Abstract: In order to generate, starting from an input MPEG bitstream, an output MPEG bitstream having at least one entity chosen among syntax, resolution, and bitrate modified with respect to the input bitstream, first portions and second portions are distinguished in the input bitstream, which respectively substantially do not affect and do affect the variation in bitrate. When at least one between the syntax and the resolution is to be modified, the first portions of the input bitstream are subjected to the required translation, then transferring said first portions subjected to syntax and/or resolution translation to the output bitstream. When the resolution is left unaltered, the second portions are transferred from the input bitstream to the output bitstream in the substantial absence of processing operations. When the resolution is changed, the second portions of the input bitstream are subjected to a filtering in the domain of the discrete cosine transform.

Abstract: Bandgap type reference voltage source using an operational transimpedance amplifier. The bandgap stage is formed by a first and a second bandgap branch parallel-connected; the first bandgap branch comprises a first diode and a transistor, series-connected and forming a first output node; the second bandgap branch comprises a second diode and a second transistor series-connected and forming a second output node. The operational amplifier has inputs connected to the output nodes of the bandgap stage. An amplifier current detecting stage is connected to the outputs of the operational amplifier and supplies a current related to the current drawn by the operational amplifier. A diode current detecting stage is connected to the output of the amplifier current detecting stage and to an output of the operational amplifier and supplies a current related to the current flowing in the first diode. An output stage transforms this current into a stabilized voltage.

Abstract: A process of fabricating a floating-gate memory device, the process including the steps of: forming a stack of superimposed layers including a floating gate region, a dielectric region, and a control gate region; and forming an insulating layer of oxynitride to the side of the floating gate region to completely seal the floating gate region outwards and improve the retention characteristics of the memory device. The insulating layer is formed during reoxidation of the sides of the floating gate region, after self-align etching the stack of layers and implanting the source/drain of the cell.

Abstract: A circuit and method are disclosed for monitoring the voltage level of an electrical signal, such as an unregulated power supply. The circuit includes a comparator that compares the electrical to the voltage reference and generates an output having a value that is based upon the comparison. A oscillation suppression circuit receives the output of the comparator and generates an output signal that follows the output of the comparator once the output of the comparator remains stable and in the same logic state for a predetermined of time.

Abstract: A circuit and method are disclosed for monitoring the voltage level of an unregulated power supply. The circuit includes a voltage reference circuit for generating a first reference voltage signal and a trim circuit which generates a trimmed reference voltage signal based upon the first reference voltage signal. A comparator compares the unregulated power supply voltage to the trimmed reference voltage signal and asserts an output signal based upon the comparison. The output signal is fed back as an input to the trim circuit so that the trim circuit provides a hysteresis effect.

Abstract: A device for reading from a capacitive memory cell, including a comparator of the voltage stored in the memory cell with respect to a reference value, which exhibits a high input impedance; a refreshment means distinct from the comparator, the refreshment means having a low output impedance and being controlled by the comparator to impose a refreshment voltage to the memory cell; and means for controllably connecting the refreshment means to the memory cell.

Abstract: A method of signal compression of a signal to reduce the large dynamic range, for example, of the output signal of a CD player in such a way that soft passages of a piece of music are reproduced in somewhat louder manner and very loud passages of a piece of music some are reproduced in somewhat less loud manner. The signal compression circuit used therefor can be integrated completely. The audio signal is fed over a volume control, which can be adjusted by the user, and to this end, a digital setting signal in accordance with the adjustment made on the user side, is supplied via a bus line. When the audio signal is strongly increasing, a tracking signal is formed of said signal, with the amplitude thereof being dependent on the medium amplitude of the audio signal. A window comparator compares the tracking signal with a reference value, as a consequence of which the contents of the up/down counter are reduced. This reduced value is added via an adder to the digital setting signal for the volume control.

Abstract: A system includes a signal reconstruction controller (110) electrically coupled to at least one analog-to-digital converter (ADC) (112) and to a phase adjustable clock source (108). A sampling clock signal (116) is electrically coupled from the clock source (108) to the at least one ADC (112). The at least one ADC (112) samples an electronic signal according to the sampling clock signal (116) to provide a digital representation of the electronic signal. The controller (110) samples data from the ADC (112) at different sampling points in the electronic signal and determines the edges (140) of the electronic signal and the noisy samples (142, 144) that are away from the edges (140) of the electronic signal. By finding the least noisy sample (146, 148) that is away from the edges (140) of the electronic signal the controller (110) adjusts the phase of a sampling signal clock (116) to a sampling point that is the most reliable to sample the electronic signal to provide a digital representation thereof.

Abstract: An apparatus (and method) is provided that reduces thermal interference in the read signal of a disk drive. A variable or programmable resistance is used to change the transfer function of a filter in the read channel of the disk drive to filter the read signal. The filter has a first transfer function (first cut-off frequency) related to the programmed resistance during normal operation of the disk drive (i.e. when thermal interference is not detected). When thermal interference is detected in the read signal, the resistance is programmed to another value resulting in the filter having a second transfer function (second cut-off frequency). The resistance element includes a transconductance amplifier whose transconductance is variable or programmable to different values resulting in different programmable transfer functions (or one of a multitude of cut-off frequencies) for the filter.

Abstract: A method and apparatus for determining the distance separating an electromagnetic transponder from a terminal generating a magnetic field by a first oscillating circuit, the transponder including a second oscillating circuit, upstream of a rectifying circuit adapted to providing a D.C. voltage. The method includes storing a first information relative to the level of the D.C. voltage when the second oscillating circuit is tuned on a determined frequency; storing a second information relative to the level of the D.C. voltage after having caused a frequency detuning of the second oscillating circuit; and comparing the two stored pieces of information.

Abstract: A method is for forming an intermediate dielectric layer to optimize the planarity of electronic devices integrated on a semiconductor which incorporate non-volatile memories. The insulating dielectric is deposited from a liquid state source comprising silicon oxides and organics of the resist type. The liquid dielectric layer is evenly spread by a spinning technique providing good levels of planarity. Solidification, referred to as polymerization, is achieved through a low-temperature thermal cycle. Since this dielectric layer cannot be used as such to isolate the semiconductor substrate from the overlying metallization plane on account of the presence of organics forming a source of impurities, it is arranged for the layer to be encapsulated between two dielectric layers of silicon oxide as deposited from a plasma.

Abstract: The integrated inductor comprises a coil of metal which is formed in the second metal level. The coil is supported by a bracket extending above spaced from a semiconductor material body by an air gap obtained by removing a sacrificial region formed in the first metal level. The bracket is carried by the semiconductor material body through support regions which are arranged peripherally on the bracket and are separated from one another by through apertures which are connected to the air gap. A thick oxide region extends above the semiconductor material body, below the air gap, to reduce the capacitive coupling between the inductor and the semiconductor material body. The inductor thus has a high quality factor, and is produced by a process compatible with present microelectronics processes.

Abstract: The invention includes a multichip integrated circuit package having at least two chips electrically isolated from one another. Within the multichip integrated circuit package is a slug that is directly coupled to at least two chips, without any intervening insulating layers. The slug is physically separated at an appropriate place between the two chips, so that electrical interference between the two chips is effectively eliminated. Making the integrated circuit package begins with directly attaching the two chips to a heat dissipating slug. The heat dissipating slug can have a pre-cut groove running between the chips. Once the chips are attached to the slug, the slug is molded into the multichip integrated circuit package. Then, the slug is physically separated into two pieces from the underside, the separation running along the pre-cut groove. Usually the slug would be separated by being cut by a saw.

Abstract: A PWM power amplifier having at least one PCM/PWM converter fed by PCM digital input signals and producing PWM digital output signals, and at least one power amplification final stage of the PWM digital output signals. At least one PCM/PWM converterincludes a counter fed with at least one clock signal produced by a clock generator device and having a digital comparator suitable for comparing the PCM digital input signals of at least one PCM/PWM converter with a digital comparison signal produced by the counter and producing in output the PWM digital signals. The clock generator device includes a pulse generator device and an oscillator; the pulse generator device receives a signal at a frequency that is equal to the frequency of the PCM digital input signals of the at least one PCM/PWM converter and produces in output reset pulses. The reset pulses are sent in input to the oscillator, which produces in output the at least one clock signal.

Abstract: A self-aligned double-polysilicon type bi-polar transistor with a heterojunction base comprises a semiconducting heterojunction region lying over an active region of a semiconductor substrate and over an isolating region delimiting the active region, and incorporating the intrinsic base region of the transistor. An emitter region situated above the active region and coming into contact with the upper surface of the semiconducting heterojunction region. A polysilicon layer forming the extrinsic base region of the transistor, situated on each side of the emitter region and separated from the semiconducting heterojunction region by a separation layer comprising an electrically conducting connection part situated just outside the emitter region. This connection part ensures an electrical contact between the extrinsic base and the intrinsic base.

Abstract: A redundancy architecture for a memory includes an array of memory cells divided into at least a pair of semi-arrays that are singularly addressable. Each semi-array is organized into rows and columns. The redundancy architecture includes a number of packets each including redundancy columns. The packets are divided into two subsets of packets. Each packet is addressable independently from the other by respective address circuits. Each packet also provides redundancy columns exclusively for a respective semi-array.

Abstract: The voltage converter circuit has first and second input terminals, and first and second output nodes, and comprises: a first power switch connected between the first input terminal and the first output node; a second power switch connected between the first output node and the second input terminal; a first delay circuit having first and second terminals connected between the first input terminal and a control terminal of the first power switch; and a second delay circuit having first and second terminals connected between the first output terminal and a control terminal of the second power switch. Each delay circuit detects a variation in the voltage supplied on the respective first terminal and detects an operating condition of the respective power switch on the second terminal, and supplies to the control terminal of the respective power switch a switching on delay signal.

Abstract: A technique for forming integrated circuit device contacts includes the formation of nitride spacers along side gate electrodes for LDD definition. In addition, a nitride cap layer is formed over the gate electrodes. When a contact opening is formed through the interlevel oxide dielectric, the nitride cap and sidewall spacers protect the gate electrode from damage and shorting. A highly doped poly plug is formed in the opening to make contact to the underlying substrate. Metalization is formed over the poly plug in the usual manner.

Abstract: A structure and method for creating an integrated circuit passivation (24) comprising, a circuit (16), a dielectric (18), and metal plates (20) over which an insulating layer (26) is disposed that electrically and hermetically isolates the circuit (16), and a discharge layer (32) that is deposited to form a passivation (24) that protects the circuit (16) from electrostatic discharges caused by, e.g., a finger, is disclosed.

Abstract: A reading circuit having an array branch connected via an array bit line to an array memory cell, the content of which is to be read; a reference branch connected via a reference bit line to a current generator stage supplying a reference current; a current/voltage converter stage connected to the array branch and to the reference branch, and supplying at an array node and at a reference node respectively an array potential and a reference potential, which are correlated to the currents flowing respectively in the array branch and in the reference branch; a comparator stage connected to the array node and the reference node for comparing the array and reference potentials; a sample and hold stage arranged between the array node and the comparator stage and selectively operable to sample and hold the array potential; and a switching off stage for switching off the array branch.