Abstract: A semiconductor device includes a leadframe that includes contact pins and a semiconductor die that has protruding connection formations. A flexible support member is disposed between the leadframe and the semiconductor die and supports the semiconductor die. The flexible support member has electrically conductive lines that extend between the leadframe and the semiconductor die. The electrically conductive lines of the flexible support member are electrically coupled with the contact pins of the leadframe and with the connection formations of the semiconductor die.

Abstract: Data weighted averaging of a thermometric coded input signal is accomplished by controlling the operation of a crossbar switch matrix to generate a current cycle of a data weighted averaging output signal using a control signal generated in response to feedback of a previous cycle of the data weighted averaging output signal. The control signal specifies a bit location for a beginning logic transition of the data weighted averaging output signal in the current cycle based on detection of an ending logic transition of the data weighted averaging output signal in the previous cycle.

Abstract: A polyphase decimation FIR filter apparatus including a modulo integrator circuit configured to integrate input samples and to provide integrated input samples; and a polyphase FIR filter circuit configured to process the integrated input samples, the polyphase FIR filter circuit including a plurality of multiplier accumulator circuits, each configured to accumulate products of coefficients and respective integrated signal samples, wherein each of the multiplier accumulator circuits receives a subset of FIR filter coefficients, wherein the FIR filter coefficients are derived as the nth difference of original filter coefficients, where n is a number of integrators in the integrator circuit, and wherein the FIR filter circuit is configured to perform computation operations with modulo arithmetic.

Abstract: Embodiments provide a method for sending a message from an RFID transponder to a reader during a transmission frame using active load modulation, the method comprising. An encoded bit signal has a first logic level during first time segments within the transmission frame and a second logic level during second time segments within the transmission frame. The first time segments include an initial time segment of the transmission frame. A transmission signal is generated based on the encoded bit signal. The transmission signal is generated having a first phase depending on the first logic level during the first time segments, a second phase depending on the second logic level during the second time segments, and the second phase during a time interval preceding the transmission frame.

Abstract: An integrated circuit includes an interconnection part with a via level situated between a lower metallization level and an upper metallization level. The lower metallization level is covered by an insulating encapsulation layer. An electrical discontinuity between a first via of the via level and a first metal track of the lower metallization level is provided at the level of the insulating encapsulation layer. The electrical discontinuity is formed prior to formation of any via of the via level and prior to any metal track of the upper metallization level. The electrical discontinuity may comprise: a portion of an additional insulating layer extending over the insulating encapsulation layer; a portion of the insulating encapsulation layer; or an insulating oxide on a top surface of the first metal track.

Abstract: A memory cell includes a source region and a drain region disposed in a semiconductor body. A channel region is disposed in the semiconductor body between the source region and the drain region. A floating gate is disposed between the semiconductor body and the control gate. The floating gate includes a protruding portion that is located over the channel region between the source and drain regions and spaced therefrom. The protruding portion is separated from the channel region by a first insulating layer that is thinner than a second insulating layer that separates remaining portions of the floating gate from the channel region.

Abstract: A voltage multiplier circuit operates in response to a received clock signal to perform a voltage multiplication operation on an input voltage to generate an output voltage. The voltage multiplier circuit includes a pair of intermediate nodes that are capacitively coupled to receive, respectively, opposite phases of a clock signal. A first CMOS driver circuit is coupled to one of the intermediate nodes and has an output configured to generate one phase of a level shifted output clock signal. A second CMOS driver circuit is coupled to another one of the intermediate nodes and has an output configured to generate another phase of the level shifted output clock signal.

Abstract: The disclosure concerns an integrated circuit comprising: a plurality of circuit domains, each circuit domain comprising: a plurality of transistor devices positioned over p-type and n-type wells, the transistor devices defining one or more data paths of the circuit domain; a monitoring circuit adapted to detect when the slack time of at least one of the data paths in the circuit domain falls below a threshold level and to generate an output signal on an output line based on said detection; and a biasing circuit adapted to modify a biasing voltage of the n-type and/or p-type well of the circuit domain.

Abstract: An integrated circuit includes an interconnection part with a via level situated between a lower metallization level and an upper metallization level. The lower metallization level is covered by an insulating encapsulation layer and an inter-metallization level insulating layer. An electrical discontinuity is provided between a via of the via level and a metal track of the lower metallization level. The electrical discontinuity is formed by an additional insulating layer having a material composition identical to that of the inter-metallization level insulating layer. The electrical discontinuity is situated between a bottom of the via and a top of the metal track, with the discontinuity being bordered by the insulating encapsulation layer.

Abstract: A MEMS device includes a platform carried by a frame via elastic connection elements configured to enable rotation of the platform about a first axis. A bearing structure supports the frame through first and second elastic suspension arms configured to enable rotation of the frame about a second axis transverse to the first axis. The first and second elastic suspension arms are anchored to the bearing structure through respective anchorage portions arranged offset with respect to the second axis. A stress sensor formed by first and second sensor elements respectively arranged on the first and second suspension arms is positioned in proximity of the anchorage portions, on a same side of the second axis, in a symmetrical position with respect to the first axis.

Abstract: A process for manufacturing a MEMS pressure sensor having a micromechanical structure envisages: providing a wafer having a substrate of semiconductor material and a top surface; forming a buried cavity entirely contained within the substrate and separated from the top surface by a membrane suspended above the buried cavity; forming a fluidic-communication access for fluidic communication of the membrane with an external environment, set at a pressure the value of which has to be determined; forming, suspended above the membrane, a plate region made of conductive material, separated from the membrane by an empty space; and forming electrical-contact elements for electrical connection of the membrane and of the plate region, which are designed to form the plates of a sensing capacitor, the value of capacitance of which is indicative of the value of pressure to be detected. A corresponding MEMS pressure sensor having the micromechanical structure is moreover described.

Abstract: Disclosed herein is a circuit for determining failure of a movable MEMS mirror. The circuit includes a mirror position sensor associated with the movable MEMS mirror and that generates an analog output as a function of angular position of the movable MEMS mirror. An analog to digital converter converts the analog output from the mirror position sensor to a digital mirror sense signal. Failure detection circuitry calculates a difference between the digital mirror sense signal at a first instant in time and the digital mirror sense signal at a second instant in time, determines whether the difference exceeds a threshold, and indicates failure of the movable MEMS mirror as a function of the difference failing to exceed the threshold.

Abstract: An integrated circuit includes an array of phase-change memory (PCM) cells, and bitlines coupled to the array of PCM cells. The integrated circuit also includes a first decoder circuit having a respective plurality of transistors having a first conductivity type being coupled together and to a given bitline from among the plurality thereof and configured to inject a program current pulse into a selected PCM cell. In addition, the integrated circuit includes a second decoder circuit having a plurality of transistors having a second conductivity type being coupled together and to the given bitline and configured to discharge the given bitline at an end of the program current pulse.

Abstract: A chain of flip-flops is tested by passing a reference signal through the chain. The reference signal is generated from a test pattern that is cyclically fed back at the cadence of a clock signal. The reference signal propagates through the chain of flip-flops at the cadence of the clock signal to output a test signal. A comparison is carried out at the cadence of the clock signal of the test signal and the reference signal, where the reference signal is delayed by a delay time taking into account the number of flip-flops in the chain and the length of the test pattern. An output signal is produced, at the cadence of the clock signal, as a result of the comparison.

Abstract: A method is for processing an analog signal coming from a transmission channel. The analog signal may include a useful signal modulated on a sub-set of carriers. The method may include analog-to-digital converting of the analog signal into a digital signal, and synchronization processing the digital signal. The synchronizing may include determining, in a time domain, a limited number of coefficients of a predictive filter from an autoregressive model of the digital signal, and filtering the digital signal in the time domain by a digital finite impulse response filter with coefficients based upon the limited number of coefficients to provide a filtered digital signal. The method may include detecting of an indication allowing a location in the frame structure to be identified, using the filtered digital signal and a reference signal.

Abstract: Disclosed herein is an electronic device including a flip flop and clock generation circuitry for controlling the flip flop. The flip flop includes a master latch receiving input for the flip flop, with the master latch latching the received input to its output in response to a first clock. The slave latch receives input from the output of the master latch, and latches the received input to its output in response to a second clock. The clock generation circuitry is configured to logically combine a device clock and an input clock to produce the first and second clocks.

Abstract: An RFID transponder includes a coding and modulation unit that generates a transmission signal by modulating an oscillator signal with an encoded bit signal. During a first and a second time segment, the encoded bit signal assumes a first and a second logic level, respectively. The transmission signal includes a first signal pulse having a first phase within the first time segment and a second signal pulse having a second phase that is shifted with respect to the first phase by a predefined phase difference within the second time segment. The transmission signal is paused for a pause period between the first and the second signal pulse. The pause period is shorter than a mean value of a period of the first time segment and a period of the second time segment.

Abstract: A substrate includes first and second semiconductor layers doped with opposite conductivity type in contact with each other at a PN junction to form a junction diode. At least one through silicon via structure, formed by a conductive region surrounded laterally by an insulating layer, extends completely through the first semiconductor layer and partially through the second semiconductor layer with a back end embedded in, and in physical and electrical contact with, the second semiconductor layer. A first electrical connection is made to the first through silicon via structure and a second electrical connection is made to the first semiconductor layer. A testing current is applied to and sensed at the first and second electrical connections in order to detect a defect in the at least one through silicon via structure.

Abstract: Various embodiments provide tone mapping of images and video from one dynamic range to an available dynamic range of a display device while preserving or enhancing image details. According to one embodiment, an enhanced tone mapping module is configured to decrease a luminance of an image or video from a high dynamic range to a standard dynamic range. Conversely, according to one embodiment, an enhanced inverse tone mapper to increase a luminance of an image or video from a standard dynamic range to a high dynamic range.

Abstract: An electro-optic device may include a substrate layer, and a first photonic layer over the substrate layer and having a first photonic device. The electro-optic device may include a second photonic layer over the first photonic layer and having a second photonic device. The electro-optic device may include a dielectric layer over the second photonic layer, and a first electrically conductive via extending through the dielectric layer and the second photonic layer to couple to the first photonic device, and a second electrically conductive via extending through the dielectric layer and coupling to the second photonic device. The electro-optic device may include a third electrically conductive via extending through the substrate layer, the second photonic layer, and the first photonic layer to couple to the substrate layer.