Abstract: A semiconductor device includes a power supply circuit which generates an output voltage to be supplied to a USB device connected to a USB connector, a sensing circuit which senses an output voltage or an output state of the power supply circuit, a control circuit which controls the power supply circuit, and a register which stores an output set voltage value associated with the power supply circuit or various types of information. The control circuit outputs a notification signal based on a result of sensing by the sensing circuit to the outside.

Abstract: Image processing is made efficient. An image processing apparatus according to an embodiment includes a line memory, a plurality of pipelines, and a line memory control circuit that controls data reading from the line memory to processing units. The processing unit includes a first operator that performs a first arithmetic operation, a second operator which performs a second arithmetic operation based on first intermediate data based on an arithmetic operation result of the first operator and which calculates second intermediate data according to the first intermediate data of when peripheral pixels are sequentially changed, third operators which perform a third arithmetic operation based on the first intermediate data and which calculate third intermediate data according to the first intermediate data of when the peripheral pixels are sequentially changed, and delay elements that delay the third intermediate data.

Abstract: A semiconductor device includes a high voltage NMOS transistor formation region defined by an element isolation insulating film, a CMOS transistor formation region defined by an element isolation insulating film, and a substrate contact portion. The substrate contact portion is formed in a region of a semiconductor substrate that is positioned between the high voltage NMOS transistor formation region and the element isolation insulating film so as to reach from the main surface side to a position deeper than the bottom of the element isolation insulating film. The substrate contact portion is in contact with the semiconductor substrate from a depth over a depth.

Abstract: An object of the present invention is to prevent an attack from or via a communication device on an information apparatus in a communication system including the information apparatus, the communication device coupled to the information apparatus in the aftermarket, a server that authenticates the communication device, and a communication unit between the communication device and the server. A communication device includes a first interface that performs first communications with a server, a second interface that performs second communications with an information apparatus, and an information processing unit that performs an information process including a communication protocol process accompanied by the first and second communications.

Abstract: There is provided a semiconductor integrated circuit device that can generate a unique ID with the suppression of overhead. When a unique ID is generated, the potential of a word line of a memory cell in an SRAM is raised above the power supply voltage of the SRAM, and then lowered below the power supply voltage of the SRAM. When the potential of the word line is above the power supply voltage of the SRAM, the same data is supplied to both the bit lines of the memory cell. Thereby, the memory cell in the SRAM is put into an undefined state and then changed so as to hold data according to characteristics of elements or the like configuring the memory cell. In the manufacture of the SRAM, there occur variations in characteristics of elements or the like configuring the memory cell. Accordingly, the memory cell in the SRAM holds data according to variations occurring in the manufacture.

Abstract: A semiconductor device according to the present invention includes: a memory unit provided with a lower-order memory and a cache memory to cache a data stored in the lower-order memory; a power control circuit to control power supply of the lower-order memory; and a bus master to access the data stored in the memory unit after locking the bus. When the power supply of the lower-order memory is cut off at the time of occurrence of a mishit of the cache memory, the power control circuit restores the power supply of the lower-order memory, and the memory unit outputs a response to the access to the bus master. The bus master once releases the lock of the bus according to the response from the memory unit and reexecutes the access with the bus locked, after the restoration of the power supply of the lower-order memory is completed.

Abstract: Characteristics of a semiconductor device are improved. A semiconductor device of the present invention includes a buffer layer composed of a first nitride semiconductor layer, a channel layer composed of a second nitride semiconductor layer, and a barrier layer composed of a third nitride semiconductor layer, which are sequentially laminated, and a cap layer composed of a fourth nitride semiconductor layer of mesa type, which is formed over the barrier layer. The semiconductor device also includes a source electrode formed on one side of the cap layer, a drain electrode formed on the other side of the cap layer, and a first gate electrode formed over the cap layer. The first gate electrode and the cap layer are Schottky-joined. A Schottky gate electrode (the first gate electrode) is provided over the cap layer in this way, so that when a gate voltage is applied, an electric field is applied to the entire cap layer and a depletion layer spreads. Therefore, it is possible to suppress a gate leakage current.

Abstract: A method of manufacturing a semiconductor device, includes forming a fin structure on a main surface of semiconductor substrate, the fin structure including a silicon material; forming a first gate electrode over the fin structure via a first insulating film, and forming a second gate electrode over the fin structure via a second insulating film having a charge accumulating part, such that the second gate electrode is disposed along a sidewall of the first gate electrode in a plan view; forming source and drain regions over a surface of the fin structure at both sides of a structure defined by the first and second gate electrodes; performing a first heat treatment to the semiconductor substrate to keep the semiconductor substrate at a first predetermined temperature; and forming a first metal film on the fin structure by sputtering in condition that the semiconductor substrate is at the first predetermined temperature.

Abstract: Variations in height of a top of an element isolation region, which is embedded in a trench surrounding the periphery of a fin having a channel region of a split-gate MONOS memory, are suppressed to improve reliability of a semiconductor device. An element isolation region embedded in a trench between a plurality of fins, which are part of a semiconductor substrate in a memory cell region and protrude above the semiconductor substrate, is comprised of an insulating film covering the bottom of the trench and a silicon nitride film covering the top of the insulating film.

Abstract: Provided is a CRC calculation circuit capable of dealing with various types of generator polynomials with a simple configuration. A CRC calculation circuit (100) includes a generator polynomial register (110) configured to store polynomial data, and a plurality of CRC calculation units (120) connected in series and provided so as to correspond to the number of bits of input data. The CRC calculation units (120) each include a barrel shifter (121) configured to shift calculated data by one bit using the input data or output data from a pre-stage CRC calculation unit as the calculated data; an XOR circuit (122) configured to perform XOR calculation of the shifted data and the polynomial data; and a multiplexer (123) configured to select, based on the calculated data, the shifted data or calculation result data.

Abstract: A power supply device includes a plurality of power sources each including an antenna and an AC/DC conversion unit that converts an AC signal received by the antenna to a DC signal, a plurality of consolidating units each including a first consolidating circuit that selectively consolidates a plurality of DC signals supplied by the plurality of power sources, and a power supply unit that includes a second consolidating circuit that selectively consolidates DC signals output from the plurality of consolidating units, and a first voltage conversion circuit that converts a DC signal resulting from consolidation in the second consolidating circuit, to a predetermined voltage.

Abstract: In a semiconductor memory device, static memory cells are arranged in rows and columns, word lines correspond to respective memory cell rows, and word line drivers drive correspond to word lines. Cell power supply lines correspond to respective memory cell columns and are coupled to cell power supply nodes of a memory cell in a corresponding column. Down power supply lines are arranged corresponding to respective memory cell columns, maintained at ground voltage in data reading and rendered electrically floating in data writing. Write assist elements are arranged corresponding to the cell power supply lines, and according to a write column instruction signal for stopping supply of a cell power supply voltage to the cell power supply line in a selected column, and for coupling the cell power supply line arranged corresponding to the selected column at least to the down power supply line on the corresponding column.

Abstract: Bus/memory bandwidth consumption caused by reading of auxiliary information not included in compressed data is reduced. A memory stores compressed data and auxiliary information used to read the compressed data. A semiconductor device includes a cache in which auxiliary information stored in the memory is stored, a control unit which, when a read request for reading compressed data stored in the memory is received, reads from the cache auxiliary information about the compressed data, if stored in the cache, or reads the auxiliary information about the compressed data, if not stored in the cache, from the memory and stores the auxiliary information about the compressed data in the cache, and which reads the compressed data from the memory using the auxiliary information about the compressed data, and an expansion unit to expand the compressed data read from the memory.

Abstract: A data processing apparatus includes a memory, a processor which outputs write data when making a write request to the memory, and which inputs read data when making a read request to the memory, a parity generating circuit which generates a parity comprising a plurality of parity bits from the write data, the parity being written with the write data into the memory, and a parity check circuit which is coupled between the memory and the processor, and which detects a presence or absence of an error of one bit or two bits in the read data and the parity read from the memory, wherein the parity generating circuit generates the parity so that at least one of a first write data bit and a second write data bit included in the write data contributes to generation of at least two parity bits.

Abstract: A semiconductor device includes a trench-gate IGBT enabling the fine adjustment of a gate capacitance independent from cell performance. In a gate wiring lead-out region, a plurality of trenches is arranged spaced apart from each other in an X direction perpendicular to a Y direction. Each trench has a shape enclosed by a rectangular outer outline and a rectangular inner outline in plan view. A trench gate electrode is provided in each of the trenches so as to be electrically coupled to an extraction electrode. To obtain an adequate breakdown voltage between a collector and an emitter, the trenches are formed in a p-type floating region. An n?-type drift region is formed in a region located inside an inner outline of the trench in plan view, whereby a capacitance formed between the trench gate electrode and the n?-type drift region is used as the reverse transfer capacitance.

Abstract: A semiconductor device includes an insulating film formed to cover an electric fuse (EF1), an insulating film (IL1), an insulating film (IL2), an electric fuse (EF1), an insulating film (IL1), and an insulating film (IL2). The electric fuse (EF1) includes a fuse-blowing portion (FC1), a first pad portion (PD1), and a second pad portion (PD2). The fuse-blowing portion (FC1) is formed between the first pad portion (PD1) and the second pad portion (PD2) in a first direction and is a rectangular shape having a first short side and a second short side along a second direction perpendicular to the first direction. The insulating film (IL1) is formed continuously between the first short side and the second short side to cover the surface of the fuse-blowing portion (FC1). The insulating film (IL2) is formed to planarly surround the insulating film (IL1) and is arranged at an interval from the insulating film (IL1).

Abstract: There is a need to provide a central processing unit capable of improving the resistance to power analysis attack without changing programs, lowering clock frequencies, and greatly redesigning a central processing unit of the related art. In a central processing unit, an arithmetic unit is capable of performing arithmetic operation using data irrelevant to data stored in a register group. A control unit allows the arithmetic unit to perform arithmetic processing corresponding to an incorporated instruction. At this time, the control unit allows the arithmetic unit to perform arithmetic processing using the irrelevant data during a first one-clock cycle.

Abstract: A battery control IC includes a voltage measurement unit that measures, in a normal current mode, a voltage value of each of a plurality of unit battery cells forming a battery pack, and measures, in a short-time large-current mode, a voltage value of a unit battery cell that has exhibited a lowest voltage value in the normal current mode, and a calculation unit that calculates an available power value of the battery pack in the short-time large-current mode based on a voltage value, measured in the short-time large-current mode, of the unit battery cell that has exhibited the lowest voltage value in the normal current mode.

Abstract: An electrostatic protection element whose electrostatic breakdown resistance can be adjusted with a required minimum design change is provided. A semiconductor device includes an electrostatic protection element including a bipolar transistor whose base region and emitter region are electrically coupled together through a resistance region. At this time, the base region of the electrostatic protection element has a side including a facing portion that faces the collector region. The facing portion of the side includes an exposed portion that is exposed from an emitter wiring in plan view and a covered portion that is covered by the emitter wiring in plan view.

Abstract: In one embodiment, a semiconductor device (20) includes a semiconductor chip (200) in which functional blocks (201, 202, 203 etc.) and a temperature sensor (208) are integrated. In this embodiment, in response to a change in an operation state of the semiconductor device (20), the on-chip temperature sensor (208) operates to switch from a continuous operation in which it continuously measures a chip temperature to an intermittent operation in which it intermittently measures the chip temperature, or to change a time interval between intermittent measurements of the chip temperature.