Abstract: A first semiconductor chip and a second semiconductor chip are stacked such that a first inductor and a second inductor face each other. An insulating sheet is disposed between the first semiconductor chip and the second semiconductor chip. The sealing member seals the first semiconductor chip, the second semiconductor chip, and the insulating sheet. The sealing member is disposed both between the insulating sheet and the first semiconductor chip and between the insulating sheet and the second semiconductor chip.

Abstract: An adaptive control system (2) for controlling a plant (3) is disclosed. The adaptive control system comprises a control system (5) configured to generate drive signals (16) for the plant in dependence upon a reference signal (8) and an error signal, and a state observer (17) or state sensor (17?; FIG. 2) configured to generate an estimate of a state of the plant in dependence upon the reference signal. The system comprises an error combiner (12) configured to selectably combine a first error (11) determined from the reference signal and a set of measurements of the plant and a second error (13) determined from the reference and the estimate.

Abstract: The reliability of semiconductor device is improved. The method of manufacturing a semiconductor device has a step of performing plasma treatment prior to the wire bonding step, and the surface roughness of the pads after the plasma treatment step is equal to or less than 3.3 nm.

Abstract: Disclosed herein is a method of generating an RTL description that implements any functional safety system. A high-level synthesis method for generating an RTL description in which a functional safety system is inserted by using an operation description defining a functional logic, a high-level synthesis script defining a high-level synthesis constraint, and a functional safety system implementation specification specifying a functional safety system to be inserted in a high-level synthesis process. The high-level synthesis method includes a control data flow graph generation step in which a high-level synthesis unit generates a control data flow graph using the operation description, and a first function safety system insertion processing step in which the high-level synthesis unit inserts the function safety system into the control data flow graph according to the function safety system implementation specification after the control data flow graph generation step.

Abstract: The temperature of inverters and power semiconductor devices is detected at high speed and with high accuracy. The electronic control circuit includes a vector instruction circuit for calculating an efficiency value of an inverter corresponding to a torque instruction value, and a temperature estimation circuit for estimating a temperature of the power semiconductor element based on the efficiency value of the inverter and a duty cycle for driving the power semiconductor element constituting the inverter.

Abstract: A signal processing device includes an oscillation circuit, a protection target circuit, a delay time detection circuit, and a clock control circuit. The oscillation circuit receives the frequency control signal and generates a clock signal having a frequency corresponding to the frequency control signal. According to the above-mentioned configuration, even when a delay failure due to aging occurs in the signal processing device, it is possible to prevent a malfunction.

Abstract: Reliability of a semiconductor device is improved. A resist pattern having an opening in a first region where a memory transistor is formed and covering other regions is prepared. Next, by ion implantation using this resist pattern as a mask, a channel region is formed in a surface of a semiconductor substrate in the first region, and a nitrogen-introduction portion is formed inside the channel region. Next, the resist pattern is removed. Then, a gate insulating film having a charge storage layer is formed on the semiconductor substrate in the first region, and a gate electrode is formed on the gate insulating film.

Abstract: An interference of control signals is caused by a deviation in the start timings of counting between counters of timer counter units of a first MCU and a second MCU. And thus, when a count value of the counter of the MCU of a parent reaches a predetermined value D, the MCU of the parent transmits a trigger signal to the MCU of a child. The MCU of the child obtains the time difference between the start timings of the counts of the counters of the parent and the child from the difference between the D and a count value E of the child at that time. A count period of the child until a maximum value of the count value is reached is adjusted by the time difference.

Abstract: According to certain general aspects, the present embodiments relate generally to securing communication between ECUs. In some embodiments, this can be done by utilizing the excess space in the CAN protocols. According to certain other aspects, security features such as sender authentication and message originality can be implemented at the protocol level, reducing the delays associated with implementing security features at higher levels in the communication stack. Additionally, the complexity of the security configuration is minimized by implementing the security features in hardware.

Abstract: A message handler is described. The message handler is configured, in response to receiving a data package which is formatted according to a given communications protocol, such as CAN or Ethernet, and which comprises package-directing data and payload data, to generate package having a predetermined data format, for example a layer-2 or layer-3 package, which comprises a header and payload data. The header comprises an address generated in dependence upon the package-directing data and wherein the payload comprises the data package. The package having a predetermined data format may be an IEEE 1722 frame.

Abstract: An ultrasonic receiver receives ultrasonic waves reflected at a plurality of portions of the body of a person to be measured, and thus the person to be measured needs to input the approximate height of himself/herself. An electrostatic capacitance sensor includes a transmission electrode and a reception electrode. The electrostatic capacitance sensor measures a mutual capacitance between the transmission electrode and the reception electrode by a mutual capacitance method. A variable frequency pulse generator generates a pulse supplied to the transmission electrode. A control apparatus allows the variable frequency pulse generator to sweep the frequency of the pulse and allows the electrostatic capacitance sensor to measure the mutual capacitance to identify a frequency at which the measured mutual capacitance is minimized. The control apparatus obtains the height of a person to be measured on the basis of the identified frequency.

Abstract: A semiconductor device includes a distortion correction unit that performs correct distortion processing on a captured image, a SRAM that stores image data after the distortion correction processing, a filter processing unit that receives the image data after the distortion correction processing from the SRAM and that performs smoothing filter processing on the image data after the distortion correction processing, after the image data after the distortion correction processing having a size required for the smoothing filter processing is stored in the SRAM, and an image reduction unit that performs reduction processing on image data after the smoothing filter processing.

Abstract: A cryptographic communication method using a dynamically-generated private key is provided. A signal generation unit outputs a second signal obtained by giving an error in a predetermined range to a signal obtained based on a first signal. An error correction generation unit outputs a third signal obtained based on the second signal and auxiliary information for correcting an error included in the second signal. A private-key generation unit generates a first private key based on the third signal. An encryption calculation unit outputs an encrypted signal obtained by encrypting a fourth signal based on the first private key.

Abstract: To improve the efficiency of pressure detection, a driver applies a positive-phase signal to a capacitance element from an opposite side to a coupling point in a control device. Another driver applies a reverse-phase signal to another capacitance element from an opposite side to the coupling point. A control unit detects pressures applied to the capacitance elements based on a potential fluctuation at the coupling point.

Abstract: It is to provide a semiconductor device, a semiconductor system, and a method of controlling the semiconductor device capable of reducing the power consumption. According to one embodiment, a semiconductor device includes a photo coupler control circuit that passes the current to a first signal path for a predetermined period when detecting a change of the input signal supplied from the outside, an insulating circuit that transmits a pulse signal indicating the change of the input signal, from the first signal path to a second signal path insulated from the first signal path, according to the current flow to the first signal path, a holding circuit that generates an input reproducing signal as a reproducing signal of the input signal from the pulse signal transmitted to the second signal path by the insulating circuit, and an internal circuit that receives the input reproducing signal generated by the holding circuit.

Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect temperature and a substantial linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.

Abstract: A semiconductor device for suppressing a variation in characteristics caused by a current flowing at the time of breakdown is disclosed. The first power MOS transistor Q 1 and the column CLM are formed in the first element region FCM defined in the epitaxial layer NEL, and the second power MOS transistor Q 2 is formed in the second element region RCM. The first power MOS transistor Q 1 includes a first trench gate electrode TGE1, and the second power MOS transistor Q 2 includes a second trench gate electrode TGE2. The depth GDP1 of the first trench gate electrode TGE1 is shallower than the depth GDP2 of the second trench gate electrode TGE2.

Abstract: The efficiency of signal transmission is improved. A communication apparatus includes a memory unit, a communication control unit, and an updating unit. A retransmission interval value is stored in the memory unit. The communication control unit transmits a first signal and receives a response signal corresponding to the first signal from a receiver. If the received response signal is a negative response signal, the first signal is retransmitted at a time interval longer than or equal to the retransmission interval value stored in the memory unit, from the transmission of the first signal. The updating unit updates the retransmission interval value stored in the memory unit, according to a time from the transmission of the first signal to the reception of the positive response signal corresponding to the first signal.

Abstract: In one or more embodiments, an efficient scheme is provided for sampling inductor currents in a digital multiphase PWM controller used for high-bandwidth voltage regulation. Some embodiments use the data from the PWM modulator along with weighted states based on the PWM waveform and past conversions in order to prioritize which current sense input should be sampled for each conversion. In these and other embodiments, a single ADC is used to sample inductor currents from two or more phases in a multiphase PWM controller, thereby providing power and area savings, for example.

Abstract: The present embodiments relate to an apparatus and method of integrating a semiconductor cell in a non-active area of a MOSFET on a semiconductor substrate. An active area of the MOSFET may include a regular MOSFET cell. The semiconductor cell which can have various structures is configured to function as trench MOS barrier Schottky (TMBS) diode. Depending on its structure the TMBS diode may be integrated in a termination region or a shield tie region or a gate finger neighboring region in the non-active area. The integrated TMBS diode as such can limit the body diode conduction and improve the conduction and switching efficiency in a circuit. Additionally, an integrated TMBS diode may improve the softness of reverse recovery of the MOSFET, reduce drain to source voltage overshoot and ringing due to softer recovery and/or shield bounce without wasting any active area of the semiconductor die of the MOSFET.