Abstract: A semiconductor integrated circuit includes a first conduction-type semiconductor region, a second conduction-type first impurity region, and a guard ring formed using a first conduction-type second impurity region so as to form a protection device of an electrostatic protection circuit. The first impurity region is formed inside the semiconductor region to have a rectangular planar structure with long and short sides. The guard ring is formed inside the semiconductor region to surround the periphery of the first impurity region. A weak spot is formed on the short side of the rectangular planar structure of the first impurity region. A plurality of electrical contacts are formed in a first portion of the guard ring which faces the long side of the rectangle. A plurality of electrical contracts are not formed in a second portion of the guard ring which faces the weak spot formed on the short side of the rectangle.

Abstract: A semiconductor device with an anti-fuse element includes a semiconductor substrate, a well region of a first conductivity type formed in the semiconductor substrate, and a gate electrode formed over the semiconductor substrate through a gate insulating film, and source regions of a second conductivity type opposite to the first conductivity type formed within the well region at the both ends of the gate electrode. When writing in the fuse element, a first writing potential is applied to the gate electrode, a first reference potential is applied to the well region, an intermediate potential is supplied to the source regions, and the intermediate potential is lower than the first writing potential and higher than the first reference potential.

Abstract: An object of the present invention is to reduce the manufacturing cost of a semiconductor device. A semiconductor device includes a SOI substrate that has an optical waveguide including a semiconductor layer. The optical waveguide is covered with an interlayer insulating film. Wiring parts are formed on the interlayer insulating film. Moreover, a thin film part having a smaller thickness than the wiring parts is formed above the optical waveguide and is integrated with the wiring parts.

Abstract: A wide charging area and communication area are ensured in a non-contact power supply system with wireless communication. The present invention includes a resonance coil, a wireless communication antenna coil, a power supply coil, and a sensitivity adjustment circuit coupled to the power supply coil. When electric power is supplied in a contactless manner, the power supply coil and the resonance coil are coupled electromagnetically and electric power supply from the resonance coil is performed by using a magnetic resonance method. When wireless communication is performed, the magnetic fluxes of the wireless communication antenna coil are coupled with those of the resonance coil and sensitivity is enhanced by the sensitivity adjustment circuit.

Abstract: The present invention is directed to determine validity of input data without increasing the number of data lines. An input/output system has an output device and an input device. The output device multiplexes data obtained by latching original data at a rising edge of a clock signal and data obtained by latching the original data at a falling edge of the clock signal and inverting the latched data, outputs the resultant data as multiplexed data, and also outputs the clock signal. The input device determines validity of the multiplexed data by comparing data obtained by latching the multiplexed data at a rising edge of the clock signal and data obtained by latching the multiplexed data at a falling edge of the clock signal and inverting the latched data.

Abstract: To provide new instruction and device suitable for tracing execution of a computer program. In an embodiment, a CPU is configured so as to supply a constant to a trace unit in response to decoding of a first instruction having an immediate field indicating the constant. In addition, the trace unit is configured so as to output trace data including the constant in response to execution of the first instruction in the CPU.

Abstract: It is possible to reduce power consumption of a pulsimeter while suppressing a degradation in an accuracy of measuring pulse. A pulsimeter (1) includes a light emitter (10), a photodetector (12), an AD converter (14), a frequency analyzing unit (15), and an adjusting unit (17). The light emitter (10) emits light to a blood vessel of a measurement target. The photodetector (12) detects light emitted by the light emitter (10) via the blood vessel. The AD converter (14) analog/digital converts an output signal of the photodetector (12). The frequency analyzing unit (15) frequency-analyzes data converted by the AD converter (14). The adjusting unit (17) adjusts an amount of light emitted by the light emitter (10) based on the analysis result by the frequency analyzing unit (15).

Abstract: In a manufacturing method of a semiconductor device, by arranging a lead in the vicinity of a gate portion serving as a resin injection port of a mold, a void is prevented from remaining within an encapsulation body when two semiconductor chips arranged so as to overlap in the Y direction are encapsulated with resin. Further, a length of an inner lead portion of the lead in the Y direction is greater than a length of an inner lead portion of another lead overlapping a chip mounting portion in the Y direction.

Abstract: To improve signal transmission characteristics of a high frequency signal of 80 GHz or higher. A semiconductor device includes a wiring board having a structure in which a signal via structure and a grounding via structure have mutually overlapping portions in plan view.

Abstract: There is a need to acquire more reliable profile information without relying on only the personal subjective judgment on the profile information. Profile information about a dweller is automatically extracted by evaluating and comprehensively determining each of feature amounts concerning the dweller from sensing data acquired from a sensor or a usage log concerning an equipment instrument in a living space based on a criterion for the feature amounts predetermined for a profile item. The reliability of the self-reported profile information is evaluated by comparing and verifying the automatically extracted profile information with the self-reported profile information supplied by the dweller.

Abstract: Characteristics of a semiconductor device are improved. A semiconductor device includes a sequential stack of a buffer layer, a channel layer, and a barrier layer, and includes a mesa part including a fourth nitride semiconductor layer formed over the stack, and a side part formed on both sides of the mesa part and including a thin film part of the fourth nitride semiconductor layer. Generation of 2DEG is suppressed below the mesa part while being unsuppressed below the side part. In this way, the side part that disables the 2DEG suppression effect is provided on an end portion of the mesa part, thereby a distance from an end portion of the side part to the gate electrode is increased, making it possible to suppress leakage caused by a current path passing through an undesired channel formed between a gate insulating film and the mesa part.

Abstract: This invention provides an electronic device with improved reliability. The electronic device has a wiring board with a back-surface ground pattern formed at the back surface of the board. The back-surface ground pattern is provided with a notch overlapping a region of an upper wiring layer at which a board member is exposed and which is encircled by a wide pattern, the notch permitting the release of water vapor from the region.

Abstract: A semiconductor device includes a wiring substrate including a first surface and a second surface opposite to the first surface, a semiconductor chip including a plurality of chip electrodes and mounted over the wiring substrate, a first capacitor arranged at a position overlapping with the semiconductor chip in plan view and incorporated in the wiring substrate, and a second capacitor arranged between the first capacitor and a peripheral portion of the wiring substrate in plan view. Also, the second capacitor is inserted in series connection into a signal transmission path through which an electric signal is input to or output from the semiconductor chip.

Abstract: According to one embodiment, a semiconductor device includes a shallow P-well, a shallow N-well, a shallow P-well, and a shallow N-well formed in regions different from one another, a deep N-well formed in a part deeper than the shallow P-well and the shallow N-well, and a base material, and further includes a first transistor formed in a part of the shallow P-well and the shallow N-well on the side of the principal surface, and a second transistor formed in a part of the shallow P-well and the shallow N-well on the side of the principal surface, in which the shallow N-well is formed in such a way as to surround the peripheral edge of the region of the shallow P-well.

Abstract: A high-electron-mobility transistor has a buffer layer, a channel layer, a barrier layer, a mesa-shaped cap layer, a source electrode formed on one side of the cap layer, a drain electrode formed on the other side, and a gate electrode formed over the cap layer via a gate insulating film. The semiconductor device has an element isolation region defining an active region in which the semiconductor device is provided. The gate electrode extends from over the active region to the over the element isolation region. In plan view, the active region has a projection part projected to the direction of the element isolation region in a region overlapped with the gate electrode. By providing the active region with a projection part, the channel length of a parasitic transistor can be increased, and turn-on of the parasitic transistor can be suppressed.

Abstract: A processor system includes a master processor that successively processes a plurality of tasks, a checker processor that successively processes at least one of the plurality of tasks, and a control circuit that performs control so that the checker processor operates when the master processor and the checker processor perform a lock-step operation, and the checker processor stops its operation when the master processor and the checker processor do not perform the lock-step operation, the lock-step operation being an operation in which each of the master and checker processors processes the same task, in which the control circuit performs control so that a period from when a task is processed by the lock-step operation to when another task is processed in the next lock-step operation is equal to or shorter than a maximum test period, the maximum test period being a test period acceptable to the processor system.

Abstract: A memory cell of a split gate type MONOS memory is formed over a plate-shaped fin being a part of a semiconductor substrate. In a data erase operation, in a selected memory cell on which erasing is performed, a drain region is applied with 0 V, a memory gate electrode is applied with a positive voltage, and accordingly, erasing is performed by the FN mechanism. Also, in the data erase operation, in an unselected memory cell on which the erasing is not performed, connected to the same memory gate line as the above-described selected memory cell, the drain region is in an open state, and the memory gate electrode is applied with the positive voltage, whereby an induced voltage region is generated in a channel region. Thus, a potential difference between the channel region and the memory gate electrode is small, and accordingly, the erasing is not performed.

Abstract: A semiconductor memory array includes a first nonvolatile memory cell having a first charge storage layer and a first gate electrode and a second nonvolatile memory cell, adjacent to the first memory cell in a first direction, having a second charge storage layer and a second gate electrode. The first and second electrodes extend in a second direction perpendicular to the first direction, the first electrode has a first contact section extending toward the second electrode in the first direction, and the second electrode has a second contact section extending toward the first electrode in the first direction. The first and second contact positions are shifted in the second direction, respectively, and the first electrode and the first contact section are electrically separated from the second electrode and the second contact section.

Abstract: In order to provide a semiconductor device capable of detecting HCI degradation of a semiconductor element in a simple structure, the semiconductor device includes an oscillation circuit including a plurality of logic gates of various driving forces which are formed by transistors and coupled in series, a frequency counter that measures an oscillation frequency of the oscillation circuit, and a comparator that compares the oscillation frequency of the oscillation circuit measured by the frequency counter with a predetermined value.

Abstract: A plurality of unit MISFET elements connected in parallel with each other to make up a power MISFET are formed in an LDMOSFET forming region on a main surface of a semiconductor substrate. A control circuit that controls a gate voltage of the power MISFET is formed in a driver circuit region on the main surface of the semiconductor substrate. A wiring structure having a plurality of wiring layers made of the same metal material is formed on the semiconductor substrate. The gate electrodes of the plurality of unit MISFET elements formed in the LDMOSFET forming region are electrically connected to each other via gate wirings formed in all of the plurality of wiring layers made of the same metal material.