Abstract: A method for performing table management of a memory device in predetermined communications architecture with aid of system-region garbage collection (GC) and associated apparatus are provided. The method may include: utilizing the memory controller to perform a system-region GC procedure to manage at least one table regarding internal management of the memory device. The system-region GC procedure may include: reading a set of first table contents from a set of first table pages; and writing the set of first table contents into a set of first system-region-GC-processed table pages of the at least one table block, and writing a first RAID parity of the set of first table contents into a first parity page corresponding to the set of first system-region-GC-processed table pages in the at least one table block, in order to generate a first system-region-GC-processed table RAID protection group, for protecting the set of first system-region-GC-processed table pages.
Abstract: An interface circuit includes multiple signal processing devices and a monitor and calibration module including multiple monitoring circuits, multiple calibration circuits and a compensation control mechanism operation logic. The monitoring circuits monitor a reception signal, a transmission signal, a power supplying voltage and a ground voltage to correspondingly generate monitored results. The calibration circuits perform a calibration operation on at least one signal processing device to adjust a characteristic value of the signal processing device.
Abstract: An interface circuit includes a signal processing circuit including multiple signal processing devices and a monitor and calibration module. The monitor and calibration module includes multiple monitor circuits, a processor and a calibration circuit. The monitor circuits monitor at least one of an amplitude, a frequency and a jitter in at least one of a reception signal and a transmission signal to correspondingly generate a monitored result and monitor at least one of power supplying voltage and ground voltage to correspondingly generate a monitored result. The processor collects the monitored results and determines a calibration operation based on the monitored results. The calibration circuit is coupled to the processor and at least one signal processing device and performs the calibration operation on the signal processing device to adjust a characteristic value of the signal processing device.
Abstract: An interface circuit includes multiple signal processing devices and a monitor and calibration module. The monitor and calibration module includes multiple monitor circuits, multiple calibration circuits, a compensation accelerator and a processor. The monitor circuits monitor at least one of an amplitude, a frequency and jitter in at least one of a reception signal and a transmission signal to correspondingly generate a monitored result and monitor at least one of power supplying voltage and ground voltage to correspondingly generate a monitored result. The compensation accelerator collects the monitored results and generates a calibration control signal corresponding to each calibration circuit according to calibration commands. The processor generates the calibration commands based on the monitored results.
Abstract: An interface circuit includes multiple signal processing devices and a monitor and calibration module including multiple monitoring circuits, multiple calibration circuits and a compensation control mechanism operation logic. The monitoring circuits monitor a reception signal, a transmission signal, a power supplying voltage and a ground voltage to correspondingly generate monitored results. The calibration circuits perform a calibration operation on at least one signal processing device to adjust a characteristic value of the signal processing device. The compensation control mechanism operation logic generates a calibration control signal to control the calibration operation of the calibration circuits based on the monitored results.
Abstract: A memory controller includes an error correction code engine, a buffer memory and a microprocessor. In response to a first decoding result of predetermined data, the microprocessor performs a repeated read operation on a memory device to obtain multiple read results of a data chunk having the predetermined data. The data chunk includes multiple bits. The microprocessor further performs a data reconstruction and error correction procedure according to the read results of the data chunk. In an operation of data reconstruction, the microprocessor determines a bit value corresponding to each bit in the data chunk according to the read results of the data chunk to generate a reconstructed data chunk. In an operation of error correction, the microprocessor provides the reconstructed data chunk to the error correction code engine to obtain a second decoding result of the predetermined data.
Abstract: A method for accessing a flash memory module includes: determining a type of data to be written into the flash memory module; selecting a specific encoding/decoding setting from a plurality of sets of encoding/decoding settings at least according to the type of data, wherein the plurality of sets of encoding/decoding settings correspond to different data lengths, respectively; utilizing the specific encoding/decoding setting to encode the data to generate encoded data; and writing the encoded data into a block of the flash memory module.
Type:
Grant
Filed:
November 24, 2022
Date of Patent:
July 16, 2024
Assignee:
Silicon Motion, Inc.
Inventors:
Chia-Chi Liang, Hsiao-Chang Yen, Tsu-Han Lu
Abstract: A method for performing access management in a memory device, the associated memory device and the controller thereof, and the associated electronic device are provided. The method may include: receiving a host command and a logical address from a host device; performing at least one checking operation to obtain at least one checking result, for determining whether to load a logical-to-physical (L2P) table from the NV memory to a random access memory (RAM) of the memory device, wherein the L2P table includes address mapping information for accessing the target data, and performing the at least one checking operation to obtain at least one checking result includes checking whether a first L2P-table index pointing toward the L2P table and a second L2P-table index sent from the host device are equivalent to each other; and reading the target data from the NV memory, and sending the target data to the host device.
Abstract: A flash memory controller to be used in a storage device and coupled to a flash memory device of the storage device through a specific communication interface. The flash memory controller sends an error injection set-feature signal to the flash memory device through the specific communication interface to configure an operation of a debug circuit of the flash memory device to make the debug circuit automatically generate debug information of an access operation of an access command signal sent from the flash memory controller, transmit the generated debug information from the flash memory device to the flash memory controller via the I/O control circuit and the specific communication interface, with actually controlling a memory cell array of flash memory device generating failure errors.
Abstract: A flash memory controller to be used in a storage device and coupled to a flash memory device of the storage device through a specific communication interface. The flash memory controller sends a debug injection command signal to the flash memory device through the specific communication interface to configure an operation of a debug circuit of the flash memory device to make the debug circuit automatically generate debug information of an access operation of the debug injection command signal sent from the flash memory controller, transmit the generated debug information from the flash memory device to the flash memory controller via the I/O control circuit and the specific communication interface, without controlling a memory cell array of flash memory device generating errors.
Abstract: A method for performing data access management of a memory device in a predetermined communications architecture with aid of unbalanced table regions and associated apparatus are provided.
Abstract: A method for performing data access management of a memory device in a predetermined communications architecture with aid of unbalanced table search and associated apparatus are provided. The method may include: utilizing a memory controller to receive a plurality of host commands from a host device through a transmission interface circuit of the memory controller, perform the unbalanced table search to receive a set of first data and a set of second data with first and second active blocks according to first and second commands among the host commands, respectively, and update first and second temporary physical-to-logical (P2L) address mapping tables; and selectively updating a first P2L address mapping table and a second P2L address mapping table according to the first temporary P2L address mapping table and the second temporary P2L address mapping table, respectively, for performing subsequent processing.
Abstract: A method for performing access management of a memory device in a predetermined communications architecture with aid of automatic parameter setting and associated apparatus are provided. The method may include: utilizing the memory controller to set at least one write booster static parameter of a write booster function of the memory device; utilizing the memory controller to perform device initialization corresponding to at least one initialization phase of the memory device; and after completing the device initialization corresponding to the at least one initialization phase, performing at least one flag-setting operation, for setting at least one write booster flag among a plurality of write booster flags of the write booster function, wherein the at least one write booster flag includes a first write booster flag acting as a write booster switch. The adaptive flag-setting operation includes setting the first write booster flag to enable the write booster function by default.
Abstract: A method for performing data access management of a memory device in a predetermined communications architecture with aid of unbalanced table update and associated apparatus are provided. The method may include: utilizing a memory controller to receive a plurality of host commands from a host device through a transmission interface circuit of the memory controller, receive a set of first data and a set of second data with first and second active blocks according to first and second commands among the host commands, respectively, and update first and second temporary physical-to-logical (P2L) address mapping tables; and in response to a table region of any temporary P2L address mapping table being full, updating a first P2L address mapping table according to the first temporary P2L address mapping table and selectively updating a second P2L address mapping table according to the second temporary P2L address mapping table, for performing subsequent processing.
Abstract: A flash memory controller to be used in a storage device and coupled to a flash memory device of the storage device through a specific communication interface. The flash memory controller sends an error injection access command signal to the flash memory device through the specific communication interface to configure an operation of a debug circuit of the flash memory device to make the debug circuit automatically generate debug information of an access operation of the error injection access command signal sent from the flash memory controller, transmit the generated debug information from the flash memory device to the flash memory controller via the I/O control circuit and the specific communication interface, with controlling a memory cell array of flash memory device generating failure errors.
Abstract: A flash memory controller to be used in a storage device and coupled to a flash memory device of the storage device through a specific communication interface. The flash memory controller sends a debug injection set-feature signal to the flash memory device through the specific communication interface to configure an operation of a debug circuit of the flash memory device to make the debug circuit automatically generate debug information of an access operation of an access command signal sent from the flash memory controller, transmit the generated debug information from the flash memory device to the flash memory controller via the I/O control circuit and the specific communication interface, without controlling a memory cell array of flash memory device generating errors.
Abstract: A method for performing configuration management of a memory device in predetermined communications architecture with aid of electronic fuse (eFuse) data preparation, associated apparatus and computer-readable medium are provided. The method may include: utilizing a memory controller to receive a first command from a host device through a transmission interface circuit of the memory controller; utilizing the memory controller to execute at least one procedure regarding MP initialization of the memory device, for example, operations of a first procedure among the at least one procedure may include obtaining eFuse information from an eFuse circuit, preparing protected eFuse data according to the eFuse information, and storing the protected eFuse data into a non-volatile (NV) memory; and utilizing the memory controller to send a first response to the host device through the transmission interface circuit, wherein the first response is sent to the host device in response to the first command.
Abstract: A method for performing configuration management of a memory device in predetermined communications architecture with aid of electronic fuse (eFuse) data preparation, associated apparatus and computer-readable medium are provided. The method may include: utilizing a memory controller to receive a first command from a host device through a transmission interface circuit of the memory controller; utilizing the memory controller to execute at least one procedure regarding MP initialization of the memory device, for example, operations of a first procedure among the at least one procedure may include obtaining eFuse information from an eFuse circuit, preparing protected eFuse data according to the eFuse information, and storing the protected eFuse data into a non-volatile (NV) memory; and utilizing the memory controller to send a first response to the host device through the transmission interface circuit, wherein the first response is sent to the host device in response to the first command.
Abstract: An interface circuit includes a signal processing circuit configured to process a reception signal received from a host device and a transmission signal to be transmitted to the host device. The signal processing circuit includes multiple signal processing devices and a calibration device. The calibration device is coupled to the signal processing devices and configured to sequentially calibrate a characteristic value of each signal processing device in a calibration procedure.
Abstract: A data recovery method for a flash memory includes: during a first programming pass, programming a memory cell of the flash memory to a specific charge state, thereby to store middle page data and lower page data into the memory cell; reading the memory cell to back up one of the middle page data and the lower page data stored in the memory cell to another memory cell in the flash memory; upon detecting an error during or after a second programming pass, based on a current voltage of the memory cell and the backed-up one of the middle page data and the lower page data from the another memory cell of the flash memory, recovering the middle page data and the lower page data of the memory cell; and writing back the recovered middle page data and the recovered lower page data to the flash memory.