Abstract: There is a need to improve estimation accuracy of a failure estimation method or its failure estimation apparatus that performs failure estimation on a targeted instrument based on history information about several instruments mounted with the same type of semiconductor device as an instrument targeted at failure estimation. A failure estimation apparatus that includes a history information database storing history information about a plurality of instruments mounted with the same type of semiconductor device and performs failure estimation on a targeted instrument mounted with a semiconductor device whose type equals the type, wherein the history information contains operation information and failure information; wherein the operation information indicates a chronological operating state of the semiconductor device mounted on the instruments; wherein the failure information indicates a failure cause of a failed instrument; and wherein the operating state is categorized into a plurality of classifications.

Abstract: The present invention provides a signal processor that improves a resolution of a phase detection without increasing a clock frequency of a controller or decreasing a frequency of an excitation signal. A signal processor 10 includes a comparator 11 that compares a signal obtained by phase modulating a carrier frequency at a rotor rotation angle of a resolver with a dither signal.

Abstract: The consumption current of a TCAM device is reduced. A semiconductor device includes multiple sub-arrays each including a TCAM cell array. Each sub-array searches the corresponding part of the input search data. Each sub-array outputs the search result indicative of a match for every entry without searching, when the corresponding first control signal is activated.

Abstract: A technique for reducing power consumption of a content addressable memory (CAM) system is provided. In a CAM system, an equalizer circuit is coupled to a border portion between a plurality of match line parts generated by dividing each match line corresponding to a piece of entry data, and a precharge circuit precharges each of the match line parts collectively corresponding to a piece of entry data to voltage VDD or VSS. When comparing the entry data and search data, the equalizer circuit couples, in accordance with a control signal, the match line parts after the match line parts are precharged by the precharge circuit. In an equalization period, search operation through the search line is started. A search transistor for comparing search data and entry data includes an NMOS search transistor.

Abstract: Included are an encoding section, a decoding section, and an image recognition section. The encoding section performs an encoding process for a video signal to be input based on a calculated encoding mode, and transmits an encoded stream. The decoding section performs a decoding process for the received encoded stream, and outputs a decoded image. The image recognition section performs an image recognition process for the decoded image. The encoding section adjusts the encoding mode based on recognition accuracy information representing the certainty of a recognition result in the image recognition section.

Abstract: Power supply of ECUs connected to a communication network is optimally controlled so that power consumption is reduced. A transceiver/receiver converts a message of a differential signal received via a CAN bus into a digital signal. A select circuit determines whether the converted message is in a CAN format or a UART format. If it is in the UART format, the select circuit outputs a message to the UART circuit. A UART circuit determines whether the message matches a UART format. If matched, an ID determination circuit determines whether the input message is specifying a CAN ID of its own ECU. If it is the CAN ID of the ECU, the ID determination circuit outputs an enable signal to turn on a regulator and supply power to an MCU and an actuator.

Abstract: It is to provide a technique capable of controlling the throughput and the power consumption of a semiconductor device at a desired ratio. A semiconductor device includes a clock generation circuit that generates a clock signal and a data processing unit that receives the clock signal. The clock generation circuit includes an oscillator that generates a source clock signal, an output circuit that outputs a clock signal with the source clock signal enabled, and a control circuit having a setting circuit in which the data processing unit sets the ratio of the enable. The semiconductor device can change the frequency of the clock signal by partially permitting or prohibiting the source clock signal in time.

Abstract: An electronic device is downsized while suppressing performance degradation of the electronic device. In the electronic device, a power module including a power transistor is arranged in a first region on a back surface of a through hole board having a plurality of through hole vias having different sizes while a pre-driver including a control circuit is arranged in a second region on a front surface of the board. In this case, in a plan view, the first region and the second region have an overlapping region. The power module and the pre-driver are electrically connected to each other via a through hole via. The plurality of through hole vias include a through hole via having a first size, a through hole via which is larger than the first size and in which a cable can be inserted, and a through hole via in which a conductive member is embedded.

Abstract: Provided is a signal processing circuit occupying a small circuit area. A common arithmetic operation element is shared between a plurality of arithmetic operation sequence control units. An arbitration circuit selects, when the plurality of arithmetic operation sequence control units simultaneously generate requests for arithmetic operations to use the common arithmetic operation element, the predetermined sequence control unit based on priority information about the plurality of arithmetic operation sequence control units, causes the common arithmetic operation element to execute the arithmetic operation requested from the selected arithmetic operation sequence control unit, and returns the result of the arithmetic operation to the selected arithmetic operation sequence control unit.

Abstract: A semiconductor device that can hold ESD immunity with a simple configuration is provided. The semiconductor device includes a power supply wiring, a ground wiring, an input circuit coupled between the power supply wiring and the ground wiring, an input pad which is coupled with the input circuit and to which a negative voltage lower than a voltage supplied to the ground wiring can be inputted, a plurality of first diodes provided between the ground wiring and the input pad, and a second diode provided between the input pad and the power supply wiring. A reverse bias breakdown voltage of the second diode is greater than a reverse bias breakdown voltage of each of the first diodes.

Abstract: There is to provide a semiconductor device capable of predicting a wear-out failure based on the degradation stress cumulative amount of power supply voltage and environmental temperature imposed on the device, which includes a ring oscillator having a plurality of stages of inverters, and a control circuit that emphasizes the voltage dependency and temperature dependency of an oscillation frequency of the ring oscillator or a control circuit that emphasizes the temperature dependency not the voltage dependency.

Abstract: An improvement is achieved in the heat dissipation property of an electronic device including power transistors. A semiconductor module includes first and second packages included in an inverter circuit. In the first package, a semiconductor chip having a high-side power transistor is embedded. In the second package, a semiconductor chip having a low-side power transistor is embedded. At the both wide surfaces of the first and second packages, first metal electrodes electrically coupled to respective collector electrodes of the power transistors and second metal electrodes electrically coupled to respective emitter electrodes of the power transistors are exposed. To the first and second metal electrodes of the first and second packages, four respective bus bar plates having areas larger than those of the first and second metal electrodes are joined.

Abstract: A semiconductor device, includes: a semiconductor substrate having a first well region; an insulating layer formed on a first portion of the semiconductor substrate, and contacted with the first well region; a semiconductor layer formed on the insulating layer; an element isolation region reaching to an inside of the first well region, in cross-section view; a first gate electrode layer formed on a first portion of the semiconductor layer via a first gate insulating film; a second gate electrode layer formed on a second portion of the semiconductor layer via a second gate insulating film, and formed on a first portion of the element isolation region; an interlayer insulating film covering the first gate electrode layer, the second gate electrode layer and a second portion of the element isolation region; and a first plug conductor layer formed in the interlayer insulating film.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate, a trench electrode provided in a trench, a trench insulating film provided between the trench electrode and the semiconductor substrate, a MOS electrode provided near the trench electrode, and a MOS insulating film provided between the MOS electrode and the semiconductor substrate, in which the semiconductor substrate includes a first semiconductor layer, a second semiconductor layer provided over the first semiconductor layer, a third semiconductor layer provided over the second semiconductor layer, a fourth semiconductor layer provided below the MOS electrode, and one and the other of fifth semiconductor layers provided on both sides of the fourth semiconductor layer, and in which the semiconductor device further includes a wiring layer that couples the one of the fifth semiconductor layers and the second semiconductor layer together.

Abstract: The present invention provides a semiconductor memory device that can perform failure detection of an address decoder by a simple method with a low area overhead. The semiconductor memory device includes: a first memory array having a plurality of first memory cells arrange in matrix; a plurality of word lines provided corresponding to each of the memory cell rows; an address decoder for selecting a word line from the word lines based on the input address information; a second memory array that is provided adjacent to the first memory array in the column direction, having a plurality of second memory cells able to read address information used in the selection of the previously stored word line, according to the selection of the word line extended to the second memory array; and a comparison circuit for comparing the input address information with the address information read from the second memory array.

Abstract: A semiconductor integrated circuit includes a low-noise amplifier circuit, a transformer, and an ESD protection circuit. The low-noise amplifier circuit amplifies a radio signal that is supplied to an input terminal. The transformer includes a first winding and a second winding and functions as an input impedance matching circuit for the low-noise amplifier circuit, in which at least one end of the second winding is connected to the input terminal of the low-noise amplifier circuit. The ESD protection circuit is connected to a center tap of the first winding.

Abstract: A semiconductor device includes an RF circuit and a microcontroller. The RF circuit has: a transmission unit generating a transmission signal; a reception unit generating a first generation signal and a second generation signal; and a transmission/reception loop-back switching unit switching between a first coupling state of coupling an output terminal of the transmission unit to a transmission antenna and coupling an input terminal of the reception unit to a reception antenna and a second coupling state of coupling an output terminal of the transmission unit to the input terminal of the reception unit. The microcontroller switches the transmission/reception loop-back switching unit to the second coupling state and executes a test of the RF circuit on the basis of the second generation signal when the transmission/reception loop-back switching unit is in the second coupling state and an output signal of a first sensor circuit.

Abstract: The disclosed invention can provide a semiconductor device, a lifetime prediction system, and a lifetime prediction method enabling it to notify a user that a semiconductor device is likely to become faulty, before the semiconductor device becomes faulty. A semiconductor device includes functional units and a lifetime prediction circuit. The lifetime prediction circuit acquires a deterioration degree indicating a degree of how each functional unit deteriorates, using a signal that is output from each functional unit. The lifetime prediction circuit executes processing to make a notification that the semiconductor device is close to its lifetime, if the deterioration degree is more than a first threshold.

Abstract: In a split-gate-type MONOS memory, increase in a defective rate due to variation in a gate length of a memory gate electrode is prevented, and reliability of a semiconductor device is improved. A first dry etching having a high anisotropic property but a low selection ratio relative to silicon oxide is performed to a silicon film, and then, a second dry etching having a low anisotropic property but a high selection ratio relative to silicon oxide is performed thereto, so that a control gate electrode composed of the silicon film is formed, and then, a sidewall-shaped memory gate electrode is formed on a side surface of the control gate electrode.

Abstract: An object of the present invention is to reduce burden on a program for changing an operation mode of an internal circuit in accordance with an internal clock frequency without mounting a large-scale circuit in an LSI in which setting of the frequency of an internal clock can be dynamically changed. In an LSI including an internal clock generation circuit generating an internal clock from a clock source in accordance with a parameter supplied, a register storing frequency information of the clock source, a register storing the parameter, and an internal circuit having a plurality of operation modes, a table circuit controlling the operation mode of the internal circuit in association with the frequency information and the parameter supplied from the registers is provided.