Abstract: A variable gain amplifier is described which comprises a first device to which a first control signal (Vc, Vc1) is applied so that the gain (Ai1, Ai) of an output signal (iout, io) of the first device (11, 22, Q45-Q48) with respect to a first input signal (in, i1, ir) is a function of the exponential type of the first control signal (Vc, Vc1). The amplifier comprises a feedback network (25, Q51-Q58) connected between an output terminal and an input terminal of the first device (22, Q45-Q48) so as to assure that the gain (Ai) in decibel of the first device (22, Q45-Q48) is a linear function of the first control signal (Vc1).

Abstract: A process for manufacturing a non-volatile memory cell having at least one gate region, the process including the steps of depositing a first dielectric layer onto a semiconductor substrate; depositing a first semiconductor layer onto the first dielectric layer to form a floating gate region of the memory cell; and defining the floating gate region of the memory cell in the first semiconductor layer. The process further includes the step of depositing a second dielectric layer onto the first conductive layer, the second dielectric layer having a higher dielectric constant than 10. Also disclosed is a memory cell integrated in a semiconductor substrate and having a gate region that has a dielectric layer formed over a first conductive layer and having a dielectric constant higher than 10.

Abstract: A nonvolatile memory device is described comprising a memory array, a row decoder and a column selector for addressing the memory cells of the memory array, and a biasing stage for biasing the array access device terminal of the addressed memory cell. The biasing stage is arranged between the column selector and the memory array and comprises a biasing transistor having a drain terminal connected to the column selector, a source terminal connected to the array access device terminal of the addressed memory cell, and a gate terminal receiving a logic driving signal, the logic levels of which are defined by precise and stable voltages and are generated by a logic block and an output buffer cascaded together. The output buffer may be supplied with either a read voltage or a program voltage supplied by a multiplexer.

Abstract: A digital camera for capturing and processing images of different resolutions and a corresponding method for down-scaling a digital image are provided. The method includes forming an image of a real scene on an image sensor that is made up of a plurality of pixels arranged in a matrix. The method further includes addressing and reading pixels in the matrix to obtain analog quantities related to the pixels luminance values, converting the analog quantities from the pixels matrix into digital values, and processing the digital values to obtain a data file representing the image of the real scene. To reduce computation time and power consumption, the addressing and reading of the pixels includes selecting a group of pixels from the matrix, and storing the analog quantities related to the pixels of the selected group of pixels into an analog storing circuit. The stored analog quantities are averaged to obtain an analog quantity corresponding to an average pixel luminance value.

Abstract: To generate the main scrambling code of order N and the secondary scrambling code of order K within the set identified by the primary scrambling code of order N, a first m-sequence and a second m-sequence are generated using Fibonacci linear feedback shift registers. The first m-sequence and the second m-sequence are modulo-2 added to form the I branch of the primary scrambling code. A first T-bit masking word and a second T-bit masking word of rank 0 are generated that correspond to the polynomial time shifts, and the intermediate taps of the X and y registers respectively chosen by the masking words are modulo-2 added so as to generate a third sequence and a fourth sequence, which are modulo-2 added together to form the Q branch of the primary scrambling code.

Abstract: An electronic device, integrated monolithically in a semiconductor substrate and comprising a bipolar transistor connected in series to at least one MOS transistor, the bipolar transistor having a base region that includes a first buried region and a first diffused region extending continuously from the substrate surface down to the buried region, and the diffused region is bordered by an isolation trench region extending in the buried region.

Abstract: Described herein is a method for storing a datum in a first and a second memory cells of a nonvolatile memory. The storage method envisages programming the first and second memory cells in a differential way, by setting a first threshold voltage in the first memory cell and a second threshold voltage different from the first threshold voltage in the second memory cell, the difference between the threshold voltages of the two memory cells representing a datum stored in the memory cells themselves.

Abstract: A method of filtering noise from digital pictures includes selecting a first set of pixels including the union of a pixel of the current picture to be filtered and a second set of pixels temporally and spatially near the pixel. A certain number of extended sums of values assumed by as many pre-established weight functions of the intensity of a selected video component on the first set of pixels is also calculated. The second set of pixels may belong to the current picture or to a preceding picture. Several noise filters for digital pictures are also provided.

Abstract: A method is for low-dielectric-constant film deposition on a surface of a semiconductor substrate. The deposition may be by chemical vapor deposition (CVD) techniques and may include a wide class of precursor monomeric compounds, namely organosilanes.

Abstract: The invention relates to a process for making a lateral PNP bipolar electronic device integrated monolithically on a semiconductor substrate together with other bipolar devices of the NPN type, said device being incorporated to an electrically insulated multilayer structure. The device includes a semiconductor substrate doped with impurities of the P type; a first buried layer doped with impurities of the N type to form a base region; and a second layer, overlying the first and having conductivity of the N type, to form an active area with opposite collector and emitter regions being formed in said active area and separated by a base channel region. The width of the base channel region is defined essentially by a contact opening formed above an oxide layer deposited over the base channel region. Advantageously, the contact opening is formed by shifting an emitter mask.

Abstract: The cells of the stacked type each comprise a MOS transistor formed in an active region of a substrate of semiconductor material and a capacitor formed above the active region; each MOS transistor has a first and a second conductive region and a control electrode and each capacitor has a first and a second plate separated by a dielectric region material, for example, ferroelectric one. The first conductive region of each MOS transistor is connected to the first plate of a respective capacitor, the second conductive region of each MOS transistor is connected to a respective bit line, the control electrode of each MOS transistor is connected to a respective word line, the second plate of each capacitor is connected to a respective plate line. The plate lines run perpendicular to the bit line and parallel to the word lines. At least two cells adjacent in a parallel direction to the bit lines share the same dielectric region material.

Abstract: Described herein is an asynchronous serial dichotomic sense amplifier comprising a first comparator stage having a first input receiving the cell current flowing in the multilevel memory cell, the content of which is to be read, a second input receiving a first reference current, and an output supplying the first of the bits stored in the multilevel memory cell; a multiplexer stage having a selection input connected to the output of the first comparator stage, a first signal input receiving a second reference current, a second signal input receiving a third reference current, and a signal output selectively connectable to the first or the second signal input depending on the logic level present on the selection input; and a second comparator stage having a first input receiving the cell current, a second input connected to the signal output of the multiplexer stage, and an output supplying the second of the bits stored in the multilevel memory cell.

Abstract: The present invention relates to a digital control circuit of the P.I. (Proportional Integral) type, receiving an error signal (Error) at an input terminal (IN1) and adapted to provide, at an output terminal (OUT1), a PWM [Pulse Width Modulated] output signal (PWM Output). The circuit is of a type comprising at least one analog-to-digital converter (100, 100*) connected to the input terminal (IN) and to the output terminal (OUT1) through at least one integrative/proportional branch (120, 121, 130, 134). Advantageously in this invention, the analog-to-digital converter (100, 100*) is an integration converter adapted to integrate the error signal (Error) before an analog-to-digital conversion thereof.

Abstract: A contact structure, including a first conducting region having a first thin portion with a first sublithographic dimension in a first direction; a second conducting region having a second thin portion with a second sublithographic dimension in a second direction transverse to said first direction; the first and second thin portions being in direct electrical contact and defining a contact area having a sublithographic extension. The thin portions are obtained using deposition instead of lithography: the first thin portion is deposed on a wall of an opening in a first dielectric layer; the second thin portion is obtained by deposing a sacrificial region on vertical wall of a first delimitation layer, deposing a second delimitation layer on the free side of the sacrificial region, removing the sacrificial region to form a sublithographic opening that is used to etch a mold opening in a mold layer and filling the mold opening.

Abstract: A method for generating a random number sequence whose randomness properties are determined a priori, includes defining a parametric map, calculating, in function of parameters of the map, the entropy and the Lyapunov exponent of random number sequences obtainable using the parametric map, and identifying at least a set of values of parameters for which the entropy and the Lyapunov exponent are positive numbers the map has no attracting point. The method further includes assigning a pre-established value as a first feedback value and cyclically carrying out the following steps for generating a random number sequence: determining the parameters inside the set as the numerical values of respective physical quantities, outputting a random number, according to the map with the parameters and the assigned feedback value, and assigning as new feedback value the output random number.

Abstract: A circuit for regulating an output voltage of a charge pump includes a regulator connected to an output of the charge pump. The regulator includes a voltage divider for dividing the output voltage. A filter has a first input for receiving the divided output voltage, a second input for receiving a control signal, and an output for providing a filtered divided output voltage. A comparator has a first input for receiving the divided output voltage, a second input for receiving a reference voltage, a third input for receiving the filtered divided output voltage, and an output for providing a digital signal based upon a comparison of the divided output signal, the reference voltage and the filtered divided output voltage. A logic control circuit has a first input for receiving a clock signal, a second input for receiving the digital signal from the comparator, and an output for providing a timing signal.

Abstract: A method of re-programming an array of non-volatile memory cells after an erase operation is provided where a re-program operation is executed to restore a threshold voltage of the memory cells to a higher value than a depletion verify voltage value. The method may include identifying a first value of the depletion verify voltage, executing the re-program operation using the value of the depletion verify voltage, and verifying the array of re-programmed cells for reliability in a read mode. If the outcome of the verifying step is favorable, the re-program operation is terminated as successful. Otherwise, the value of the depletion verify voltage is modified, and the re-program operation is again executed using the modified value of the depletion verify voltage as adjusted for the actual operating conditions of the memory array.

Abstract: The integrated semiconductor device includes a first chip of semiconductor material having first, high-voltage, regions at a first high-value voltage; a second chip of semiconductor material having second high-voltage regions connected to the first voltage; and a third chip of semiconductor material arranged between the first chip and the second chip and having at least one low-voltage region at a second, low-value, voltage. A through connection region is formed in the third chip and is connected to the first and second high-voltage regions; through insulating regions surround the through connection region and insulate it from the low-voltage region.

Abstract: A full-wave rectifier for monitoring the amplitude of a differential analog signal includes a differential Track&Hold stage controlled by a first differential logic timing signal tracking the differential analog input signal during a tracking phase that corresponds to a high logic stage of the first differential timing signal. This produces a differential output signal that is a replica of the input signal and the signal is stored during a successive storing phase that corresponds to a low logic state of the first differential timing signal. A first differential output amplifier includes inputs coupled to the output of the Track&Hold stage. A differential bistable circuit, controlled by a second differential logic timing signal, includes inputs coupled to the differential outputs of the first amplifier and produces a third differential logic control signal.

Abstract: A basic stage for a charge pump circuit having at least an input terminal and an output terminal and comprising: at least a first inverter inserted between said input and output terminals and comprising a first complementary pair of transistors, defining a first internal node, at least a second inverter inserted between said input and output terminals and comprising a second complementary pair of transistors, defining a second internal node, respective first and second capacitors connected to said first and second internal nodes and receiving a first and second driving signals; the first and second pairs of transistors having the control terminals cross-connected to the second and first internal node. Advantageously, the basic stage comprises at least a first biasing structure connected to the first and second internal nodes and comprising a first and second biasing transistors, which are respectively coupled to said first and second inverters.