Abstract: A voltage boosting/lowering circuit in accordance with present invention includes an output voltage generation circuit including a first switch element connected between an input terminal and one end of a choke coil and a second switch element connected between the other end of the choke coil and a ground terminal, the output voltage generation circuit being configured to boost or lower an input voltage input to the input terminal and thereby to generate an output voltage by switching the first and second switch elements between an On-state and an Off-state. Further, voltage boosting/lowering circuit includes a clock generation circuit that generates voltage-boosting and voltage-lowering clocks having different timings, and a switch control unit that performs switching control of the first and second switch elements based on the voltage-boosting and voltage-lowering clocks so that negative feedback control is performed so as to bring the output voltage to a target output voltage.

Abstract: Provided is that the method of manufacturing the semiconductor device including a first process of implanting a first impurity of a first conductivity type in a source and drain region having an elevated structure, with a concentration equal to or less than 1E14 atoms/cm2, on the conditions that the concentration peak thereof is located more deeply than the interface between silicide and a semiconductor substrate, a second process of implanting a second impurity of a first conductivity type having a smaller mass than that of the first impurity in the source and drain region on the conditions that the peak thereof is located more shallowly than the concentration peak of the first impurity, and a third process of applying high-temperature millisecond annealing to the semiconductor substrate after the first and second processes.

Abstract: Two data processing units having the same function, one of which is used for a master and the other for comparison, are provided, control of a circuit unit is performed by the master, the master data processing unit and the circuit unit are operated in synchronization with a first clock signal, the second data processing unit is operated in synchronization with a second clock signal having the same cycle and different phase from the first clock signal, and processing results of both the data processing units are compared in a comparison circuit. Flip flops are disposed on a signal path from the circuit unit to the comparison data processing unit and on a signal path from the master data processing unit to the comparator, and both the first and second clock signals are used for latch clocks of the flip flops in accordance with input signals thereof.

Abstract: The present invention realized miniaturization of a power supply device using a multiphase system. The power supply device includes, for example, a common control unit, a plurality of PWM-equipped drive units, and a plurality of inductors. The common control unit outputs clock signals respectively different in phase to the PWM-equipped drive units. The clock signals are controllable in voltage state individually respectively. For example, the clock signal can be brought to a high impedance state. In this case, the PWM-equipped drive unit detects this high impedance state and stops its own operation. It is thus possible to set the number of phases in multiphase arbitrarily without using another enable signal or the like.

Abstract: A write-back cache system includes: a dirty bit section configured to store a dirty indication data indicating that cache data is in a dirty state; and an OR calculation circuit connected with a front-stage to the dirty bit section. The OR calculation circuit includes: a first input node configured to receive a write request signal indicating a write request of a cache data; a second input node configured to receive a correctable error determination signal of the cache data indicating that a correctable error is present in the cache data; and an output node configured to output a signal such that the dirty indication data is stored in the dirty bit section, when receiving at least, one of the write request signal and the correctable error determination signal.

Abstract: Thresholds of MISFETS of a Full Depletion-type SOI substrate cannot be controlled by changing impurity density as with bulk silicon MISFETs. Therefore, it is difficult to set a suitable threshold for each circuit. According to the semiconductor device of the present invention, gate electrodes of P-channel type MISFETs composing a memory cell are made of N-type polysilicon, gate electrodes of N-channel type MISFETs are made of P-type polysilicon and gate electrodes of P-channel type and N-channel type MISFETs of peripheral circuits and a logic circuit are made of P-type silicon germanium. A suitable threshold can be achieved for each circuit using a SOI substrate, thereby making it possible to fully leverage the characteristics of the SOI substrate.

Abstract: A semiconductor device manufacturing method includes cutting a resin sealing body into a plurality of pieces, in which the resin sealing body includes a plurality of semiconductor chips mounted on a wiring board, a heat spreader disposed above the plurality of the semiconductor chips, and a sealing resin filled between the wiring board and the heat spreader. The cutting the resin sealing body includes shaving the resin sealing body from a side of the heat spreader, and shaving the resin sealing body from a side of the wiring board. The shaving the resin sealing body from the side of the heat spreader includes etching the heat spreader.

Abstract: The semiconductor device includes multilayer wirings of a dual damascene structure. The multilayer wirings include a first wiring layer formed on a semiconductor substrate and a second wiring layer formed on the first wiring layer. The first wiring layer includes a first insulation film, plural first vias provided in the first insulation film, a second insulation film provided on the first insulation film, and a first wiring provided on the first vias and connected to those first vias in the second insulation film. The second wiring layer includes a third insulation film, plural second vias provided in the third insulation film, an adhesive layer provided on the third insulation film, a fourth insulation film provided on the adhesive layer, and a second wiring provided on the second vias and connected to those second vias in the fourth insulation film.

Abstract: Provided is an electronic device of high reliability having an exposed functional portion. An electronic device 10 comprises an electronic element 11 having an exposed functional portion 11a on a first surface, a frame member 12 having a first penetration hole 12a, and a board 13 having a second penetration hole 13a. The frame member 12 is provided on the first surface of the electronic element 11 such that the first penetration hole 12a faces at least a part of the functional portion 11a. The electronic element 11 is mounted on the board 13 such that at least a part of the functional portion 11a faces the second penetration hole 13a. The frame member 12 does not contact with the board 13.

Abstract: A design method of a semiconductor device includes setting an inspection region of layout data generated based on circuit data, calculating an area ratio of a first area to a second area, the first area indicating an area of the inspection region, the second area indicating a sum of a surface area of a plane that a first member contacts with a second member, the second member contacting with the first member constituting a circuit element included in the inspection region, the second member further having different heat reflective properties from the first member, and arranging a dummy element in the layout data so that the area ratio is within a predetermined range in each inspection region of the layout data.

Abstract: A semiconductor device includes a silicon substrate, and a NiSi layer provided on the silicon substrate aiming to suppress oxidation of the surface of a NiSi layer and the resistivity increase. The NiSi layer includes a bottom NiSi region and a top NiSi region. The bottom NiSi region provided in contact with silicon surface, and containing substantially no nitrogen. The top NiSi region is a nitrided NiSi region provided in contact with the bottom NiSi region, and containing nitrogen. The NiSi layer has a total thickness of 50 nm or below.

Abstract: In a non-leaded type semiconductor device, a tab, tab suspension leads, and other leads are exposed to one surface of a seal member. A semiconductor element is positioned within the seal member and fixed to a surface of the tab with an adhesive. The tab is formed larger than the semiconductor element so that outer peripheral edges of the tab are positioned outside outer peripheral edges of the semiconductor element. A groove is formed in the tab surface portion positioned between the area to which the semiconductor element is fixed and wire connection areas to which the wires are connected, the groove being formed so as to surround the semiconductor element fixing area, thereby preventing peeling-off between the tab to which the semiconductor element is fixed and the resin which constitutes the package.

Abstract: A noise reduction circuit includes first and second reset signal generation circuits that generate first and second reset signals that are activated when a data input signal goes to a low level or a high level and are deactivated in synchronization with a clock signal when a high level or a low level is maintained, and first and second counter circuits that count an inverted signal of the clock signal, and are reset by the first or second reset signal. The noise reduction circuit further includes a data output circuit that includes a selector circuit and an output flip-flop circuit that outputs a signal selected by the selector circuit in synchronization with the clock, wherein the selector circuit selects and outputs any of: a signal fixed at a high level or a low level, and an output signal of the output flip-flop circuit, according to logic levels of output signals of the first and second counter circuit.

Abstract: An RF power amplifier has a final-stage amplifier stage which generates an RF transmit output signal, a signal detector which detects an RF transmit output level, a first detector, a second detector and a control circuit. The final-stage amplifier stage includes a transistor and a load element and performs saturation type nonlinear amplification and non-saturation type linear amplification. The first detector and the control circuit maintain the RF transmit output signal approximately constant with respect to a variation in load at an antenna at the saturation type nonlinear amplification. The second detector and the control circuit reduce an increase in the output voltage of the final stage transistor with respect to an overload state of the antenna at the non-saturation type linear amplification.

Abstract: Foreign matter formed over (or adhered to) a surface of a lead is reliably removed. A laser beam is applied to a residual resin (sealing body) which is formed in (or adhered to) a region surrounded by a sealing body (a first sealing body), a lead exposed (projected) from the sealing body, and a dam bar. The foreign matter formed over (or adhered to) the surface of the lead can be reliably removed by washing the surface of the lead after the removal of the residual resin. Thus, in a subsequent plating step, the reliability (wettability, adhesion with the lead) of a plating film to be formed over the surface of the lead can be improved.

Abstract: An imaging device includes an imaging element which obtains an image, and an imaging sensor processing unit which resets an exposure of the imaging element by a feedback control based on an image data obtained by the imaging element. The imaging sensor processing unit continuously executes, by pipeline processing, the following processing of setting an exposure time of the imaging element in a first frame just after start-up of the imaging device, making the imaging element accumulate light with an exposure time set at a former frame in a second frame, and outputting the image data by applying a gain set by the second frame in a third frame.

Abstract: A printed wiring board includes a built-in semiconductor element. A protective film is formed on a semiconductor element-mounted surface of a base substrate to which the built-in semiconductor element is connected to protect the semiconductor element-mounted surface excepting a mounting pad. Upper and side surfaces of the built-in semiconductor element are covered with a first insulating film formed by filling a sealing material. The first insulating film is covered with a second insulating film formed of an insulating resin melted from an insulating layer that is provided in side and upper portions of the built-in semiconductor element.

Abstract: An exemplary aspect of the present invention is a memory card that includes: a memory that stores data; a driver that modulates the data stored in the memory; a transmitter that transmits the data modulated by the driver to a receiver provided in an external main unit; and an IC chip having the driver and the transmitter formed therein.

Abstract: A semiconductor device includes a first interposer provided with a first chip first interconnection; a first chip arranged to contact the first interposer in one surface of the first chip; a second interposer arranged to contact the other surface of the first chip and provided with a first chip second interconnection; and a second chip group mounted on the second interposer. The first chip has a circuit forming surface on which a circuit element is formed, as one of the surfaces of the first chip, and the first chip first interconnection and the first chip second interconnection are electrically connected with the circuit element. A through electrode is formed to pass from the one of the surfaces of the first chip to the other surface, and one of the first chip first interconnection and the first chip second interconnection is electrically connected with the circuit element through the through electrode.

Abstract: In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film.