Abstract: A distance sensor has a capacitive element in turn having a first capacitor plate which is positioned facing a second capacitor plate whose distance is to be measured. In the case of fingerprinting, the second capacitor plate is defined directly by the skin surface of the finger being printed. The sensor comprises an inverting amplifier, between the input and output of which the capacitive element is connected to form a negative feedback branch. By supplying an electric charge step to the input of the inverting amplifier, a voltage step directly proportional to the distance being measured is obtained at the output.

Abstract: In capacitive sensor circuits where physical contact is required and excess pressure may be inadvertently applied to the sensor surface, aluminum is not sufficiently hard to provide “scratch” protection and may delaminate, causing circuit failure, even if passivation integrity remains intact. Because hard passivation layers alone provide insufficient scratch resistance, at least the capacitive electrodes and preferably all metallization levels within the sensor circuit in the region of the capacitive electrodes between the surface and the active regions of the substrate are formed of a conductive material having a hardness greater than that of aluminum. The selected conductive material preferably has a hardness which is at least as great as the lowest hardness for any interlevel dielectric or passivation material employed.

Abstract: Acoustic emission samples for a chemical mechanical polishing process are acquired and analyzed using a Fourier transform to detect wafer vibrations characteristic of scratching. When excess noise levels are detected at frequencies or within frequency bands being monitored, the polishing process is halted and an alarm is generated for the operator. Such in-situ detection minimizes damage to the wafer being polished and limits the damage to a single wafer rather than a run of wafers. Polish endpoint detection may be integrated within the scratch detection mechanism.

Abstract: A method and a computing system compute an incremental checksum corresponding to a data packet. The incremental checksum is computed within one processor cycle of a processor. A first register (102) stores first checksum information corresponding to a data packet. A second register (104) stores second checksum information corresponding to old information being deleted from the data packet. A third register (106) stores third checksum information corresponding to new information being added to the data packet. An incremental checksum circuit (100), electrically connected to the first register (102), to the second register (104), and to the third register (106), provides resulting checksum information corresponding to the data packet after deleting the old information from the data packet and adding the new information to the data packet. The resulting checksum information is selectively stored in the first register (102).

Abstract: A method and a bit counting device (100) count bits set to one in a data word of arbitrary size. The bit counting device (100) includes a first data register (110) for storing a data word, an offset register (112) for storing an offset value, a second data register (120), and a one-cycle shifter (114), electrically connected to the first data register (110), to the second data register (120), and to the offset register (112), for shifting the data word by a value stored in the offset register (112) and storing the shifted data word in the second data register (120).

Abstract: A field-effect transistor and a method for its fabrication is described. The transistor includes a monocrystalline semiconductor channel region overlying and epitaxially continuous with a body region of a semiconductor substrate. First and second semiconductor source/drain regions laterally adjoin opposite sides of the channel region and are electrically isolated from the body region by an underlying first dielectric layer. The source/drain regions include both polycrystalline and monocrystalline semiconductor material. A conductive gate electrode is formed over a second dielectric layer overlying the channel region. The transistor is formed by patterning the first dielectric layer to selectively cover a portion of the substrate and leave an exposed portion of the substrate.

Abstract: The present invention is a temperature sensor which is based on the actual temperature coefficients of a device in the circuit, rather than a predetermined threshold voltage that varies across different devices. This temperature sensor includes a circuit which determines the temperature of a device. More particularly, CMOS circuit is provided which uses a current source to generate charge and discharge voltages applied to a capacitor. These voltages are dependent on the temperature coefficient of a resistor in the current source. The charge and discharge times are then used to determine a frequency which is dependent on the temperature coefficient of the resistor. Thus, the temperature is sensed based on the output frequency of the circuit. Additionally, the present invention includes a mechanism which allows the temperature sensor to be activated or deactivated as needed.

Abstract: A dynamic random access memory (DRAM) includes a bit line pair, including a first bit line and a second bit line. Memory cells and a sense amplifier are coupled to the bit lines. A first characterization cell is coupled between the first bit line and a first reference supply line. The first characterization cell includes a capacitor. Similarly, a second characterization cell is coupled between the first bit line and the first reference supply line. The second characterization cell also includes a capacitor but preferably with a different capacitance. In the preferred embodiment, similar characterization cells are coupled to the second bit line.

Abstract: A micro-controller is connected between a hardware-based adaptive differential pulse code modulation (ADPCM) decoder and a read only memory (ROM) storing both micro-controller programming instructions and ADPCM encoded source file data. A micro-controller architecture implements time multiplexed ROM addressing driven by a two phase clock signal. In an instruction phase, a program counter supplies ROM address(es) for retrieving micro-controller programming instructions. In a decoder phase, an address counter supplies ROM address (es) for retrieving portions of the ADPCM encoded source file data. ADPCM encoded source file data extracted from the ROM in the decoder phase of the clock signal is delivered to the decoder for processing during the subsequent instruction phase of the clock signal. The selection between program counter and address counter supplied addresses for application to the ROM is made by a two phase clock signal driven multiplexer.

Abstract: A device for generating synchronous numeric signals, including a reference generating device supplying a reference signal and a first timing signal, both having a reference frequency; and a timed generating device supplying a synchronized signal having the reference frequency. The device further includes a synchronization stage generating a second timing signal having a first controlled frequency correlated to the reference frequency, and phase synchronization pulses having the first frequency and a preset delay programmable with respect to the first timing signal.

Abstract: A radiation hardened memory device having static random access memory cells includes active gate isolation structures to prevent leakage currents between active regions formed adjacent to each other on a substrate. The active gate isolation structure includes a gate oxide and polycrystalline silicon gate layer electrically coupled to a voltage terminal resulting in an active gate isolation structure that prevents a conductive channel extending from adjacent active regions from forming. The gate oxide of the active gate isolation structures is relatively thin compared to the conventional oxide isolation regions and thus, will be less susceptible to any adverse influence from trapped charges caused by radiation exposure.

Abstract: For use in a data processor comprising an instruction execution pipeline comprising N processing stages, a system and method of encoding constant operands is disclosed. The system comprises a constant generator unit that is capable of generating both short constant operands and long constant operands. The constant generator unit extracts the bits of a short constant operand from an instruction syllable and right justifies the bits in an output syllable. For long constant operands, the constant generator unit extracts K low order bits from an instruction syllable and T high order bits from an extension syllable. The right justified K low order bits and the T high order bits are combined to represent the long constant operand in one output syllable. In response to the status of op code bits located within a constant generation instruction, the constant generator unit enables and disables multiplexers to automatically generate the appropriate short or long constant operand.

Abstract: The present invention provides a system, method and an apparatus for a digital video processor comprising an error memory and a merge memory, a half pixel filter communicably coupled to the merge memory, a controller communicably coupled to the error memory, the merge memory and the half pixel filter. The present invention also including a sum unit communicably coupled to the error memory. The controller executing one or more instructions to provide motion compensation during video decoding.

Abstract: A low stress, low profile, cavity down wire bond or flip-chip BGA package is formed by injection molding or thermosetting of liquid crystal plastic (LCP) to form a die carrier including a polymer solder grid array (PSGA) of standoff posts formed during molding of the die carrier. The standoff posts are coated with copper during plating of the die carrier, on the surfaces of which conductive traces are etched from the standoff posts into a die cavity, including on the sidewalls of the die cavity, to wire bond sites or small solderable areas at the bottom of the cavity. After mounting of a wire bond or flip-chip integrated circuit die within the die cavity of the die carrier, the packaged integrated circuit is mounted on a main printed circuit board (PCB) substrate utilizing conductive paste to electrically connect the standoff posts to conductive solderable areas on the main PCB substrate.

Abstract: A method and apparatus are disclosed for controlling the operation of a multiphase motor, and particular to spinning the motor from an inactive state to an operable state. The method and apparatus include initially sensing an electrical characteristic of one or more phase windings, such as performing an inductive sense operation. Having sensed values of the electrical characteristic, a determination is made as to whether or not the motor's rotor is spinning. Upon a determination that the rotor is not spinning, a spin-up operation is performed to bring the spin of the rotor to operable spin speeds. On the other hand, upon a determination that the rotor is spinning, a resynchronization operation is performed to synchronize the application of drive signals for the phase windings of the motor to the dynamic position of the rotor.

Abstract: A method and circuit are disclosed for controlling the current level of a differential logic circuit having a current source, input transistors which perform current steering based upon the input to the differential logic circuit, and load transistors. The circuit includes a first transistor that forms a current mirror with the current source, a second transistor coupled to the load transistors so that the operating characteristics of the load transistors substantially match the operating characteristics of the second transistor, and current source circuitry coupled between the first and second transistors. The current level selected in the current source circuitry sets the current level in the differential logic circuit and the resistance of the load transistors so that the output voltage swing of the differential logic circuit stays within an acceptable range of voltages, regardless of the selected current level.

Abstract: A computer system having a memory system where at least some of the memory is designated as shared memory. A transaction-based bus mechanism couples to the memory system and includes a cache coherency transaction defined within its transaction set. A processor having a cache memory is coupled to the memory system through the transaction based bus mechanism. A system component coupled to the bus mechanism includes logic for specifying cache coherency policy. Logic within the system component initiates a cache transaction according to the specified cache policy on the bus mechanism. Logic within the processor responds to the initiated cache transaction by executing a cache operation specified by the cache transaction.

Abstract: Silver interconnects are formed by etching deep grooves into an insulating layer over the contact regions, exposing portions of the contact regions and defining the interconnects. The grooves are etched with a truncated V- or U-shape, wider at the top than at any other vertical location, and have a minimum width of 0.25 &mgr;m or less. An optional adhesion layer and a barrier layer are sputtered onto surfaces of the groove, including the sidewalls, followed by sputter deposition of a seed layer. Where aluminum is employed as the seed layer, a zincating process may then be optionally employed to promote adhesion of silver to the seed layer. The groove is then filled with silver by plating in a silver solution, or with silver and copper by plating in a copper solution followed by plating in a silver solution.

Abstract: A method of and system for providing user input to a computer, or the like, having a display by detecting a change in fingerprint pattern of a user. The system controls the position of a pointer on a display by detecting motion of ridges and pores of a fingerprint of a user and moving the pointer on the display according to detected motion of the ridges and pores of the fingerprint. The system captures successive images of the fingerprint ridges and pores and detects motion of the ridges and pores based upon the captured successive images.

Abstract: A contact structure provides electrical contact between two polycrystalline silicon interconnect layers. The lower layer has a silicide layer on its upper surface. The upper polycrystalline silicon layer can be doped with a different conductivity type, and makes an ohmic contact with the silicided region of the lower polycrystalline silicon layer.