Abstract: A pull-up circuit for input/output terminals of electronic appliances is disclosed. The circuit is arranged between an input/output terminal and a supply voltage terminal and includes a first transistor and a resistance serially connected and coupled between the input/output terminal and the supply-voltage terminal and circuitry suitable for driving the transistor so as to switch it on or off depending on whether the values achieved by the voltage of the input/output terminal belong or do not belong to a set range of voltage values within the supply-voltage value.

Abstract: A dynamic or non-volatile memory with a differential reading system with improved load rebalancing comprising a rebalancing circuit that for values of the supply and memory selection voltage in excess of a predetermined reference voltage modifies one or the other of two currents, i.e., the measuring current or the reference current, with an equivalent effect on the load rebalancing.

Abstract: A multipurpose interlaced memory device functions in two different modes, synchronous and asynchronous. The memory uses a circuit for detecting address transitions by acting as a synchronous clock of the system for letting the control circuit of the memory device recognize the required access mode by enabling a comparison of the currently input external address with the one stored in the address counters of the two banks of memory cells. The memory device includes a buffer for outputting data. The buffer includes a circuit for pre-charging the output nodes to an intermediate voltage between the voltages corresponding to the two possible logic states, thus reducing noise and improving transfer time.

Abstract: A transistor includes a substrate region (14) of a first type (P) of conductivity in a semiconductor material layer of the same type (P) of conductivity, at least a first contact region (13) of the first type (P+) of conductivity inside the substrate region (14) and adjacent to a first terminal (C) of the transistor, a well (11) of second type (N) of conductivity placed inside the substrate region (14), wherein the well (11) of second type (N) of conductivity includes at least a second contact region (12) of a second type of conductivity (N+) adjacent to a region of a second terminal (B) of the transistor, and a plurality of third contact regions (10) of the first type of conductivity (P+) adjacent to a plurality of regions of a third terminal (E1, . . . , E3) of the transistor interposed each one (10) and other (12) by proper insulating shapes (20).

Abstract: An integrated gyroscope, including an acceleration sensor formed by: a driving assembly; a sensitive mass extending in at least one first and second directions and being moved by the driving assembly in the first direction; and by a capacitive sensing electrode, facing the sensitive mass. The acceleration sensor has an rotation axis parallel to the second direction, and the sensitive mass is sensitive to forces acting in a third direction perpendicular to the other directions. The capacitive sensing electrode is formed by a conductive material region extending underneath the sensitive mass and spaced therefrom by an air gap.

Abstract: A method for programming a non-volatile memory device of the multi-level type, includes a plurality of transistor cells grouped into memory words and conventionally provided with gate and drain terminals. The method applies different drain voltage values at different threshold values. Such values are directly proportional to the threshold levels to be attained by the individual memory word bits, and effective to provide for a simultaneous attainment of the levels, in a seeking-to manner, of the levels at the end of a limited number of pulses. Advantageously, a constant gate voltage value is concurrently applied to the gate terminals of said cells, such that the cell programming time is unrelated to the threshold level sought.

Abstract: PN junction structure including a first junction region of a first conductivity type, and a second junction region of a second conductivity type, wherein between said first and second junction regions a grid of buried insulating material regions is provided.

Abstract: The high-voltage resistor is of the vertical type, and is formed in a chip which includes a high-voltage region and a low-voltage region superimposed on the high-voltage region, both having a first conductivity type. An isolation region, at least partially buried, extends between the high-voltage region and the low-voltage region, and delimits a vertical resistive region connecting the high-voltage region to the low-voltage region.

Abstract: A binary encoding circuit is for converting at least first and second binary input signals into an output code that includes at least first and second binary output signals. The circuit may include at least one first selection circuit and at least one second selection circuit that are interconnected and comprise transistors that can be activated/deactivated, i.e. made to conduct/not conduct, according to the binary input signals. The circuit makes it possible to generate a binary code that represents the binary number of the binary input signals that are simultaneously asserted. The encoding circuit can act as a static counter, for example.

Abstract: A processing unit with balanced outputs transfers a received digital signal to an amplification unit with balanced inputs and outputs. A control unit enables or disables the processing and amplification units in response to a power up/power down signal. To prevent disturbances due to power up/power down transients from appearing in a speaker connected between the outputs of the amplification unit, switches are provided between the outputs of the processing unit and the inputs of the amplification unit. A delay circuit generates according to a predetermined timing program enabling/disabling control signals for the processing and amplification units, and generates control signals for the switches.

Abstract: A method of driving an inductive load connected to an output of a power stage includes comparing a signal representative of an instantaneous value of current flowing through the inductive load with upper and lower thresholds during a switching cycle. The method also includes alternately performing a magnetization phase during which current is forced through the inductive load, and a demagnetization phase during which a load inductance of the inductive load discharges through at least one of a slow recirculation discharge current path and a fast recirculation discharge current path. Switching is performed between the slow and fast recirculation discharge current paths during each switching cycle as a function of the comparison for reducing a ripple on an output signal from the power stage.

Abstract: A method for manipulating MEMS devices integrated on a semiconductor wafer and intended to be diced one from the other includes bonding of the semiconductor wafer including the MEMS devices on a support with interposition of a bonding sheet. The method may also include completely cutting or dicing of the semiconductor wafer into a plurality of independent MEMS devices, and processing the MEMS devices diced and bonded on the support in a treatment environment for semiconductor wafers. A support for manipulating MEMS devices is also included.

Abstract: A method for obtaining a high resolution digital image from a plurality of starting images formed by pixel matrices and acquired at a lower resolution is provided. The method may include combining the plurality of starting images to generate a provisional high resolution image formed by a pixel matrix. The method may also include associating a respective error with at least a part of the pixels of the provisional image HR(0). More particularly, this may include providing a first error associated with at least one first pixel, and at least partially processing the provisional image by modifying the pixels of this image based upon the respective errors associated therewith. A second error may also be calculated to associate with at least one second pixel situated in the vicinity of the first pixel in the matrix (HR(0)). The second error may be calculated by using the first error associated with the at least one first pixel.

Abstract: An electronic power device is integrated monolithically in a semiconductor substrate. The device has a first power region and a second region, each region including P/N junction formed of a first semiconductor region with a first type of conductivity, which first semiconductor region extends through the substrate from the top surface of the device and is diffused into a second semiconductor region with the opposite conductivity from the first. The device also includes an interface structure between the two regions, of substantial thickness and limited planar size, that includes a trench filled with dielectric material. A method of manufacturing the electronic power device includes forming a silicon oxide-filled trench. The method includes forming, in the substrate, a plurality of small trenches having predetermined widths and -being delimited by a corresponding plurality of semiconductor material walls having second predetermined widths.

Abstract: The process comprises the steps of forming, on top of a semiconductor material wafer, a holed mask having a lattice structure and comprising a plurality of openings each having a substantially square shape and a side with an inclination of 45° with respect to the flat of the wafer; carrying out an anisotropic etch in TMAH of the wafer, using said holed mask, thus forming a cavity, the cross section of which has the shape of an upside-down isosceles trapezium; and carrying out a chemical vapor deposition using TEOS, thus forming a TEOS layer which completely closes the openings of the holed mask and defines a diaphragm overlying the cavity and on which a suspended integrated structure can subsequently be manufactured.

Abstract: A memory device implements a reading operation. The memory device includes first, second, and third memory cells; a read circuit coupled to the memory cells and operable to read first, second, and third values, respectively, from the first, second, and third memory cells; and a comparison circuit coupled to the read circuit and operable to compare the first and second values with fourth and fifth predetermined values and to generate a data-valid signal that indicates that the third value is valid if the first and second values equal the fourth and fifth values, respectively. The memory device may further include a selection circuit coupled to the read circuit and to the comparison circuit and operable to couple the third value to a data bus in response to the data-valid signal.

Abstract: Presented is a memory cell integrated in a semiconductor substrate that includes a MOS device connected in series to a capacitive element. The MOS device has first and second conduction terminals, and the capacitive element has a lower electrode covered with a layer of a dielectric material and capacitively coupled to an upper electrode. The MOS device is overlaid by at least one metallization layer that is covered with at least one top insulating layer. The capacitive element is formed on the top insulating layer. The cell is unique in that the metallization layer extends only between the MOS device and the capacitive element.

Abstract: Described herein is an optically readable memory device comprising a molecular memory obtained using carbon nanotubes. In particular, the molecular memory uses, as memory element, a bundle of carbon nanotubes, for which it is possible to obtain at least two stable states by modifying their geometrical configuration and, consequently, their optical transmission properties.

Abstract: A dielectric insulation structure is formed in a silicon layer by integrating a dielectric trench structure therein. The dielectric trench structure defines an insulation well where semiconductor devices are to be integrated therein. The dielectric trench structure is on a hollow region that is completely surrounded by a dielectric area. The dielectric area also forms the side insulation of the dielectric trench structure. The dielectric trench structure is interrupted by a plurality of points to define a plurality of side support regions for the insulation well.

Abstract: A process for manufacturing components in a multi-layer wafer, including the steps of: providing a multi-layer wafer comprising a first semiconductor material layer, a second semiconductor material layer (, and a dielectric material layer arranged between the first and the second semiconductor material layer; and removing the first semiconductor material layer initially by mechanically thinning the first semiconductor material layer, so as to form a residual conductive layer, and subsequently by chemically removing the residual conductive layer. In one application, the multi-layer wafer is bonded to a first wafer of semiconductor material, with the second semiconductor material layer facing the first wafer, after micro-electromechanical structures have been formed in the second semiconductor material layer of the multi-layer wafer.