Abstract: There is a need for providing a technology capable of decreasing on-resistance of a power transistor in a semiconductor device that integrates the power transistor and a control integrated circuit into a single semiconductor chip. There is another need for providing a technology capable of reducing a chip size of a semiconductor device. A semiconductor chip includes a power transistor formation region to form a power transistor, a logic circuit formation region to form a logic circuit, and an analog circuit formation region to form an analog circuit. A pad is formed in the power transistor formation region. The pad and a lead are connected through a clip whose cross section is larger than that of a wire. On the other hand, a bonding pad is connected through the wire 29.

Abstract: A semiconductor device having the structure, which is adopted for the highly precise visual inspection with a lower cost, is achieved. A semiconductor device is a semiconductor device having a region for forming an electric circuit, and includes seal rings provided in an interconnect layer and surrounding the region for forming an electric circuit, and a dummy metal via provided in the interconnect layer and located outside of the seal rings. In a cross section perpendicular to an elongating direction of the seal ring, the width of the dummy metal via is smaller than the width of the seal ring.

Abstract: A semiconductor device include an insulating interlayer formed over a substrate; an electrical fuse which is composed of a first wiring formed in the insulating interlayer, and has a cutting portion; and a second wiring and a third wiring, formed respectively on both sides of the cutting portion to extend along the cutting portion in the same layer as the first wiring. Air gaps formed to extend along the cutting portion are respectively provided between the cutting portion and the second wiring and between the cutting portion and the third wiring.

Abstract: A method for manufacturing a semiconductor device, including: partially removing a first layer formed on a wafer supported by a support member by supplying a first liquid at a temperature of 60 degrees C. or higher over the wafer (step S1); cooling the wafer after the partially removing the first layer (step S2); and removing the remaining portions of the first layer by supplying the first liquid at a temperature of 60 degrees C. or higher over the wafer after the cooling the wafer, the remaining portions of the first layer being remained after the partially removing the first layer (step S3).

Abstract: A simulation parameter extracting method of a MOS transistor according to an exemplary aspect of the present invention includes evaluating a measured value that includes a true gate-overlap capacitance by measuring a capacitance between the gate and the drain in each of a plurality of layout patterns at a predetermined bias voltage, only the number of contact plugs being different for each layout pattern, evaluating a gate-overlap capacitance calculation value of each layout pattern by subtracting a contact parasitic capacitance between the contact plug and the gate from the measured value, the contact parasitic capacitance being obtained by a simulation with varying a model parameter for evaluating a parasitic capacitance between the contact plug and the gate, and extracting the gate-overlap capacitance calculation value as the true gate-overlap capacitance at the model parameter when the gate-overlap capacitance calculation value is about constant regardless of the number of the contact plugs.

Abstract: A surface mount type semiconductor device is disclosed. The semiconductor device has testing lands on a lower surface of a wiring substrate with a semiconductor chip mounted thereon. Lower surface-side lands with solder balls coupled thereto respectively and testing lands with solder balls not coupled thereto are formed on a lower surface of a wiring substrate. To suppress the occurrence of contact imperfection between the testing lands and land contacting contact pins provided in a probe socket, the diameter of each testing land is set larger than the diameter of each lower surface-side land. Even when the wiring substrate is reduced in size, electrical characteristic tests using the testing lands can be done with high accuracy.

Abstract: The present invention provides ABS precision improving means under ADPLL environment or environment close to the ADPLL environment and realizes shortening of process time of the ABS. In a digital frequency comparator in an ABS circuit, a DFF for storing an initial phase difference in a DPE signal output from a DPFD is prepared. Immediately after start of ABS operation, a DPE signal output from the DPFD is recorded as a signal expressing an initial phase difference in an internal circuit of the DPFD into the DFF. After that, the digital frequency comparator performs ABS by using a signal obtained by subtracting the initial phase error recorded in the DFF from an input DPE signal, thereby realizing high-speed and stabilized ABS operation.

Abstract: A resistor string digital-to-analog converter includes a high-order resistor string, first high-order switches, a high-order decoder, a low-order decoder, and a conversion unit. The high-order resistor string includes a plurality of voltage acquisition points that are coupled through unit resistors. The high-order decoder generates a first high-order control signal in accordance with a high-order bit value, and operates in accordance with the first high-order control signal to bring into conduction a first high-order switch coupled to a pair of voltage acquisition points adjacent to each other through one or more voltage acquisition points. The low-order decoder generates a low-order control signal for controlling the conversion unit. The conversion unit divides a pair of high-order analog voltages output from a pair of voltage acquisition points.

Abstract: Described is a method for fabricating a semiconductor device having an FET of a trench-gate structure obtained by disposing a conductive layer, which will be a gate, in a trench extended in the main surface of a semiconductor substrate, wherein the upper surface of the trench-gate conductive layer is formed equal to or higher than the main surface of the semiconductor substrate. In addition, the conductive layer of the trench gate is formed to have a substantially flat or concave upper surface and the upper surface is formed equal to or higher than the main surface of the semiconductor substrate. Moreover, after etching of the semiconductor substrate to form the upper surface of the conductive layer of the trench gate equal to or higher than the main surface of the semiconductor substrate, a channel region and a source region are formed by ion implantation. The semiconductor device thus fabricated according to the present invention is free from occurrence of a source offset.

Abstract: In a semiconductor integrated circuit device, testing pads (209b) using a conductive layer, such as relocation wiring layers (205) are provided just above or in the neighborhood of terminals like bonding pads (202b) used only for probe inspection at which bump electrodes (208) are not provided. Similar testing pads may be provided even with respect to terminals like bonding pads provided with bump electrodes. A probe test is executed by using these testing pads or under the combined use of under bump metallurgies antecedent to the formation of the bump electrodes together with the testing pads. According to the above, bump electrodes for pads dedicated for probe testing may not be added owing to the use of the testing pads. Further, the use of testing pads provided in the neighborhood of the terminals like the bonding pads and smaller in size than the under bump metallurgies enables a probe test to be executed after a relocation wiring process.

Abstract: In a DDR memory controller, a clock control circuit is configured to output a clock signal selected from among a plurality of clock signals with different frequencies based on a frequency selection signal, to a DDR memory as an operation clock signal. A master DLL circuit is configured to receive one of the plurality of clock signals which has a maximum frequency as a reference clock signal to determine a delay code. A slave delay circuit is configured to delay a strobe signal from the DDR memory based on the determined delay code to generate an internal strobe signal for a data signal from the DDR memory.

Abstract: A manufacturing method for a semiconductor integrated device including forming a second impurity layer of a second conductivity type that is higher in impurity concentration than a second well of the second conductivity type on a first impurity layer of a first conductivity type that is higher in impurity concentration than a first well of the first conductivity type, forming the first well of the first conductivity type on the second impurity layer of the second conductivity type on the first impurity layer of the first conductivity type, the first well being supplied with potential from the first impurity layer of the first conductivity type, and forming the second well of the second conductivity type on the second impurity layer of the second conductivity type on the first impurity layer of the first conductivity type, the second well being supplied with potential from the second impurity layer of the second conductivity type.

Abstract: A semiconductor memory device pertaining to the present invention includes a plurality of memory macros having memory cells and memory peripheral circuits which drive the memory cells; first power supply switches which control power supply to the memory cells; and a second power supply switch which controls power supply to the memory peripheral circuits. The first power supply switches are located within the memory macros, respectively, and provided between a power supply line feeding power to the memory cells and the memory cells. The second power supply switch is located outside the memory macros and provided between the power supply line and a common power supply wiring for the memory peripheral circuits in the plurality of memory macros.

Abstract: A semiconductor integrated circuit device provided with a first circuit block BLK1, a second circuit block DRV1 and a conversion circuit MIO1 for connecting the first circuit block to the second circuit block. The first circuit block includes a first mode for applying a supply voltage and a second mode for shutting off the supply voltage. The conversion circuit is provided with a function for maintaining the potential of an input node of the second circuit block at an operation potential, thereby suppressing a penetrating current flow when the first circuit block is in the second mode. The conversion circuit (MIO1 to MIO4) are commonly used for connecting circuit blocks.

Abstract: A semiconductor device (1) includes a wiring (10) and dummy conductor patterns (20). The wiring (10) is a wiring through which a current with a frequency of 5 GHz or higher flows. Near the wiring (10), the dummy conductor patterns (20) are formed. A planar shape of each of the dummy conductor patterns (20) is equivalent to a shape with an internal angle larger than 180°.

Abstract: A wiring board has an insulating layer, a plurality of wiring layers formed in such a way as to be insulated from each other by the insulating layer, and a plurality of vias formed in the insulating layer to connect the wiring layers. Of the wiring layers, a surface wiring layer formed in one surface of the insulating layer include a first metal film exposed from the one surface and a second metal film embedded in the insulating layer and stacked on the first metal film. Edges of the first metal film project from edges of the second metal film in the direction in which the second metal film spreads. By designing the shape of the wiring layers embedded in the insulating layer in this manner, it is possible to obtain a highly reliable wiring board that can be effectively prevented from side etching in the manufacturing process and can adapt to miniaturization and highly dense packaging of wires.

Abstract: Semiconductor device manufacturing equipment in which in the process of dividing a substrate into individual semiconductor devices using a dicing blade, the possibility of an odd piece flying off a supporting member is prevented. A supporting member supports a substrate for semiconductor devices on one surface thereof. A dicing blade dices the substrate supported by the supporting member along dicing lines provided on the substrate to divide the substrate into a plurality of semiconductor devices. In a plan view, the edge of the supporting member's surface supporting the substrate overlaps a semiconductor device located at an outermost position of the substrate and lies inside a dicing line at an outermost position of the substrate.

Abstract: A semiconductor device includes a first semiconductor chip operating at a first power supply voltage and a second semiconductor chip operating at a second power supply voltage lower than the first power supply voltage to supply the second power supply voltage to the first semiconductor chip. The semiconductor chips according to the present invention are conveniently used for fabrication of the semiconductor device. The first semiconductor chip includes an output circuit including a first transistor and a second transistor, interconnected in series and turned on or off complementarily. The output circuit outputs a signal to a first external output terminal. The first semiconductor chip also includes a third transistor connected in series with the first and second transistors and having a gate electrode connected to a second output terminal.

Abstract: A drive circuit includes: first and second P-channel MOS transistors connected with a first voltage; a first N-channel MOS transistor connected between the first P-channel MOS transistor and a ground voltage, and having a gate connected with a first node and configured to receive a first input signal; and a second N-channel MOS transistor connected between the second P-channel MOS transistor and the ground voltage and having a gate connected with a second node and configured to receive a second input signal. An output P-channel MOS transistor is connected between the first voltage and an output node and has a gate connected with the second node, and an output N-channel MOS transistor is connected between the output node and the second voltage and has a gate supplied with an input signal having a same polarity as that of the first input signal. A P-channel MOS transistor has a source connected with the first node, a drain connected with the output node, and a gate connected with the second node.

Abstract: An object of the present invention is to provide a semiconductor device capable of recognizing circuit malfunction in an actual operation and of specifying a point of the circuit malfunction, and the semiconductor device, which does not induce the malfunction in the circuit of a subsequent stage when restoring the malfunction. The present invention is the semiconductor device provided with a plurality of logic circuits and a plurality of judging circuits for judging malfunction based on data from the logic circuits, wherein each of the judging circuits is provided with a first register, delay unit, a second register, a comparator and scanning unit, which makes the second register a shift register to allow to transmit an error signal held in the second register to the subsequent stage, while allowing the comparator to hold a comparison result.