Abstract: Provided is a method of manufacturing a semiconductor device, that buried gate electrodes are formed in a pair of trenches in a substrate, so as to be recessed from the level of the top end of the trenches, a base region is formed between a predetermined region located between the pair of trenches, and a source region is formed over the base region.

Abstract: There is provided an EUV exposure apparatus which restrains its optical systems or a mask used therein from being polluted by contaminations generated in its chamber. An energy beam generating source is arranged near a wafer stage set in the chamber of the EUV exposure apparatus to decompose an emission gas generated from a resist painted on the front surface of a wafer by an energy beam. In this manner, lightening mirrors configuring a lightening optical system as one of the optical systems, projection mirrors configuring a projection optical system as another of the optical systems, the mask, and others are protected from being polluted by contaminations.

Abstract: A voltage boosting/lowering circuit according to an aspect of the present invention includes an output voltage generation circuit 15 that includes a switch element 2 connected between an input terminal 1 and a choke coil 3 and a switch element 7 connected between the choke coil 3 and a ground, and generates an output voltage by switching the switch elements 2 and 7 between an on-state and an off-state and thereby boosting/lowering an input voltage input to the input terminal 1, a first switch control unit that outputs a first pulse signal to the switch element 2, a duty detection circuit 32 that detects a duty of the first pulse signal, and a second switch control unit that outputs a second pulse signal to the switch element 7 according to the detected duty.

Abstract: An error correction code decoding device comprises a first memory having a memory space like a matrix, a first decoding unit writing a first information into the first memory along a first direction, a second decoding unit reading the first information from the first memory along a second direction and a plurality of turbo decoders included in the second decoding unit, and differentiating access timing to a same row or same column with each other.

Abstract: A communication device includes a transmission signal processing unit, a driver amplifier coupled to the transmission signal processing unit, a selector coupled to the driver amplifier, a first attenuator coupled to the selector and an output portion of the communication device, a second attenuator coupled to the selector and the output portion of the communication device, and a controller coupled to the selector and the driver amplifier to switch between the first attenuator and the second attenuator based on a notification signal.

Abstract: A semiconductor chip includes a magnetic storage device and includes an electrode pad on a first face. The semiconductor chip is coated with a magnetic shield layer in a state in which at least the electrode pad is exposed. The semiconductor chip is mounted on an interconnect substrate through a bump. At least one of the semiconductor chip and the interconnect substrate includes a convex portion, and the bump is disposed over the convex portion.

Abstract: An integrated circuit is equipped with a reception mixer and a signal generator. A multistage delay circuit generates a plurality of clock pulses in response to a reception carrier signal. A phase detection unit detects differences between a voltage level of a specific clock pulse and voltage levels of a predetermined number of clock pulses generated prior to the specific clock pulse to thereby detect a predetermined phase of the specific clock pulse. A selector of a clock generation unit outputs a plurality of selection clock pulse signals respectively having a plurality of phases from the clock pulse signals. A first signal synthetic logic circuit performs logical operations on the selection clock pulses to thereby generate local signals supplied to the reception mixer.

Abstract: A method for manufacturing a semiconductor apparatus includes forming a semiconductor device on a principal surface of a substrate, in which the semiconductor device includes an interconnect layer, forming a buffer film which covers the semiconductor device and prevents diffusion of a magnetic material, and forming a magnetic shielding film which covers the buffer film and includes the magnetic material.

Abstract: A semiconductor device and a method for manufacturing the same of the present invention in which the semiconductor device is provided with a fuse structure or an electrode pad structure, suppress the copper blowing-out from a copper containing metal film. The semiconductor device comprises a silicon substrate, SiO2film provided on the silicon substrate, copper films embedded in the SiO2 film, TiN films covering an upper face of a boundary region between an upper face of copper films and the copper films, and the SiO2 film, and SiON films covering an upper face of the TiN films.

Abstract: The RF power amplifier circuit including multiple amplification stages has a previous-stage amplifier, a next-stage amplifier and a controller. The previous-stage amplifier responds to an RF transmission input signal. The next-stage amplifier responds to an amplification signal output by the previous-stage amplifier. In response to an output-power-control voltage, the controller controls the former- and next-stage amplifiers in quiescent current and gain. In response to the output-power-control voltage, the quiescent current and gain of the previous-stage amplifier are continuously changed according to a first continuous function, whereas those of the next-stage amplifier are continuously changed according to a second continuous function. The second continuous function is higher than the first continuous function by at least one in degree. The RF power amplifier circuit brings about the effect that the drop of the power added efficiency in low and middle power modes is relieved.

Abstract: A phase locked loop (PLL) which has a desired frequency characteristic even though a manufacturing process of a semiconductor integrated circuit has fluctuations. The semiconductor integrated circuit includes the PLL and a control unit. The PLL has a phase frequency detector, a loop filter, a voltage controlled oscillator (VCO) and a divider. The VCO comprises a voltage-current converter (VIC) and a ring oscillator. In response to a control voltage, the VIC generates a control current for setting each operating current of the ring oscillator. The control unit switches the PLL to a calibration operating period of its open loop and a normal operating period of its closed loop.

Abstract: After forming a ring-shaped trench penetrating through a semiconductor substrate from a rear surface side thereof and forming an insulating film inside the trench and on the rear surface of the semiconductor substrate, a through hole is formed in the insulating film and semiconductor substrate on an inner side of the ring-shaped trench from the rear surface side, thereby exposing a surface protection insulating film formed on a front surface of the semiconductor substrate at a bottom of the through hole. After removing the surface protection insulating film at the bottom of the through hole to form an opening to expose an element surface electrode, a contact electrode connected to the element surface electrode is formed on inner walls of the through hole and opening, and a pad electrode made of the same layer as the contact electrode is formed on the rear surface of the semiconductor substrate.

Abstract: A field-effect transistor (142) includes a lowly p-doped region 110 formed on a surface of a substrate (102), an n-doped drain region 112 and n-doped source region 114 arranged on a surface of the lowly p-doped region 110, and a device isolation insulating film 132 and device isolation insulating film 134. Here, the device isolation insulating film 132 is formed greater in film thickness than the device isolation insulating film 134; and in the n-doped source region 114, the peak concentration section having a highest dopant concentration is formed in a deeper position than in the n-doped drain region 112.

Abstract: In QFN packages for vehicles which are required to have high reliability, the side surface of leads is mostly covered with lead-to-lead resin protrusions, which prevent smooth formation of solder fillets during reflow mounting. When the lead-to-lead protrusions are mechanically removed using a punching die, there is a high possibility of causing cracks of the main body of the package or terminal deformation. When a spacing is provided between the punching die and the main body of the package in order to avoid such damages, a resin residue is produced to hinder complete removal of this lead-to-lead resin protrusion. The present invention provides a method for manufacturing semiconductor device of a QFN type package using multiple leadframes having a dam bar for tying external end portions of a plurality of leads.

Abstract: Provided is a semiconductor device for wireless communication which achieves a reduction in leakage power and allows an improvement in power efficiency. For example, to external terminals, an antenna driver section for driving an antenna and a rectifying section for rectifying input power from the antenna are coupled. The antenna driver section includes pull-up PMOS transistors and pull-down NMOS transistors. In the rectifying section, a power supply voltage generated by a full-wave rectifying circuit is boosted by a voltage boosting circuit. For example, when a supply of a power supply voltage from a battery is stopped, a power supply voltage resulting from the boosting by the voltage boosting circuit is supplied to the bulk of each of the pull-up PMOS transistors.

Abstract: A semiconductor device manufacturing method which prevents the resistance of a Ni silicide layer from increasing due to an additive element. First, a reaction control layer which contains a metallic element with an atomic number greater than Ni and does not contain Ni is formed over a silicon layer. Then, Ni is deposited over the reaction control layer and the silicon layer, reaction control layer and Ni are heat-treated to form a Ni silicide layer in the silicon layer. It is preferable that the reaction control layer be comprised of a metallic element with an atomic number greater than Ni.

Abstract: A semiconductor device 1 has a semiconductor chip 10. The semiconductor chip 10 is constituted as having a semiconductor substrate 12 and an interlayer insulating film 14 on the semiconductor substrate 12. The semiconductor substrate 12 has a plurality of through electrodes 22 (first through electrodes) and a plurality of through electrodes 24 (second through electrodes) formed therein. On the top surface S1 (first surface) of the semiconductor chip 10, there are provided connection terminals 32 (first connection terminals) and connection terminals 34 (second connection terminals). The connection terminals 32, 34 are connected to the through electrodes 22, 24, respectively. The connection terminals 32 herein are disposed at positions overlapping the through electrodes 22 in a plan view. On the other hand, the connection terminals 34 are disposed at positions not overlapping the through electrodes 24 in a plan view.

Abstract: A hybrid integrated circuit device having high mount reliability comprises a module substrate which is a ceramic wiring substrate, a plurality of electronic component parts laid out on the main surface of the module substrate, a plurality of electrode terminals laid out on the rear surface of the module substrate, and a cap which is fixed to the module substrate to cover the main surface of the module substrate. The electrode terminals include ones which are aligned along the edges of the module substrate and power voltage supply terminals which are located inner than these electrode terminals. The electrode terminals aligned along the substrate edges are coated, at least in their portions close to the substrate edge, with a protection film having a thickness of several tens micrometers or less. Connection reinforcing terminals consist of a plurality of divided terminals which are independent of each other, and are ground terminals.

Abstract: An automatic updating apparatus includes a traffic receiver that receives numbers per unit time of the access of more than one menu displayed in a screen and calculates rates of variability with respect to the numbers of the access to each menu, and a menu updating unit that updates a menu display in the screen based on the rates of variability.

Abstract: A semiconductor device adapted such that written information cannot be analyzed even by using a method of analyzing the presence or absence of electric charge, accumulated on a gate electrode, in which a substrate is a first conduction type, for example, p-type semiconductor substrate (for example, silicon substrate), an antifuse has a gate electrode and a second conduction type diffusion layer, the second conduction type diffusion layer is formed in the substrate and has, for example, an n-conduction type, a first contact is connected to the gate electrode, second contacts are formed in a layer identical with the first contact and connected to a region of the substrate in which the second conduction type diffusion layer is not formed, and the second contact is adjacent to the first contact.