Abstract: A microelectromechanical gyroscope includes: a substrate; a stator sensing structure fixed to the substrate; a first mass elastically constrained to the substrate and movable with respect to the substrate in a first direction; a second mass elastically constrained to the first mass and movable with respect to the first mass in a second direction; and a third mass elastically constrained to the second mass and to the substrate and capacitively coupled to the stator sensing structure, the third mass being movable with respect to the substrate in the second direction and with respect to the second mass in the first direction.

Abstract: A structural body made of semiconductor material includes an active area housing a drain region, a body region and a source region within the body region. An electrical-isolation trench extends in the structural body to surround the active area. A first PN-junction and a second PN-junction are integrated in the structural body between the active area and the trench, respectively located on opposite sides of the active area. The first and the second PN-junctions form a first diode and a second diode, with each diode having a respective cathode electrically coupled to the drain region of the MOSFET device and a respective anode electrically coupled to the source region of the MOSFET device.

Abstract: An activity tracking device, such as a step-counting device includes an interface configured to receive one or more acceleration signals and signal processing circuitry. The signal processing circuitry generates an indication of condition of an accelerometer, such as a body position of the accelerometer, based on one or more accelerometer signals, generates an event signal, such as an event flag, based on one or more accelerometer signals and the indication of the condition of the accelerometer, and generates an activity signal, such as step flag based on the event signal, the indication of the condition of the accelerometer and one or more acceleration signals. The signal processing circuitry may generate a noise signal based on one or more acceleration signals and generate the activity signal based on the noise signal.

Abstract: A non-volatile memory device includes a memory array, a reading circuit, a column decoder stage, and a read supply voltage generator. The column decoder stage includes selectable bitlines and selection switches. A read supply voltage generator includes a voltage regulation circuit and a dummy column decoder coupled to an output of the voltage regulation circuit and having electrical characteristics correlated to the selected read path. The voltage regulation circuit is configured to receive a first electrical quantity correlated to a desired voltage value on the selected bitline and a second electrical quantity correlated to a desired current value for the selected bitline and to generate a regulated read supply voltage for the column decoder stage.

Abstract: A sample treatment and molecule analysis cartridge is configured to be mounted in a treatment machine vertically. The cartridge has a sample inlet opening, a fluidic inlet, and a fluidic outlet. The cartridge houses an extraction chamber extending vertically from the sample inlet opening and connected to the fluidic inlet; a waste chamber extending vertically, alongside the extraction chamber; and a collector extending along the extraction chamber and the waste chamber and having a smaller height than the extraction chamber and the waste chamber. A fluidic circuit connects together the extraction chamber, the waste chamber, the collector, the fluidic inlet, and the fluidic outlet, and is configured to connect the fluidic outlet to vent openings of the extraction chamber, the waste chamber, and the collector, and to connect the bottom end of the extraction chamber to the fluidic inlet, the waste chamber, and the collector.

Abstract: Packaged device having a carrying base; an accommodation cavity in the carrying base; a semiconductor die in the accommodation cavity, the semiconductor die having die pads; a protective layer, covering the semiconductor die and the carrying base; first vias in the protective layer, at the die pads; and connection terminals of conductive material. The connection terminals have first connection portions in the first vias, in electrical contact with the die pads, and second connection portions, extending on the protective layer, along a side surface of the packaged device.

Abstract: In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.

Abstract: A system includes inertial sensors and a GPS. The system generates a first estimated vehicle velocity based on motion data and positioning data, generates a second estimated vehicle velocity based on the processed motion data and the first estimated vehicle velocity, and generates fused datasets indicative of position, velocity and attitude of a vehicle based on the processed motion data, the positioning data and the second estimated vehicle velocity. The generating the second estimated vehicle velocity includes: filtering the motion data, transforming the filtered motion data in a frequency domain based on the first estimated vehicle velocity, generating spectral power density signals, generating an estimated wheel angular frequency and an estimated wheel size based on the spectral power density signals, and generating the second estimated vehicle velocity as a function of the estimated wheel angular frequency and the estimated wheel size.

Abstract: A microelectromechanical device having a mobile structure including mobile arms formed from a composite material and having a fixed structure including fixed arms capacitively coupled to the mobile arms. The composite material includes core regions of insulating material and a silicon coating.

Abstract: A first wafer of semiconductor material has a surface. A second wafer of semiconductor material includes a substrate and a structural layer on the substrate. The structural layer integrates a detector device for detecting electromagnetic radiation. The structural layer of the second wafer is coupled to the surface of the first wafer. The substrate of the second wafer is shaped to form a stator, a rotor, and a mobile mass of a micromirror. The stator and the rotor form an assembly for capacitively driving the mobile mass.

Abstract: A tag adapted to be applied to an object is disclosed. The tag includes a wireless communication interface, a processor and a memory. A univocal code, a cipher key and a count value are store in the memory. The tag generates a dynamic code as a function of the cipher key and the count value. Next, the tag varies the count value according to a determined operation, and stores the varied count value in the memory. The tag transmits the univocal code and the dynamic code to a reader device. The tag may transmit the univocal code and the dynamic code in a URL.

Abstract: An amplification interface includes an input terminal receiving a sensor current and an output terminal supplying an output voltage. An analog integrator is connected to the input terminal and supplies the output voltage. A current generator is connected to the input of the analog integrator and generates a compensation current based on a drive signal. A control circuit generates the drive signal for the current generator based on a control signal representing an offset in the sensor current supplied by the sensor. The current generator generates, based on the driving signal, a positive or negative current. The control circuit determines a first duration and a second duration as a function of the control signal representing the offset in the sensor current, during the measurement interval, and sets the driving signal to a first logic value for the first duration and to a second logic value for the second duration.

Abstract: A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.

Abstract: A programmable data processing circuit is configured for receiving sensor signals indicative of gestures for identification by the processing circuit. The processing circuit applies to the sensor signals finite state machine processing resources to provide identification output signals indicative of gestures identified as a function of the sensor signals. A plurality of finite state machine processing programs loaded into the processing circuit include a data section and an instruction section. The data section including a fixed size part specifying respective processing resources used by the programs in the plurality of finite state machine processing programs and a variable size part with respective sizes for allocating the respective processing resources used by the programs in the plurality of finite state machine processing programs.

Abstract: One or more embodiments are directed to semiconductor packages and methods in which one or more electrical components are positioned between a semiconductor die and a surface of a substrate. In one embodiment, a semiconductor package includes a substrate having a first surface. One or more electrical components are electrically coupled to electrical contacts on the first surface of the substrate. A semiconductor die is positioned on the one or more electrical components, and the semiconductor die has an active surface that faces away from the substrate. An adhesive layer is on the first surface of the substrate and on the one or more electrical components, and the semiconductor die is spaced apart from the one or more electrical components by the adhesive layer. Wire bonds are provided that electrically couples the active surface of the semiconductor die to the substrate.

Abstract: A manufacturing method of an anchorage element of a passivation layer, comprising: forming, in a semiconductor body made of SiC and at a distance from a top surface of the semiconductor body, a first implanted region having, along a first axis, a first maximum dimension; forming, in the semiconductor body, a second implanted region, which is superimposed to the first implanted region and has, along the first axis, a second maximum dimension smaller than the first maximum dimension; carrying out a process of thermal oxidation of the first implanted region and second implanted region to form an oxidized region; removing said oxidized region to form a cavity; and forming, on the top surface, the passivation layer protruding into the cavity to form said anchorage element fixing the passivation layer to the semiconductor body.

Abstract: A photonic integrated circuit chip includes vertical grating couplers defined in a first layer. Second insulating layers overlie the vertical grating coupler and an interconnection structure with metal levels is embedded in the second insulating layers. A cavity extends in depth through the second insulating layers all the way to an intermediate level between the couplers and the metal level closest to the couplers. The cavity has lateral dimensions such that the cavity is capable of receiving a block for holding an array of optical fibers intended to be optically coupled to the couplers.

Abstract: A communication device includes an integrated smart card and a software profile management module. The software profile management module is configured to store profiles in the smart card, receive an operation request that includes an indication of a requested operation and an identifier of the smart card, check whether the operation request corresponds to an identifier of the smart card that is available in a repository server, and perform the requested operation only if the operation request is available in the repository server.

Abstract: An integrated MOSFET device is formed in a body of silicon carbide and with a first type of conductivity. The body accommodates a first body region, with a second type of conductivity; a JFET region adjacent to the first body region; a first source region, with the first type of conductivity, extending into the interior of the first body region; an implanted structure, with the second type of conductivity, extending into the interior of the JFET region. An isolated gate structure lies partially over the first body region, the first source region and the JFET region. A first metallization layer extends over the first surface and forms, in direct contact with the implanted structure and with the JFET region, a JBS diode.

Abstract: A circuit includes an input port receiving an input signal having a first frequency. A phase-shifter network is coupled to the input port, receives the input signal, and produces therefrom first and second signals in quadrature with one another. Frequency multiplier circuitry has a common node and includes a first rectifier for rectifying the first signal to produce a first rectified signal having a second frequency that is twice the first frequency and to be applied to the common node, and a second rectifier rectifying the second signal to produce a second rectified signal having the second frequency and to be applied to the common node. A combination of the first and second rectified signals is available at the common node and includes harmonic contents at a frequency that is fourfold the first frequency.