Abstract: An optical modulator includes an optical waveguide including at least a first PN junction phase shifter and a second PN junction phase shifter. A driver circuit drives operation of the first and second PN junction phase shifters in response to a pulse amplitude modulated (PAM) analog signal having 2n levels. The PAM analog signal is generated by a digital to analog converter that receives an n-bit input signal. In an implementation, the optical waveguide and PN junction phase shifters are formed on a first integrated circuit chip and the driver circuit is formed on a second integrated circuit chip that is stacked on and electrically connected to the first integrated circuit chip.

Abstract: A method comprising: forming an SiGe layer on sidewalls of one or more fins of a semiconductor device by a non-selective deposition of amorphous SiGe, the fins being formed of Si or SiGe; depositing a silicon oxide layer over the SiGe layer; and forming an SiGe channel formation region within each fin by performing Ge enrichment to diffuse Ge atoms from the SiGe layer into the one or more fins.

Abstract: An electronic device disclosed herein includes a photodiode, and a plurality of storage components each configured to independently sample and hold charges from the photodiode during each of a plurality of integration periods without discharging the held charge between successive integration periods of the plurality thereof. Each storage component accumulates the charges from the photodiode for a given time window during each integration period, with the given time window for each storage component being different than the given time window for each other storage component. Readout circuitry is configured to transfer the charges from each storage component to a readout node in a respective read period for that storage component. The photodiodes and storage components are not configured to be reset between successive time windows during each integration period.

Abstract: An integrated electronic device includes a semiconductive film above a buried insulating layer that is situated above a supporting substrate. An active zone is delimited within the semiconductive film. A MOS transistor supported within the active zone includes a gate region situated above the active zone. The gate region includes a rectilinear part situated between source and drain regions. The gate region further includes a forked part extending from the rectilinear part. A raised semiconductive region situated above the active zone is positioned at least partly between portions of the forked part. A substrate contact for the transistor is electrically coupled to the raised semiconductive region.

Abstract: A rectifier cell includes a first cell branch and a second cell branch that extend in parallel between two opposite nodes receiving an a.c. signal. The first cell branch includes a first pair of transistors arranged with their current paths cascaded, with a first intermediate point in-between. The second cell branch includes a second pair of transistors arranged with their current paths cascaded, with a second intermediate point in-between. Each of the pairs of transistors includes a first transistor with a control terminal coupled to one of the two opposite nodes and a second transistor with a control terminal coupled to the other of the two opposite nodes. The bulks of the transistors receive voltages in order to vary the transistor threshold voltage by bringing the threshold voltage to a first value during forward conduction and to a second value during reverse conduction.

Abstract: A vertical power component includes a doped silicon substrate of a first conductivity type. A local well of a second conductivity type extends from an upper surface of the substrate. A passivation structure coats a peripheral region of the upper surface side of the substrate surrounding the well. This passivation structure includes, on top of and in contact with the peripheral substrate region, a first region made of a first passivation material and a second region made of a second passivation material. The second region generates, in a surface region of the substrate in contact with said second region, a local increase of the concentration of majority carriers in the substrate.

Abstract: A wide band continuous time delta-sigma modulator implements a time interleaved quantization processing operation. The modulator may provide for an inherent finite impulse response filtering in the feedback loop. Additionally, further finite impulse response filtering in each time interleaved feedback path may be provided.

Abstract: An electrostatic discharge protection device includes first and second diodes series-connected between first and second connection terminals. A third connection terminal is coupled to a junction of the first and second diodes. A capacitor is connected in parallel with the first and second diodes between the first and second terminals.

Abstract: A triac has a vertical structure formed from a silicon substrate having an upper surface side. A main metallization on the upper surface side has a first portion resting on a first region of a first conductivity type formed in a layer of a second conductivity type. A second portion of the main metallization rests on a portion of the layer. A gate metallization on the upper surface side rests on a second region of the first conductivity type formed in the layer in the vicinity of the first region. A porous silicon bar formed in the layer at the upper surface side has a first end in contact with the gate metallization and a second end in contact with the main metallization.

Abstract: An electronic device includes a support and a component in the form of an integrated circuit chip having a rear face mounted above a front face of the support and a front face opposite its rear face. A block is provided for at least partially encapsulating the component above the front face of the support. The device also includes at least one thermal dissipation member having a flexible sheet having at least two portions folded onto one another while forming at least one fold between them, these portions facing one another at least partly.

Abstract: One embodiment provides a method for reading a memory cell of a memory plane of a memory of the erasable electrically-programmable ROM type. The word line and of the bit line to which the memory cell belongs are selected and the content of the cell is read via a read amplifier. One input of the read amplifier is connected to the bit line and pre-charged at a pre-charge voltage. During the read operation, a source voltage higher than the pre-charge voltage is applied to the source of the floating-gate transistor of the cell. A read current flows from the cell towards the input of the read amplifier and then flows through a programmed cell.

Abstract: The present disclosure relates to a method for transmitting two consecutive pairs of images. The method may include decimating each image with a ratio of 2, assembling the two decimated images of each pair in a composite image, transmitting the composite images, and reconstructing complete images from the composite images. In decimation, the information removed from the images of the first pair may be kept in the images of the second pair, from the spatial point of view, and the complete images may be reconstructed by de-interlacing processing from the composite images.

Abstract: A control unit is for a bridge circuit. The control unit may include a signal generator configured to generate first and second periodic drive signals for the bridge circuit, and determine a switch-on duration of the first and second periodic drive signals based upon a first digital data value having a first resolution. The control unit may include a controller configured to receive a second digital data value having a second resolution. The second resolution may be greater than the first resolution. The controller may be configured to generate the first digital data value so that, over periods of the first and second periodic drive signals, the first digital data value corresponds to an average of the second digital data value.

Abstract: A current limiting circuit includes a current sensing module that is configured to sense an output current of a power transistor and to generate a corresponding sensing current which is proportional to the output current. A first current limiting module coupled to the current sensing module is configured to generate a first limiting current based on the sensing current when a variation of the output current of the power transistor exceeds a first current level. A second current limiting module coupled to the current sensing module is configured to generate a second limiting current based on the sensing current when a variation of the output current of the power transistor exceeds a second current level. A converting module coupled to the first and second current limiting modules and the power transistor controls a gate voltage of the power transistor based at least on the first and second limiting currents.

Abstract: An electro-optic device may include a photonic chip having an optical grating at a surface, and an IC coupled to the photonic chip. The electro-optic device may include an optical element defining an optical path above the optical grating, and a dichroic mirror above the optical grating and aligned with the optical path.

Abstract: A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the substrate. The first well is bordered at a component periphery with an insulating porous silicon ring. An upper surface of the porous silicon ring is only in contact with the substrate of the first conductivity type. The insulating porous silicon ring penetrates into the substrate down to a depth greater than a thickness of the well. The porous silicon ring is produced by forming a doped well in a first surface of a doped substrate, placing that first surface of the substrate into an electrolytic bath, and circulating a current between an opposite second surface of the substrate and the electrolytic bath.

Abstract: An arrayed waveguide grating multiplexer/demultiplexer includes an array of optical waveguides ordered in sequence from a shortest waveguide up to a longest waveguide, and identical phase shifters configured to be controlled by a same control signal. Each phase shifter increases/decreases an optical path of an optical waveguide by the same quantity based on the control control signal.

Abstract: A method is provided for controlling a converter of the multiphase interleaving type. According to the method, there is detected when a change of the load applied to an output terminal of the converter occurs. All the phases of the converter are simultaneously turned off, and a driving interleaving phase shift is recovered so as to restart a normal operation of the converter. A controller for carrying out such a method is also provided.

Abstract: A method can be used for writing in a memory location of the electrically-erasable and programmable memory type. The memory location includes a first memory cell with a first transistor having a first gate dielectric underlying a first floating gate and a second memory cell with a second transistor having a second gate dielectric underlying a second floating gate that is connected to the first floating gate. In a first writing phase, an identical tunnel effect is implemented through the first gate dielectric and the second gate dielectric. In a second writing phase, a voltage across the first gate dielectric but not the second gate dielectric is increased.

Abstract: A resonant converter includes a primary switching circuit with a primary winding and a primary full-bridge switching stage that drives the primary winding. A resonance inductor is in series with the primary winding. A secondary resonant circuit has a secondary winding magnetically coupled to the primary winding and a resonance capacitor electrically connected in parallel with the secondary winding. A secondary rectification stage is electrically connected in parallel to the resonance capacitor. A driving module receives a signal representing the voltage measured across an upper or lower switching half-bridge. The drive module detects a negative voltage in the signal. At each cycle, the drive module anticipates a control signal for control of the switches of the lower or upper switching half-bridge that is to be activated the next switching cycle by a shift time that is reduced cycle until the condition of absence of negative voltage in the signal is satisfied.