Abstract: A method is provided for a planar surface of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A conductive layer is formed over a substrate. A silicon nitride layer is formed over the conductive layer. A photoresist layer is then formed and patterned over the silicon nitride layer. The silicon nitride layer and the conductive layer are etched to form an opening exposing a portion of the substrate. The photoresist layer is then removed. The exposed substrate and a portion of the conductive layer exposed along the sidewalls in the opening are oxidized. An planarizing insulating layer such as spin-on-glass is formed over the silicon nitride layer and in the opening. The insulating layer is etched back to expose the silicon nitride wherein an upper surface of the insulating layer is level with an upper surface of the conductive layer. The silicon nitride layer is then removed. A planar silicide layer is then formed over the conductive layer.

Abstract: A system for processing a floating point instruction includes a stack, virtual registers, a stack pointer pointing to one of the virtual registers as top of stack, physical registers, and a reference table mapping the virtual registers to the physical registers, entries of the reference table pointing to physical register locations. An instruction unit generates a plurality of instructions, and a decode unit having a plurality of decoders receives the plurality of instructions from the instruction unit, respectively. The decode unit decodes the plurality of instructions and determines whether any one of the instructions contains a floating point instruction including a floating point exchange instruction. A logic unit is coupled to the reference table and includes a plurality of logic devices coupled to the plurality of decoders in the decode unit, respectively.

Abstract: A method is provided of forming a small geometry via or contact of a semiconductor integrated circuit, and an integrated circuit formed according to the same, is disclosed. According to a first disclosed embodiment, an opening is formed partially through an insulating layer overlying a conductive region. Sidewall spacers are formed along the sidewalls of the opening. The remaining insulating layer is etched to expose the underlying conductive region. The contact dimension of the opening is smaller than the opening which can be printed from modern photolithography techniques. According to an alternate embodiment, the opening in the insulating layer expose the underlying conductive region. A polysilicon layer is formed over the insulating layer and in the opening. The polysilicon is oxidized to form a thick oxide in the opening and is etched back to form oxidized polysilicon sidewall spacers which decrease the contact dimension of the opening.

Abstract: A circuit for controlling isolation transmission gates connected to the bit lines of a dynamic random access memory (DRAM) device. The circuit includes tri-state circuits which selectively configure transmission gate impedance. The transmission gates are configured for low impedance when stored data is provided to the bit lines. The transmission gates are configured for intermediate impedance when the bit lines are driven towards reference voltage levels. Further, the transmission gates are configured for high impedance to isolate the sense amplifiers from blocks of memory cells that are not involved in the execution of an access to a row of memory cells.

Abstract: A method of operating a memory cell includes detecting a first power supply anomaly or condition. When the first power supply condition occurs, memory cell access to bit lines is disabled, a series of shadow memory access FETs within the memory cells are enabled and data from the memory cells are coupled to memory FETs within the memory cells to store data corresponding to the data from the memory cells in the memory FETs. The memory FETs include nanocrystals of semiconductor material in gate dielectrics of the FETs. Electrons are stored in the nanocrystals of semiconductor material to represent the data stored in the memory cell. When a second power supply condition is detected, the data stored in the memory FETs are written back to the memory cells.

Abstract: A voltage regulator which has two regulation circuits and a comparator for controlling the two regulation circuits is disclosed. The input of the comparator is connected to a power supply voltage such that the output of the comparator changes states when the power supply voltage reaches a predetermined voltage of around 8 volts. The first regulation circuit is enabled to provide the Vcc from the battery voltage until the power supply voltage reaches around 8 volts which is when the comparator changes states. At that point, the first regulation is disabled and the second regulation circuit is enabled to provide the Vcc voltage from the power supply voltage. Since the power supply voltage never reaches the load dump high voltages, the second pass transistors never gets exposed to a high voltage condition. Also, the first transistor can withstand higher voltages since its base is grounded.

Abstract: This invention is a method for boosting the voltage level of a wordline in a DRAM having bitlines, sense amplifiers, isolation devices, bitline loads, an X decoder device and a Y select device. In the preferred method, when the wordline level reaches VDD, the decoder is disabled causing the wordline to stay at the VDD level. The sensing amplifier is also caused to be isolated so as to allow the wordline voltage to track the bitline voltage through capacitive coupling across the access MOSFET of the memory cell being read or written to. As a result, the wordline voltage is increased to a supervoltage as the bitline voltage increases. After the supervoltage is reached on the wordline, the sensing amplifier is connected causing feedback from the amplifier to drive the wordline voltage toward the VDD level and the disabled bit toward GND during this time. At the end of the wordline clock signal, the voltage is at GND and each of the bitlines are returned to their neutral mid-voltage level.

Abstract: A read/write head in a recording and retrieval system and method of operating the read/write head are disclosed. The read/write head contains two inductive sections coupled to a switch. During a read operation, the switch is open connecting the sections in series and maximizing the inductance of the read/write head to produce a better read operation. During a write operation the switch is closed connecting the sections are in parallel to reduce the inductance of the read/write head to produce a better write operation. The switch is controlled by the R/W.sub.-- signal of the recording and retrieval system. The inductance of the inductive sections can be modified to optimize the read and write operations.

Abstract: A method of stress testing a DRAM such that higher voltages of up to the supply voltage VDD may be applied to the oxide of memory cell capacitors. The DRAM is driven into a stress test mode when the sense amplifiers have been isolated, the precharge voltage and the half bitlines have been grounded, and the word line boost circuitry has been disabled or set to operate at a lower voltage level. These conditions allow the memory cell capacitors, isolated from the sense amplifiers and the word line boost circuitry, to be stress tested independently at a lower power supply and word line voltage levels than are used to stress test conventional DRAMs. The memory cell oxide stresses are applied at room temperature, in wafer form, in seconds instead of hours, and before the configuration of redundancy elements. The inventive method permits the critical burn-in VDD value to be chosen so as to optimize burn-in of the memory cell capacitors and peripheral CMOS circuitry.

Abstract: A mask is used for lightly doped drain and halo implants in an integrated circuit device. The mask exposes only portions of the substrate adjacent to field effect transistor gate electrodes. Since the halo implant is made only near the transistor channels, where it performs a useful function, adequate device reliability and performance is obtained. Since the halo implant is masked from those portions of the active regions for which it is not necessary, active region junction capacitances are lowered. Such lowered capacitances result in an improved transistor switching speed. The mask used to define the lightly doped drain and halo implant region can be easily formed from a straight forward combination of already existing gate and active area geometries.

Abstract: An integrated circuit and method are provided for sensing activity such as acceleration in a predetermined direction. The integrated released beam sensor preferably includes a switch detecting circuit region and a sensor switching region connected to and positioned adjacent the switch detecting circuit region. The sensor switching region preferably includes a fixed contact layer, remaining portions of a sacrificial layer on the fixed contact layer, and a floating contact on the remaining portions of the sacrificial layer and having only portions thereof directly overlying the fixed contact layer and in spaced relation therefrom in a normally open position and extending lengthwise generally transverse to the predetermined direction so that the floating contact contacts the fixed contact layer responsive to acceleration in the predetermined direction. The floating contact is preferably a released beam which is released by opening a window or removing unwanted portions of the sacrificial layer.

Abstract: A method of reducing the memory required for decompression of a compressed frame by storing frames in a compressed format using DCT compression and decoders for implementing such a method are disclosed. The decoder is coupled to a memory where the frame can be stored. The decoder includes a decoder module having a parser, a block decoder module and a motion compensation engine. The decoder module is coupled to a DCT encoder module, which has an output coupled to the memory. The decoder also includes a stored DCT decoder module, which has an input coupled to the memory, a first output coupled to the motion compensation module and a second output that functions as an output of the decoder. In operation, any prediction frames needed for motion compensation decompression of the compressed frame are decompressed in the stored DCT decoder module. The compressed frame is decompressed in the decoder module to obtain a decompressed frame.

Abstract: A method of a storing a picture in a memory such that bandwidth can be reduced when retrieving an array portion of the picture from the memory, and a memory architecture are disclosed. The memory is subdivided into a plurality of words for storing a picture having rows and columns. The picture is partitioned into two or more stripes each having a predetermined number of columns. The number of bytes in one row of one stripe is equal to the number of bytes in one word, for storing the data in one row of a stripe in one word. For the case of progressive video sequences or images the memory is organized in frame structure. For the case of interlaced video sequences or images, the memory is organized in field structure. For a frame picture to be stored in a frame organized memory or a field picture to be stored in a field organized memory, the data in the first row of one of the stripes is stored in a first word.

Abstract: Electro-static-discharge (ESD) protection circuits are supplied for inhibiting the destruction of buffers, drivers, logic and memory cells in Metal-Oxide-Semiconductor (MOS) devices such as a CMOS device including Static-Random-Access-Memory (SRAM). This is accomplished by tiering diodes adjacent the input of the chip and in certain specific areas internally of the chip (e.g. power supplies etc.) providing bidirectional diode protection from over-voltage.

Abstract: An integrated circuit package for direct mounting of an integrated circuit die to a printed circuit board is disclosed. The integrated circuit die includes a silicon sensor that detects changes in external variables, such as providing an image of a human fingerprint. The integrated circuit die has wire bond pads formed along only one side thereof to provide maximum exposure of the top surface area of the silicon sensor. The die is affixed to the printed circuit board and an adhesive surface coating, such as epoxy, is applied to the die and the printed circuit board for sealing the die thereto. The adhesive surface coating is formed from a first bead applied to the printed circuit board to cover at least the ends of the wires bonded to the board and a second bead applied to the first bead and the die to enclose the sides of the die and partially overlap the wire band pads and wires on top surface thereof.

Abstract: Electro-static-discharge (ESD) protection circuits are supplied for inhibiting the destruction of buffers, drivers, logic and memory cells in Metal-Oxide-Semiconductor (MOS) devices such as a CMOS device including Static-Random-Access-Memory (SRAM). This is accomplished by tiering diodes adjacent the input of the chip and in certain specific areas internally of the chip (e.g. power supplies etc.) providing bidirectional diode protection from over-voltage.

Abstract: A method is provided for forming a landing pad of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A plurality of conductive regions are formed over a substrate. A polysilicon landing pad is formed over at least one of the plurality of conductive regions. After the polysilicon is patterned and etched to form the landing pad, tungsten is then selectively deposited over the polysilicon to form a composite polysilicon/tungsten landing pad which is a good etch stop, a good barrier to aluminum/silicon interdiffusion and a good conductor.

Abstract: A method of forming an isolation region in an integrated circuit and an integrated circuit formed thereby. A method preferably includes forming at least one trench in a semiconductor substrate, forming an insulation layer of material in the at least one trench and on peripheral regions of the at least one trench of the semiconductor substrate, forming a sacrificial layer of material on the insulation layer having a different polishing rate than the insulation layer, and polishing the layer having the different polishing rate and portions of the insulation layer so that the sacrificial layer having the different polishing rate and portions of the insulation layer are removed, so that other portions of the insulation layer remain in the at least one trench of the substrate, and so that the upper surface of the at least one trench and the peripheral regions thereof in combination provide a substantially planar surface.

Abstract: An improved processing technique results in a structure which maximizes contact area by eliminating a sidewall spacer used to form LDD regions. A sacrificial spacer is provided during processing to form the LDD regions, and is then removed prior to further processing of the device. A sidewall spacer is then formed in a self-aligned contact from a later deposited oxide layer used as an interlevel dielectric. This leaves only a single oxide sidewall spacer alongside the gate electrode, maximizing the surface area available for the self-aligned contact itself.

Abstract: A method and apparatus for testing a random access memory device, such as a dynamic random access memory device embedded within an integrated circuit chip. The apparatus includes one or more rows of transistors, each of which is connected to a bit line pair of the memory device and to a data line. Data is placed onto the bit lines by driving the data line to a predetermined voltage level and turning on the transistors in the transistor row. Data placed on the bit lines forms a test pattern that may be subsequently written into any row of memory cells. By directly controlling the bit lines of the memory device in this way, test patterns may be quickly and easily stored in the memory device for functional verification thereof.