Abstract: A semiconductor device containing a novel cyclosiloxane polymer showing electroconductivity or semiconductivity has a charge transport layer comprising a plasma polymer containing structural units (A) each having a transition metal as a central metal and structural units (B) each situated between structural units (A) adjacent to each other and having a cyclosiloxane skeleton. The charge transport layer is formed by plasma polymerization of an organic metal compound having the transition metal as the central metal and the cyclosiloxane compound in a reactor.

Abstract: In a transmission portion of a semiconductor device, a first amplification portion receives a digital baseband signal and amplifies the signal with a first gain through digital processing. A digital-to-analog conversion portion converts the digital baseband signal amplified by the first amplification portion into an analog baseband signal. A modulation portion generates a transmission signal by modulating a local oscillation signal with the analog baseband signal. A second amplification portion amplifies the transmission signal with a variable second gain. A control unit receives information representing a transmission mode and adjusts the first gain in accordance with the transmission mode.

Abstract: The present invention provides a semiconductor device having a nonvolatile memory function capable of shortening an erase time and executing data access efficiently. When, under the control of a command register/control circuit, an erase voltage is applied to an embedded erase gate wiring disposed in a memory cell boundary region, and an electrical charge is transferred between a floating gate and an embedded erase gate to thereby perform an erase operation, a read selection voltage is applied to a memory gate line and an assist gate line during the application of the erase voltage to thereby carry out the reading of data.

Abstract: A semiconductor device includes a substrate, a bonding pad provided above the substrate, a first signal transmitting/receiving portion provided above the substrate and below the bonding pad, and a transistor provided over the substrate. The transistor is connected to the first signal transmitting/receiving portion.

Abstract: A method of manufacturing a semiconductor device which solves a problem with a burn-in process where current and voltage are applied to finished semiconductor devices at high-temperature. The method uses an organic multilayer wiring substrate for a burn-in board in which power supply/grounding wiring is formed with microscopic openings formed at least almost all over the areas around sockets over the front or back surface of the substrate. For increasing the supply voltage and reference voltage for the burn-in board and other purposes, whenever possible, signal wires are disposed in inner wiring layers of the board. The related-art burn-in board which has a solid or blanket-type conductor pattern in an outermost layer as wiring for supply or reference voltage may cause an insulating protective film over the metal wiring to peel due to weak adhesion between the wiring and film when thermal cycles are repeated. The method solves the problem.

Abstract: The disclosed invention provides a semiconductor device that enables early discovery of a sign of aged deterioration that occurs locally. An LSI has a plurality of modules and a delay monitor cluster including a plurality of delay monitors. Each delay monitor includes a ring oscillator having a plurality of gate elements. Each delay monitor measures a delay time of the gate elements. A CPU #0 determines if a module proximate to a delay monitor suffers from aged deterioration, based on the delay time measured by the delay monitor.

Abstract: A bus connection circuit connects a bus master and a plurality of bus slaves. The bus connection circuit includes a mirror area access detecting circuit and a processing circuit. The mirror area access detecting circuit detects that the bus master accesses a mirror area of a first bus slave of the plurality of bus slaves, and output a detection signal based on a detection result. The processing circuit executes processing preset in correspondence to the detection result, to an area or data as an access object, based on the detection result.

Abstract: A screening device for semiconductor devices includes a data divider to generate measurement value subsets by sub-grouping a measurement value set including measurement results relating to characteristics of the semiconductor device based on a specific standard; a first evaluation value calculator to calculate a first evaluation value that is an evaluation standard for measurement results included in the plural respective measurement value subsets; a data converter to convert measurement results contained in the plural respective measurement value subsets based on the first evaluation value; a second evaluation value calculator to calculate a second evaluation value that is an evaluation standard for measurement results after conversion by the data converter; and a decision unit to decide if the semiconductor device under measurement is a pass or fail based on the second evaluation value.

Abstract: In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer (a second interconnect layer). The second interconnect layer is formed on the undersurface of the first interconnect layer. The second interconnect layer is larger in area seen from the top than the first interconnect layer and is extended to the outside from the first interconnect layer.

Abstract: A semiconductor device with a transistor region has a first conductor pattern formed within a multilayer interconnect structure positioned under a signal line and above the transistor region. The first conductor pattern is coupled to ground or a power supply and overlaps the transistor region. The signal line overlaps the first conductor pattern.

Abstract: The present invention provides a digitally controlled oscillator device capable of reducing noise away from an oscillation frequency, and a high frequency signal processing device. Fractional capacitances are realized using a plurality of unitary capacitor units, for example. In one unitary capacitor unit, one ends of two types of capacitive elements are respectively coupled to oscillation output nodes. On the other hand, in the unitary capacitor units other than the one unitary capacitor unit, one ends of two types of capacitive elements are respectively coupled to a fixed voltage. The other ends of one capacitive elements in all the unitary capacitor units are coupled in common, and the other ends of other capacitive elements are also coupled in common. Turning on and off of respective switches in all the unitary capacitor units are controlled in common.

Abstract: A semiconductor integrated circuit device comprises I/O cells arranged around a core region. Each of the I/O cells comprises a level shifter circuit, an I/O logic circuit, and an I/O buffer circuit. An I/O logic region in which the I/O logic circuit is arranged and an I/O buffer region in which the I/O buffer circuit is arranged overlap with a region in which a pad for the I/O cell is arranged. The I/O logic region and the I/O buffer region are arranged side by side in a direction parallel to a side of the core region.

Abstract: A memory controller that allows shared access to a memory device via a plurality of write ports and read ports. A write port includes a data buffer that allows data to be written to a first number of its storage locations at a pre-determined time. A write arbiter is able to read data from a second number of storage locations of a data buffer of a write port at a pre-determined time and write the read data to a memory device. A read port is configured to respond to requests to read data and includes a data buffer. A read arbiter is able to read, at a pre-determined time, data from the memory device on behalf of one of the read ports, and to write the read data into a second number of storage locations of the data buffer of the read port on whose behalf the data was read.

Abstract: A PWM output apparatus includes a calculating circuit configured to calculate an output width of a PWM output signal of a first signal and a second signal, which have phases different from each other, based on a command value of a PWM output. A comparing circuit compares the output width and a reference period which is set longer than a predetermined dead time period. A PWM output signal generating circuit outputs the PWM output signal to a dead time inserting block as a corrected PWM output signal, when a set/clear signal generating circuit outputs the set signal, and carries out a correction of setting the first signal of the PWM output signal to be inactive to output to the dead time inserting block as the corrected PWM output signal, when the set/clear circuit outputs the clear signal. The dead time inserting block corrects the corrected PWM output signal.

Abstract: To implement a filter circuit with low noise and a low cutoff frequency in a smaller area, a filter circuit has a first circuit which receives an input signal supplied to an input terminal, amplifies the signal, and outputs the amplified signal to an output terminal, a first differential amplification circuit for receiving the output signal of the first circuit through a first capacitance element, a first resistance element for forming a negative feedback path between the input and output of the first differential amplification circuit, and a second resistance element for forming a negative feedback path between the output of the first differential amplification circuit and the input of the first circuit.

Abstract: A semiconductor device includes a signal output unit, and a decision unit. The signal output unit includes m (?2) pieces of fuses, a NAND gate, resistance elements, and an output terminal. The decision unit decides whether n or more pieces (m?n?2) of fuses are disconnected out of the m pieces of fuses included in the signal output unit, and outputs the result of a decision. When m=n=2, the decision unit is constituted of a NOR gate having two input terminals connected to a respective end of the fuses. Thus, a H-level potential signal is output at an output terminal of the NOR gate when the decision result is affirmative. On the other hand, when the decision result is negative, a L-level potential signal is output at the output terminal.

Abstract: Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.

Abstract: A method, apparatus and computer program product are provided for causing a modification of a TTI E-DCH resource allocation in an instance in which a criterion for resource modification has been met. In this regard, a method is provided that includes determining whether a criteria for resource allocation modification has been satisfied. The method further includes causing a request for modification of a resource allocation to be transmitted in an instance in which the criterion for relocation allocation modification has been satisfied. The method also includes causing a modification to the resource allocation in an instance in which an indication of resource allocation modification is received.

Abstract: Provided is a logic circuit that can reduce the variation of a power supply voltage supplied thereto and a semiconductor integrated circuit including the logic circuit. The logic circuit includes a buffer unit, a voltage detection unit, and a switch unit. The buffer unit is connected between a first power supply or a voltage regulator and a second power supply to receive power supply, and outputs a signal having the same or inverted logic level as an input signal to an output terminal. The voltage detection unit detects a voltage at the output terminal and outputs a detection signal based on a detection result. The switch unit connects the buffer unit to the first power supply or the voltage regulator in accordance with the detection signal.

Abstract: A method, apparatus and computer program product are provided for communicating hidden common channel resources to a communication device(s). In this regard, a method is provided that includes sending a message, to a device of a cell, including data indicating items of system information relating to a number of communication channel resources of a first type of resource and receiving a response message from the device indicating that the device supports communication channel resources of a second type of resource. The method may further include determining a set of communication channel resources associated with the second type supportable by a network device to send the set of resources to the device in a reply message responsive to the indication that the device supports the communication channel resources of the second type. The method may also include receiving a selection, by the device, of a communication channel resource(s) of the set.