Abstract: The present disclosure is directed to a device configured to detect whether the device is in a bag or outside of the bag. The device determines whether the device is in or outside of the bag based on distance measurements generated by at least one proximity sensor and motion measurements generated by at least one motion sensor. By using both distance measurements and motion measurements, the device is able to detect whether the device is in the bag or outside of the bag with high accuracy and robustness.

Abstract: An optoelectronic device includes an optical integrated circuit having a first surface and a second surface opposite the first surface. The optical integrated circuit has an optical zone of the first surface of the optical integrated circuit. The device includes an electrically insulating material disposed over the optical integrated circuit, where the electrically insulating material partially covers the first surface so as to expose the optical zone.

Abstract: A method for operating a display includes receiving a horizontal synchronization (HSYNC) signal from a display driver of the display, the HSYNC signal including a plurality of pulses; measuring a parameter of the HSYNC signal within a frame; and initiating a touch scan on a touch sensing panel of the display based on the measured parameter.

Abstract: A cryptographic circuit performs a substitution operation of a cryptographic algorithm. For each substitution operation of the cryptographic algorithm, a series of substitution operations are performed by the cryptographic circuit. One of the substitution operations of the series is a real substitution operation corresponding to the substitution operation of the cryptographic algorithm. One or more other substitution operations of the series are dummy substitution operations. A position of the real substitution operation in said series is selected randomly.

Abstract: In an embodiment a method for operating a processing system includes programming, by a microprocessor during a CAN FD Light data transmission phase, a control register of a Serial Peripheral Interface (SPI) communication interface of the processing system in order to activate a master mode; generating, by the microprocessor during the CAN FD Light data transmission phase, a transmission CAN FD Light frame; storing, by the microprocessor during the CAN FD Light data transmission phase, the transmission CAN FD Light frame to a memory; and activating, by the microprocessor during the CAN FD Light data transmission phase a first DMA channel so that the first DMA channel sequentially transfers the transmission CAN FD Light frame from the memory to a transmission shift register in the SPI communication interface.

Abstract: A contactless communication method comprises retro-modulation of a carrier signal received at the terminals of an antenna in an alternation of modulated states and unmodulated states. The modulated state comprises a modulation of a load at the terminals of the antenna at zero impedance, and the transitions from the modulated state to the unmodulated state are controlled at an instant determined by a first delay.

Abstract: An electro-optical phase modulator includes a waveguide made from a stack of strips. The stack includes a first strip made of a doped semiconductor material of a first conductivity type, a second strip made of a conductive material or of a doped semiconductor material of a second conductivity type, and a third strip made of a doped semiconductor material of the first conductivity type. The second strip is separated from the first strip by a first interface layer made of a dielectric material, and the third strip is separated from the second strip by a second interface layer made of a dielectric material.

Abstract: A control circuit includes an output terminal configured to be coupled to a control terminal of a transistor that has a current path coupled to an inductor; a transconductance amplifier configured to produce a sense current based on a current flowing through the current path of the transistor; and a first capacitor. The control circuit is configured to turn on the transistor based on a clock signal, integrate the sense current with an integrating capacitor to generate a first voltage, generate a second voltage across the first capacitor based on a first current, generate a second current based on the second voltage, generate a third voltage based on the second current, turn off the transistor when the first voltage becomes higher than the third voltage; discharge the integrating capacitor when the transistor turns off; and regulate an average output current flowing through the inductor based on the first current.

Abstract: The present disclosure is directed to a device and method for generating and transmitting a TDM signal including both raw data and processed data. The device includes a sensor having a time division multiplexing (TDM) interface. The TDM interface transmits both raw data and processed data in a single TDM signal by reserving one or more slots inside a TDM frame for transmission of the processed data. The sensor also embeds additional information inside a data stream of raw data by repurposing one or more of values of the raw data as an exception code, flag, or another type of notification. The device is also enabled to transmit data, and disabled when not in use in order to conserve power.

Abstract: A method and apparatus for performing dynamic current scaling of an input current of a voltage regulator are provided. The method and apparatus allow tuning current consumption in various applications, calculating a duration of an activity phase in which various algorithms are executed and activating dynamic current scaling of a regulator if the activity duration is shorter than a programmable threshold. A controller receives a threshold for an activity duration and a window size in which to evaluate the activity duration.

Abstract: An HS switching transistor is coupled between a high-side node and a switching node. An LS switching transistor is coupled between the switching node and a low-side node. An inductive load is coupled to the switching node in a way where one of the HS/LS switching transistors is freewheeling. In response to detection of a short circuit occurring at the switching node with the freewheeling switching transistor in the conductive state: an electrical signal at the switching node is sensed, a comparison is made between the sensed electrical signal and a threshold level, and a driving signal is provided to control freewheeling switching transistor to switch to the non-conductive state when the comparison indicates that the electrical signal has reached the threshold level.

Abstract: A semiconductor die is attached on a die-attachment portion of a planar substrate. A planar electrically conductive clip in mounted onto the semiconductor die. The semiconductor die is sandwiched between the die-attachment portion and the electrically conductive clip. A distal portion of the electrically conductive clip extending away from the semiconductor die is spaced from an electrically conductive lead of the planar substrate by a gap. This gap is filled by a mass of gap-filling material transferred to an upper surface of the electrically conductive lead via Laser Induced Forward Transfer (LIFT) processing. A mass of the gap-filling material is sized and dimensioned to substantially fill the gap.

Abstract: An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.

Abstract: Various embodiments provide an optical lens that includes wafer level diffractive microstructures. In one embodiment, the optical lens includes a substrate, a microstructure layer having a first refractive index, and a protective layer having a second refractive index that is different from the first refractive index. The microstructure layer is formed on the substrate and includes a plurality of diffractive microstructures. The protective layer is formed on the diffractive microstructures. The protective layer provides a cleanable surface and encapsulates the diffractive microstructures to prevent damage and contamination to the diffractive microstructures. In another embodiment, the optical lens includes a substrate and an anti-reflective layer. The anti-reflective layer is formed on the substrate and includes a plurality of diffractive microstructures.

Abstract: An embodiment method for estimating a missing or incorrect value in a table of values generated by a photosite matrix comprises a definition of a zone of the table comprising the value to be estimated and other values, referred to as neighboring values, and an estimation of the value to be estimated based on the primary neighboring values and the weight associated with these primary neighboring values, wherein a weight of each neighboring value, referred to as primary neighboring value, of the same colorimetric component as that of the missing or incorrect value to be estimated, is determined according to differences between neighboring values disposed on an axis and neighboring values disposed parallel with this axis and positioned in relation to this axis on the same side as the primary neighboring value for which the weight is determined.

Abstract: A sensor has plurality of pixels arranged in a plurality of rows and columns with row control circuitry for controlling which one of said rows is activated and column control circuitry for controlling which of said pixels in said activated row is to be activated. The column circuitry has memory configured to store information indication as to which of the pixels are defective, wherein each of the pixels has a photodiode and a plurality of transistors which control the activation of the photodiode. A first transistor is configured to be controlled by a column enable signal while a second transistor is configured to be controlled by a row select signal.

Abstract: An integrated circuit comprises a memory device including at least one memory point having a volatile memory cell and a single non-volatile memory cell coupled together to a common node.

Abstract: A MEMS optical device having an optically active portion and an actuation portion adjacent to each other. The MEMS optical device includes a body, a piezoelectric actuator, and a cap. The body is formed by a substrate, housing a cavity containing a fluid and by a deformable region fixed to the substrate, suspended over the cavity and forming a membrane. The piezoelectric actuator extends on the deformable region at the actuation portion and is protected by the cap, which is coupled to the body at the actuation portion and defines a chamber that houses the piezoelectric actuator.

Abstract: The present description concerns a ROM including at least one first rewritable memory cell.

Abstract: A non-conductive encapsulation cover is mounted on a support face of a support substrate to delimit, with the support substrate, an internal housing. An integrated circuit chip is mounted to the support substrate within the internal housing. A metal pattern is mounted to an internal wall of the non-conductive encapsulation cover in a position facing the support face. At least two U-shaped metal wires are provided within the internal housing, located to a side of the integrated circuit chip, and fixed at one end to the metallic pattern and at another end to the support face.