Abstract: A synthesis circuit synthesizes detection signals from a plurality of detection coils to generate a synthesized detection signal indicating a sine component of a rotation angle of a rotor. In this regard, the detection coils which are synthesis targets when the synthesis circuit generates the synthesized detection signal include a detection coil of a salient pole installed at a first electrical angle based on a first pole of the rotor and detection coils of salient poles installed at a second electrical angle different from the first electrical angle based on the first pole, and do not include detection coils installed at the first electrical angle based on a second pole.

Abstract: The present disclosure provides a technique for improving the reliability of a semiconductor device where spreading of cracking that occurs at the time of dicing to a seal ring can be restricted even in a semiconductor device with a low-k film used as an interlayer insulating film. Vias are formed in each layer on a dicing region side. The vias are formed at the same intervals in a matrix as viewed in a top view. Even in the case where cracking occurs at the time of dicing, the cracking can be prevented from spreading to a seal ring by the vias. As a result, resistance to moisture absorbed in a circuit formation region can be improved, and deterioration in reliability can be prevented.

Abstract: Example implementations include a method of requesting an instruction block associated with one or more instructions and located at one or more addresses of a system memory, obtaining the instruction block from the system memory, generating a hash of the instruction block, obtaining an expected hash associated with the instruction block, comparing the expected hash with the generated hash, in accordance with a determination that the expected hash matches the generated hash, generating a first validation response associated with the instruction block.

Abstract: A MONOS transistor as a first transistor can have improved reliability and a change in channel-width dependence of the property of a second transistor can be suppressed. The semiconductor device according to one embodiment includes a semiconductor substrate having first and second regions on the first main surface, an insulating film on the second region, a semiconductor layer on the insulating film, a memory transistor region in the first region, a first transistor region in the second main surface of the semiconductor layer, a first element isolation film surrounding the memory transistor region, and a second element isolation film surrounding the first transistor region. A first recess depth between the bottom of the first recess and the first main surface in the memory transistor region is larger than a second recess depth between the bottom of a second recess and the second main surface in the first transistor region.

Abstract: A semiconductor device includes a wiring substrate provided with a plurality of pads electrically connected to a semiconductor chip in a flip-chip interconnection. The wiring substrate includes a pad forming layer in which a signal pad configured to receive transmission of a first signal and a second pad configured to receive transmission of a second signal different from the first signal are formed and a first wiring layer located at a position closest to the pad forming layer. In the wiring layer, a via land overlapping with the signal pad, a wiring connected to the via land, and a wiring connected to the second pad and extending in an X direction are formed. In a Y direction intersecting the X direction, a width of the via land is larger than a width of the wiring. A wiring is adjacent to the via land and overlaps with the signal pad.

Abstract: The semiconductor device includes a wiring substrate, a first and second semiconductor chips, and the heat sink. The wiring substrate has a first surface. The first and second semiconductor chips are disposed on the first surface. The heat sink is disposed on the first surface so as to cover the first semiconductor chip. The heat sink has a second surface and the third surface opposite the first surface. The second surface faces the first surface. The heat sink has a first cut-out portion. The first cut-out portion is formed at a position overlapping with the second semiconductor chip in plan view, and penetrates the heat sink in a direction from the third surface toward the second surface. The second surface is joined to at least four corners of the first surface.

Abstract: An apparatus includes a first half-cell, a second half-cell, a multiplexer and a decision feedback equalizer. The first input stage may be configured to present a first differential input to the first auto-zero stage and the second auto-zero stage. The second input stage may be configured to present a second differential input to the third auto-zero stage and the fourth auto-zero stage. The multiplexer may be configured to receive a first output from the first auto-zero stage, receive a second output from the third auto-zero stage and present a decision feedback input comprising one of the first output and the second output. The decision feedback equalizer may be configured to generate a feedback signal in response to the decision feedback input and present the feedback signal to the first feedback buffer and the second feedback buffer.

Abstract: A semiconductor device is provided which can suppress heating while assigning performances to a plurality of modules whose heat generations are controlled while considering usage conditions of the plurality of modules. The semiconductor device includes a load detection unit that detects operation rates of the plurality of modules, a weighting calculation unit that calculates coefficients of the plurality of modules based on the operation rates of the plurality of modules, and a heat generation control unit that controls power consumptions of the plurality of modules based on the coefficients of the plurality of modules.

Abstract: Reliability of a semiconductor device is improved. The semiconductor device including a first MISFET group of a plurality of first MISFETs and a second MISFET group of a plurality of second MISFETs has a plurality of trenches each formed in a semiconductor layer and formed of an upper trench part and a lower trench part, and a plurality of gate electrodes formed inside the plurality of trenches. A thinner gate insulator is formed to the upper trench part and a thicker field insulator is formed to the lower trench part. In a trench at the outermost position in the first MISFET group and a trench at the outermost position in the second MISFET group, the gate insulator is not formed in the upper trench part, but the field insulator is formed in the upper trench part and the lower trench part.

Abstract: A current detection circuit, a semiconductor device and a semiconductor system which are capable of improving current detection accuracy are provided. According to one embodiment of the invention, a current detection circuit includes a resistive element to convert an input current supplied from outside into an input voltage, a constant-current source, a resistive element to convert an output current of the constant-current source into a reference voltage, and an AD converter to AD-convert the input voltage using the reference voltage.

Abstract: A semiconductor device includes an interrupt control circuit that receives a plurality of interrupt signals from the circuit blocks and outputs an interrupt request to the processor, and an interrupt monitoring circuit that corresponds to one of the interrupt signals and includes a setting circuit for setting a monitoring type and first and second monitoring periods. If the monitoring type indicates an asserted state of the interrupt signal, the interrupt monitoring circuit monitors the asserted state. If a first duration of the continuous asserted state exceeds the first monitoring period, the interrupt monitoring circuit detects the state as a failure. If the monitoring type indicates a negated state of the interrupt signal, the interrupt monitoring circuit monitors the negated state. If a second duration of the continuous negated state exceeds the second monitoring period, the interrupt monitoring circuit detects the state as a failure.

Abstract: Reliability of a semiconductor module is improved. In a resin mold step of assembly of a semiconductor module, an IGBT chip, a diode chip, a control chip, a part of each of chip mounting portions are resin molded so that a back surface of each of the chip mounting portions is exposed from a back surface of a sealing body. After the resin molding, an insulating layer is bonded to the back surface of the sealing body so as to cover each back surface (exposed portion) of the chip mounting portions, and then, a TIM layer is bonded to an insulating layer. Here, a region of the TIM layer in a plan view is included in a region of the insulating layer.

Abstract: The present embodiments relate generally to power controllers, and more particularly to synthetic current hysteretic control of a buck-boost DC-DC controller. In one or more embodiments, a controller includes PFM-PWM and Buck-Boost transitions with minimal circuitry and power consumption. In these and other embodiments, the controller includes a low-Iq synthetic ripple generator for use in implementing hysteretic control of a buck-boost controller.

Abstract: A semiconductor device includes a semiconductor substrate including a first epitaxial layer having a first surface and a second surface, a second epitaxial layer, a buried region formed across the first epitaxial layer and the second epitaxial layer, and a gate electrode. The second epitaxial layer includes a drain region, a source region, a body region, a drift region, a first region, and a second region. The first region is formed below at least the drain region. The second region has first and second ends in a channel length direction. The first end is located between the body region and the drain region in the channel length direction. The second region extends from the first end toward the second end such that the second end extends below at least the source region. An impurity concentration of the second region is greater than an impurity concentration of the first region.

Abstract: After the step of polishing, a part of each of each gate electrode is removed such that the upper surface of each gate electrode is located closer than the damaged region formed in the gate insulating film located between the gate electrodes to the main surface of the semiconductor substrate in cross-section view. Thus, it is possible to suppress the occurrence of a short-circuit defect during the operation of the semiconductor device.

Abstract: Example implementations include a method of obtaining an input voltage of a power converter circuit and a system voltage of the power converter circuit, obtaining a voltage rate gain based on an aggregate inductance of the power converter circuit, and in accordance with a determination that the input voltage and the system voltage are not equal, generating a rate offset voltage based on the voltage rate gain and the system voltage difference.

Abstract: There is to provide a power conversion device capable of estimating a junction temperature of a power transistor at a high accuracy. The control device includes a temperature estimation unit and controls the on and off of the power transistor through a driver. The voltage detection circuit detects the inter-terminal voltage of a source and drain terminals during the on-period of the power transistor. The temperature estimation unit previously holds the correlation information between the inter-terminal voltage and inter-terminal current of the source and drain terminals and the junction temperature, and estimates the junction temperature, based on the inter-terminal voltage detected by the voltage detection circuit, the known inter-terminal current, and the correlation information.

Abstract: To improve a reliability of a semiconductor device, a memory cell array is formed in a product region of an SOI substrate, and a test cell array is formed in a scribe region of the SOI substrate. A plurality of regions is formed in each of the memory cell array and the test cell array. The plurality of regions formed in the test cell array is the same configuration as the plurality of regions formed in the memory cell array. A plurality of plugs is formed in the plurality of regions, respectively. Also, it can determine whether or not a leak path is occurred in the memory cell array, by inspecting whether or not a conduction between the plurality of plugs is confirmed.

Abstract: After a die bonding step, a wire bonding step is performed to electrically connect the plurality of pad electrodes and the plurality of leads of the semiconductor chip via a plurality of copper wires. A plating layer is formed on a surface of the lead, and a copper wire is connected to the plating layer in the wire bonding step. The plating layer is a silver plating layer. After the die bonding step, an oxygen plasma treatment is performed on the lead frame and the semiconductor chip before the wire bonding step, and then the surface of the plating layer is reduced.

Abstract: The invention aims at downsizing a sensor node incorporating a biosensor to detect biological information and at improving the accuracy of detection made by the biosensor and ensures a quality of communication performed by the sensor node. In the sensor node, a sensor section with a pulse wave sensor formed therein and a main body section with a data processing unit and a wireless communication unit formed therein are separated. The sensor section includes an A/D converter unit that converts an analog signal corresponding to biological information detected by the pulse wave sensor to a digital signal. Digital signal transmission is performed from the A/D converter unit to the data processing unit. Moreover, in the sensor node, there is no conductive member that planarly overlaps with an antenna.