Abstract: An upstream signal capture device includes a signal capture circuit having a first port and a second port. The first port of the signal capture circuit is arranged for coupling to a diplexer. The upstream signal capture device also includes an amplifier having a first port and a second port, the first port of the amplifier coupled to the second port of the signal capture circuit, and an analog-to-digital converter (ADC) having a first port and a second port, the first port of the ADC coupled to the second port of the amplifier. The upstream signal capture device further includes a digital threshold detector having an input and output, the input of the digital threshold detector coupled to the second port of the analog-to-digital converter, and a memory configured to capture samples of the upstream signal. When using the upstream signal capture device to capture an upstream signal, a portion of an upstream signal is diverted into an analog-to-digital converter (ADC).

Abstract: A driver device coupled to a winding of an electro-mechanical actuator includes: a power stage driving the winding in a discontinuous mode by alternating conduction on-phases to off-phases, and a sensor circuit sensing a voltage across the winding in an off-phase, wherein, during such an off-phase the voltage across the winding includes a residual voltage which decays to zero. The power stage drives the winding from an on-phase to an off-phase by applying to the winding a reverse current pulse to invert the direction of flow of the current through the winding and produce an oscillation of the residual voltage, whereby the residual voltage includes a zero-crossing point after the current through the winding is exhausted. The sensor circuit senses the voltage across the winding at this zero-crossing point, whereby the voltage sensed across the winding at the zero-crossing point is indicative of the back electromotive force of the winding.

Abstract: According to an embodiment, a method can be performed by a first active near-field communication (NFC) device. The method includes assuming a field detection mode, generating an advertisement pulse, and checking whether a predefined condition is fulfilled. If the checking determines that the predefined condition is fulfilled, the method includes assuming an active mode and communicating with an adjacent active NFC device, and, if the checking does not determine that the predefined condition is fulfilled, the method includes staying in the field detection mode and generating another advertisement pulse.

Abstract: A control device for a switching converter having a transformer, with a primary winding receiving an input quantity, a secondary winding providing an output quantity, an auxiliary winding providing a feedback quantity, and a switch element. The control device has a processing module for generating a control signal for switching the switch element on the basis of the feedback quantity in order to regulate the output quantity via alternation of phases of storage and transfer of energy. The processing module controls the end of the transfer phase by comparing the feedback quantity with a comparison threshold. A discrimination circuit generates a signal for discrimination between the presence of a short circuit on the output or the fact that the input quantity is lower than a threshold. The processing module controls the end of the energy-transfer phase also on the basis of the discrimination signal.

Abstract: A voltage regulator includes a feedback regulation loop and a drive transistor configured to source current to a regulated output. A transient recovery circuit is coupled to the voltage regulator circuit and includes a first transistor coupled to source current into a control terminal of the drive transistor, wherein the source current is in addition to current sourced in response to operation of the feedback regulation loop. The first transistor is selectively actuated in response to a drop in voltage at the regulated output. The transient recovery circuit further includes a second transistor coupled to sink current from the regulated output. The sink current has a first non-zero magnitude in the quiescent operating mode of the regulator circuit. In response to an increase in voltage at the regulated output, the operation of the second transistor is modified to increase the sink current to a second, greater, non-zero magnitude.

Abstract: A memory management system for managing a memory and includes a multi-stage memory management unit including control circuitry and cache memory. The cache memory may have a respective translation look-aside buffer for each stage of the multi-stage memory management unit. The control circuitry may be configured to generate a blank data request including a virtual address and information that specifies that data is not to be read from the memory, perform address translations based on the generated blank data request in multiple stages until a physical address is obtained, and discard the blank data request.

Abstract: A galvanic isolation is provided between a first circuit and a second circuit. A first galvanically isolated link is configured to transfer power from a first circuit to a second circuit across the galvanic isolation. A second galvanically isolated link is configured to feed back an error signal from the second circuit to the first circuit across the galvanic isolation for use in regulating the power transfer and further configured to support bidirectional data communication between the first and second circuits across the galvanic isolation.

Abstract: A method for making a semiconductor device may include bonding a top lead frame component, having recesses, with a bottom lead frame component to form a lead frame, the top and bottom lead frame components each including metal. The method may include mounting an IC on the lead frame, encapsulating the IC and the lead frame, and removing portions of the bottom lead frame component to define contacts for the IC.

Abstract: A method includes receiving a data packet transmitted by a near field communications (NFC) device at a NFC controller. Whether the data packet includes application identifier routing information is determined, and based thereupon the data packet is routed to a default application identifier routing address based on a look-up table lacking an application identifier routing address associated with the application identifier routing information. Whether the data packet includes protocol routing information is determined based upon the data packet lacking the application identifier routing information, and the data packet is routed to a default protocol routing address based upon the look-up table lacking a protocol routing address associated with the protocol routing information, using the NFC controller. The default application identifier routing address is different than the default protocol routing address.

Abstract: Tuning an antenna circuit of an actively transmitting tag to a frequency of an interrogator carrier signal after the tag was inserted into a host device is accomplished by detecting presence of the interrogator carrier signal at a location of the actively transmitting tag and hereafter setting capacitances of capacitors and/or inductances of coils comprised in said antenna circuit in a way that resonance of said antenna circuit is established while the antenna circuit is excited by a magnetic field of said interrogator carrier signal. This allows automatic tuning of an antenna circuit of an actively transmitting tag after it was inserted together with a miniature card into a host device, such as a mobile telephone, personal digital assistant, tablet PC and similar devices.

Abstract: An electronic device includes a substrate having an external surface, and an integrated circuit over the external surface of the substrate. The substrate is provided with an electrical connection network including electrical links for linking the integrated circuit to another electrical device. Some of the electrical links include an impedance-compensating inductor on an external surface of the substrate.

Abstract: An ESD protection device includes a MOS transistor connected between a first terminal and a second terminal and having a gate region, source/drain region and a well region electrically coupled by a resistive-capacitive circuit configured to control turn on of the MOS transistor in response to an ESD event. The resistive-capacitive circuit has a common part with at least one of the source, gate or drain regions of the MOS transistor and includes a capacitive element and a resistive element. A first electrode of the capacitive element is formed by the resistive element and a second electrode of the capacitive element is formed by at least a portion of a semiconductor film within which the source/drain region is formed.

Abstract: Stress is introduced into the channel of an SOI FinFET device by transfer directly from a metal gate. In SOI devices in particular, stress transfer efficiency from the metal gate to the channel is nearly 100%. Either tensile or compressive stress can be applied to the fin channel by choosing different materials to be used in the gate stack as the bulk gate material, a gate liner, or a work function material, or by varying processing parameters during deposition of the gate or work function materials. P-gates and N-gates are therefore formed separately. Gate materials suitable for use as stressors include tungsten (W) for NFETs and titanium nitride (TiN) for PFETs. An optical planarization material assists in patterning the stress-inducing metal gates. A simplified process flow is disclosed in which isolation regions are formed without need for a separate mask layer, and gate sidewall spacers are not used.

Abstract: An electronic device disclosed herein includes a first integrated circuit die having formed therein photodiodes and readout circuitry for the photodiodes, with the readout circuitry including output pads exposed on a surface of the first integrated circuit die. A second integrated circuit die has formed therein storage capacitor structures for the photodiodes and digital circuitry for performing image processing on data stored in the storage capacitor structures, with the storage capacitor structures including input pads exposed on a surface of the second integrated circuit die. The first and second integrated circuit die are in a face to face arrangement such that the output pads of the first integrated circuit die face the input pads of the second integrated circuit die. An interconnect couples the output pads of the first integrated circuit die to the input pads of the second integrated circuit die.

Abstract: A readout device for a capacitive sense matrix includes a computer readable storage medium configured to store capacitance data. The capacitance data represents capacitance values of the capacitive sense matrix. The readout device also includes a readout circuit configured to receive a signal from the capacitive sense matrix, the readout circuit being configured based upon the capacitance data. Also described are a readout method and a method of compensating for variations in capacitance.

Abstract: A probe card includes a number probes. Each probe is adapted to contact a corresponding terminal of a circuit integrated in at least one die of a semiconductor material wafer during a test phase of the wafer. The probes include at least one probe adapted to provide and/or receive a radio frequency test signal to/from the corresponding terminal during the test phase. The probe card further includes at least one electromagnetic shield structure corresponding to the at least one probe adapted to provide and/or receive the radio frequency test signal for the at least partial shielding of an electromagnetic field irradiated by such at least one probe adapted to provide and/or receive the radio frequency test signal.

Abstract: An ESD protection device includes a MOS transistor connected between a first terminal and a second terminal and having a gate region, source/drain region and a well region electrically coupled by a resistive-capacitive circuit configured to control turn on of the MOS transistor in response to an ESD event. The resistive-capacitive circuit has a common part with at least one of the source, gate or drain regions of the MOS transistor and includes a capacitive element and a resistive element. A first electrode of the capacitive element is formed by the resistive element and a second electrode of the capacitive element is formed by at least a portion of a semiconductor film within which the source/drain region is formed.

Abstract: A well of a first conductivity type is insulated from a substrate of the same first conductivity type by a structure of a triple well type. The structure includes a trench having an electrically conductive central part enclosed in an insulating sheath. The trench supports a first electrode of a decoupling capacitor, with a second electrode provided by the well.

Abstract: An electronic system supports superior coupling by implementing a communication mechanism that provides at least for horizontal communication for example, on the basis of wired and/or wireless communication channels, in the system. Hence, by enhancing vertical and horizontal communication capabilities in the electronic system, a reduced overall size may be achieved, while nevertheless reducing complexity in printed circuit boards coupled to the electronic system. In this manner, overall manufacturing costs and reliability of complex electronic systems may be enhanced.

Abstract: A capacitive discharge circuit includes a line having a capacitance, a switched capacitor circuit including a capacitor, a switched circuit coupled to the line, and a voltage regulator coupled between the switched capacitor circuit and the switched circuit. A controller operates the switched capacitor circuit and switched circuit to in a first phase, charge the capacitor by coupling the capacitor between a common mode and a power supply, and in a second phase, discharge the capacitor by coupling the voltage regulator in series with the capacitor between the power supply node a ground. The controller is also configured to in a third phase, charge the capacitor by coupling the capacitor between the common mode and the power supply, and in a fourth phase, share charge between the line and the capacitor by coupling the voltage regulator and the capacitor in series between the line and the ground.