Abstract: A nitride semiconductor device 1 includes a first nitride semiconductor layer 13 that constitutes an electron transit layer, a second nitride semiconductor layer 14 that is formed on the first nitride semiconductor layer and constitutes an electron supply layer, a nitride semiconductor gate layer 15 that is disposed on the second nitride semiconductor layer, has a ridge portion 15A at least at a portion thereof, and contains an acceptor type impurity, a gate electrode 4 that is disposed at least on the ridge portion of the nitride semiconductor gate layer, a source electrode 3 that is disposed on the second nitride semiconductor layer and has a source principal electrode portion 3A parallel to the ridge portion, and a drain electrode 5 that is disposed on the second nitride semiconductor layer and has a drain principal electrode portion 5A parallel to the ridge portion.

Abstract: A semiconductor device includes a semiconductor chip, a plurality of leads that each includes a lead body portion which has a mounting portion which includes an upper surface whereon a semiconductor chip is bonded, and a lead connecting portion for external connection which projects downward from a lower surface of the lead body portion, a first sealing resin that seals a space that is defined by each lead body portion and each lead connecting portion of the plurality of leads in a region below the upper surface of each lead body portion of the plurality of leads, and a second sealing resin that seals the semiconductor chip in a region above the upper surface of each lead body portion of the plurality of leads.

Abstract: A control circuit controls an input apparatus to be used underwater. A sense pin is coupled to a sensor electrode arranged so as to allow the user wearing equipment to touch the sensor electrode. A capacitance sensor is coupled to the sense pin, and detects the electrostatic capacitance formed by the sensor electrode. When the electrostatic capacitance Cs detected by the capacitance sensor becomes lower than a predetermined threshold value, the processing unit judges that a touch input by the user has occurred.

Abstract: A semiconductor device includes a wiring board, a semiconductor chip, and a connecting member provided between a surface of the wiring board and a functional surface of the semiconductor chip. The connecting member extends a distance between the wiring board surface and the functional surface. A sealing material seals a gap space between the wiring board and the semiconductor chip. An electrode is formed at the wiring board surface and arranged outside of an outer periphery of the sealing material. A lateral distance between an outer periphery of the semiconductor chip and the outer periphery of the sealing material is between 0.1 mm and a lateral distance from the outer periphery of the semiconductor chip to the electrode.

Abstract: A semiconductor device includes: a semiconductor layer; cell trenches formed in the semiconductor layer; an insulating layer on the semiconductor layer; electrodes, each embedded in corresponding one of the cell trenches via the insulating layer; and one or more outer peripheral trenches formed in the semiconductor layer, wherein the cell trenches include: first set of cell trenches extending in first direction and arranged at first pitch in second direction; and second set of cell trenches extending in the second direction and arranged at second pitch in the first direction, wherein the semiconductor layer includes first and second cell regions where the first and second sets of cell trenches are arranged respectively, and the one or more peripheral trenches surround the first and second cell regions in a plan view, and wherein inter-cell distance between the first and second cell regions is smaller than both the first and second pitches.

Abstract: An acceleration sensor includes a first substrate and a second substrate, wherein the first substrate includes: a first anchor region provided on a partial region of a bottom surface of a first substrate cavity; a first anchor protruding from the first anchor region toward the second substrate along a first direction; a spring extending from the first anchor in a second direction perpendicular to the first direction; and a movable electrode mechanically connected to and electrically insulated from the spring, and configured to be displaced in the first direction, and wherein the second substrate includes: a second anchor region provided on a partial region of a bottom surface of a second substrate cavity; a second anchor protruding from the second anchor region toward the first substrate along the first direction; and a fixed electrode mechanically fixed to the second anchor and facing the movable electrode.

Abstract: A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at an other surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

Abstract: A current mode control type switching power supply device includes a first switch having a first terminal connected to a first application terminal to which an input voltage is applied, and a second switch having a first terminal connected to a second terminal of the first switch and a second terminal connected to a second application terminal to which a predetermined voltage lower than the input voltage is applied. A current sensor is configured to sense current flowing in the second switch. A controller configured to control the first switch and the second switch, wherein the controller is configured to control the first switch and the second switch independently of a difference between the input voltage and an output voltage and in addition in accordance with the current sensed by the current sensor.

Abstract: A semiconductor device includes a lead frame, a transistor, and an encapsulation resin. The lead frame includes a drain frame, a source frame, and a gate frame. The drain frame includes drain frame fingers. The source frame includes source frame fingers. The drain frame fingers and the source frame fingers are alternately arranged in a first direction and include overlapping portions as viewed from a first direction. In a region where each drain frame finger overlaps the source frame fingers as viewed in the first direction, at least either one of the drain frame fingers and the source frame fingers are not exposed from the back surface of the encapsulation resin.

Abstract: An electrode structure includes: an indium tin oxide (ITO) electrode that includes ITO; an Al electrode that includes Al and covers the ITO electrode; and a barrier electrode that includes at least one of TiN and Cr and is interposed in a region between the ITO electrode and the Al electrode.

Abstract: The semiconductor device has the CSP structure and may include a plurality of electrode pads formed on a semiconductor integrated circuit in order to input/output signals from/to exterior; solder bumps for making external lead electrodes; and rewiring. The solder bumps may be arranged in two rows along the periphery of the semiconductor device. The electrode pads may be arranged inside the outermost solder bumps so as to be interposed between the two rows of solder bumps. Each trace of the rewiring may be extended from an electrode pad and may be connected to any one of the outermost solder bumps or any one of the inner solder bumps.

Abstract: A semiconductor device includes first and second semiconductor elements, and first and second circuits at different potentials. The second semiconductor element, electrically connected to the first semiconductor element, relays mutual signals between the first and the second circuits, while insulating them. The semiconductor device further includes a first terminal lead electrically connected to the first semiconductor element, a first wire connected to the first and the second semiconductor elements, and a second wire connected to the first semiconductor element and the first terminal lead. The first wire contains a first metal. The second wire includes a first core containing a second metal, and a first surface layer containing a third metal and covering the first core. The second metal has a smaller atomic number than that of the first metal. The third metal has a greater bonding strength with respect to the first terminal lead than the second metal.

Abstract: An acceleration sensor includes a semiconductor substrate that has a cavity formed in an interior, a fixed structure that includes a fixed electrode supported by the semiconductor substrate in a state of floating with respect to the cavity, and a movable structure that includes a movable electrode supported by the semiconductor substrate via an elastic structure in a state of floating with respect to the cavity and displacing with respect to the fixed electrode. The elastic structure includes a first end portion supported by the semiconductor substrate, a second end portion connected to the movable structure, and an intermediate portion connecting the first end portion and the second end portion and has a rectilinearly-extending rectilinear portion at least at a portion of the intermediate portion and the rectilinear portion includes a plurality of rectilinear frames extending in parallel to each other in a direction in which the rectilinear portion extends.

Abstract: A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.

Abstract: Provided is a Hall element that detects a magnetic field. The Hall element includes a substrate including a semiconductor region, a first drive electrode arranged on the substrate, a first ground electrode arranged on the substrate separately from the first drive electrode in a first direction, a second ground electrode arranged on the substrate separately from the first drive electrode in a second direction different from the first direction, and a detection electrode group including a first electrode group that detects a Hall voltage generated by a current of components perpendicular to a surface of the substrate, the current flowing from the first drive electrode to the first ground electrode and the second ground electrode.

Abstract: A terahertz device includes a terahertz element, a sealing resin, a wiring layer and a frame-shaped member. The terahertz element that performs conversion between terahertz waves and electric energy. The terahertz element has an element front surface and an element back surface spaced apart from each other in a first direction. The sealing resin covers the terahertz element. The wiring layer is electrically connected to the terahertz element. A frame-shaped member is made of a conductive material and arranged around the terahertz element as viewed in the first direction. The frame-shaped member has a reflective surface capable of reflecting the terahertz waves.

Abstract: A semiconductor device includes a semiconductor layer that has a main surface, an electrode pad that is formed on the main surface, a rewiring that has a first wiring surface connected to the electrode pad and a second wiring surface positioned on a side opposite to the first wiring surface and being roughened, the rewiring being formed on the main surface such as to be drawn out to a region outside the electrode pad, and a resin that covers the second wiring surface on the main surface and that seals the rewiring.

Abstract: A frequency characteristic measurement apparatus includes a calibration circuit configured to perform a SOLT calibration on cable end surfaces, a first measurement circuit measuring S-parameters of a first substrate provided with a DUT, after the SOLT calibration by the calibration circuit, a second measurement circuit measuring S-parameters of a second substrate after the SOLT calibration by the calibration circuit, and an extraction circuit performing a vector operation of a measurement result of the first measurement circuit and a measurement result of the second measurement circuit to extract S-parameters of the DUT. The extraction circuit assumes that a reflection of each of first second fixtures obtained by virtually dividing the second substrate into two parts at the center, on an end surface of the second substrate is equal to or smaller than a reflection on an end surface of the second substrate without the virtual division at the center.