Abstract: A lead frame having a plurality of concentric lead frame rings configured to receive and support a variety of integrated circuit die having a variety of sizes. The rings are separated from each other by gaps and coupled together by a plurality of tie bars. The concentric rings may be circular or rectangular. The tie bars may extend diagonally from the rings or perpendicularly to the rings.

Abstract: An integrated circuit including a plurality of first semiconductor strips of a first conductivity type and of second semiconductor strips of a second conductivity type arranged in alternated and contiguous fashion on a region of the second conductivity type, including for each of the first strips: a plurality of bias contacts; for each bias contact, a switch capable of applying a potential on the bias contact; two detection contacts arranged at the ends of the first strip; and a detection circuit having its activation causing the turning off of the switches and the comparison with a threshold of the resistance between the detection contacts.

Abstract: A transformer of the balanced-unbalanced type includes a primary inductive circuit and a secondary inductive circuit housed inside an additional inductive winding connected in parallel to the terminals of the secondary circuit and inductively coupled with the primary circuit and the secondary circuit.

Abstract: A cascode voltage generating circuit and method are provided. The circuit includes four switching elements. In a high voltage operation mode, the first and second switching elements, respectively, couple a first intermediate voltage input node to a first intermediate voltage output node, and a second intermediate voltage input node to a second intermediate voltage output node. In a low voltage operation mode, the third switching element couples the first and second intermediate voltage input nodes to a ground reference voltage level, and the fourth switching element couples the first and second intermediate voltage output nodes to a supply voltage level.

Abstract: One or more first signals and one or more second signals, wherein the second signal(s) are slowly varying or low frequency signals in comparison with the first signals and are converted from analog to digital by sampling the first signals and the second signals to produce samples thereof for analog-to-digital conversion, subjecting the samples of the first signals to conversion to digital at a certain conversion rate, subjecting the samples of the second signal to conversion to digital by segments so that these segments are subjected to conversion to digital along with the samples of the first signals at the respective conversion rate, and reconstructing digital converted samples of the second signal from the segments subjected to conversion to digital.

Abstract: An electronic device includes a support board having a mounting face and an integrated circuit chip mounted on the mounting face. An encapsulation block embeds the integrated circuit chip, the encapsulation block extending above the integrated circuit chip and around the integrated circuit chip on the mounting face of the support board. The encapsulation block includes a front face with a hole passing through the encapsulation block to uncovering at least part of an electrical contact. A layer made of an electrically conducting material fills the hole to make electrical connection to the electrical contact and further extends over the front face of the encapsulation block.

Abstract: A radiation hardened memory cell includes an odd number of storage elements configured to redundantly store an input data logic signal. The storage elements include output lines for outputting respective logic signals having respective logic values. A logic combination network receives the respective logic signals and is configured to generate an output signal having a same logic value as a majority of the logic signals output from the storage elements. An exclusive logic sum circuit receives the respective logic signals output from the storage elements and is configured to produce a refresh of the logic data signal as stored in the storage elements when one of the logic signals output from the storage elements undergoes a logic value transition due to an error event.

Abstract: Embodiments of the present disclosure provide a semiconductor device, a semiconductor package, and a method for manufacturing a semiconductor device. The semiconductor device comprises: a semiconductor die; an electrical isolation layer formed on a surface of the semiconductor die; a substrate; and a non-conductive adhesive layer disposed between the electrical isolation layer and the substrate, so as to adhere the electrical isolation layer to the substrate.

Abstract: An embodiment of an arrangement includes a voltage regulator configured to provide an output voltage, said voltage regulator configured to receive one of a plurality of different regulator reference voltages and a controller configured to provide a selection signal, said selection signal being used to control which of said regulator reference voltages said voltage regulator receives.

Abstract: The pressure in the combustion chamber of an electronically controlled spark plug ignition engine may be estimated in real time mode without specific sensors by processing sensed ionization current data to calculate features of the current waveform proven to be correlated to the pressure inside the engine cylinders and correlating them on the basis of a look up table of time invariant correlation coefficients generated through a calibration campaign of tests on a test engine purposely equipped with sensors. A mathematical model of the electrical and physical spark plug ignition system and combustion chamber of the engine is refined during calibration by iteratively testing the interactive performance of correlation coefficients of related terms of a mathematical expression of the model and comparing the expressed pressure value with the real pressure value as measured by a sensor.

Abstract: An instrumentation amplifier includes first and second resistors for gain setting. The operational amplifiers within the instrumentation amplifier include selectively enabled current drive sources coupled to the amplifier output. The first and second resistors have variable resistances. A control circuit is configured to select the variable resistances of the first and second resistors to implement a fixed gain for the instrumentation amplifier and further selectively enable the current drive sources. The control circuit receives an indication of a downstream programmable gain (for example, from a downstream programmable gain amplifier). The variable resistances of the first and second resistors are selected to be scaled inversely with respect to the downstream programmable gain and the current drive sources are enabled proportionately with respect to the downstream programmable gain.

Abstract: A memory device includes an input/output interface, a bus of SPI type coupled to the input/output interface, and a plurality of individual non-volatile memory devices connected to the bus of SPI type. The chip select inputs of each individual memory device are all connected to one and the same chip select wire of the SPI bus. The individual memory devices are further configured and controllable so as to behave, as seen by the input/output interface, as a single non-volatile memory device, the total memory space of which has a total memory capacity equal to the sum of the individual memory capacities of the individual devices.

Abstract: A device is provided for jamming electromagnetic radiation liable to be emitted by at least one portion of an interconnect region located above at least one zone of an integrated electronic circuit produced in and on a semiconductor substrate. The device includes an antenna located above the at least one zone of the circuit and generating circuit coupled to the antenna and configured to generate an electrical signal having at least one pseudo-random property to pass through the antenna.

Abstract: A transistor is fabricated by growing an epitaxial layer of semiconductor material on a semiconductor layer and forming an opening extending through the epitaxial layer at the gate location. This opening provides, from the epitaxial layer, a source epitaxial region on one side of the opening and a drain epitaxial region on an opposite side of the opening. The source epitaxial region and a first portion of the semiconductor layer underlying the source epitaxial region are annealed into a single crystal transistor source region. Additionally, the drain epitaxial region and a second portion of the semiconductor layer underlying the drain epitaxial region are annealed into a single crystal transistor drain region. A third portion of the semiconductor layer between the transistor source and drain regions forms a transistor channel region. A transistor gate electrode is then formed in the opening above the transistor channel region.

Abstract: An electronic device includes a carrier substrate with at least one electronic-circuit chip mounted on a front face of the carrier substrate. An encapsulation block on the front face and embedding the electronic-circuit chip has a periphery with corners. The encapsulating block further has, in at least one local zone located in at least one corner and from the front face of the carrier substrate, a smaller thickness than a thickness of the encapsulation block at least in a surrounding zone. The electronic device is manufactured by a process in which the zone of smaller thickness is obtained by molding or by machining.

Abstract: The present disclosure provides a capacitive sensing structure for detecting a force touch in a touchscreen application. Performance uniformity of the force touch sensor is improved by providing a capacitive force touch structure having sensing electrodes of varying thickness, wherein the variation in electrode thickness corresponds to a relative displacement potential of portions of the sensing electrode. This variation in thickness improves performance uniformity of the force sensor by compensating for the displacement potential (i.e., flexibility) of the sensing electrodes so that a force touch applied to the touch surface is measured consistently regardless of the location of the force touch on the touch surface.

Abstract: An integrated electronic detector operates to detecting a variation in potential on an input terminal. The detector includes a MOS transistor having a drain forming an output. Variation in drain current is representative of the variation in potential. A bipolar transistor has a base forming the input terminal and a collector electrically connected to the gate of the MOS transistor. The detector has a first configuration in which the bipolar transistor is conducting and the MOS transistor is turned off. The detector has a second configuration in which the bipolar transistor is turned off and the MOS transistor is in a sub-threshold operation. Transition of the detector from the first configuration to the second configuration occurs in response to the variation in potential.

Abstract: A driver circuit includes a high-side power transistor having a source-drain path coupled between a first node and a second node and a low-side power transistor having a source-drain path coupled between the second node and a third node. A high-side drive circuit, having an input configured to receive a drive signal, includes an output configured to drive a control terminal of said high-side power transistor. The high-side drive circuit is configured to operate as a capacitive driver. A low-side drive circuit, having an input configured to receive a complement drive signal, includes an output configured to drive a control terminal of said low-side power transistor. The low-side drive circuit is configured to operate as a level-shifting driver.

Abstract: An electronic device includes a supporting substrate having a front mounting face and an electrical connection network. An integrated circuit chip is mounted to the mounting face and is electrically connected to the electrical connection network. A primary encapsulation block embeds the integrated circuit chip and extends above and around the integrated circuit chip on the mounting face of the supporting substrate. An opening is provided in the primary encapsulation block to at least partially uncover an electrical contact. An additional wire made from an electrically conductive material has an end that is electrically connected to the electrical contact. An additional encapsulation block above the primary encapsulation block embeds the additional wire.

Abstract: Incorporation of metallic quantum dots (e.g., silver bromide (AgBr) films) into the source and drain regions of a MOSFET can assist in controlling the transistor performance by tuning the threshold voltage. If the silver bromide film is rich in bromine atoms, anion quantum dots are deposited, and the AgBr energy gap is altered so as to increase Vt. If the silver bromide film is rich in silver atoms, cation quantum dots are deposited, and the AgBr energy gap is altered so as to decrease Vt. Atomic layer deposition (ALD) of neutral quantum dots of different sizes also varies Vt. Use of a mass spectrometer during film deposition can assist in varying the composition of the quantum dot film. The metallic quantum dots can be incorporated into ion-doped source and drain regions. Alternatively, the metallic quantum dots can be incorporated into epitaxially doped source and drain regions.