Abstract: A semiconductor device and a manufacturing method of the semiconductor device by which peeling off of a sealing resin and a wire from each other can be practically suppressed are disclosed. The semiconductor device includes a substrate, a main face wire, a semiconductor element that is conductive to the main face wire, a sealing resin having resin side faces directed in a direction crossing a thickness direction, the sealing resin sealing the main face wire and the semiconductor element, a through-wire that is conductive to the main face wire and having an exposed rear face exposed from the substrate, and a column conductor that is conductive to the main face wire and having an exposed side face exposed from the resin side faces. The column conductor is supported from the opposite sides thereof in the thickness direction by the substrate and the sealing resin.

Abstract: This semiconductor device is provided with: a semiconductor layer; a cell that is provided on the semiconductor layer; an insulating film that covers the cell; a main electrode part that is superposed on the insulating film; a temperature-sensitive diode for sensing temperatures, the diode having a first electrode and a second electrode; and a connection electrode for diode, the connection electrode being used for the purpose of connecting the first electrode to the outside. The main electrode part has: a first bonding region to which a first conductive member is bonded; and a second bonding region to which a second conductive member is bonded. When viewed from the thickness direction of the semiconductor layer, the cell is provided on both a first semiconductor region in the semiconductor layer, and a second semiconductor region in the semiconductor layer.

Abstract: This semiconductor device includes: an n-type drift layer; a p-type base region; a trench extending in the depth direction so as to pass through the base region and reach the drift layer; an insulating film formed on an inner surface of the trench; a gate trench surrounding the insulating film; and a p-type column region provided on the drift layer at a position at the bottom of the trench. The drift layer includes: a first region having a first concentration peak; and a second region that is provided at a position deeper than the trench and corresponding to the column region, and has a second concentration peak lower than the first concentration peak.

Abstract: A semiconductor device includes a semiconductor layer having a first face with a trench formed thereon and a second face opposite to the first face, a gate electrode, and a gate insulating layer. The semiconductor layer includes a first n-type semiconductor layer, a second n-type semiconductor layer, a p-type semiconductor layer, and an n-type semiconductor region. The trench is formed to penetrate through the p-type semiconductor layer and to reach the second n-type semiconductor layer. The p-type semiconductor layer includes an extended portion extending to a position closer to the second face of the semiconductor layer than the trench is. Such structure allows suppressing dielectric breakdown in the gate insulating layer.

Abstract: A surface-emitting laser device includes a first-conductivity type substrate including a first main surface on one side and a second main surface on an opposite side, a first-conductivity type reflection layer laminated on the first main surface so as to be lower in concentration than the substrate, a first-conductivity type clad layer laminated on the reflection layer so as to be higher in concentration than the reflection layer, an active layer laminated on the clad layer, a second-conductivity type semiconductor layer laminated on the active layer, a first removal portion that is formed by digging down the semiconductor layer and the active layer so as to expose the clad layer and that demarcates a mesa structure having a plateau shape, a second removal portion that is formed by digging down the clad layer and the reflection layer from a bottom portion of the first removal portion so as to expose the substrate from a position distant from the mesa structure, and a bypass wiring that is electrically connect

Abstract: A piezoelectric element unit includes: a substrate having a main surface; a piezoelectric film arranged on the substrate and having a first side surface, a second side surface opposite the first side surface, and a bottom surface that faces the main surface and is connected to the first side surface and the second side surface; a first electrode arranged on the substrate and in contact with the first side surface of the piezoelectric film; and a second electrode arranged on the substrate in contact with at least one of the first side surface and the second side surface of the piezoelectric film, and provided to be separated from the first electrode.

Abstract: A driving device comprises a first transistor (B13), a second transistor (B14), and a resistance element. The first transistor (B13) has one terminal receiving a pulsed current and a control terminal connected to the one terminal. The second transistor (B14) has one terminal connected to at least one load, the other terminal connected to a reference potential together with the other terminal of the first transistor (B13), and a control terminal connected to the control terminal of the first transistor (B13). The resistance element is connected between the control terminal of the first transistor (B13) and the other terminal of the first transistor (B13).

Abstract: [Object] To provide a semiconductor device capable of improving a discharge starting voltage when measuring electric characteristics, and widening a pad area of a surface electrode or increasing the number of semiconductor devices (number of chips) to be obtained from one wafer, and a method for manufacturing the same. [Solution Means] A semiconductor device 1 includes an n-type SiC layer 2 having a first surface 2A, a second surface 2B, and end faces 2C, a p-type voltage relaxing layer 7 formed in the SiC layer 2 so as to be exposed to the end portion of the first surface 2A of the SiC layer 2, an insulating layer 8 formed on the SiC layer 2 so as to cover the voltage relaxing layer 7, and an anode electrode 9 that is connected to the first surface 2A of the SiC layer 2 through the insulating layer 8 and has a pad area 95 selectively exposed.

Abstract: In an illuminance sensor, a slow axis of a first portion comprises a relation of +45° or ?45° in regard to a first polarization direction that is a polarization direction of the a linear polarization plate, a relation of a slow axis of a second portion in regard to the first polarization direction is ?45° or +45° that is opposite in sign to the relation of the slow axis of the first portion in regard to the first polarization direction, and a slow axis of a second quarter-wave plate comprises a relation of +45° or ?45° in regard to a second polarization direction that is a polarization direction of a second linear polarization plate, wherein the relation of the slow axis of the second quarter-wave plate in regard to the second polarization direction is the same with the relation of the slow axis of the first portion in regard to the first polarization direction.

Abstract: There is provided a semiconductor device including: a semiconductor element; a support substrate configured to support the semiconductor element; an intermediate metal layer interposed between the semiconductor element and the support substrate in a thickness direction of the support substrate, wherein the semiconductor element and the intermediate metal layer are bonded by solid phase diffusion bonding; and a first positioning portion including a portion of the semiconductor element and a first portion of the intermediate metal layer and configured to suppress relative movement between the semiconductor element and the intermediate metal layer.

Abstract: The present disclosure provides a light emitting element driving device. The light emitting element driving device includes a constant current circuit and a current detection unit. The constant current circuit includes: a first transistor including a first end, a second end and a control end connected to an external terminal; a current setting resistance connected to the second end of the first transistor; and a drive amplifier including a first input end connected to a first node to which the first transistor and the current setting resistance are connected, a second input end to which a current set voltage is applied, and an output end connected to the control end of the first transistor. The current detection unit generates a current detection signal based on a feedback voltage generated in the first node.

Abstract: An outer peripheral region of this semiconductor device comprises: a guard ring; an insulating film and an intermediate insulating film that cover a surface of the guard ring; a field plate; a passivation film provided so as to cover both the insulating film and the field plate; and a barrier layer that has a smaller diffusion coefficient than the insulating film and the intermediate insulating film, and than the passivation film. The field plate includes a first section provided within an opening in the insulating film and the intermediate insulating film, and a second section having a protrusion that protrudes outward beyond the first section. The barrier layer has a section that is inserted between the protrusion and the guard ring.

Abstract: This semiconductor device is provided with: a semiconductor layer; an insulating film which is formed on the surface of the semiconductor layer; a main cell region which comprises a main cell, while being provided in the semiconductor layer; and a temperature-sensing diode for sensing the temperature, the diode being provided in a region other than the main cell region. The temperature-sensing diode comprises a diode cell which is composed of: a first semiconductor region of a first conductivity type; and a second semiconductor region of a second conductivity type. The second semiconductor region is formed into a ring shape so as to surround the first semiconductor region. The inner lateral surface of the second semiconductor region is joined with the first semiconductor region.

Abstract: A nitride semiconductor device includes a source electrode that is in contact with a second nitride semiconductor layer via a first opening portion and with which a portion is formed above a passivation film and a drain electrode that is in contact with the second nitride semiconductor layer via a second opening portion and with which a portion is formed above the passivation film such as to oppose the source electrode across a ridge portion, and the third nitride semiconductor layer has, between a ridge portion side end of the first opening portion and a first opening portion end of the ridge portion and/or between a ridge portion side end of the drain electrode and a second opening portion end of the ridge portion, an extension portion that extends outward from a portion below a thickness intermediate position of at least one side surface of the ridge portion.

Abstract: A semiconductor device includes a semiconductor layer having a principal surface, a first-conductivity-type well region formed at a surface layer portion of the principal surface of the semiconductor layer, a first-conductivity-type first impurity region that is formed at a surface layer portion of the well region and that has an inner wall portion, and a second-conductivity-type annular second impurity region formed at the surface layer portion of the well region on a more inward side than the inner wall portion such that a pn junction portion is formed between the well region and the second impurity region.

Abstract: A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.

Abstract: A pressure sensor includes: a substrate having first and second main surfaces and having a thickness in first direction; a first chamber recessed from the first main surface in the first direction with respect to the substrate; a second chamber recessed from the first main surface in the first direction with respect to the substrate and adjacent to the first chamber in second direction; a fluid passage recessed from the first main surface in the first direction with respect to the substrate and causing the first chamber to be in fluid communication with an outside; a closing layer laminated on the first main surface of the substrate and closing openings of the first chamber and the second chamber; and a membrane partitioned by the first and second chambers in the second direction and extending in a plane parallel to the first direction and a third direction.

Abstract: A rectifier includes a first transistor of a drain/source common field effect type and a second transistor of a drain/source common field effect type in which the second transistor is diode-connected to the first transistor so as to allow the first transistor to perform a diode operation, and configures a rectifier stage with the first transistor.