Patents Assigned to ROHM Co., Ltd.
  • Patent number: 11863068
    Abstract: A driving device comprises a first transistor (B13), a second transistor (B14), and a resistance element. The first transistor (B13) has one terminal receiving a pulsed current and a control terminal connected to the one terminal. The second transistor (B14) has one terminal connected to at least one load, the other terminal connected to a reference potential together with the other terminal of the first transistor (B13), and a control terminal connected to the control terminal of the first transistor (B13). The resistance element is connected between the control terminal of the first transistor (B13) and the other terminal of the first transistor (B13).
    Type: Grant
    Filed: August 24, 2021
    Date of Patent: January 2, 2024
    Assignee: Rohm Co., Ltd.
    Inventors: Shinji Kawata, Yoichi Kajiwara
  • Patent number: 11862740
    Abstract: In an illuminance sensor, a slow axis of a first portion comprises a relation of +45° or ?45° in regard to a first polarization direction that is a polarization direction of the a linear polarization plate, a relation of a slow axis of a second portion in regard to the first polarization direction is ?45° or +45° that is opposite in sign to the relation of the slow axis of the first portion in regard to the first polarization direction, and a slow axis of a second quarter-wave plate comprises a relation of +45° or ?45° in regard to a second polarization direction that is a polarization direction of a second linear polarization plate, wherein the relation of the slow axis of the second quarter-wave plate in regard to the second polarization direction is the same with the relation of the slow axis of the first portion in regard to the first polarization direction.
    Type: Grant
    Filed: December 15, 2022
    Date of Patent: January 2, 2024
    Assignee: ROHM CO., LTD.
    Inventor: Yoshitsugu Uedaira
  • Patent number: 11862598
    Abstract: There is provided a semiconductor device including: a semiconductor element; a support substrate configured to support the semiconductor element; an intermediate metal layer interposed between the semiconductor element and the support substrate in a thickness direction of the support substrate, wherein the semiconductor element and the intermediate metal layer are bonded by solid phase diffusion bonding; and a first positioning portion including a portion of the semiconductor element and a first portion of the intermediate metal layer and configured to suppress relative movement between the semiconductor element and the intermediate metal layer.
    Type: Grant
    Filed: October 6, 2021
    Date of Patent: January 2, 2024
    Assignee: ROHM CO., LTD.
    Inventor: Katsuhiko Yoshihara
  • Patent number: 11864282
    Abstract: The present disclosure provides a light emitting element driving device. The light emitting element driving device includes a constant current circuit and a current detection unit. The constant current circuit includes: a first transistor including a first end, a second end and a control end connected to an external terminal; a current setting resistance connected to the second end of the first transistor; and a drive amplifier including a first input end connected to a first node to which the first transistor and the current setting resistance are connected, a second input end to which a current set voltage is applied, and an output end connected to the control end of the first transistor. The current detection unit generates a current detection signal based on a feedback voltage generated in the first node.
    Type: Grant
    Filed: August 19, 2022
    Date of Patent: January 2, 2024
    Assignee: Rohm Co., Ltd.
    Inventors: Makoto Suyama, Koji Katsura, Toshiro Okubo
  • Publication number: 20230420324
    Abstract: An outer peripheral region of this semiconductor device comprises: a guard ring; an insulating film and an intermediate insulating film that cover a surface of the guard ring; a field plate; a passivation film provided so as to cover both the insulating film and the field plate; and a barrier layer that has a smaller diffusion coefficient than the insulating film and the intermediate insulating film, and than the passivation film. The field plate includes a first section provided within an opening in the insulating film and the intermediate insulating film, and a second section having a protrusion that protrudes outward beyond the first section. The barrier layer has a section that is inserted between the protrusion and the guard ring.
    Type: Application
    Filed: September 12, 2023
    Publication date: December 28, 2023
    Applicant: ROHM CO., LTD.
    Inventors: Takayuki OSAWA, Takeshi OKAMOTO
  • Publication number: 20230420454
    Abstract: This semiconductor device is provided with: a semiconductor layer; an insulating film which is formed on the surface of the semiconductor layer; a main cell region which comprises a main cell, while being provided in the semiconductor layer; and a temperature-sensing diode for sensing the temperature, the diode being provided in a region other than the main cell region. The temperature-sensing diode comprises a diode cell which is composed of: a first semiconductor region of a first conductivity type; and a second semiconductor region of a second conductivity type. The second semiconductor region is formed into a ring shape so as to surround the first semiconductor region. The inner lateral surface of the second semiconductor region is joined with the first semiconductor region.
    Type: Application
    Filed: September 13, 2023
    Publication date: December 28, 2023
    Applicant: ROHM CO., LTD.
    Inventor: Takayuki OSAWA
  • Publication number: 20230420517
    Abstract: A nitride semiconductor device includes a source electrode that is in contact with a second nitride semiconductor layer via a first opening portion and with which a portion is formed above a passivation film and a drain electrode that is in contact with the second nitride semiconductor layer via a second opening portion and with which a portion is formed above the passivation film such as to oppose the source electrode across a ridge portion, and the third nitride semiconductor layer has, between a ridge portion side end of the first opening portion and a first opening portion end of the ridge portion and/or between a ridge portion side end of the drain electrode and a second opening portion end of the ridge portion, an extension portion that extends outward from a portion below a thickness intermediate position of at least one side surface of the ridge portion.
    Type: Application
    Filed: October 7, 2021
    Publication date: December 28, 2023
    Applicant: ROHM CO., LTD.
    Inventors: Hirotaka OTAKE, Manabu YANAGIHARA, Kazuya NAGASE, Shinya TAKADO
  • Publication number: 20230421073
    Abstract: A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.
    Type: Application
    Filed: September 8, 2023
    Publication date: December 28, 2023
    Applicant: ROHM CO., LTD.
    Inventors: Yuki NAKANO, Hiroyuki SAKAIRI
  • Publication number: 20230420446
    Abstract: A semiconductor device includes a semiconductor layer having a principal surface, a first-conductivity-type well region formed at a surface layer portion of the principal surface of the semiconductor layer, a first-conductivity-type first impurity region that is formed at a surface layer portion of the well region and that has an inner wall portion, and a second-conductivity-type annular second impurity region formed at the surface layer portion of the well region on a more inward side than the inner wall portion such that a pn junction portion is formed between the well region and the second impurity region.
    Type: Application
    Filed: October 21, 2021
    Publication date: December 28, 2023
    Applicant: ROHM CO., LTD.
    Inventor: Kenichi YOSHIMURA
  • Publication number: 20230417613
    Abstract: A pressure sensor includes: a substrate having first and second main surfaces and having a thickness in first direction; a first chamber recessed from the first main surface in the first direction with respect to the substrate; a second chamber recessed from the first main surface in the first direction with respect to the substrate and adjacent to the first chamber in second direction; a fluid passage recessed from the first main surface in the first direction with respect to the substrate and causing the first chamber to be in fluid communication with an outside; a closing layer laminated on the first main surface of the substrate and closing openings of the first chamber and the second chamber; and a membrane partitioned by the first and second chambers in the second direction and extending in a plane parallel to the first direction and a third direction.
    Type: Application
    Filed: June 20, 2023
    Publication date: December 28, 2023
    Applicant: ROHM CO., LTD.
    Inventors: Martin Wilfried HELLER, Toma FUJITA
  • Publication number: 20230421072
    Abstract: A rectifier includes a first transistor of a drain/source common field effect type and a second transistor of a drain/source common field effect type in which the second transistor is diode-connected to the first transistor so as to allow the first transistor to perform a diode operation, and configures a rectifier stage with the first transistor.
    Type: Application
    Filed: June 8, 2023
    Publication date: December 28, 2023
    Applicant: ROHM CO., LTD.
    Inventors: Satoki TANIGUCHI, Kentaro NASU
  • Patent number: 11850870
    Abstract: The present disclosure provides a thermal print head. The thermal print head includes a substrate having a main surface and a convex portion and including a semiconductor material; a resistor layer including a plurality of heat generating portions located on the convex portion; and a wiring layer conducted to the plurality of heat generating portions and formed to contact the resistor layer. The convex portion has a top surface, a first inclined surface and a second inclined surface. The first inclined surface and the second inclined surface are disposed between the main surface and the top surface, separated from each other in a sub-scanning direction, and tilted with respect to the main surface. A first tilted angle of the first inclined surface with respect to the main surface and a second tilted angle of the second inclined surface with respect to the main surface are greater than 55 degrees.
    Type: Grant
    Filed: June 21, 2022
    Date of Patent: December 26, 2023
    Assignee: ROHM CO., LTD.
    Inventor: Goro Nakatani
  • Patent number: 11854513
    Abstract: A video input interface receives video data on which a known character is to be drawn. A memory stores reference graphic data describing the known character. A visibility detector checks the visibility of the known character drawn on the video data based on the reference graphic data.
    Type: Grant
    Filed: September 29, 2021
    Date of Patent: December 26, 2023
    Assignee: ROHM CO., LTD.
    Inventor: Hiroharu Endo
  • Patent number: 11854937
    Abstract: A power module apparatus includes a power module having a package configured to seal a perimeter of a semiconductor device, and a heat radiator bonded to one surface of the package; a cooling device having a coolant passage through which coolant water flows, in which the heat radiator is attached to an opening provided on a way of the coolant passage, wherein the heat radiator of the power module is attached to the opening of the cooling device so that a height (ha) and a height (hb) are substantially identical to each other. The power module in which the heat radiator is attached to the opening formed at the upper surface portion of the cooling device can also be efficiently cooled, and thereby it becomes possible to reduce degradation due to overheating.
    Type: Grant
    Filed: December 7, 2020
    Date of Patent: December 26, 2023
    Assignee: ROHM CO., LTD.
    Inventors: Katsuhiko Yoshihara, Masao Saito
  • Patent number: 11856759
    Abstract: A semiconductor device includes: a semiconductor layer having a main surface; a first conductive type well region formed on a surface portion of the main surface of the semiconductor layer; a second conductive type source region formed on a surface portion of the well region; a second conductive type drain region formed on the surface portion of the well region at an interval from the source region; a planar gate structure formed on the main surface of the semiconductor layer so as to face a first conductive type channel region disposed between the source region and the drain region; and a memory structure disposed adjacent to a lateral side of the planar gate structure, and including an insulating film formed on the channel region and a charge storage film facing the channel region with the insulating film interposed between the charge storage film and the channel region.
    Type: Grant
    Filed: May 25, 2021
    Date of Patent: December 26, 2023
    Assignee: ROHM CO., LTD.
    Inventors: Yushi Sekiguchi, Yasunobu Hayashi, Tadayuki Yamazaki
  • Patent number: 11854923
    Abstract: A semiconductor device includes a semiconductor element, first and second leads, and a sealing resin. The semiconductor element includes first and second electrodes. The first lead includes a mounting base having a main face to which the first electrode is bonded and a back face, and includes a first terminal connected to the first electrode. The second lead includes a second terminal connected to the second electrode. The sealing resin includes a main face and a back face opposite to each other, and includes an end face oriented in the protruding direction of the terminals. The back face of the mounting base is exposed from the back face of the resin. The sealing resin includes a groove formed in its back face and disposed between the back face of the mounting base and a boundary between the second terminal and the end face of the resin.
    Type: Grant
    Filed: October 5, 2022
    Date of Patent: December 26, 2023
    Assignee: ROHM CO., LTD.
    Inventor: Koshun Saito
  • Patent number: 11850953
    Abstract: In a drive unit, a motor and an inverter having power modules are disposed adjacent in an axial direction of the motor. In the motor, first and second coil groups, each including one U-phase coil, one V-phase coil, and one W-phase coil, are provided. The power modules constitute first and second power module groups that are connected in parallel. The first and second power module groups each include one U-phase power module, one V-phase power module, and one W-phase power module. A distance between the U-phase power module of the first power module group and the U-phase coil of the first coil group, a distance between the V-phase power module of the first power module group and the V-phase coil of the first coil group, and a distance between the W-phase power module of the first power module group and the W-phase coil of the first coil group are equal.
    Type: Grant
    Filed: October 20, 2022
    Date of Patent: December 26, 2023
    Assignees: MAZDA MOTOR CORPORATION, ROHM CO., LTD
    Inventors: Takayuki Sato, Masashi Hayashiguchi
  • Patent number: 11853139
    Abstract: A semiconductor device includes a clock terminal to and from which a clock is allowed to be input and output, and a data terminal to and from which data is allowed to be input and output. In the semiconductor device, the data synchronized with the clock that is input to the clock terminal or is output from the clock terminal is output from the data terminal, and when the clock is output from the clock terminal, the clock is output irrespective of whether or not data transfer of the data is being executed.
    Type: Grant
    Filed: January 6, 2021
    Date of Patent: December 26, 2023
    Assignee: ROHM CO., LTD.
    Inventor: Kiminobu Sato
  • Publication number: 20230410574
    Abstract: A self-diagnosis apparatus has: a self-diagnosis control unit that outputs a predetermined self-diagnosis information to an information output unit; an information detection unit that detects output information outputted from the information output unit in accordance with the self-diagnosis information, and outputs a result of the detection as detection information; and abnormality judgment unit that compares the self-diagnosis information and the detection information during a predetermined synchronization window period, and in a case where difference information of a result of the comparison exceeds a predetermined range information, judges that there is abnormality in the information output unit and outputs abnormality information.
    Type: Application
    Filed: August 29, 2023
    Publication date: December 21, 2023
    Applicant: ROHM CO., LTD.
    Inventor: Takashi NAIKI
  • Patent number: D1009818
    Type: Grant
    Filed: April 8, 2022
    Date of Patent: January 2, 2024
    Assignee: ROHM CO., LTD.
    Inventor: Tsunehisa Ono