Abstract: To solve the problem of multi-pulse control in which the load of the control software is increased and further switching/timing adjustment is required, a semiconductor device includes a control unit including a CPU and a memory, a PWM output circuit for controlling the driver IC to drive the power semiconductor device, a current detection circuit for detecting the motor current, and an angle detection circuit for detecting the angle of the motor. The PWM output circuit includes a square wave generator circuit to generate a square wave based on the angle of the angle detection circuit as well as the base square wave information.

Abstract: The present invention provides a semiconductor device and a failure detection method capable of detecting an excessive variation among elements that constitute an analog circuit as a failure. According to an embodiment, a semiconductor device 1 includes: an AD converter 11; a digital assist circuit 12 that corrects an error of a digital signal Do corresponding to an analog signal Ain processed by the AD converter 11; and a failure detection circuit 13 that detects whether the AD converter 11 has a failure based on a correction amount by the digital assist circuit. The semiconductor device 1 is therefore able to detect the excessive variation among the elements that constitute the AD converter 11 as a failure.

Abstract: To provide a semiconductor device which can be stably operated while achieving a reduction of the power consumption. A semiconductor device includes a CPU, a system controller which designates an operation speed of the CPU, P-type SOTB transistors, and N-type SOTB transistors. The semiconductor device is provided with an SRAM which is connected to the CPU, and a substrate bias circuit which is connected to the system controller and is capable of supplying substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors. Here, when the system controller designates a low speed mode to operate the CPU at a low speed, the substrate bias circuit supplies the substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors.

Abstract: The reliability and performances of a semiconductor device having a nonvolatile memory are improved. A control gate electrode is formed over a semiconductor substrate via a first insulation film. A memory gate electrode is formed over the semiconductor substrate via a second insulation film having a charge accumulation part. The second insulation film is formed across between the semiconductor substrate and the memory gate electrode, and between the control gate electrode and the memory gate electrode. Between the control gate electrode and the memory gate electrode, a third insulation film is formed between the second insulation film and the memory gate electrode. The third insulation film is not formed under the memory gate electrode. A part of the memory gate electrode is present under the lower end face of the third insulation film.

Abstract: To provide a variable gain amplifier capable of correcting a DC offset voltage through simpler control even when a gain thereof is changed. A differential output type variable gain amplifier is equipped with a first voltage correction unit coupled to a preceding stage of a variable gain amplifier circuit and for outputting a first correction voltage to correct a potential difference generated between a first conductor provided with a first input resistor and a second conductor provided with a second input resistor, and a second voltage correction unit coupled to a subsequent stage of the variable gain amplifier circuit and for correcting a differential output. A control unit is configured to control the first correction voltage and a correction amount of a potential difference by the second voltage correction unit and thereby attenuate a DC offset voltage included in the differential output.

Abstract: A manufacturing method of a semiconductor device includes preparing a wiring substrate including a first surface, a plurality of first terminals formed on the first surface, and a second surface opposite to the first surface, arranging a first adhesive on the first surface of the wiring substrate, and after the arranging of the first adhesive, mounting a first semiconductor chip, which includes a first front surface, a plurality of first front electrodes formed on the first front surface, a first rear surface opposite to the first front surface, a plurality of first rear electrodes formed on the first rear surface, and a plurality of through electrodes electrically connecting the plurality of first front electrodes to the plurality of first rear electrodes, on the first surface of the wiring substrate via the first adhesive.

Abstract: A high-performance trench gate IGBT is provided. A trench gate IGBT according to one embodiment includes: a semiconductor substrate (11); a channel layer (15) provided on the semiconductor substrate (11); two floating P-type layer (12) provided on both sides of the channel layer 15, the floating P-type layers (12) being deeper than the channel layer (15); two emitter trenches (13) disposed between the two floating P-type layers (12), the emitter trenches (13) being respectively in contact with the floating P-type layers (12); at least two gate trenches (14) disposed between the two emitter trenches (13); and a source diffusion layer (19) disposed between the two gate trenches 14, the source diffusion layer (19) being in contact with each of the gate trenches (14).

Abstract: The present invention ensures more secure connections between devices that comply with a USB power delivery standard. In an embodiment, a power feeding system 1 selects one of a plurality of power supply voltages and performs a power feeding operation via a USB interface, and the power feeding system includes: a USB cable 30 including a security controller 38 that holds security information, and a host 10 that is connected to the USB cable 30, includes an authenticator controller 14, the authenticator controller 14 authenticating the USB cable 30 using the security information received from the USB cable 30, receives a voltage selection signal that selects one of the plurality of power supply voltages, and performs a power feeding operation based on the voltage selection signal. The host 10 carries out the power feeding operation based on the voltage selection signal when the authentication has been successfully performed.

Abstract: In an RFIC provided in a semiconductor device according to an embodiment, a low-noise amplifier (41) for reception and a power amplifier (11) for transmission are connected to a common antenna connection terminal (5). Between the antenna connection terminal (5) and an LNA (41), a circuit (31) is connected to be used for impedance matching, and a semiconductor switch (SW1) is connected in parallel with the circuit (31).

Abstract: A semiconductor integrated circuit which can respond to changes of the amount of retained data at the time of standby is provided. The semiconductor integrated circuit comprises a logic circuit (logic) and plural SRAM modules. The plural SRAM modules perform power control independently of the logic circuit, and an independent power control is performed among the plural SRAM modules. Specifically, one terminal and the other terminal of a potential control circuit of each SRAM module are coupled to a cell array and a local power line, respectively. The local power line of one SRAM module and the local power line of the other SRAM module share a shared local power line. A power switch of one SRAM module and a power switch of the other SRAM module are coupled in common to the shared local power line.

Abstract: According to one embodiment, a semiconductor device includes: a first switch SWx which switches whether or not to supply a first power supply voltage Vx generated by accumulating a charge outputted from a power source 10, as a second power supply voltage VDD to a first circuit 13, and a second switch SW1 which switches whether or not to connect to the first circuit 13 a smoothing capacitor C1 which suppresses a fluctuation of the second power supply voltage VDD, and the first switch SWx is switched to an on state in response to that the first power supply voltage Vx has reached a sufficient voltage, and then the second switch SW1 is switched to the on state in response to that the second power supply voltage VDD has reached a sufficient voltage.

Abstract: A semiconductor device includes a bitwise operation unit and a storage control unit. The bitwise operation unit performs a bitwise operation on first n-bit (n is an integer) data that is storage object data and second data of an n-bit bit pattern and generates third data of a bit pattern that the number of “1s” and the number of “0s” are almost the same as each other. The storage control unit stores the third data into a first storage destination of a storage unit and stores fourth data that is the third data or data that is converted into the third data by performing a bitwise operation that has been predetermined in advance on the data into a second storage destination of the storage unit.

Abstract: An object of the invention is to provide a semiconductor device having improved performance. A method of manufacturing a semiconductor device includes: forming a trench and then forming a first insulating film made of a silicon oxide film through CVD using a gas containing an O3 gas and a TEOS gas to cover the side surface of the trench with the insulating film; forming a second insulating film made of a silicon oxide film through PECVD to cover the side surface of the trench with the second insulating film via the first insulating film; and forming a third insulating film made of a silicon oxide film through CVD using a gas containing an O3 gas and a TEOS gas to close the trench with the third insulating film while leaving a space in the trench.

Abstract: There is provided a semiconductor integrated circuit device that can generate a unique ID with the suppression of overhead. When a unique ID is generated, the potential of a word line of a memory cell in an SRAM is raised above the power supply voltage of the SRAM, and then lowered below the power supply voltage of the SRAM. When the potential of the word line is above the power supply voltage of the SRAM, the same data is supplied to both the bit lines of the memory cell. Thereby, the memory cell in the SRAM is put into an undefined state and then changed so as to hold data according to characteristics of elements or the like configuring the memory cell. In the manufacture of the SRAM, there occur variations in characteristics of elements or the like configuring the memory cell. Accordingly, the memory cell in the SRAM holds data according to variations occurring in the manufacture.

Abstract: An object of the present invention is to improve the degree of freedom in the wiring design of a wiring substrate configuring a semiconductor device. Lands having an NSMD structure and a land-on-through-hole structure are arranged at positions not overlapping with a plurality of leads arranged on a chip loading surface of a wiring substrate in transparent plan view on the outer peripheral side of a mounting surface of the wiring substrate configuring a semiconductor device having a BGA package structure. On the other hand, land parts having the NSMD structure and to which lead-out wiring parts are connected are arranged at positions overlapping with the leads arranged on the chip loading surface of the wiring substrate in transparent plan view on the inner side than the group of lands in the mounting surface of the wiring substrate.

Abstract: A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. A surface protective film is formed over the insulating film including the pad and wires, and an opening is made in the surface protective film. The opening lies over the pad and exposes a surface of the pad. A bump electrode is formed over the surface protective film including the opening. Here, the pad is smaller than the bump electrode. Consequently, the wires are arranged just beneath the bump electrode in the same layer as the pad 10. In other words, the wires are arranged in space which becomes available because the pad is small enough.

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

Abstract: In a method of further enhancing the performance of a narrow active cell IE type trench gate IGBT having the width of active cells narrower than that of inactive cells, it is effective to shrink the cells so that the IE effects are enhanced. However, when the cells are shrunk simply, the switching speed is reduced due to increased gate capacitance. A cell formation area of the IE type trench gate IGBT is basically composed of first linear unit cell areas having linear active cell areas, second linear unit cell areas having linear hole collector areas and linear inactive cell areas disposed therebetween.

Abstract: A semiconductor device includes a trench-gate IGBT enabling the fine adjustment of a gate capacitance independent from cell performance. In a gate wiring lead-out region, a plurality of trenches is arranged spaced apart from each other in an X direction perpendicular to a Y direction. Each trench has a shape enclosed by a rectangular outer outline and a rectangular inner outline in plan view. A trench gate electrode is provided in each of the trenches so as to be electrically coupled to an extraction electrode. To obtain an adequate breakdown voltage between a collector and an emitter, the trenches are formed in a p-type floating region. An n?-type drift region is formed in a region located inside an inner outline of the trench in plan view, whereby a capacitance formed between the trench gate electrode and the n?-type drift region is used as the reverse transfer capacitance.

Abstract: According to one embodiment, a current detection circuit (12) includes: a detection resistor (Rs) provided between a solenoid valve (106) and a solenoid driver (11); an amplification unit (121) configured to amplify a detected voltage of the detection resistor (Rs); an AD converter (122) that is driven by a reference voltage (Vref) generated based on a reference current (Iref) and configured to convert an output voltage from the amplification unit (121) into a digital value and output the digital value as a detected current value (D1); and a correction unit configured to perform a correction on the detected current value (D1).