Abstract: A data processing device, includes a bus, a demultiplexer which receives content including video data and audio data. A memory interface which is coupled to the bus, and which is connectable to a memory for temporarily accumulating the video data and the audio data output from the demultiplexer.

Abstract: A semiconductor device has a clock signal generation circuit that generates a clock signal, and a processing circuit that operates in accordance with the clock signal. The semiconductor device can also include an external terminal and a power source terminal that is coupled to the processing circuit. The clock signal generation circuit changes the frequency of the clock signal to be generated in accordance with the voltage value of a current consumption signal supplied to the external terminal. Further, the voltage value of the current consumption signal is changed in accordance with current consumption flowing in the power source terminal. The clock signal generation circuit can change the frequency of the clock signal to be generated in accordance with a value of an analog signal supplied to the external terminal.

Abstract: A motor driving device and a motor system that can reduce a torque ripple of a motor are provided. The current control loop detects a drive current of the motor, detects an error between the detected value of the drive current and a current indication value as a target value of the drive current, and determines the duty of the PWM signal reflecting the error concerned. The back EMF phase detector detects the phase of a back electromotive force of each phase in the motor. The torque correction unit calculates a first torque correction coefficient of a periodic function based on the phase variations in the three phases of the back electromotive force, and corrects the current indication value superimposing the first torque correction coefficient on the current indication value.

Abstract: A mask includes a substrate, an effective pixel formation region and a reference pattern formation region. A pixel pattern for forming a pixel component that constitutes a pixel is arranged in the effective pixel formation region. A reference pattern for indicating a reference position where pixel pattern should be arranged in the effective pixel formation region is arranged in the reference pattern formation region. Pixel pattern is arranged to be displaced from the reference position toward a center side of the effective pixel formation region.

Abstract: A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.

Abstract: In a compression scan, the number of test steps is reduced without reducing a defection efficiency. A semiconductor apparatus includes one or more scan chains each including one or more MMSFFs being serially connected and combinational circuits and can switch between a scan shift operation and a capture operation. The MMSFF includes an MUX that selects one of an external input test signal which is externally input and a shift test signal which is input via the MMSFF in a preceding stage in the same scan chain, and an FF that outputs one of the external input test signal and the shift test signal which has been selected by the MUX.

Abstract: An improvement is achieved in the performance of a semiconductor device. The semiconductor device includes a first trench gate electrode and second and third trench gate electrodes located on both sides of the first trench gate electrode interposed therebetween. In each of a semiconductor layer located between the first and second trench gate electrodes and the semiconductor layer located between the first and third trench gate electrodes, a plurality of p+-type semiconductor regions are formed. The p+-type semiconductor regions are arranged along the extending direction of the first trench gate electrode in plan view to be spaced apart from each other.

Abstract: A plurality of pixel regions are aligned in a matrix in a semiconductor substrate, and each of the plurality of pixel regions includes an active region, two photoelectric conversion elements, two floating capacitance regions, and a first transistor. Each of the plurality of pixel regions includes two transfer transistors each having each of the two photoelectric conversion elements and each of the two floating capacitance regions. The first transistor is arranged within the pixel region, between one floating capacitance region and the other floating capacitance region of the two floating capacitance regions with respect to a direction in which the one floating capacitance region and the other floating capacitance region are aligned.

Abstract: An image sensor device includes a plurality of pixel cells arranged in a matrix in a pixel array, and a timing control circuit that controls read-out of pixel information from the plurality of pixel cells. Each of the plurality of pixel cells includes a photodiode, a transfer transistor provided between the photodiode and a floating diffusion, a node reset transistor provided between a power supply terminal and the floating diffusion, a read-out capacitor whose one end is connected to the power supply terminal, a capacitor reset transistor provided between another end of the read-out capacitor and the floating diffusion, an amplification transistor that amplifies a voltage generated based on electric charges accumulated in the floating diffusion, and a selection transistor provided between the amplification transistor and a read-out line.

Abstract: A switching power source device for controlling a current flowing through a coil by turning on/off a switching element by a PWM control to obtain a desired DC voltage, includes in a PWM ON period to turn on the switching element by the PWM control, a switching control of the switching element is enabled by a first pulse signal whose cycle is shorter than a PWM cycle based on the PWM control and whose pulse width is gradually increased, in a first period just after the PWM ON period is started, and the switching control of the switching element is enabled by the PWM signal based on the PWM control after the first period has elapsed.

Abstract: To reduce a production cost of a semiconductor device and provide a semiconductor device having improved characteristics. A grating coupler has a plurality of projections separated from each other in an optical waveguide direction and a slab portion formed between any two of the projections adjacent to each other and formed integrally with them; a MOS optical modulator has a projection extending in the optical waveguide direction and slab portions formed on both sides of the projection, respectively, and formed integrally therewith. The projection of the grating coupler and the MOS optical modulator is formed of a first semiconductor layer, a second insulating layer, and a second semiconductor layer stacked successively on a first insulating layer, while the grating coupler and the MOS optical modulator each have a slab portion formed of the first semiconductor layer.

Abstract: A method for manufacturing a semiconductor device includes carrying out a first heat treatment accompanied by nitration on a first insulating film and a silicon carbide substrate in a first gas atmosphere, after the carrying out of the first heat treatment and after a temperature of the silicon carbide substrate has become 700° C. or less, removing the silicon carbide substrate from a processing apparatus and exposing the silicon carbide substrate to air in an atmosphere outside of the processing apparatus, and after the exposing of the silicon carbide substrate to air in the atmosphere, carrying out a second heat treatment on the first insulating film and the silicon carbide substrate in a second gas atmosphere which is an inert gas.

Abstract: An integrated circuit is described. The integrated circuit comprises a one-time programmable non-volatile memory and a memory controller for the one-time programmable non-volatile memory. The memory controller is configured to send a first random number which has been generated in the integrated circuit to a device initialization server. The memory controller is configured, in response to receiving a signed device initialization message from the device initialization server, the signed device initialization message comprising a device initialization message and a corresponding signature, and the device initialization message comprising a second random number and a device identity, to determine whether the first and second random numbers are equal and whether the signature is valid.

Abstract: A semiconductor substrate (1) includes a region (AR3) between a region (AR1) and a region (AR2), a control gate electrode (CG) is formed on an upper surface (TS1) of the region (AR1), and a memory gate electrode (MG) is formed on an upper surface (TS2) of the region (AR2). The upper surface (TS2) is lower than the upper surface (TS1), and the region (AR3) has a connection surface (TS3) connecting the upper surface (TS1) and the upper surface (TS2). An end (EP1) of the connection surface (TS3) which is on the upper surface (TS2) side is arranged closer to the memory gate electrode (MG) than an end (EP2) of the connection surface (TS3) which is on the upper surface (TS1) side, and is arranged lower than the end (EP2).

Abstract: To provide a search device with less memory consumption, the search device includes a first associative memory searched with a first search key, a second associative memory searched with a second search key, a concatenated search data generating unit that generates first search information based on hit information including multiple hits in the first associative memory, and a search key generating unit that includes a first key generating unit generating a portion of search data as the first search key and a second search key generating unit generating the first search information and another portion of the search data as the second search key.

Abstract: To enhance reliability in assembling a semiconductor device. There is provided a wiring substrate including a target mark, which is not provided on an extension line of a dicing region provided between a first semiconductor device region and a second semiconductor device region but is provided between the extension line of the dicing region and a first imaginary extension line of a first outermost peripheral land row and between the extension line of the dicing region and a second imaginary extension line of a second outermost peripheral land row. Furthermore, after mounting a semiconductor chip, wire bonding is performed, resin sealing is performed and a solder ball is mounted. After that, the dicing region is specified on the basis of the target mark, and the wiring substrate is cut along the dicing region.

Abstract: An improvement is achieved in the performance of a semiconductor device having a nonvolatile memory. A memory cell of the nonvolatile memory includes a control gate electrode formed over a semiconductor substrate via a first insulating film and a memory gate electrode formed over the semiconductor substrate via a second insulating film to be adjacent to the control gate electrode via the second insulating film. The second insulating film includes a third insulating film made of a silicon dioxide film, a fourth insulating film made of a silicon nitride film over the third insulating film, and a fifth insulating film over the fourth insulating film. The fifth insulating film includes a silicon oxynitride film. Between the memory gate electrode and the semiconductor substrate, respective end portions of the fourth and fifth insulating films are located closer to a side surface of the memory gate electrode than an end portion of a lower surface of the memory gate electrode.

Abstract: A semiconductor device includes a voltage hold circuit that raises a second boosted voltage with rise of an output voltage of a booster circuit that generates a first boosted voltage and then maintains the second boosted voltage at a point when the output voltage reaches a hold voltage level after that, and a first switch that short-circuits a first output terminal through which the first boosted voltage is output and a second output terminal through which the second boosted voltage is output until the output voltage reaches the hold voltage level.

Abstract: A semiconductor device includes a first circuit block that is connected between a first power supply voltage line and a first reference voltage line, a second circuit block that is connected between a second power supply voltage line and a second reference voltage line and transmits and receives signals with the first circuit block, a first clamp circuit that clamps a potential difference between the second power supply voltage line and the first reference voltage line, a resistor circuit that is connected between the second power supply voltage line and the second circuit block and includes a resistance value that is greater than an impedance of the first clamp circuit, and a second clamp circuit that clamps a potential difference between a line connected between the resistor circuit and the second circuit block and the first reference voltage line.

Abstract: In order to reduce the manufacturing cost, a flash memory includes a memory cell array formed by a plurality of memory cells arranged in a matrix shape; a plurality of word lines provided in each column of the memory cell array; a first word line driver that outputs a first voltage group to each of the word lines; and a second word line driver that outputs a second voltage group to each of the word lines together with the first word line driver.