Abstract: In a multiple data continuous write to a non-volatile memory, a write determination is performed by eliminating as much as possible the effect of the amount of threshold variation due to electron-hole recombination generated in a write operation of a memory cell. It is controlled so that a cycle (tw) of performing a write operation on a memory cell in a write operation and a cycle (tv+tw?tv) of performing a write verify operation on a memory cell in a write verify operation are the same. Alternatively, as address advances from a first address to the nth address (n is an integer) where continuous write is performed, a determination condition in the write verify operation is made severer.

Abstract: An object of the present invention is to reduce the manufacturing cost of a semiconductor device. A semiconductor device includes a SOI substrate that has an optical waveguide including a semiconductor layer. The optical waveguide is covered with an interlayer insulating film. Wiring parts are formed on the interlayer insulating film. Moreover, a thin film part having a smaller thickness than the wiring parts is formed above the optical waveguide and is integrated with the wiring parts.

Abstract: Wells formed in a semiconductor device can be discharged faster in a transition from a stand-by state to an active state. The semiconductor device includes an n-type well applied, in an active state, with a power supply voltage and, in a stand-by state, with a voltage higher than the power supply voltage, a p-type well applied, in the active state, with a ground voltage and, in the stand-by state, with a voltage lower than the ground voltage, and a path which, in a transition from the stand-by state to the active state, electrically couples the n-type well and the p-type well.

Abstract: The present invention enables an unaligned access of a DMA controller to be dealt at the time of obtaining trace data. A DMA controller receives a DMA request and accesses a memory via a bus on a predetermined access unit basis in accordance with the received DMA request. When the DMA request indicates “read”, a trace interface outputs the data obtained from the memory by the DMA controller, a start address designated by the DMA request, and valid transfer size in the data obtained from the memory to a trace circuit. The trace circuit stores data of the amount of the valid transfer size from the start address designated by the DMA request in the data obtained from the memory into the trace buffer.

Abstract: To provide a semiconductor device having improved reliability by relaxing the unevenness of the injection distribution of electrons and holes into a charge accumulation film attributable to the shape of the fin of a MONOS memory comprised of a fin transistor. Of a memory gate electrode configuring a memory cell formed above a fin, a portion contiguous to an ONO film that covers the upper surface of the fin and a portion contiguous to the ONO film that covers the side surface of the fin are made of electrode materials different in work function, respectively, and the boundary surface between them is located below the upper surface of the fin.

Abstract: A P-type well is defined by an isolation region formed in a semiconductor substrate. A pixel region and a ground region are defined in the P-type well. In the pixel region, a pixel transistor region and a photodiode region having a photodiode formed therein are defined. An antireflection film is formed so as to cover at least the photodiode region and the ground region. A plug connected to the ground region is formed so as to extend through the antireflection film and the like.

Abstract: To provide a semiconductor device equipped with a snubber portion having an improved withstand voltage and capable of reducing a surge voltage at turn-off of an insulated gate field effect transistor portion. The concentration of a first conductivity type impurity in a snubber semiconductor region is greater than that in a drift layer. The thickness of a snubber insulating film between the snubber semiconductor region and a snubber electrode is greater than that of a gate insulating film between a gate electrode and a body region.

Abstract: In a MONOS memory, withstand voltage is increased between a control gate electrode over an ONO film having a charge accumulating part and a semiconductor substrate. When a silicon film is processed to form a control gate electrode, dry etching is performed for a relatively long time, thereby a recess is formed in a sidewall of the control gate electrode. Subsequently, the control gate electrode is subjected to dry oxidation treatment to form an insulating film on the sidewall of the control gate electrode including the recess, thereby an end of the bottom of the control gate electrode is separated from an end of the top of the ONO film.

Abstract: A wiring board of an electronic device includes: a board terminal connected to a semiconductor device (semiconductor component); a wire formed in a first wiring layer and electrically connected to the board terminal; a conductor pattern formed in a second wiring layer and electrically connected to the wire via a via wire; and another conductor pattern formed in a third wiring layer and supplied with a first fixed potential. The conductor pattern and the another conductor pattern face each other with an insulating layer interposed therebetween, and an area of a region where the conductor pattern and the another conductor pattern face each other is larger than an area of the wire.

Abstract: To improve reliability of a semiconductor device, a control transistor and a memory transistor formed in a memory cell region are configured to have a double-gate structure, and a transistor formed in a peripheral circuit region is configured to have a triple-gate structure. For example, in the memory transistor, a gate insulating film formed by an ONO film is provided between a memory gate electrode and sidewalls of a fin, and an insulating film (a stacked film of a multilayer film of an insulating film/an oxide film and the ONO film) thicker than the ONO film is provided between the memory gate electrode and a top surface of the fin. This configuration can reduce concentration of an electric field onto a tip of the fin, so that deterioration of reliability of the ONO film can be prevented.

Abstract: To provide a semiconductor product high in versatility. A common drain pad is formed over the surface of a semiconductor chip together with source pads and gate pads of discharging and charging power transistors. Thus, when the semiconductor chip is face-down mounted over a wiring board, not only the source pads and gate pads of the discharging and charging power transistors, but also the common drain pad is electrically coupled to wirings of the wiring board.

Abstract: The semiconductor device including: two fins having rectangular parallelepiped shapes arranged in parallel in X-direction; and a gate electrode arranged thereon via a gate insulating film and extending in Y-direction is configured as follows. First, a drain plug is provided over a drain region located on one side of the gate electrode and extending in Y-direction. Then, two source plugs are provided over a source region located on the other side of the gate electrode and extending in Y-direction. Also, the drain plug is arranged in a displaced manner so that its position in Y-direction may not overlap with the two source plugs. According to such a configuration, the gate-drain capacitance can be made smaller than the gate-source capacitance and a Miller effect-based circuit delay can be suppressed. Further, as compared with capacitance on the drain side, capacitance on the source side increases, thereby improving stability of circuit operation.

Abstract: In order to provide an imaging device suitable for suppressing a reduction of the frame rate without deteriorating the image quality, a sensor includes two photodiodes for receiving incident light through a microlens, a first transfer transistor that transfers the output electric charges of the first photodiode when a first transfer control signal becomes active, a second transfer transistor that transfers the output electric charges of the second photodiode when a second transfer control signal becomes active, a first output signal line that transmits a first pixel signal depending on the transferred electric charges by the first transfer transistor, and a second output signal line that transmits a second pixel signal depending on the transferred electric charges by the second transfer transistor.

Abstract: A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in a protective film over each bonding pad in such a manner that an overlapping width of the protective film in a wire bonding region of each bonding pad becomes wider than an overlapping width of the protective film in a probe region of each bonding pad.

Abstract: A semiconductor device is provided with an insulating layer formed on a base substrate, an optical waveguide composed of a semiconductor layer formed on the insulating layer, and an insulating film formed along an upper surface of the insulating layer and a front surface of the optical waveguide. A peripheral edge portion of a lower surface of the optical waveguide is separated from the insulating layer, and the insulating film is buried between the peripheral edge portion and the insulating layer.

Abstract: It is intended to reduce the price of a semiconductor device and increase the reliability thereof. In an interposer, a plurality of wiring layers are disposed between uppermost-layer wiring and lowermost-layer wiring. For example, a third wiring layer is electrically coupled directly to a first wiring layer as the uppermost-layer wiring by a long via wire extending through insulating layers without intervention of a second wiring layer. For example, an upper-surface terminal made of the first wiring layer is electrically coupled directly to a via land made of the third wiring layer by the long via wire. Between the adjacent long via wires, three lead-out wires made of the second wiring layer can be placed. The number of the lead-out wires that can be placed between the adjacent long via wires is larger than the number of the lead-out wires that can be placed between the adjacent via lands.

Abstract: A plurality of semiconductor devices each including a semiconductor chip having a high-side MOSFET and a semiconductor chip having a low-side MOSFET are mounted on a wiring board (PB1). The wiring board (PB1) includes a power supply wiring WV1 to which a power supply potential is supplied and output wirings WD1, WD2, and WD3 electrically connecting a low-side drain terminal of each of the plurality of semiconductor devices to a plurality of output terminals. A minimum value and a maximum value of a current path width in the power supply wiring WV1 are referred to as a first minimum width and a first maximum width, respectively, and a minimum value and a maximum value of a current path width in the output wirings WD1, WD2, and WD3 are referred to as a second minimum width and a second maximum width, respectively.

Abstract: A semiconductor device includes a bus, first and second bus drivers that drive the bus, and a control circuit that controls the first and second bus drivers. The control circuit controls the first and second bus drivers in such a way that the first and second bus drivers supply logic signals different from each other to the bus.

Abstract: A first semiconductor device having a power transistor for switching is mounted on a power wiring substrate PB1; a semiconductor device PKG6 having a driving circuit for driving the first semiconductor device and a semiconductor device PKG5 having a control circuit for controlling the semiconductor device PKG6 are mounted on a first principal surface of a control wiring substrate PB2; and a semiconductor device PKG4 having a regulator circuit is mounted on a second principal surface of the control wiring substrate PB2. On the first principal surface of the control wiring substrate PB2, the semiconductor device PKG5 and the semiconductor device PKG6 are mounted in a second area out of the second area and a third area adjacent to each other via a first area in which a plurality of holes HC3 are arranged.

Abstract: An improvement is achieved in the reliability of a semiconductor device. Over a die pad, first and second semiconductor chips are mounted. The first and second semiconductor chips and a part of the die pad are sealed in a sealing portion. The first semiconductor chip includes a power transistor. The second semiconductor chip controls the first semiconductor chip. The thickness of the portion of the die pad over which the first semiconductor chip is mounted is smaller than the thickness of the portion of the die pad over which the second semiconductor chip is mounted.