solid-state imaging device includes a semiconductor substrate, photodetector elements, and blocking layers. The solid-state imaging device receives light on the back surface, and photoelectrically converts light incident upon the back surface of the semiconductor substrate, thereby acquiring an image of an object to be imaged. The photodetector elements receive the signal charge generated through the photoelectric conversion. Between a region in the semiconductor substrate where the photodetector elements are provided and the back surface, the blocking layers are provided. The blocking layers suppress diffusion of the signal charge.

Abstract: A semiconductor chip 100 includes a semiconductor substrate (not shown), and a stacked film 150 formed over the semiconductor substrate, which includes carbon-containing insulating films such as a first interlayer insulating film 106, and carbon-free insulating films such as an underlying layer 102 and a top cover film 124. The end faces of the carbon-free insulating films herein are located on the outer side of the end faces of the carbon-containing insulating films. The carbon composition of the carbon-containing insulating films is lowered in the end portions thereof than in the inner portions. The film density of the carbon-containing insulating films is raised in the end portions thereof than in the inner portions.

Abstract: A load/store unit includes a Top register for storing a value retained before loading to a load destination register and a saved register capable of storing data retained to the Top register. When an unaligned instruction evaluation unit determines that a load instruction issued from a instruction decode unit is an unaligned instruction, data stored to the Top register are stored to the saved register in order to make the Top register available to subsequent load instructions issued from the instruction decode unit.

Abstract: A semiconductor device manufacturing apparatus which uses a thermal CVD reaction to deposit a film onto a substrate has a ring with an electrode terminal that makes contact with either the substrate or the deposited film thereon, a power supply that applies a current or a potential to this electrode terminal of the ring, and a piston cylinder mechanism for moving the ring up and down, so as to cause its electrode terminal to make and break contact with the substrate or deposited film thereon.

Abstract: In a semiconductor device, a gate silicon dioxide layer is formed within a trench of a semiconductor wafer. A first gate electrode is formed on a sidewall of the trench of the semiconductor wafer via the gate silicon dioxide layer. An insulating layer is formed on a bottom of the trench of the semiconductor wafer via the gate silicon dioxide layer and surrounded by the first gate electrode. The insulating layer excludes silicon dioxide and has different etching characteristics from those of silicon dioxide. A second gate electrode is buried in the trench of the semiconductor wafer, and is in contact with the first gate electrode and the insulating layer.

Abstract: A USB hub according to an embodiment of the invention includes: a USB upstream port unit for inputting/outputting data in accordance with a USB protocol; a wireless upstream port unit for inputting/outputting data in accordance with a predetermined wireless communication protocol; a USB downstream port unit including at least one input/output port for inputting/outputting data in accordance with the USB protocol; a port selector for selection between the USB upstream port unit and the wireless upstream port unit to be connected with the input/output port; and a communication protocol converting unit provided on a connection path between the wireless upstream port unit and the port selector and converting the USB protocol and the wireless communication protocol.

Abstract: A manufacturing method of a semiconductor device including a step of forming a via hole in an insulation layer including an organic low dielectric film, such as MSQ, SiC, and SiCN, and then embedding a wiring material in the via hole through a barrier metal. According to this method, a plasma treatment is performed after the via hole is formed and before the barrier metal is deposited, using a He/H2 gas capable of replacing groups (methyl groups) made of organic constituents and covering the surface of the exposed organic low dielectric film (MSQ) with hydrogen, or a He gas capable decomposing the groups (methyl groups) without removing organic low dielectric molecules. As a result, the surface of the low dielectric film (MSQ) is reformed to be hydrophilic and adhesion to the barrier metal is hence improved, thereby making it possible to prevent the occurrence of separation of the barrier metal and scratches.

Abstract: Bending generated in a side of a device mounting surface of an organic resin substrate after an assembly process for a semiconductor device is inhibited, thereby providing an improved production yield. A semiconductor device 100 is formed by solder-joining a semiconductor chip 105 onto a device mounting surface 111 of an interposer that is composed of an organic resin substrate 101. The interposer is an interposer, which is composed of an organic resin substrate 101, and on one surface of which a semiconductor chip 105 is to be mounted, and has a convex curvature in a side of a back surface 113 opposite to the device mounting surface 111, in a condition before an assembling process for the semiconductor device 100.

Abstract: A semiconductor inspection apparatus includes a force probe applying voltage to a semiconductor device, and a sense probe detecting voltage of the semiconductor device, in which the force probe is contacted with an electrode pad of the semiconductor device and the force probe and the sense probe are contacted with each other to measure electric characteristics of the semiconductor device, and the force probe and the sense probe are arranged substantially on the same line when seen from a vertical direction with respect to an electrode surface (principal surface) of the semiconductor device.

Abstract: A signal conversion circuit for converting an inputted differential signal into a single-ended signal comprises a differential amplifier circuit for amplifying the differential signal, and generating a first non-inverted signal and a first inverted signal being inverted the first non-inverted signal, a first inverter for generating a second non-inverted signal being inverted the first inverted signal and an interpolation unit for interpolating a phase difference between the first non-inverted signal and the second non-inverted signal.

Abstract: A power switch circuit includes an output transistor which is connected between a first power supply terminal and an output terminal, and drives a load, an abnormality detecting circuit which detects an abnormal state of the output transistor, a resistance element which generates a resistance component by a diffusion layer formed on a well region, and is provided between an input terminal and a control terminal of the output transistor, and a well potential switching circuit which switches a voltage to be supplied to the well region between a voltage of the output terminal and a voltage of a second power supply terminal based on a detection result by the abnormality detecting circuit.

Abstract: A method of manufacturing a semiconductor device, includes: forming a first and a second trench regions adjacent from each other in a first conductivity type semiconductor base; forming a second conductivity type semiconductor region in the semiconductor base between the first and second trench regions; forming a mask on the second conductivity type semiconductor region, the mask covering a central portion between the first and second trench regions; performing ion implantation of a first conductivity type impurity in the second conductivity type semiconductor region with the mask to form a first conductivity type first region and a first conductivity type second region separated from the first conductivity type first region; and performing heat treatment to diffuse the impurity in the first and second regions and to form a connection region between the first and second regions, connection region being shallower than the first and second regions after the heat treatment.

Abstract: A multichip package according to an embodiment of the invention comprises a first chip and a second chip. A first ground line formed in the first chip and the second ground line formed in the second chip are connected via ESD protection circuits. One of the protection circuits is formed in the first chip and the other is formed in the second chip, allowing effective ESD discharge according to CDM model.

Abstract: During testing frequency divider PS, test control voltage signal TC and RF test signal TS are supplied via balun Ti to input terminals IN1 and IN2. Test control voltage signal TC flows through resistors R1, R2 to turn on NPN transistor Q0. A current from current source I1 then ceases to be supplied through voltage-controlled oscillator V1 and buffer B10 to voltage-controlled oscillator V1 and buffer B10 to halt their operation. Output impedance of buffer B10 is increased. Since potential of input terminals is that of test control voltage signal TC, varactor diodes VD1, VD2 are forward-biased, increasing capacitance values of the varactor diodes further. RF test signal TS may be supplied to frequency divider PS, through varactor diodes VD1, VD2, without being affected by buffer B10 exhibiting high output impedance. Chip area of test circuit for PLL circuit is reduced.

Abstract: Disclosed is a logic circuit including first and second input terminals, supplied with respective logic signals, and first and second MOS transistors, having sources respectively connected to associated ones of the first and second input terminals and gates cross-connected to the second and first input terminals. The drains of the first and second MOS transistors are connected in common. The logic circuit also includes a MOS transistor, connected between a first power supply and a common node of the drains of the first and second MOS transistors and having a gate supplied with a reset signal so that the MOS transistor is turned on at the time of resetting. The logic circuit further includes an inverter having an input end connected to the common node.

Abstract: Disclosed is a device which includes an oscillation circuit for generating a reference clock signal CLK (osc), a display counter circuit for generating from the reference clock, a frame synchronization signal CLK (frm), a line selection reference clock signal CLK (drv), and a boost operation reference clock obtained on performing frequency multiplication of the line selection reference clock signal CLK (drv), a frequency divider circuit for inputting the frame synchronization signal CLK (frm) as a reset signal thereof and performing frequency division of the boost operation reference clock to output a boost operation clock signal CLK (dcdc), a boost circuit for performing charging and discharging operations according to the boost operation clock signal CLK (dcdc), and a driver circuit supplied with the boosted voltage of the boost circuit for driving a scan line selected the line selection reference clock signal CLK (drv).