Abstract: A vertical structure high carrier mobility transistor on a substrate of crystalline silicon doped with impurities of the N type, the transistor having a collector region located at a lower portion of the substrate. The transistor includes a heterostructure alloy region positioned in the substrate and comprised of a heterostructure alloy of silicon and germanium. A base region is positioned in the substrate above the first conducting region and doped with P-type impurities. A first dielectric layer is positioned on, and directly contacts, the heterostructure alloy region, and defines a first window directly above the heterostructure alloy region. The transistor also includes an emitter positioned in the heterostructure alloy region and between the first window and the base region. The emitter is comprised of the heterostructure alloy doped with impurities of the first type and directly contacts the first dielectric layer.

Abstract: Functions for simulating, burning and controlling integrated fuses of a device are provided by a dedicated circuit which, instead of differing from other circuits, is integrated by sharing part of the registers with the circuit that normally exists to scan test the integrity of the state of the device. The architecture is simplified and only requires an additional pin as compared to a common scan test circuit.

Abstract: The integrated device for microfluid thermoregulation comprises a semiconductor material body having a surface; a plurality of buried channels extending in the semiconductor material body at a distance from the surface of the semiconductor material body; inlet and outlet ports extending from the surface of the semiconductor material body as far as the ends of the buried channels and being in fluid connection with the buried channels; and heating elements on the semiconductor material body. Temperature sensors are arranged between the heating elements above the surface of the semiconductor material body.

Abstract: The reading timing device has a data-sensing stage, receiving a sensing-latch signal, and an output stage, including an output buffer and enabled at a first switching edge of a synchronization signal. A reading timing stage generates the sensing-latch signal not before a preset time interval from the first switching edge of the synchronization signal. Thereby, reading, in particular data-latching in the data-sensing stage, is temporarily separated from switching of the output buffers. This separation is obtained using the sync signal. Since the output buffers must switch in a preset time from the rising edge of the sync signal, the pulse of the sensing-latch signal is shifted after this time, and more precisely after the falling edge of the sync signal.

Abstract: An analog-to-digital conversion method and device for a multilevel non-volatile memory device that includes a multilevel memory cell. The method comprises a first step of converting the most significant bits contained in the memory cell, followed by a second step of converting the least significant bits. The first step is completed within a time interval corresponding to the rise transient of the gate voltage, and the second step is initiated at the end of the transient. Also disclosed is a scheme for error control coding in multilevel Flash memories. The n bits stored in a single memory cell are organized in different “bit-layers”, which are independent from one another. Error correction is carried out separately for each bit-layer. The correction of any failure in a single memory cell is achieved by using a simple error control code providing single-bit correction, regardless of the number of bits stored in a single cell.

Abstract: A method of manufacturing a non-volatile memory device includes depositing a first layer on a semiconductor substrate, and a portion of the first layer is selectively removed to form a memory array area. A second layer is deposited on the memory array area and on adjacent areas of the semiconductor substrate contacting the memory array area. The second layer has a thickness that is substantially equal over the memory array area and over the adjacent areas. The method further includes forming a screening layer on the second layer on the adjacent areas except for outer peripheral portions thereof adjacent the memory array area. The thickness of the second layer exposed on the memory array area and on the outer peripheral portions of the adjacent areas is reduced so that a resulting thickness is less than a thickness of the first layer.

Abstract: A method of stabilizing an image sequence, said method comprising the following phases: estimating a first global motion vector comprising a first motion component in a predetermined direction that has associated with it a first respective amplitude and a first respective direction, said first vector being representative of the motion with respect to a reference image of a first image consisting of a pixel matrix, associating said first component with either a wanted motion or an unwanted motion, compensating said first component when it is associated with an unwanted motion, characterized in that the association phase comprises a phase of comparing the first amplitude of said component with a threshold compensation value 1 T comp hor

Abstract: A bipolar transistor is produced by processes employed in the manufacture of CMOS nonvolatile memory devices, and is part of an integrated circuit. The integrated circuit includes a semiconductor substrate having a first type of conductivity, a PMOS transistor formed in said substrate, an NMOS transistor formed in said substrate, and the bipolar transistor.

Abstract: A method of forming buried cavities in a wafer of monocrystalline semiconductor material with at least one cavity formed in a substrate of monocrystalline semiconductor material by timed TMAH etching silicon; covering the cavity with a material inhibiting epitaxial growth; and growing a monocrystalline epitaxial layer above the substrate and the cavities. Thereby, the cavity is completely surrounded by monocrystalline material. Starting from this wafer, it is possible to form a thin membrane. The original wafer must have a plurality of elongate cavities or channels, parallel and adjacent to one another. Trenches are then excavated in the epitaxial layer as far as the channels, and the dividers between the channels are removed by timed TMAH etching.

Abstract: The self-repair method for a nonvolatile memory intervenes at the end of an operation of modification, selected between programming and erasing, in the event of detection of just one non-functioning cell, and carries out redundancy of the non-functioning cell. To this end, the memory array is divided into a basic portion, formed by a plurality of memory cells storing basic data, and into a in-the-field redundancy portion, said in-the-field redundancy portion being designed to store redundancy data including a correct content of the non-functioning cell, the address of the non-functioning cell, and an activated redundancy flag. The redundancy is activated only after applying a preset maximum number of modification pulses and uses a purposely designed redundancy replacement circuit and a purposely designed redundancy data verification circuit.

Abstract: A reading circuit for a memory includes a current detector for each bit line of the memory, a reference voltage generator, and a comparator that compares the reference voltage with the voltage of a reading terminal of the current detector. Each current detector includes a first transistor whose gate is selectively connected to the reading terminal, and whose drain-source path is in series with a respective bit line. An input of a first inverter stage is connected to the source of the first transistor, and an output thereof is connected to the gate of the first transistor. The circuit has a very short reading time based upon each of the current detectors including a first resistor between the source of the first transistor and the bit line, along with second and third transistors having their drain-source paths connected in series with the respective bit line, and along with second and third inverters connected to the respective bit line.

Abstract: It is described a programming method for a multilevel memory cell able to store a plurality of bits in a plurality of levels. The method comprises the phases of: initially programming a cell threshold value to a first set of levels [0;(m−1)] being m a submultiple of the plurality of levels of the multilevel cell; reprogramming without erasing another set of levels [m;(2m−1)] containing the same number m of levels as the first set; reiterating the reprogramming without erasing phase until the levels of the multilevel cell are exhausted. It is also described a multilevel memory device of the type comprising a plurality of multilevel memory cells organized into sectors, the sectors being themselves split into a plurality of data units wherein a data updating operation is performed in parallel, the data units being programmed by means of the programming method.

Abstract: A method of fabricating or designing a control unit for electronic microcontrollers or microprocessors that includes fabricating a finite state machine having at least one combinatorial network, the finite state machine having a plurality of control sub-units, each structured to correspond to one combinatorial logic network. Each unit in the plurality of control sub-units is independently connected to an arbitration block to provide information about a possible future state and receive a present state command.

Abstract: Method for refreshing data stored in an electrically erasable and programmable non-volatile semiconductor memory including at least one two-dimensional array of memory cells containing a plurality of individually erasable and programmable memory pages. Each time a request to modify a content of a memory page is received by the memory, the method provides for modifying the content of said memory page and submitting a portion of the two-dimensional array to a refresh procedure. The refresh procedure includes detecting memory cells of that memory portion that have partially lost a respective datum stored therein and reprogramming the datum in the detected memory cells.

Abstract: A circuit device generates a signal proportional to the current circulating in an inductor and a current comparator, which is disabled by a stand-by signal, and is input with a feedback signal and with a signal proportional to the current circulating in the inductor and generates a logic comparison signal. A control logic, input with a logic comparison signal and the stand-by signal, drives the switch or the switches of a power stage. A clamp, connected in parallel to a capacitive branch, makes the feedback signal greater than a certain minimum threshold, to make the current that is delivered to the load, when the regulator is not in the stand-by state, greater than a certain minimum current.

Abstract: The method for using a nonvolatile memory having a plurality of cells, each of which stores a datum, is based upon the steps of performing an modification operation of erasing/programming the data of the memory; verifying the correctness of the data of the memory cells; and, if the step of verifying has revealed at least one incorrect datum, correcting on-the-field the incorrect datum, using an error correcting code. The verification of the correctness of the data is performed by determining the number of memory cells storing an incorrect datum; if the number of memory cells storing the incorrect datum is less than or equal to a threshold, the erroneous datum is corrected by the error correction code; otherwise, new erasing/programming pulses are supplied.

Abstract: The phase change memory cell is formed by a resistive element and by a memory region of a phase change material. The resistive element has a first thin portion having a first sublithographic dimension in a first direction; and the memory region has a second thin portion having a second sublithographic dimension in a second direction transverse to the first dimension. The first thin portion and the second thin portion are in direct electrical contact and define a contact area of sublithographic extension. The second thin portion is delimited laterally by oxide spacer portions surrounded by a mold layer which defines a lithographic opening. The spacer portions are formed after forming the lithographic opening, by a spacer formation technique.

Abstract: A method for manufacturing a MOS transistor integrated into a chip of semi-conductive material comprising a first and a second active region which extend from the inside of the chip to a surface of the chip. The method comprises the steps of: a) forming a layer of insulating material on the surface of the chip and depositing a layer of conductive material on said insulating layer, b) defining an insulated gate electrode of the transistor, from said superimposed insulating and conductive layers, c) defining, from said superimposed insulating and conductive layers, an additional structure arranged on a first surface portion of the first active region, and d) placing between the insulated gate electrode and the additional structure a dielectric spacer placed on a second surface portion of the first active region.

Abstract: A memory device comprises a plurality of banks of storage locations accessible in response to access requests. Data refresh means are provided for refreshing data stored in the storage locations within prescribed times, whereby the memory device autonomously perform a refresh. A cache memory is embedded in the memory device. The cache memory has a plurality of cache storage locations for storing data contained in recently accessed storage locations. Access control means control the access to the storage locations and to the cache storage locations in response to the access requests: an access request is diverted to the cache memory whenever access to anyone of the recently accessed storage locations is requested. Any cache storage location is freely associable to any storage location in any bank, the association between any cache storage location and a storage location in the plurality of banks being established by a storage location association table in the access control means.

Abstract: A device for generating synchronous numeric signals, including a reference generating device supplying a reference signal and a first timing signal, both having a reference frequency; and a timed generating device supplying a synchronized signal having the reference frequency. The device further includes a synchronization stage generating a second timing signal having a first controlled frequency correlated to the reference frequency, and phase synchronization pulses having the first frequency and a preset delay programmable with respect to the first timing signal.