Abstract: A sense amplifier of the type coupled to a reference bit line and at least one cell array bit line. The sense amplifier includes an amplifying stage and a current voltage conversion circuit that compare a reference current from the reference bit line and a cell current from the cell array bit line. The current-voltage conversion circuit includes a voltage setting circuit for setting predetermined voltages on the reference bit line and the cell array bit line, a load circuit for the reference bit line and the cell array bit line, and current mirror circuits for mirroring the reference current and the cell current into the amplifying stage. The load circuit for the reference bit line and the current mirror circuit for the reference current are different circuits, and the load circuit for the reference bit line includes a transistor that mirrors a predetermined current that is generated outside of the sense amplifier.

Abstract: The present invention relates to a transmitter of an analog order over an A.C. supply line meant for a load, including a one-way conduction element in parallel with a resistive element having a value that is a function of the analog order to be transmitted.

Abstract: A regulated voltage generator provides different regulated voltages to an integrated circuit. The regulated voltage generator includes a bandgap reference circuit and at least one gain stage connected to an output thereof. The output voltage of the bandgap reference circuit varies as a function of temperature to compensate for variations in the gain stage made up of first and second transistors. A regulated voltage output by the regulated voltage generator is independent of temperature and of the supply voltage. The value of the regulated voltage is adjusted via a load resistor and via the first and second transistors along with an output transistor of the bandgap reference circuit.

Abstract: A non-volatile memory matrix architecture, having a virtual ground monolithically integrated on a semiconductor substrate, includes a plurality of memory cells organized into matrix blocks. The matrix blocks are placed on rows and columns and are associated with respective row and column decoding circuits. The memory blocks are separated from each other by at least one insulation stripe which is parallel to the columns. The non-volatile memory matrix architecture further includes a pass-transistor decoding circuit with a number of levels corresponding to the number of rows to select.

Abstract: A multi-carrier transmission system. A received multi-carrier signal is sampled and digitized before FFT processing. Multi-carrier signals consist of many narrow band carrier waves which convey data via a wide band channel. The amplitude distribution of the sum of all the individual carriers is Gaussian. This means that high amplitudes occur with low probability. At the present time, analog to digital converters have a limited dynamic range. It is therefore normal practice to provide a compromise between cutting and quantization noise. The adverse affects of a course quantization have to be balanced between signal distortions caused by the loss of the low probability high amplitude signals.

Abstract: The device comprises a current mirror circuit having a first and a second node connected, respectively, to a constant current source and to a drain terminal of a memory cell to be programmed. A voltage generating circuit is connected to the first node to bias it at a constant reference voltage (VR); an operational amplifier has an inverting input connected to the first node, a non-inverting input connected to the second node, and an output connected to the control terminal of the memory cell. Thereby, the drain terminal of the memory cell is biased at the constant reference voltage, having a value sufficient for programming, and the operational amplifier and the memory cell form a negative feedback loop that supplies, on the control terminal of the memory cell, a ramp voltage (VPCX) that causes writing of the memory cell. The ramp voltage increases with the same speed as the threshold voltage and can thus be used to know when the desired threshold value is reached, and thus when programming must be stopped.

Abstract: A device for locating a DES key value that corresponds to a packet identification (PID) contained at a variable possible location which comprises part only of a 32-bit packet header. A table stored in memory contains for each DES key: (i) a packet header having 32 bits with a PID of either 12, 9 or 8 bits contained at a defined location and with zero values elsewhere, and (ii) a mask value also having 32 bits with ones contained at the said defined location of the PID and zeros elsewhere. The table is divided into regions for respective packet format types. An incoming packet header at an input is combined with a first one of the mask values from the table to provide a combined value that consists of the value held in the input packet header at the defined location and zeros elsewhere. This combined value is compared with the corresponding packet header stored in the table. When they are not equal, the combining and comparison is repeated for the next row of the table.

Abstract: The reading timing device has a data-sensing stage, receiving a sensing-latch signal, and an output stage, including an output buffer and enabled at a first switching edge of a synchronization signal. A reading timing stage generates the sensing-latch signal not before a preset time interval from the first switching edge of the synchronization signal. Thereby, reading, in particular data-latching in the data-sensing stage, is temporarily separated from switching of the output buffers. This separation is obtained using the sync signal. Since the output buffers must switch in a preset time from the rising edge of the sync signal, the pulse of the sensing-latch signal is shifted after this time, and more precisely after the falling edge of the sync signal.

Abstract: An SMPS converter with an inductor connected in series to the standard inductor present in the output filter to form an inductive divider supplying an intermediate voltage having an amplitude greater than the output voltage. The intermediate voltage is supplied to a capacitor that stores the voltage during the conduction phase of the integrated circuit that forms the switch of the converter and transfers the voltage during opening of the integrated circuit to a capacitor connected between the output and the supply input of the integrated circuit.

Abstract: The method is for transmitting data between two devices via a clock wire or line and at least one data wire or line. The clock wire is maintained by default on a logic value A, and each device is capable of tying the clock wire to an electric potential representing a logic value B that is the opposite of A. According to the method, both devices tie the clock wire to B when a datum is transmitted, the device to which the datum is sent does not release the clock wire while it has not read the datum, and the device sending the datum maintains the datum on the data wire at least until an instant when the clock wire is released by the device to which the datum is sent. The method is particularly applicable to communication between a microcomputer and a microprocessor.

Abstract: A processing unit is associated with a first FIFO-type memory and with a second FIFO-type memory. Each instruction for loading memory stored data into a register within the processing unit is stored in the first FIFO-type memory, and other operative instructions are stored in the second FIFO-type memory. An operative instruction involving the register is removed from the second FIFO-type memory if no loading instruction which is earlier in time, and intended to modify a value of the register associated with this operative instruction is present in the first FIFO-type memory. In the presence of such an earlier loading instruction, the operative instruction is removed from the second FIFO-type memory only after the loading instruction has been removed from the first FIFO-type memory.

Abstract: A voltage-switching device includes a high-voltage translator connected to a high-voltage node receiving either a low-voltage logic level or a high-voltage level as a function of a low-voltage/high-voltage mode control signal to provide at least one output signal as a function of this mode control signal and of a switching control signal. A voltage-level switching circuit is controlled by output signals from the high-voltage translator and by the mode control signal and the switching control signal for application, as output voltage levels, of either ground or the low-voltage logic level in low-voltage mode or the high-voltage level in high-voltage mode.

Abstract: A thermal control circuit for an integrated power transistor includes a current generator controlled by a turn on signal, a sensing resistance in series with the power transistor, and a current limiter acting when the voltage drop on the sensing resistance overcomes a certain value. The circuit also includes a current amplifier coupled to the output node of the controlled current generator for outputting a drive current that is injected onto a control node of the power transistor. A soft thermal shut down circuit is provided having a conduction state which is enhanced as the temperature increases for reducing the drive current. The circuit controls the voltage on the power transistor in a more effective manner because the current amplifier has a variable gain controlled by the state of conduction of the soft thermal shut down circuit.

Abstract: A remote terminal includes a receiver stage for receiving a transmitted signal and for delivering an analog signal. The remote terminal further includes an analog/digital converter for converting the analog signal to a digital signal, and a processing stage for processing the digital signal. The analog/digital converter is a delta-sigma converter having adjustable parameters, and the processing stage includes a tuning circuit for adjusting these parameters on the fly as a function of the transmission standard, of the actual rate of transmission of the useful data, and of the actual conditions of reception.

Abstract: An integration process in a SOI substrate of a semiconductor device having at least a dielectrically insulated well, the process including: an oxidizing step directed to form an oxide layer; a depositing step of a nitride layer onto the oxide layer; a masking step, carried out onto the nitride layer using a resist layer and directed to define suitable photolithographic openings for forming at least one dielectric trench effective to provide side insulation for the well; an etching step of the nitride layer and oxide layer, as suitably masked by the resist layer, the nitride layer being used as a hardmask; a step of forming the at least one dielectric trench, which step comprises at least one step of etching the substrate, an oxidizing step of at least sidewalls of the at least one dielectric trench, and a step of filling the at least one trench with a filling material; and a step of defining active areas of components to be integrated in the well, being carried out after the step of forming the at least one d

Abstract: A current source includes a current mirror and a core connected together between two supply terminals. The current mirror comprises a pilot transistor and first and second recopy transistors. The core comprises first and second transistors and a resistance. The first transistor and the first recopy transistor are connected together to form a first branch. The resistance and the second recopy transistor are connected together to form a second branch. The pilot transistor and the second transistor are connected together to form a third branch. These branches are connected between the two supply terminals. The first transistor is linked to the second branch between the resistance and the second recopy transistor. The second transistor is connected to the first branch between the first core transistor and the first recopy transistor.

Abstract: An inductance structure arranged on a semiconductor substrate, including an inductance and a conductive plane arranged between the inductance and the substrate. The conductive plane is formed of several separate conductive elements, the connection of which is performed by conductive tracks connecting at least one conductive element to a contact point M of the conductive plane. Each of the conductive tracks is arranged so that the resultant of the electromotive forces induced in said conductive track by the inductance is substantially null.

Abstract: A direct-comparison reading circuit for a nonvolatile memory array having a plurality of memory cells arranged in rows and columns, and at least one bit line, includes at least one array line, selectively connectable to the bit line, and a reference line; a precharging circuit for precharging the array line and reference line at a preset precharging potential; at least one comparator having a first terminal connected to the array line, and a second terminal connected to the reference line; and an equalization circuit for equalizing the potentials of the array line and reference line in the precharging step. In addition, the reading circuit includes an equalization line distinct from the reference line; and controlled switches for connecting, in the precharging step, the equalization line to the array line and to the reference line, and for disconnecting the equalization line from the array line and from the reference line at the end of the precharging step.

Abstract: Chip Outline Band (COB) structure for an integrated circuit integrated in a semiconductor chip having a semiconductor substrate of a first conductivity type and biased at a common reference potential of the integrated circuit, the COB structure comprising a substantially annular region formed in the substrate along a periphery thereof, and at least one annular conductor region superimposed on and contacting the substantially annular region, wherein the substantially annular region is electrically connected at the common reference potential.

Abstract: An apparatus and method for switching between two power supplies, a primary power supply and a secondary power supply. The present invention generates a first reference voltage using the voltage of the primary power supply and the secondary power supply, wherein the primary power supply voltage is variable. The present invention also generates a second reference voltage based on the voltage of the primary power supply. The first and second reference voltages each have a different slope and the crossing point between these two reference voltages indicate that a switch between the primary power supply and the secondary power supply should occur.