Abstract: Binary words are converted between a non-encoded format and a compressed encoded format, in which the binary words are, at least in part, represented by encoded bit sequences that are shorter than the respective binary word in the non-encoded format. The shortest encoded bit sequences are selected according to the statistical recurrence of the respective words in the non-encoded format, and associated with the binary words with higher recurrence are encoded bit sequences comprising bit numbers that are accordingly smaller. The correspondence between binary words in non-encoded format and the encoded bit sequences associated to them is established by means of indices of an encoding vocabulary. The conversion process includes: arranging the indices in an ordered sequence; organizing the sequence into groups of vectors; splitting each group into a given number of vectors; and encoding the vectors independently from one another.

Abstract: The circuit for generating reference voltages for reading a multilevel memory cell includes the following: a first memory cell and a second memory cell respectively having a first reference programming level and a second reference programming level; a first reference circuit and a second reference circuit respectively connected to said first and said second memory cells and having respective output terminals which respectively supply a first reference voltage and a second reference voltage; and a voltage divider having a first connection node and a second connection node respectively connected to the output terminals of the first reference circuit and of the second reference circuit to receive, respectively, the first reference voltage and the second reference voltage, and a plurality of intermediate nodes supplying respective third reference voltages at equal distances apart.

Abstract: A VLSI architecture adapted to be implemented in the form of a reusable IP cell and including a motion estimation engine, configured to process a cost function and identify a motion vector which minimizes the cost function, an internal memory configured to store the sets of initial candidate vectors for the blocks of a reference frame, first and second controllers to manage the motion vectors and manage an external frame memory, a reference synchronizer to align, at the input to the estimation engine, the data relevant to the reference blocks with the data relevant to candidate blocks coming from the second controller, and a control unit for timing the units included in the architecture and the external interfacing of the architecture itself.

Abstract: A method of fabricating a MOS transistor with a controllable and modulatable conduction path through a dielectric gate oxide is disclosed, wherein the transistor structure comprises a dielectric oxide layer formed between two silicon plates, and wherein the silicon plates overhang the oxide layer all around to define an undercut having a substantially rectangular cross-sectional shape. The method comprises the steps of: chemically altering the surfaces of the silicon plates to have different functional groups provided in the undercut from those in the remainder of the surfaces; and selectively reacting the functional groups provided in the undercut with an organic molecule having a reversibly reducible center and a molecular length substantially equal to the width of the undercut, thereby to establish a covalent bond to each end of the organic molecule.

Abstract: An electronic memory device monolithically integrated in semiconductor has a low pin count (LPC) serial interface. The memory device includes a memory cell array and associated row and column decode circuits. The memory device also includes a bank of T-latch registers to be addressed and accessed in a test mode for serially loading specific test data therein. The serially loading includes activating a test mode of operation by an address storage block for generating a corresponding signal, enabling the bank of T-latch registers in the device to serially receive a predetermined data set, and loading test data into the T-latch registers by using a LPC serial communication protocol.

Abstract: An electronic device for driving an actuator device for a hard disk and a motor for turning the hard disk, the device having a first driving circuit connected to the rotation motor and integrated in a chip of semiconductor material having a substrate defining a reference-potential region, a second driving circuit integrated in the chip and connected to a first actuation stage of the actuator device, and a third driving circuit integrated in the chip and connected to a second actuation stage of the actuator device. The actuator device supports a read/write transducer of the hard disk. The first actuation stage performs a rough displacement of the read/write transducer, while the second actuation stage performs a finer displacement of the same read/write transducer.

Abstract: The present invention relates to a process for removing post-etch residues or polymers from the surface of semiconductor devices which comprises treating the semiconductor device with an aqueous ammonia or ammonium hydroxide solution, optionally containing ozone for a time sufficient to effectively remove said post-etch residues or polymers from the surface of the semiconductor device and rinsing the semiconductor device with ozonized water, i.e. water enriched with ozone, in which water is preferably deionized (ozone-DIW).

Abstract: A method of operating an SAR-type analog-to-digital converter to match the dynamic range of an input voltage signal to be converted with the full scale range of the converter, the converter including at least one array of binary weighted capacitors. The method includes the step of obtaining a digital gain code that represents the ratio between the full scale range and the dynamic range of the voltage signal to be converted, applying the voltage signal to be converted to the capacitor array so as to charge with the voltage signal to be converted only those array capacitors having the same binary weights as the bits of the gain code that have a selected binary value, and selectively coupling the capacitors of the array to one of a first and second predetermined reference voltage terminals according to an SAR technique, to obtain an output digital code corresponding to the input voltage signal.

Abstract: A negative charge pump circuit includes a cascade connection of a plurality of charge pump stages, each stage including at least a charge capacitance and a pass transistor driven by a corresponding phase signal. An input stage may be coupled to an input reference potential. An output stage may include an output terminal for generating a first pumped voltage. In addition, the charge pump circuit may further include a second output stage connected downstream to the input stage and including a second output terminal for generating a second pumped potential. The architecture may also be implemented in positive charge pump circuits.

Abstract: A line selector for a matrix of memory elements, for example a word line selector, comprises a plurality of line group selection circuits, each one allowing the selection of a respective group of matrix lines according to an address; each matrix line group includes at least one matrix line. Flag means are associated with each line group, that can be set to declare a pending status of a prescribed operation, for example an erase operation, for the respective matrix line group. Means are provided for entrusting the flag means with the selection of the respective line group during the execution of the prescribed operation, in alternative to the respective line group selection circuit. The flag means enable, when set, the execution of the prescribed operation on the respective matrix line group.

Abstract: A process for the manufacturing of an integrated circuit including a low operating voltage, high-performance logic circuitry and an embedded memory device having a high operating voltage higher than the low operating voltage of the logic circuitry, providing for: on first portions of a semiconductor substrate, forming a first gate oxide layer for first transistors operating at the high operating voltage; on second portions of the semiconductor substrate, forming a second gate oxide layer for memory cells of the memory device; on the first and second gate oxide layers, forming from a first polysilicon layer gate electrodes for the first transistors, and floating-gate electrodes for the memory cells; forming over the floating-gate electrodes of the memory cells a dielectric layer; on third portions of the semiconductor substrate, forming a third gate oxide layer for second transistors operating at the low operating voltage; on the dielectric layer and on the third portions of the semiconductor substrate, formin

Abstract: A micromachined device made of semiconductor material is formed by: a semiconductor body; an intermediate layer set on top of the semiconductor body; and a substrate, set on top of the intermediate layer. A cavity extends in the intermediate layer and is delimited laterally by bottom fixed regions, at the top by the substrate, and at the bottom by the semiconductor body. The bottom fixed regions form fixed electrodes, which extend in the intermediate layer towards the inside of the cavity. An oscillating element is formed in the substrate above the cavity and is separated from top fixed regions through trenches, which extend throughout the thickness of the substrate. The oscillating element is formed by an oscillating platform set above the cavity, and by mobile electrodes, which extend towards the top fixed regions in a staggered way with respect to the fixed electrodes. The fixed electrodes and mobile electrodes are thus comb-fingered in plan view but formed on different levels.

Abstract: Sensing circuitry for reading and verifying the contents of electrically programmable and erasable non-volatile memory cells, comprises a sense amplifier having a first sensing circuit portion connected to a cell to be read and provided with an output terminal for connection to a first input terminal of a comparator, and having a second reference circuit portion connected to a reference current generator and provided with an output terminal for connection to a second input terminal of said comparator, characterized in that said first and said second circuit portions comprise a series of first and second transistors, respectively, being connected between a first voltage reference and a second voltage reference and having respective points of interconnection connected to said output terminals of said first and second circuit portions.

Abstract: The microreactor is completely integrated and is formed by a semiconductor body having a surface and housing at least one buried channel accessible from the surface of the semiconductor body through two trenches. A heating element extends above the surface over the channel and a resist region extends above the heating element and defines an inlet reservoir and an outlet reservoir. The reservoirs are connected to the trenches and have, in cross-section, a larger area than the trenches. The outlet reservoir has a larger area than the inlet reservoir. A sensing electrode extends above the surface and inside the outlet reservoir.

Abstract: A method of fabricating electronic devices, integrated monolithically in a semiconductor substrate having at least one non-active area contiguous with at least one device active area, which method comprises at least one step of implanting ions of a noble gas, followed by a thermal treatment to form getter microcavities in the semiconductor by evaporation of the noble gas, wherein the implanting step is carried out in the non-active area of the semiconductor.

Abstract: A circuit device for restoring the symmetry of an analog signal originated by the reading of data from magnetic supports, including at least one differential cell multiplier whose cell includes a pair of input MOS transistors having respective conduction terminals linked together at a circuit node. Advantageously, provided in parallel with each of the cell input transistors, are a plurality of transistors individually connectable to and disconnectable from each of the input transistors by corresponding switches.

Abstract: A multi-output switching power supply may include a PWM regulator circuit arranged in cascade upstream of each output to receive, as an input, a square wave voltage signal with a predetermined duty cycle. The regulator circuit may include an auxiliary switching device for modulating the duty cycle of the input signal to supply, as an output, a regulated direct current voltage. A control circuit for the PWM regulator circuit may include a detector circuit for detecting the trailing edges of the voltage signal input to the regulator circuit which emits a pulse coinciding with each of the trailing edges. The control circuit may also include a ramp signal generator that is controlled by the emitted pulses. The ramp signal generator may be connected to the non-inverting input of a comparator having an inverting input for receiving a signal indicative of the error in the regulator output voltage.

Abstract: A method is provided for detecting a discontinuity in electrical connections of a microchip that includes an input pin connected to a voltage supply line, multiple circuit sections, an output voltage line for connecting the circuit sections to an output pin, and a resistive output divider. According to the method, there is determined a number of electrical connections as a function of the short circuit current for the input and output pins. The voltage supply line is sectioned as a function of the number of electrical connections determined for the input pin, and the sections of the voltage supply line are connected independently to the circuit sections. The output voltage line is sectioned as a function of the number of electrical connections determined for the output pin. As a function of the number of electrical connections determined, the number and value of the resistances of the output divider is increased.

Abstract: Sensing circuitry for reading and verifying the contents of electrically programmable and erasable non-volatile memory cells including a sense amplifier having a first sensing circuit portion connected to a cell to be read and provided with an output terminal for connection to a first input terminal of a comparator, and having a second reference circuit portion connected to a reference current generator and provided with an output terminal for connection to a second input terminal of said comparator, characterized in that said first and said second circuit portions comprise a series of first and second transistors, respectively, being connected between a first voltage reference and a second voltage reference and having respective points of interconnection connected to said output terminals of said first and second circuit portions.

Abstract: An interconnect system includes an arbitration unit for arbitration among a plurality of sources or initiators requesting access to resources or targets. The arbitration unit selectively grants the initiators access to the targets as a function of respective priorities. The system includes a programmable control unit for programmably choosing the priorities in question out of group of at least two different priority schemes including a positional fixed priority, programmed fixed priority, and a variable priority based on a respective threshold latency values associated to the initiators.