Abstract: A digital audio playback circuit includes a noise shaping circuit configured to receive an input digital audio signal, and a digital to analog converter (DAC) configured to convert the input digital audio signal to a pre-amplified output analog audio signal according to a gain ramp defined by a gain control signal. A muting circuit is configured to compare input digital audio signal to a threshold and assert a mute control signal when the input digital audio signal is below the threshold. An analog gain control ramp circuit is configured to generate the gain control signal in response to the mute control signal to cause the gain ramp to ramp down. An amplifier is configured to amplify the pre-amplified output analog audio signal for playback by an audio playback device.

Abstract: A power-saving system includes a retention memory element for a retained peripheral that is set to a logic state during an operational-power mode and maintains the logic state during an enhanced power-saving mode. The power-saving system also includes a non-retention memory element for a non-retained peripheral that is set to a logic state during the operational-power mode of the power-saving system; and a controller that instructs the retention memory element to maintain its logic state while in an enhanced power-saving mode.

Abstract: A semiconductor device for ambient sensing including: a cap traversed by a hole; and a main body mechanically coupled to the cap so as to delimit a cavity, which is interposed between the main body and the cap. The main body includes a semiconductor body and a coupling structure, which is interposed between the semiconductor body and the cap and laterally delimits a channel, which fluidically couples the cavity and the hole. The channel performs a mechanical filtering that is finer than the mechanical filtering performed by the hole.

Abstract: A method of operating a MEMS device includes generating a MEMS drive signal, and generating and modifying the MEMS drive signal based upon a control signal to produce a modified drive signal. The method further includes generating the control signal by determining when a feedback signal from the MEMS device is at its peak value, comparing the peak value to a desired value when the feedback signal is as its peak, and generating the control signal depending upon whether the peak value is at least equal to a desired value. The modification of the MEMS drive signal based upon the control signal to produce the modified drive signal includes skipping generation of a next pulse of the modified drive signal when the control signal indicates the peak value is at least equal to the desired value.

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

Abstract: A random access memory (RAM) includes an array of arranged in rows and columns. The rows of the storage elements correspond to respective memory locations of the RAM. The storage elements of a row have a common gated-clock input and respective data inputs, and each row of the array of storage elements includes a plurality of D type latches. In operation, an address input of the RAM receives a memory address identifying a memory location in the RAM. Clock gating circuitry of the RAM, generates respective gated-clock signals for the rows of the array of storage elements based on the memory address received at the address input. Memory operation are performed using storage elements of the array based on the gated-clock signals.

Abstract: A circuit for a communication device and a method for switching a communication device are disclosed. In an embodiment, a method includes activating at least one first antenna and at least one second antenna of a near-field communication (NFC) device for switching the NFC device between first field detection phases and second card detection phases.

Abstract: A method includes dividing a field of view into a plurality of zones and sampling the field of view to generate a photon count for each zone of the plurality of zones, identifying a focal sector of the field of view and analyzing each zone to select a final focal object from a first prospective focal object and a second prospective focal object.

Abstract: A read signal generator generates read signals to control read operations of a memory array. The read signal generator can be selectively controlled to generate an oscillating signal having a period that corresponds to a feature one of the read signals. The oscillating signal is passed to a frequency divider that divides the oscillating signal and provides the divided oscillating signal to an output pad. The frequency of the oscillating signal can be measured at the output pad. The frequency of the oscillating signal, and the duration of the read signal feature can be calculated from the frequency of the oscillating signal. The read signal feature can then be adjusted if needed.

Abstract: An HEMT includes a semiconductor body, which includes a semiconductor heterostructure, and a conductive gate region. The gate region includes: a contact region, which is made of a first metal material and contacts the semiconductor body to form a Schottky junction; a barrier region, which is made of a second metal material and is set on the contact region; and a top region, which extends on the barrier region and is made of a third metal material, which has a resistivity lower than the resistivity of the first metal material. The HEMT moreover comprises a dielectric region, which includes at least one front dielectric subregion, which extends over the contact region, delimiting a front opening that gives out onto the contact region; and wherein the barrier region extends into the front opening and over at least part of the front dielectric subregion.

Abstract: The present disclosure concerns a phase-change memory manufacturing method and a phase-change memory device. The method includes forming a first insulating layer in cavities located vertically in line with strips of phase-change material, and anisotropically etching the portions of the first insulating layer located at the bottom of the cavities; and a phase-change memory device including a first insulating layer against lateral walls of cavities located vertically in line with strips of phase-change material.

Abstract: A method includes receiving a histogram output from a detector sensor, and calculating a median point of a pulse waveform within the histogram. The pulse waveform has an even probability distribution over at least one quantization step of the histogram around the median point. A corresponding apparatus can include a detector sensor and a co-processor coupled to the detector sensor.

Abstract: A memory device includes programmable memory cells and a programming circuit for programming a selected memory cell to a target logic state by applying one or more programming current pulses. A temperature sensor operates to sense a temperature of the memory device. A reading circuit reads a current logic state of the selected memory cell after a predetermined programming current pulse of the programming current pulses. The reading circuit includes a sensing circuit that senses a current logic state of the selected memory cell according to a comparison between a reading electric current depending on the current logic state of the selected memory cell and a reference current. An adjusting circuit adjusts one or the other of the reading electric current and the reference electric current to be provided to the sensing circuit according to the temperature of the memory device.

Abstract: In accordance with an embodiment, a method verifies contents of a plurality of registers having two first registers, where each of the plurality of registers is configured to store a data word and a verification bit. The method includes determining whether a value of the verification bit of each respective register of the plurality of registers corresponds to the data word of its respective register. The data words stored in the two first registers are selected so that the bits of a same rank of the two first registers include two complementary bits, each bit of a common binary word is associated with a respective register of the plurality of registers, and the value of the verification bit of each respective register depends on the data word of the respective register and the bit of the common binary word associated with the respective register.

Abstract: A method includes receiving a video signal that comprises a time series of images of a face of a human, wherein the images in the time series of images comprise a set of landmark points in the face, applying tracking processing to the video signal to reveal variations over time of at least one image parameter at the set of landmark points in the human face, generating a set of variation signals indicative of variations revealed at respective landmark points in the set of landmark points, applying processing to the set of variation signals, the processing comprising artificial neural network processing to produce a reconstructed PhotoPletysmoGraphy (PPG) signal, and estimating a heart rate variability of a variable heart rate of the human as a function of the reconstructed PPG signal.

Abstract: A memory cell that performs in-memory compute operations, includes a pair of cross-coupled inverters and a pair of transistors for selective performance of read/write/hold operations associated with logic states of the pair of cross-coupled inverters. The memory cell further includes a set of transistors that are gate coupled to and symmetrically arranged about the pair of cross coupled inverters. Output nodes of the memory cell are located at terminals of the set of transistors and provide output based on logic states of the pair of cross coupled inverters and input nodes provided between pairs of the set of transistors. A memory cell array may be generated having a high density arrangement memory cells that can perform in-memory compute operations. The memory cells can be arranged as a neural network including a set of memory cell networks that provide logic output operations based on logic states of the respective memory cells.

Abstract: An optical sensor includes pixels. Each pixel has a photodetector. A readout circuit performs a process over an exposure time where the photodetector is connected to a reverse bias voltage supply to reset a voltage across the photodetector, and the photodetector is disconnected from the reverse bias voltage supply until that the voltage across the photodetector decreases in response to received ambient light. An ambient light level is then determine an based on a number of times the voltage across the photodetector is reset over the exposure time.

Abstract: An integrated circuit package includes a support substrate having a front side and a back side and an optical integrated circuit die having a back side mounted to the front side of the support substrate and having a front side with an optical sensing circuit. A glass optical element die has a back side mounted to the front side of the optical integrated circuit die over the optical sensing circuit. The mounting of the glass optical element die is made by a layer of transparent adhesive which extends to the cover the optical sensing circuit and a portion of the front side of the optical integrated circuit die peripherally surrounding the optical sensing circuit. An encapsulation material body encapsulates the glass optical element die and the optical integrated circuit die.

Abstract: A bipolar transistor includes a collector region having a first doped portion located in a substrate and a second doped portion covering and in contact with an area of the first doped portion. The collector region has a doping profile having a peak in the first portion and a decrease from this peak up to in the second portion.

Abstract: Cantilever probes are produced for use in a test apparatus of integrated electronic circuits. The probes are configured to contact corresponding terminals of the electronic circuits to be tested during a test operation. The probe bodies are formed of electrically conductive materials. On a lower portion of each probe body that, in use, is directed to the respective terminal to be contacted, an electrically conductive contact region is formed having a first hardness value equal to or greater than 300 HV; each contact region and the respective probe body form the corresponding probe.