Abstract: An improvement is achieved in the reliability of a semiconductor device. Over a die pad, first and second semiconductor chips are mounted. The first and second semiconductor chips and a part of the die pad are sealed in a sealing portion. The first semiconductor chip includes a power transistor. The second semiconductor chip controls the first semiconductor chip. The thickness of the portion of the die pad over which the first semiconductor chip is mounted is smaller than the thickness of the portion of the die pad over which the second semiconductor chip is mounted.

Abstract: A semiconductor device according to an embodiment has a first semiconductor component and a second semiconductor component which are electrically connected with each other via an interposer. The interposer has a plurality of first signal wiring paths, and a plurality of second signal wiring paths each having a path distance smaller than each of the plurality of first signal wiring paths. Furthermore, the first semiconductor component includes a first electrode, a second electrode, and a third electrode arranged in order in a first direction. Furthermore, the second semiconductor component includes a fourth electrode, a fifth electrode, and a sixth electrode arranged in order in the first direction. Furthermore, the first electrode is connected with the fourth electrode via the first signal wiring path, the second electrode is connected with the fifth electrode via the first signal wiring path, and the third electrode is connected with the sixth electrode via the first signal wiring path.

Abstract: There is to provide a semiconductor device including a light receiving element capable of reducing the manufacturing cost and improving the optical performance of the light receiving element. For example, a p type germanium layer, an intrinsic germanium layer, and an n type germanium layer forming the structure body of a Ge photodiode are formed according to a continuous selective epitaxial growth. An insulating film having an opening portion is formed on the silicon layer of a SOI substrate, and an intrinsic germanium layer is formed bulging from the opening portion to above the insulating film. In short, by using the insulating film having the opening portion, the cross section of the intrinsic germanium layer is formed into a mushroom shape.

Abstract: A semiconductor device that can rapidly stabilize a control voltage for controlling an electric current source is provided. A semiconductor device includes a filter circuit that is provided between a control voltage generation circuit and an electric current source and removes noise of the control voltage. The filter circuit includes a first resistive element that is provided between the control voltage generation circuit and an output node that outputs the control voltage, a first capacitive element that is provided between the output node and a first voltage, a second capacitive element that is coupled between the output node and the first voltage via a first switch element. The second capacitive element is coupled between the first voltage and a second voltage when the first switch element is non-conductive. The second capacitive element is coupled with the first capacitive element through the output node when the first switch element is conductive.

Abstract: A semiconductor device includes a semiconductor substrate having a main surface, a first insulating film formed on the main surface, a first coil formed on the first insulating film, a second insulating film formed on the first coil and having a first main surface and first side surfaces continuous with the first main surface, a third insulating film formed on the first main surface of the second insulating film and having a second main surface and second side surfaces continuous with the second main surface, and a second coil formed on the second main surface of the third insulating film. The second insulating film and the third insulating film are formed as a laminated insulating film together. A thickness of the second coil is greater than a thickness of the first coil in a thickness direction of the semiconductor substrate.

Abstract: A video decoding processing apparatus which can reduce overhead for the start of parallel decoding processing. The video decoding processing apparatus includes a parsing unit, and first and second video processing units. A coding bit stream including information of largest coding units each having at least a prescribed pixel size is supplied to an input terminal of the parsing unit. The parsing unit performs parsing of the syntax of the coding bit stream to thereby generate parallel-processable first and second intermediate streams from the largest coding unit. The first and second video processing units parallel-process the first and second intermediate streams generated from the parsing unit.

Abstract: A signal converter 100 includes, for at least two-phase signals detected by a resolver excited by a carrier signal having a carrier frequency fc, a first phase shifter 101 that shifts a phase of a first phase signal of the resolver with a pole at a frequency f1 lower than the carrier frequency fc, a second phase shifter 102 that shifts a phase of a second phase signal of the resolver with a pole at a frequency f2 higher than the carrier frequency fc, and a synthesizer 103 that combines the phase-shifted first phase signal with the phase-shifted second phase signal.

Abstract: A PFC signal generation circuit which generates a PFC signal to control a PFC circuit including a first inductor L1 connected to a first switch NM1 and a second inductor L2 connected to a second switch NM2 includes: a counter 101 whose count value is cleared based on a first timing when a zero current of the first inductor L1 is detected; a counter clear control circuit 202 that clears the count value after waiting until a cycle lower limit is reached, when the first timing is below the cycle lower limit; a first control signal output unit 109 that outputs a first PFC signal to turn on the first switch NM1 at a timing when the count value is cleared; and a second control signal output unit 117 that outputs a second PFC signal to turn on the second switch NM2 based on a second timing when a zero current of the second inductor L2 is detected. This leads to an improvement in power factor correction by the PFC circuit.

Abstract: A mark is formed over the surface of a silicon substrate. The mark includes a silicon oxide film, in which a plurality of rectangular groove patterns are concentrically arranged, and a silicon nitride film formed in the groove patterns. A P-type epitaxial layer is formed over the surface of the silicon substrate. Then, a photoresist pattern is formed. In the photoresist pattern, a rectangular opening pattern is formed in a mark region. Optical superposition inspection is performed for the base of the photoresist pattern.

Abstract: A p-type well is formed in a semiconductor substrate, and an n+-type semiconductor region and a p+-type semiconductor region are formed in the p-type well to be spaced apart from each other. The n+-type semiconductor region is an emitter semiconductor region of a bipolar transistor, and the p-type well and the p+-type semiconductor region are base semiconductor regions of the bipolar transistor. An electrode is formed on an element isolation region between the n+-type semiconductor region and the p+-type semiconductor region, and at least apart of the electrode is buried in a trench which is formed in the element isolation region. The electrode is electrically connected to the n+-type semiconductor region.

Abstract: A processor system (10) includes: a first memory controller (16) that controls writing/reading data to/from a first memory (60); a second memory controller (17) that controls writing/reading data to/from a second memory (70); a first processor (13) that inputs and outputs the data from and to the first memory through a bus (14); a second processor (11) that inputs and outputs processed data from and to the second memory through the bus; and a management unit 32 that deallocates an address range corresponding to the second memory from the first process and allocates the address range to the second processor.

Abstract: A semiconductor device manufacturing method includes forming a plurality of semiconductor chips on a main surface of a semiconductor wafer, electrically testing each of the semiconductor chips, dicing the semiconductor wafer into individual semiconductor chips and assembling each of the semiconductor chips into a package to be a semiconductor device, subjecting the packages to a burn-in test, determining whether each of the semiconductor chips requires the burn-in test to be performed, and generating a determination model for determining whether the semiconductor chips require the burn-in test to be performed.

Abstract: A semiconductor device having a nonvolatile memory cell arranged in a p-type well (active region) PW1 in a memory cell region 1A in a semiconductor substrate 1 and an MISFET arranged in a p-type well PW2 (active region) or an n-type well (active region) in a peripheral circuit region 2A is constructed as follows. The surface of an element isolation region STI1 surrounding the p-type well PW1 is set lower than the surface of an element isolation region STI2 surrounding the p-type well PW2 or the n-type well (H1<H2). By making the surface of the element isolation region STI1 receded and lowered, the effective channel width of both a control transistor and a memory transistor can be increased. Since the surface of the element isolation region STI2 is not made receded, an undesired film can be prevented from being residual over a dummy gate electrode.

Abstract: A correlation operation circuit includes a first SRAM storing a plurality of pieces of detection pattern data, product-sum operators, a second SRAM storing intermediate data, and a comparator. When time series data is sequentially input, the intermediate data of all correlation functions referring to one time series data in a period during which the one time series data is input. When one time series data is input, the product-sum operator multiplies the detection pattern data sequentially read from the first SRAM by the one input time series data. The corresponding intermediate data is read from the second SRAM in synchronization with the multiplication, and the sequentially-calculated products are cumulatively added to the read intermediate data to be written back into the second SRAM as the intermediate data. As a result, the calculated correlation function data is supplied to the comparator to be compared with a predetermined specified value.

Abstract: A semiconductor device in which, in principle, plural interrupt request signals can be inputted to a single interrupt terminal is provided. In the semiconductor device, peripheral devices output interrupt request signals of mutually different waveforms. When an interrupt request signal outputted from one of the peripheral devices is received, a microcomputer unit identifies the one of the peripheral devices based on the waveform of the received interrupt request signal. When an interrupt request signal is outputted from any one of the peripheral devices, the interrupt request signal is also inputted to the other ones of the peripheral devices. When one of the peripheral devices receives an interrupt request signal outputted from another one of the peripheral devices, the one of the peripheral devices can output an interrupt request signal of its own only after elapse of a predetermined output inhibition time.

Abstract: An improvement is achieved in the performance of a semiconductor device. The semiconductor device includes a metal plate having an upper surface (first surface), a lower surface (second surface) opposite to the upper surface, and a plurality of side surfaces located between the upper and lower surfaces and having a semiconductor chip mounted thereover. A portion of the metal plate is exposed from a sealing body sealing the semiconductor chip. The exposed portion is covered with a metal film. The side surfaces of the metal plate include a first side surface covered with the sealing body and a side surface (second side surface) provided opposite to the first side surface and exposed from the sealing body. Between the upper and side surfaces of the metal plate, an inclined surface inclined with respect to each of the upper and side surfaces and covered with the metal film is interposed.

Abstract: A semiconductor apparatus includes a storage circuit, a processing circuit that performs processing using data stored in the storage circuit and writes data into the storage circuit as the processing is performed, a scan test circuit that executes a scan test on the processing circuit when the processing circuit does not perform processing, and an inhibit circuit that inhibits writing of data from the processing circuit to the storage circuit when the scan test on the processing circuit is executed.

Abstract: Provided is a semiconductor device which can be prevented from increasing in size. The semiconductor device includes a semiconductor chip having a first main surface and a second main surface opposite to the first main surface and a wiring substrate over which the semiconductor chip is mounted such that the second main surface of the semiconductor chip faces a first main surface of the wiring substrate. Over the second main surface of the semiconductor chip, a plurality of first terminals connected with a first circuit and a plurality of second terminals connected with a second circuit are arranged. An arrangement pattern of the plurality of first terminals and an arrangement pattern of the plurality of second terminals include the same arrangement pattern. In a region of the wiring substrate where the first circuit is close to the second circuit when viewed from the first main surface of the semiconductor chip, a voltage line which supplies a power supply voltage to the first circuit is formed.

Abstract: A rectangular optical waveguide, an optical phase shifter and an optical modulator each formed of a semiconductor layer are formed on an insulating film constituting an SOI wafer, and then a rear insulating film formed on a rear surface of the SOI wafer is removed. Moreover, a plurality of trenches each having a first depth from an upper surface of the insulating film are formed at a position not overlapping with the rectangular optical waveguide, the optical phase shifter and the optical modulator when seen in a plan view in the insulating film. As a result, since an electric charge can be easily released from the SOI wafer even when the SOI wafer is later mounted on the electrostatic chuck included in the semiconductor manufacturing apparatus, the electric charge is less likely to be accumulated on the rear surface of the SOI wafer.

Abstract: The present invention provides a voltage generation circuit which outputs high-precision output voltage in a wide temperature range. A semiconductor device has a voltage generation circuit. The voltage generation circuit has a reference voltage generation circuit which outputs reference voltage, and a plurality of correction circuits for generating a correction current and making it fed back to the reference voltage generation circuit. The correction circuits generate sub correction currents which monotonously increase from predetermined temperature which varies among the correction circuits toward a low-temperature side or a high-temperature side. The correction current is sum of a plurality of sub correction currents.