Abstract: A device described herein includes a movable MEMS mirror, with a driver configured to drive the movable MEMS mirror with a periodic signal such that the MEMS mirror oscillates at its resonance frequency. A feedback measuring circuit is configured to measure a signal flowing through the movable MEMS mirror. A processor is configured to sample the signal at first and second instants, generate an error signal as a function of a difference between the signal at the first instant in time and the signal at the second instant in time, and determine the opening angle of the movable MEMS mirror as a function of the error signal.

Abstract: A method of predicting the orbit of a satellite of a satellite positioning system, including: associating first and second types of satellites with first and second models of celestial mechanics forces, respectively; storing first ephemerides data of a satellite, associated to first time intervals and second ephemerides data associated to second time intervals. Further, the method comprises: calculating reference satellite positions based on the first ephemerides data; estimating first and second satellite positions in the first time intervals by using the second ephemerides data and the first and second forces models, respectively; determining first and second estimate errors by comparing the reference positions with the first and second positions, respectively; and detecting the type of satellite between the first and second types by an analysis of the first and second errors.

Abstract: An embodiment of an integrated electronic device having a body, made at least partially of semiconductor material and having a top surface, a bottom surface, and a side surface, and a first antenna, which is integrated in the body and enables magnetic or electromagnetic coupling of the integrated electronic device with a further antenna. The integrated electronic device moreover has a coupling region made of magnetic material, which provides, in use, a communication channel between the first antenna and the further antenna.

Abstract: A method and a device for protecting a security module connected to a near-field communication router in a telecommunication device, wherein a transmission between the router and the security module is only allowed in the presence of a radio frequency communication flow detected by the router.

Abstract: A semi-floating gate transistor is implemented as a vertical FET built on a silicon substrate, wherein the source, drain, and channel are vertically aligned, on top of one another. Current flow between the source and the drain is influenced by a control gate and a semi-floating gate. Front side contacts can be made to each one of the source, drain, and control gate terminals of the vertical semi-floating gate transistor. The vertical semi-floating gate FET further includes a vertical tunneling FET and a vertical diode. Fabrication of the vertical semi-floating gate FET is compatible with conventional CMOS manufacturing processes, including a replacement metal gate process. Low-power operation allows the vertical semi-floating gate FET to provide a high current density compared with conventional planar devices.

Abstract: An embodiment of a circuit includes a data latch and a plurality of cascaded latches, wherein a first of the plurality of cascaded latches is configured to receive a first signal from the data latch and each subsequent cascaded latch is configured to receive a data output signal of a preceding cascaded latch, and an error-detection circuit configured to receive the respective data output signals and detect error in operation of the cascaded latches based thereon.

Abstract: Described herein is a module for controlling a switching converter, which includes at least one inductor element and one switch element and generates an output electric quantity starting from an input electric quantity. The control module generates a command signal for controlling the switching of the switch element and includes an estimator stage, which generates an estimation signal proportional to the input electric quantity, on the basis of the command signal and of an input signal indicating a time interval in which the inductor element is demagnetized. The control module generates the command signal on the basis of the estimation signal.

Abstract: A circuit can be used in a speaker system. The circuit includes an amplifier with an output configured to be coupled to a speaker. An offset comparator has an input coupled the output of the amplifier and is configured to provide an offset control signal. A digital circuit has a first input coupled to an output of the offset comparator, a second input configured to receive an amplifier control signal, a third input configured to receive a play control signal, and an output configured to provide a forced mute signal that can be used to control the amplifier.

Abstract: A FBDDA amplifier comprising: a first differential input stage, which receives an input voltage; a second differential input stage, which receives a common-mode voltage; a first resistive-degeneration group coupled to the first differential input; a second resistive-degeneration group coupled to the second differential input; a differential output stage, generating an output voltage; a first switch coupled in parallel to the first resistive-degeneration group; and a second switch coupled in parallel to the second resistive-degeneration group. The first and second switches are driven into the closed state when the voltage input assumes a first value such that said first input stage operates in the linear region, and are driven into the open state when the voltage input assumes a second value, higher than the first value, such that the first input stage operates in a non-linear region.

Abstract: Circuits and methods for putting into service a lithium ion battery including a first charging step under a current of at most a few tens of microamperes per square centimeter for a plurality of hours.

Abstract: In accordance with an embodiment, a network device includes a network controller and at least one network interface coupled to the network controller that includes at least one media access control (MAC) device configured to be coupled to at least one physical layer interface (PHY). The network controller may be configured to determine a network path comprising the at least one network interface that has a lowest power consumption and minimum security attributes of available media types coupled to the at least one PHY.

Abstract: Dual gate FD-SOI transistors are used as MOSFET capacitors to replace passive well capacitors in analog microcircuits. Use of the dual gate FD-SOI devices helps to reduce unstable oscillations and improve circuit performance. A thick buried oxide layer within the substrate of an FD-SOI transistor forms a capacitive dielectric that can sustain high operating voltages in the range of 1.2 V-3.3 V, above the transistor threshold voltage. A secondary gate in the FD-SOI transistor is used to create a channel from the back side so that even when the bias voltage on the first gate is small, the effective capacitance remains higher. The capacitance of the buried oxide layer is further utilized as a decoupling capacitor between supply and ground. In one example, a dual gate PMOS FD-SOI transistor is coupled to an operational amplifier and a high voltage output driver to produce a precision-controlled voltage reference generator.

Abstract: A manufacturing method of an electrochemical sensor comprises forming a graphene layer on a donor substrate, laminating a film of dry photoresist on the graphene layer, removing the donor substrate to obtain an intermediate structure comprising the film of dry photoresist and the graphene layer, and laminating the intermediate structure onto a final substrate with the graphene layer in electrical contact with first and second electrodes positioned on the final substrate. The film of dry photoresist is then patterned to form a microfluidic structure on the graphene layer and an additional dry photoresist layer is laminated over the structure. In one type of sensor manufactured by this process, the graphene layer acts as a channel region of a field-effect transistor, whose conductive properties vary according to characteristics of an analyte introduced into the microfluidic structure.

Abstract: A device for monitoring a critical path of an integrated circuit includes a replica of the critical path formed by sequential elements mutually separated by delay circuits that are programmable though a corresponding main multiplexer. A control circuit controls delay selections made by each main multiplexer. A sequencing module operates to sequence each sequential element using a main clock signal by delivering, in response to a main clock signal, respectively to the sequential elements, secondary clock signals that are mutually time shifted in such a manner as to take into account the propagation time inherent to the main multiplexer.

Abstract: An electronic device disclosed herein includes a single photon avalanche diode (SPAD) configured to detect an incoming photon and to generate a first pulse signal in response thereto. Pulse shaping circuitry is configured to generate a second pulse signal from the first pulse signal by high pass filtering the first pulse signal. The pulse shaping circuitry includes a transistor drain-source coupled between a first node and a reference node, and a capacitor coupling the first node to an anode of the SPAD.

Abstract: A configurable read only memory (ROM) including a number of memory cells. The memory cells include first-type memory cells that are electrically-programmable antifuses and second-type memory cells that are antifuses programmed by masking.

Abstract: A bidirectional voltage differentiator circuit comprises start-up circuitry, sensing circuitry, and output circuitry coupled to logic circuitry. The start-up circuitry acts to start-up the sensing circuitry when the circuit is powered on, and accelerates the response of the sensing circuitry thereafter. The sensing circuitry senses variation in an input voltage applied to an input node. Responsive to the voltage variation sensed by the sensing circuitry, the output circuitry produces a state change at a first or second output node. The logic circuitry receives the states of the output nodes and produces a logic output signal to indicate the occurrence of the variation sensed in the input voltage. The voltage sensing circuit is operable to sense variation of the input voltage regardless of whether the voltage is rising or falling and without regard to the DC value of the input voltage.

Abstract: A stack including a dual-passivation is etched locally so as to reveal contact pads of an integrated circuit which are situated above a last metallization level of an interconnection part of the integrated circuit. This stack serves to protect the integrated circuit against a breakdown of at least one dielectric region, at least in part porous, separating two electrically conducting elements of the interconnection part of the integrated circuit. Such a breakdown may occur due to electrical conduction assisted by the presence of defects within the at least one dielectric region.

Abstract: A memory circuit includes a wordline, memory cells connected to the wordline and a wordline driver circuit including a p-channel pull-up transistor. The memory circuit further includes a read assist circuit including an n-channel pull-down transistor having a source-drain path connected between the wordline and a ground node and an n-channel diode-connected transistor having a source-drain path connected between a positive supply node and a gate terminal of the n-channel pull-down transistor. The n-channel diode-connected transistor is configured to apply a biasing voltage to the gate terminal of the n-channel pull-down transistor that is a relatively lower voltage for relatively lower temperatures and a relatively higher voltage for relatively higher temperatures.

Abstract: An electronic component includes a processor and a memory. The electronic component has a secure platform capable of storing at least one dual key pair and a corresponding digital signature. There is also a system including a host machine and an electronic component capable of being operated by the host machine. The electronic component has a processor, a memory, and a secure platform capable of storing at least one dual key pair and a corresponding digital signature. Another aspect describes a method, which includes reading a public key from an electronic component by a host machine, verifying the public key against a stored key in the host machine, digitally signing data using a private key from the electronic component, verifying the signed data against the stored key, and using the electronic component by the host machine only if the signed data and the public key are verified.