Abstract: An image sensor device may include an interconnect layer, an image sensor IC on the interconnect layer, and a barrel adjacent the interconnect layer and having first electrically conductive traces. The image sensor device may include a liquid crystal focus cell carried by the barrel and having cell layers, and second electrically conductive contacts. A pair of adjacent cell layers may have different widths. The image sensor device may include an electrically conductive adhesive body coupling at least one of the second electrically conductive contacts to a corresponding one of the first electrically conductive traces.

Abstract: Methods and structures for forming strained-channel FETs are described. A strain-inducing layer may be formed under stress in a silicon-on-insulator substrate below the insulator. Stress-relief cuts may be formed in the strain-inducing layer to relieve stress in the strain-inducing layer. The relief of stress can impart strain to an adjacent semiconductor layer. Strained-channel, fully-depleted SOI FETs and strained-channel finFETs may be formed from the adjacent semiconductor layer. The amount and type of strain may be controlled by etch depths and geometries of the stress-relief cuts and choice of materials for the strain-inducing layer.

Abstract: A method for forming a via in an integrated circuit comprises patterning a first opening in a first hardmask, the first hardmask disposed on a first organic self-planarizing polymer (OPL) layer, removing an exposed portion of the first OPL layer to define a cavity, removing an exposed portion of a second hardmask in the cavity, removing an exposed portion of a first dielectric layer disposed under the second hardmask to further define the cavity, removing an exposed portion of a first cap layer in the cavity, removing an exposed portion of a second dielectric layer to further define the cavity, removing an exposed portion of a second cap layer to further define the cavity, removing an exposed portion of a liner layer over a second conductive material in the cavity, and depositing a conductive material in the cavity.

Abstract: A semiconductor integrated device, comprising: a package defining an internal space and having an acoustic-access opening in acoustic communication with an environment external to the package; a MEMS acoustic transducer, housed in the internal space and provided with an acoustic chamber facing the acoustic-access opening; and a filtering module, which is designed to inhibit passage of contaminating particles having dimensions larger than a filtering dimension and is set between the MEMS acoustic transducer and the acoustic-access opening. The filtering module defines at least one direct acoustic path between the acoustic-access opening and the acoustic chamber.

Abstract: An electronic device may include a substrate, a buried oxide (BOX) layer overlying the substrate, at least one semiconductor device overlying the BOX layer, and at least one shallow trench isolation (STI) region in the substrate and adjacent the at least one semiconductor device. The at least one STI region defines a sidewall surface with the substrate and may include an oxide layer lining a bottom portion of the sidewall surface, a nitride layer lining a top portion of the sidewall surface above the bottom portion, and an insulating material within the nitride and oxide layers.

Abstract: A driver device for driving a DC motor using PWM modulated drive signals includes comparator circuits for producing digitalized Back-EMF signals having first and second values as a function of the Back-EMF signals being above or below a respective threshold, and an inverter for driving the PWM modulated drive signals in a phased relationship with the digitalized Back-EMF signals. The driver device also includes controller circuits configured for controlling the respective threshold by minimizing the error between a time measured between two consecutive opposed edges of the digitalized Back-EMF signal and half a time measured between two consecutive homologous edges of the digitalized Back-EMF signal.

Abstract: A method for detecting a fault injection in a circuit, wherein a bit pattern is mixed in a bit stream originating from a noise source and the presence of this pattern is detected in a signal sampled downstream of the mixing.

Abstract: A receiver for digital signals includes a radiofrequency stage. A feedback loop controls an amplitude of a modulated radiofrequency signal passing through the radiofrequency stage as a function of a comparison of a baseband signal with a reference value. A baseband stage includes an RC network cascaded to the radiofrequency stage and coupled to a baseband detector that generates the baseband signal. The feedback loop includes a circuit for detecting a range of variation of the comparison. The amplitude of the modulated radiofrequency signal is controlled as a function of an end value (e.g., maximum or minimum) of the detected range of variation. A switching circuit operates to selectively short circuit a resistive component of the RC network during receiver start-up.

Abstract: Manufacture of a transistor device with at least one P type transistor with channel structure strained in uniaxial compression strain starting from a silicon layer strained in biaxial tension, by amorphisation recrystallisation then germanium condensation.

Abstract: The method of manufacturing a structure comprising one or several strained semiconducting zones capable of forming one or several transistor channel regions, the method including the following steps: a) providing a substrate coated with a masking layer wherein there are one or several first slits exposing one or several first oblong semiconducting portions made of a first semiconducting material and extending in a first direction, b) making a second semiconducting material grow with a mesh parameter different from the mesh parameter of the first semiconducting material, so as to form one or several first semiconducting blocks strained along the first direction, on said one or several first oblong semiconducting portions.

Abstract: An electronic circuit drives a plurality of LED strings connected in series. The electronic circuit includes a regulation module corresponding to each LED string, with the regulation module connected to the cathode terminal of the corresponding LED string. Each regulation module is further coupled to receive a reference voltage in phase with a rectified a.c. voltage. The regulation modules execute in turn and in sequence a current-regulation phase as a function of a trend of the reference voltage. Each regulation module, when executing the current-regulation phase, functions to regulate the current that flows in the corresponding LED string and in any previous LED strings in the series connection so that the regulated current is proportional to the reference voltage.

Abstract: An actively transmitting tag detects a shift of a phase of an antenna signal (as) with regard to a phase of a transmitted signal (ts) in time intervals with a length of one half-period of a subcarrier, in which time intervals it transmits high-frequency wave packets with their phase being inverted according to a communication protocol at the ends of said half-periods. Generation of said wave packets is controlled by said phase shift in a way that said phase shift retains its absolute value at transitions into subsequent half-periods. Synchronizing the tag's transmission to a received interrogator signal carried out even during tag's transmitting enables the tag to transmit according to protocol ISO 14443 B by inverting a phase at transitions between said half-periods. Said synchronizing is carried out although no time window without a tag transmitting exists within the transmitted data frame.

Abstract: A Schmitt trigger circuit having an input coupled to a current summing junction. A trickle current source generates a trickle current applied to the current summing junction. A bandgap current source generates a bandgap current applied to the current summing junction (wherein the bandgap current is fixed when a supply voltage exceeds a threshold). A variable current source generates a variable current applied to the current summing junction (wherein the variable current varies dependent on the supply voltage). At the current summing junction, the variable current is offset against the trickle and bandgap currents with respect to generating a voltage that is sensed at the Schmitt trigger circuit input.

Abstract: A wireless data transmitter including: a data modulator adapted to modulate a data signal based on a frequency signal; and at least one antenna adapted to wirelessly transmit the modulated data signal and the frequency signal independently.

Abstract: A driver circuit for driving a transmission line includes a voltage driver and a current driver. The voltage driver is for driving the transmission line with a first voltage gain in a first operation mode. The current driver is activatable in a second operation mode for driving, together with the voltage driver, the transmission line with a second voltage gain. The transmission line may be an Ethernet-over-copper transmission line with electrical data signals from a data generator.

Abstract: An electronic component includes one or more circuits having electrical connections coupled therewith. The electrical connections include a lead frame as well as electrical wires coupling the circuit or circuits to respective portions of the lead frame. The electrical wires may be formed as one piece with the respective portion of the lead frame without joints therebetween, e.g., by 3D printing.

Abstract: An apparatus includes a first input/output (I/O) interface circuit having a maximum voltage rating. The first I/O interface circuit includes a level shifter and an output stage. A reference voltage bias generator is coupled to the first I/O interface circuit, to a first supply voltage, and to a first ground potential. The reference voltage bias generator is configured to generate a plurality of reference bias signals, including a first reference voltage and a second reference voltage. When the first supply voltage is not greater than the maximum voltage rating, the first reference voltage is equal to the first supply voltage and the second reference voltage is equal to the first ground potential. When the first supply voltage is greater than the maximum voltage rating, the first reference voltage is equal to the first supply voltage times a first fraction, and the second reference voltage is equal to the first supply voltage times a second fraction.

Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminum oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminum oxide, forming a first intermediate protective layer; forming a second layer of aluminum oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminum oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.

Abstract: A clock-signal generator circuit, for generating an output clock signal starting from an input clock signal, includes: a monostable stage having a clock input configured to receive the input clock signal, a control input configured to receive a control signal, and an output configured to supply the output clock signal having a duty cycle variable as a function of the control signal; and a feedback loop, operatively coupled to the monostable stage for generating the control signal as a function of a detected value, and of a desired value, of the duty cycle of the output clock signal.

Abstract: The invention relates to a method for measuring thickness variations in a layer of a multilayer semiconductor structure, characterized in that it comprises: acquiring, via an image acquisition system, at least one image of the surface of the structure, the image being obtained by reflecting an almost monochromatic light flux from the surface of the structure; and processing the at least one acquired image in order to determine, from variations in the intensity of the light reflected from the surface, variations in the thickness of the layer to be measured, and in that the wavelength of the almost monochromatic light flux is chosen to correspond to a minimum of the sensitivity of the reflectivity of a layer of the structure other than the layer the thickness variations of which must be measured, the sensitivity of the reflectivity of a layer being equal to the ratio of: the difference between the reflectivities of two multilayer structures for which the layer in question has a given thickness difference; to th