Abstract: A data communication device includes: an antenna resonance circuit; a detection circuit; an arithmetic processing device; and a first switch. The antenna resonance circuit receives a signal in the ASK (Amplitude Shift Keying) format. The detection circuit demodulates a digital baseband signal based on the reception signal. The arithmetic processing device detects an appearance time of an edge in the demodulated digital baseband signal based on a preamble part of the reception signal. The first switch short-circuits both end of the antenna resonance circuit at first timing in synchronization with the appearance time of the edge.

Abstract: A semiconductor device, includes a substrate, a multi-layer wiring layer formed on the substrate, and including a signal line and ground lines extending above the signal line, one of the ground lines extending toward a direction in a predetermined layer and another one of the ground lines extending from the one of the ground lines toward another direction in the predetermined layer, a first pad on the multi-layer wiring layer, a redistribution layer formed on the multi-layer wiring layer, including a second pad, a redistribution line coupling the first and second pads, and an insulation film covering the redistribution line, the redistribution line extending above the ground lines along the one of the ground lines and not extending along the another one of the ground lines. The insulation film includes a hole exposing the second pad above an end portion of the one of the ground lines.

Abstract: A method for manufacturing a semiconductor device that includes a plurality of gate patterns in parallel with each other within one circuit block provided over a semiconductor substrate includes preparing a first photomask, performing a first photolithography process upon a photoresist layer within a circuit block by using the first photomask, preparing a second photomask that includes a trim photomask having at least one trim opening corresponding to a dummy gate pattern to remove a portion of the photoresist layer corresponding to the dummy gate pattern, and performing a second photolithography process upon the photoresist layer by using the second photomask.

Abstract: The formation of a void is suppressed in the assembly of a semiconductor device. An MCU chip and an AFE chip are mounted over a die pad formed of a quadrangle having a pair of first sides and a pair of second sides. After wire bonding is carried out on the MCU chip and the AFE chip, resin is supplied from the side of one second side of the two second sides to the side of the other second side. The resin is thereby passed through the opening between a first pad group and a second pad group over the MCU chip to fill the area between the chips and thus the formation of a void is suppressed in the area between the chips.

Abstract: A wireless communication system includes: a filter; and a semiconductor chip including a signal processing integrated circuit having an amplifier, wherein a main surface of the semiconductor chip is provided with a plurality of electrode terminals along an edge portion thereof; wherein the amplifier has a transistor including a control electrode, a first electrode through which a signal is outputted, and a second electrode to which a voltage is applied; wherein the control electrode, the first electrode and the second electrode of the transistor are connected to the electrode terminals, respectively; and wherein none of wirings are arranged between the electrode terminals and placements of the control electrode, the first electrode and the second electrode, making space between the electrodes and the electrode terminals narrow.

Abstract: A semiconductor manufacturing method includes: forming a seed film including a first metal over a bottom surface and a side wall of an opening portion formed over interlayer insulating films and a field portion located over the interlayer insulating film except the opening portion, forming a resist over the seed film and filling the opening portion with the resist, removing part of the resist, exposing the seed film formed over the upper portion of the side walls of the opening portion and the field portion, forming a cover film including a second metal, whose resistivity is higher than that of the first metal, over the seed film located over the upper portion of the side wall of the opening portion and the field portion, exposing the seed film by removing the resist, and forming a plating film including the first metal over the exposed seed film.

Abstract: To suppress the reduction in reliability of a resin-sealed semiconductor device. A first cap (member) and a second cap (member) with a cavity (space formation portion) are superimposed and bonded together to form a sealed space. A semiconductor including a sensor chip (semiconductor chip) and wires inside the space is manufactured in the following way. In a sealing step of sealing a joint part between the caps, a sealing member is formed of resin such that an entirety of an upper surface of the second cap and an entirety of a lower surface of the first cap are respectively exposed. Thus, in the sealing step, the pressure acting in the direction of crushing the second cap can be decreased.

Abstract: In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).

Abstract: A method of manufacturing a semiconductor device, includes mounting a semiconductor chip on a wiring substrate such that one surface of the semiconductor chip is faced to one surface of the wiring substrate, and filling a first resin in a gap between the surface of the wiring substrate and the surface of the semiconductor chip such that part of the first resin protrudes from the gap. In the filling of the first resin, the first resin is injected into the gap by use of a first resin injection nozzle while the first resin injection nozzle is being moved along any one of sides of the semiconductor chip or along two sides of the semiconductor chip which are adjacent to each other.

Abstract: A semiconductor device including a pillar formed in a highly reliable manner and a method of manufacturing the semiconductor device are disclosed. The semiconductor device includes a semiconductor chip including an internal circuit area and an I/O area disposed outside the internal circuit area, a package substrate coupled in a flip-chip manner to the semiconductor chip, and an electrically conductive pillar disposed between the semiconductor chip and the package substrate such that the electrically conductive pillar is located over two or more wirings in an uppermost wiring layer of the semiconductor chip and such that the two or more wirings are coupled together via the electrically conductive pillar.

Abstract: A semiconductor device is provided, which includes a substrate, an insulator film formed over the substrate, and plural metal wirings with different widths containing copper as a main component and an impurity which is different from copper. The plural metal wirings includes a first metal wiring having a concentration profile where the concentration of the impurity metal increases from the center part of the stacking direction to the surface and the second metal wiring having a concentration profile where the concentration of the impurity metal decreases from the bottom surface of the stacking direction to the surface. Moreover, the width of the second metal wiring may be larger than the width of the first metal wiring.

Abstract: Noise reduction circuit includes first and second reset signal generation circuits generating first and second reset signals activated when a data input signal goes to a low level or a high level and are deactivated in synchronization with a clock signal when a high or low level is maintained, and first and second counter circuits that count an inverted signal of clock signal and are reset by the first or second reset signal. The noise reduction circuit further includes a data output circuit including a selector circuit and an output flip-flop circuit that outputs a signal selected by the selector circuit in synchronization with the clock. The selector circuit selects and outputs any of: signal fixed at a high level or low level, and output signal of the output flip-flop circuit, according to logic levels of output signals of the first and second counter circuit.

Abstract: An imaging apparatus including an imaging sensor, a control unit that instructs the imaging sensor to capture a first image with a first charge accumulation time and to capture a second image with a second charge accumulation time different from the first charge accumulation time, under a light source blinking at a first blink cycle, and a flicker detection unit that detects a flicker occurrence in the first or second image based on a difference in luminance between the first image and the second image. The imaging sensor captures the first image and the second image at a same shutter speed.

Abstract: A data processing device including a nonvolatile memory comprising a plurality of memory regions in which a same trimming data is stored, and a trimming data read control circuit configured to read the trimming data from a random memory region. The trimming data read control circuit comprises a region selection signal generation circuit configured to generate a region selection signal that specifies a random memory region among the memory regions, and a read circuit configured to read the trimming data from the random one memory region in response to the region selection signal. The region selection signal generation circuit comprises a clock counter configured to count a clock signal until a reset signal is input, and a signal generation circuit configured to generate the region selection signal based on a count value of the clock counter. The reset signal is input to the clock counter at a random timing.

Abstract: The asynchronous circuit includes a plurality of circuit blocks connected in a hierarchical structure, each circuit block including an arithmetic circuit and a control circuit that makes two-phase control on the arithmetic circuit, and a mode control circuit. The mode control circuit controls a circuit block in a first stage to start initialization when the circuit block starts idle phase and start working phase when a circuit block in a lowermost stage starts idle phase, and controls a circuit block in a second stage to start working phase when the circuit block in the first block starts initialization and start initialization when the circuit block in the first stage starts working phase. This improves the processing speed of a two-phase asynchronous circuit and suppresses an increase in circuit size.

Abstract: Current drive efficiency is deteriorated in the conventional FET. The FET 20 includes an electrode film 24a provided over the semiconductor substrate 10 and a stressor film 24b that is provided on the electrode film 24a and constitutes a gate electrode 24 together with the electrode film 24a. Each of the electrode film 24a and the stressor film 24b is composed of a metal, a metallic nitride or a metallic silicide. The stressor film 24b is capable of exhibiting a compressive stress over the semiconductor substrate 10.

Abstract: There is a need to provide a high-frequency power amplifier capable of reducing a talk current and reducing a phase deviation in output. The high-frequency power amplifier includes differently sized first through fifth power amplification transistors and impedance matching circuits for example. The high-frequency power amplifier changes a signal path to be used in accordance with a power specification signal. The high-frequency power amplifier uses a signal path from the first transistor to the second transistor in high power mode. The high-frequency power amplifier uses a signal path from the first transistor to the third transistor in medium power mode. The high-frequency power amplifier uses a signal path from the fourth transistor to the fifth transistor in low power mode. The high-frequency power amplifier is configured so that each of the signal paths includes the same number of stages of power amplification transistors and impedance matching circuits.

Abstract: A PLL circuit includes a polyphase reference clock output circuit that outputs reference clocks, a polyphase frequency divider circuit that outputs divided clocks, which is obtained by dividing frequencies of the reference clocks, a selection switch circuit that selects one of the reference clocks or one of the divided clocks, and outputs the selected clock as a selected clock, a digital VCO that uses the selected clock as an operating clock, and outputs delay amount data indicating a phase difference between an output clock and an ideal phase, where the output clock has a frequency that fluctuates according to a value of frequency control input data, and the ideal phase is calculated according to the output clock and the value of the frequency control input data, and a selection circuit that selects and outputs the output clock synchronized with the divided clocks according to the delay amount data.

Abstract: An optical coupling element includes a light emitting element and a light receiving element which receives emitted light from the light emitting element. The optical coupling element contains a silicone resin and includes a light transparent resin which covers the light emitting element and the light receiving element and transmits the signal light emitted from the light emitting element to the light receiving element (for example, a specific light transparent gel resin) and a light reflection resin which covers a circumference of the light transparent resin. To the light transparent resin, a dye which absorbs light having a shorter wavelength than a predetermined wavelength range including a light emitting wavelength of the light emitting element is added in a concentration of 0.7% by weight or less.

Abstract: A semiconductor integrated circuit includes: a plurality of the functional blocks; a plurality of configuration data memories in which a plurality of configuration data are stored; and a plurality of programmable switches configured to control connection between said plurality of functional blocks based on one of the plurality of configuration data which is stored in a common one of said plurality of configuration data memories.