Abstract: An IC isolation structure includes a recess disposed in a conductive layer having a surface portion. The recess has a side wall adjacent to the surface portion, and the isolation structure also includes an insulator disposed in the recess and overlapping the surface portion. Thus, if a transistor is disposed in the conductive layer adjacent to the recess side wall, the overlapping portion of the insulator increases the distance between the upper recess corner and the gate electrode. This increased distance reduces hump effects to tolerable levels.

Abstract: An LED driver circuit and method are disclosed where an array of light emitting diodes have a transistor connected to each respective array of light emitting diodes. A PWM controller has an input for receiving a voltage reference and an output connected to selected transistors for driving selected transistors and setting a PWM duty cycle for the selected arrays of light emitting diodes to determine the brightness of selected light emitting diodes. An oscillator is connected to the PWM controller for driving the PWM controller.

Abstract: An apparatus (and method) is provided that reduces thermal interference in the read signal of a disk drive. A variable or programmable resistance is used to change the transfer function of a filter in the read channel of the disk drive to filter the read signal. The filter has a first transfer function (first cut-off frequency) related to the programmed resistance during normal operation of the disk drive (i.e. when thermal interference is not detected). When thermal interference is detected in the read signal, the resistance is programmed to another value resulting in the filter having a second transfer function (second cut-off frequency). The resistance element is variable or programmable to different values resulting in different programmable transfer functions (or one of a multitude of cut-off frequencies) for the filter.

Abstract: A circuit and method for performing a stress test on a ferroelectric memory device. The memory device includes a memory cell array having a plurality of row lines, column lines and plate lines. The memory device further includes test circuitry for receiving at least one test control signal and in response to the at least one test control signal allowing a voltage differential to be applied between the column lines and the plate lines, so that a stress voltage may be applied across each of the memory cells at one time.

Abstract: A hard mask, e.g., a silicon dioxide or silicon nitride film, is used to avoid organic polymer materials in copper plasma etch applications. The hard mask would be deposited as a blanket layer on the Cu metal layer and itself be patterned and etched with a conventional photolithographic resist pattern. The hard mask etch is stopped shortly before the Cu surface is exposed. Halting the hard mask etch before the Cu surface is exposed facilitates the use of conventional cleaning processes following the hard mask etch. The remaining thin layer of hard mask can be etched through during the beginning of the Cu metal etch process. Any remaining hard mask deposited on the Cu metal layer can form a part of a new dielectric layer.

Abstract: A method and network device are disclosed using a look-ahead watermark in a FIFO memory. In accordance with the present invention, a watermark interrupt is generated from a FIFO memory when data in the FIFO memory has crossed a watermark threshold. A data burst is transferred through a direct memory access unit to the FIFO memory. A look-ahead watermark flag is checked at the FIFO memory to determine if sufficient memory space exists inside the FIFO memory for an additional data burst, which is transferred through the direct memory access unit to the FIFO memory when the look-ahead watermark flag indicates that sufficient memory space is available.

Abstract: A circuit and method is disclosed for a memory cell for a static random access memory. The memory cell includes a pair of cross-coupled CMOS logic inverters that are connected together to form a latch, and a pair of p-channel transmission gate transistors that are connected to the logic inverters for selectively providing access to the latch. The layout of the memory cell includes a rectangular active area in which the p-channel transistors of the memory cell are located. The rectangular active area abuts a similar active area of an adjacent memory cell along a row of memory cells so as to form a single rectangular active area for the p-channel memory cell transistors. The rectangular active area reduces the occurrence of fabrication-related phenomena that adversely effect the performance of the memory cell.

Abstract: A silicide having variable internal metal concentration tuned to surface conditions at the interface between the silicide and adjoining layers is employed within an integrated circuit. Higher silicon/metal (silicon-rich) ratios are employed near the interfaces to adjoining layers to reduce lattice mismatch with underlying polysilicon or overlying oxide, thereby reducing stress and the likelihood of delamination. A lower silicon/metal ratio is employed within an internal region of the silicide, reducing resistivity. The variable silicon/metal ratio is achieved by controlling reactant gas concentrations or flow rates during deposition of the silicide. Thinner suicides with less likelihood of delamination or metal oxidation may thus be formed.

Abstract: A structure and method for dissipating charges comprising an underlying dielectric layer disposed over capacitor plates of sensor circuitry, and a conductive path and passivation layers disposed over the underlying dielectric layer wherein the conductive pad forms an electrically conductive path over at least a portion of the plates and diffuses electrostatic charges at the surface of the integrated circuit.

Abstract: A system and method for reducing noise using recursive noise level estimation. The system and method for noise reduction substitute a target pixel in a processing window with a weighted average of a plurality of neighboring pixels according to the degree of similarity between the target pixel and the neighboring pixels. The similarity is based on the noise level affecting the image and the local brightness of the processing window. The filter is based on fuzzy logic and filters out noise without smoothing the image's fine details. The filter uses a human visual system (HVS) response to adjust brightness.

Abstract: A detection circuit and a test mode circuit incorporating the detection circuit is disclosed. The detection circuit includes an N-channel transistor having a first source, a first gate, and a first drain, wherein the first drain is connected to a supply voltage. The detection circuit also includes a P-channel transistor having a second source, a second gate, and a second drain, wherein the second source is connected to the first source and the second drain provides an output signal indicative of a supervoltage being applied to the first gate. The test mode circuit also includes a memory access cycle time-out feature override circuit.

Abstract: A method and device is disclosed for generating a local clock signal CLK1X (172) from Universal Synchronous Bus downstream-received differential signals DM and DP carrying the downstream received bit-serial signal. The method and device does not require the use of a crystal or resonator. Counters (312, 310, 305, 301) are used to determine a number of periods of a free-running high frequency clock signal (164) contained within in a known number of bit periods of the downstream received bit-serial signal (146). The counter values are divided by the known number of bit periods of the received bit-serial signal (146) to determine a bit period of the received bit-serial signal (146). The local clock signal (172) may be phase-locked with the received bit serial signal (146). The local clock period is updated on an ongoing manner by downstream known received traffic.

Abstract: A pair of equivalent controlled impedance buffers are connected in a push-pull configuration to a transformer primary coil. A pair of equivalent pre-drivers are connected to the pair of buffers. Each pre-driver receives a driver input signal and outputs a buffer input signal (based on the input signal) and a DC offset compensation signal. Each buffer receives the buffer input signal from its associated pre-driver for buffered output as a line driver signal to the primary coil. Each buffer further receives the DC offset compensation signal generated its pre-driver to compensate for an offset introduced by the transformer. A balanced bridge hybrid is also connected between the buffer output and internal nodes. An adjustment circuit processes the hybrid output during training mode to generate an adjustment signal for application to an adjustable current source within each buffer.

Abstract: An integrated circuit and method are provided for sensing activity such as acceleration in a predetermined direction of movement. The integrated released beam sensor preferably includes a switch detecting circuit region and a sensor switching region connected to and positioned adjacent the switch detecting circuit region. The sensor switching region preferably includes a plurality of floating contacts positioned adjacent and lengthwise extending outwardly from said switch detecting circuit region for defining a plurality of released beams so that each of said plurality of released beams displaces in a predetermined direction responsive to acceleration. The plurality of released beams preferably includes at least two released beams lengthwise extending outwardly from the switch detecting circuit region to different predetermined lengths and at least two released beams lengthwise extending outwardly from the switch detecting circuit region to substantially the same predetermined lengths.

Abstract: An improved vacuum plasma etching device for plasma etching semiconductor wafers that have a photo-resist pattern. The improved plasma etching device has a reaction chamber in which the plasma etching is performed during a process cycle, an entrance vacuum loadlock for holding the next semiconductor wafer to be plasma etched, an exit vacuum loadlock for transporting the semiconductor wafers out of the reaction chamber after the plasma etching process, and a source of ultraviolet light. Exposing the semiconductor wafer to the ultraviolet light cures the photo-resist patterns, thereby improving CD dispersion, enhancing pattern transfer, and preventing photo-resist reticulation. Curing the photo-resist patterns while the semiconductor wafer is being held during the process cycle in the entrance vacuum loadlock, increases efficiency and productivity.

Abstract: An integrated circuit structure and method provides a burn-in stress test mode that facilitates stress testing of an integrated circuit device in a burn-in oven. The integrated circuit structure and method is capable of disabling a time-out feature of an IC memory device during a stress test mode of the device in order to facilitate stress testing of the device in a burn-in oven. The integrated circuit structure provides for entry into the burn-in stress test mode when a supply voltage supplied to the integrated circuit device exceeds a predetermined voltage level and/or the temperature of the integrated circuit device exceeds a predetermined temperature level.

Abstract: A digital-to-analog converter (DAC) having a first sub-DAC for generating a coarse current level based upon the most significant bits of the digital input signal, and a second sub-DAC for generating a fine current level in response to the least significant bits of the digital input signal. The first sub-DAC is segmented, including a plurality of equally-sized current sources and self-calibration circuitry for calibrating the equally-sized current sources concurrently with generating the coarse current level. The second sub-DAC is itself partially segmented, wherein a first portion of the second sub-DAC includes a plurality of equally-sized current sources and a thermometer decoder associated therewith. The second sub-DAC further includes a plurality of binary-weighted current sources. Current levels generated by the first and second sub-DACs are summed to generate an analog equivalent of the digital input signal.

Abstract: A structure and method is disclosed for grounding an electrostatic discharge device of an integrated circuit to dissipate electrostatic charges comprising an underlying dielectric layer disposed over capacitor plates of sensor circuitry and a conductive layer disposed over the underlying dielectric layer, wherein the conductive layer diffuses electrostatic charges at the surface of the integrated circuit to ground. The conductive material not only dissipates electrostatic charges to the ground, but may also protect at least a portion of the edge of the sensor chip from mechanical stress.

Abstract: A method and circuit are disclosed for controlling the write head of a magnetic disk storage device. The circuit includes a pull-up device coupled to a terminal of the write head, for selectively providing a current to the write head through the write head terminal. The circuit further includes parallel-connected current sink circuits, each of which is coupled to the write head terminal and selectively activated to draw current from the write head via the write head terminal. A first transistor is connected in series between the pull-up device and the write head terminal and biased to provide a voltage differential between the write head terminal and the pull-up device. A second transistor is connected in series between the write head terminal and the current sink circuits and biased to provide a voltage differential between the write head terminal and the current sink circuits.

Abstract: A contact is formed within an active region of a substrate at the edge of a die, preferably within the first metallization level in the active region of the substrate. An opening having sloped sidewalls is then etched into the back side of the substrate, exposing a portion of the active region contact. An interconnect is formed on the opening sidewall to connect the active region contact with a die contact pad on the backside surface of the substrate. The active region contact preferably spans a boundary between two die, with the opening preferably etched across the boundary to permit inter-connects on opposing sidewalls of the opening to each contact the active region contact within different die, connecting the active region contact to die contact pads on different dice. The dice are then separated along the boundary, through the active region contact which becomes two separate active region contacts.