Abstract: A method for digital-to-analog conversion of a digital input code into a first output analog signal and a second output analog signal to be supplied to a first terminal and a second terminal, respectively, of an audio load, the conversion being performed by means of a DAC with N-level balanced output, the conversion method includes using N/2 positive generator elements supplying respective positive elementary contributions which are nominally equal to one another, and N/2 negative generator elements supplying respective negative elementary contributions which are nominally equal to one another and, in absolute value, equal to the positive elementary contributions; attributing the same progressive addresses to the positive generator elements and to the negative generator elements; defining a first index for the positive input codes and a second index for the negative input codes; and, in the presence of an input code at the input of the DAC, selecting between the first index and the second index, the index cor

Abstract: A byte-switch structure for electrically erasable and programmable non-volatile memories, includes a MOS transistor having a drain electrode coupled to a respective metal control gate line, a source electrode coupled to a respective polysilicon byte control line which is connected to control gate electrodes of all the memory cells of a same memory byte or word and is formed in an upper polysilicon layer, and a gate electrode coupled to a respective word line. The source and drain electrodes of the MOS transistor are respectively a first and a second doped regions of a first conductivity type formed in a semiconductor layer of a second conductivity type at opposite sides of the respective word line.

Abstract: The present invention relates to a surge current limiting circuit of a filament lamp, meant to be connected in series between the filament and a switch that supplies an a.c. voltage, including at least one controllable active element, for limiting the current to a predetermined threshold value.

Abstract: A simplified non-DSCP process for the definition of the tunnel area in nonvolatile memory cells with semi-conductor floating gates is presented. The memory cells are non-aligned and are incorporated in a matrix of cells and have associated control circuitry. In additional, to each cell a selection transistor is associated. The process includes at least the following phases: growth or deposition of a dielectric layer of gate of the sensing transistor and of the cells; tunnel mask for defining the area of tunnel; cleaning etching of the dielectric layer of gate in the area of tunnel up to the surface of the semiconductor; and growth of tunnel oxide. Advantageously, the tunnel mask is extended above the region occupied by the selection transistor.

Abstract: A linear regulator of the type including a power MOS transistor of a first channel type, controlled by an amplifier having an output stage including, between two supply terminals, a resistor and a first MOS control transistor of a second channel type. The regulator further includes a start-up circuit having a switchable resistor in parallel on said first resistor.

Abstract: Management of Test Access Port functions of a plurality of components arranged on a single chip by selectively driving the TAP function of each of the components with respective clocks, whilst the further signals for driving the TAP function are used in a shared mode among the various components. Preferably, associated with the aforesaid clocks is a pull-down function for selectively blanking the respective clocks in conditions of non-use. In a preferred way, the aforesaid dedicated clocks are generated on board the chip.

Abstract: The integrated circuit comprises a semiconductor substrate SB supporting a memory cell PM of the DRAM type comprising an access transistor T and a storage capacitor TRC. The access transistor is made on the substrate, and the substrate includes a capacitive trench TRC buried beneath the transistor and forming the storage capacitor, the capacitive trench being in contact with one of the source and drain regions of the transistor.

Abstract: A FLASH memory erasable by page includes a flash memory array containing a plurality of floating gate transistors arranged in pages, and a checking circuit for checking the threshold voltages of the floating gate transistors. Programmed transistors that have a threshold voltage less than a given threshold are reprogrammed. The checking circuit includes a non-volatile counter formed by at least one row of floating gate transistors, a reading circuit for reading the address of a page to be checked in the counter, and an incrementing circuit for incrementing the counter after a page has been checked.

Abstract: An integrated power device having a power transistor made up of a first diode and a second diode that are connected together in series between a collector region and emitter-contact region of the power transistor to define a common intermediate node, a control circuit including a high-voltage region bonded on the emitter-contact region (14) by means of an adhesive layer, and biasing circuit connected between the common intermediate node and the high-voltage region. The biasing circuit including a contact pad electrically connected to the common intermediate node, an electrical connection region that is in electrical contact with the high-voltage region (30), and a wire having a first end soldered on the contact pad and a second end soldered on said electrical connection region.

Abstract: Described herein is a method for storing a datum in a first and a second memory cells of a nonvolatile memory. The storage method envisages programming the first and second memory cells in a differential way, by setting a first threshold voltage in the first memory cell and a second threshold voltage different from the first threshold voltage in the second memory cell, the difference between the threshold voltages of the two memory cells representing a datum stored in the memory cells themselves.

Abstract: A ballast compatible with different types of gas discharge lamps includes a power supply and a controller connected to the power supply. The controller includes a memory having a plurality of desired operating parameters stored therein for respective different types of gas discharge lamps. A sensing circuit causes the power supply to supply a current to the gas discharge lamp prior to start-up and senses a voltage based thereon indicative of a type of the gas discharge lamp. A control circuit causes the power supply to provide the desired operating parameters based upon the type of gas discharge lamp. Since the desired operating parameters are applied to the gas discharge lamp, the life of the lamp is increased.

Abstract: A method of manufacturing an integrated semiconductor device having at least one non-volatile floating gate memory cell and at least one logic transistor. The method includes growing a first gate oxide layer over a silicon substrate, depositing a first polysilicon layer over the first gate oxide layer, selectively etching and removing the first polysilicon layer in order to define the floating gate of the memory cell, introducing dopant in order to obtain source and drain regions of the memory cell, depositing a dielectric layer, selectively etching and removing the dielectric layer and the first polysilicon layer in a region wherein the logic transistor will be formed, depositing a second polysilicon layer, selectively etching and removing the second polysilicon layer in order to define the gate of the logic transistor and the control gate of the memory cell.

Abstract: A process for connecting two bodies forming parts of an electromechanical, fluid and optical microsystem, wherein a welding region is formed on a first body; an electrically conductive region and a spacing region are formed on a second body; the spacing region extends near the electrically conductive region and has a second height smaller than said first height. One of the first and second bodies is turned upside down on the other, and the two bodies are welded together by causing the electrically conductive region to melt so that it adheres to the welding region and collapses until its height becomes equal to that of the spacing region. Thereby it is possible to seal active parts or micromechanical structures with respect to the outside world, self-align the two bodies during bonding, obtain an electrical connection between the two bodies, and optically align two optical structures formed on the two bodies.

Abstract: A dual-mode IC is provided for operating in first mode such as an ISO mode in accordance with International Standards Organization 7816 (ISO 7816) protocol, and a second, non-ISO mode, such as a USB mode in accordance with Universal Serial Bus (USB) protocol. The dual-mode IC is preferably in a smart card and includes a microprocessor, a switching block, and an external interface. The external interface includes a voltage supply pad, a reference voltage pad, a reset pad, a clock pad and an input/output pad in accordance with the ISO 7816 protocol, and a D-plus pad and D-minus pad in accordance with the USB protocol. The IC further includes a mode configuration circuit for detecting a USB mode condition on at least one of the D-plus and D-minus pads, and configuring the IC in the ISO mode or the USB mode depending on the result. Once the IC is configured in a particular mode, it will operate in only that mode until the next power-on reset sequence.

Abstract: The device is constituted by an N+ substrate, by an N− layer on the substrate, by a metal contact for a collector, by a buried P− base region, by a P+ base contact and insulation region within which an insulated N region is defined, by a metal contact on the base contact region for a base, by an N+ emitter region buried in the insulated region and forming a pn junction with the buried base region, by a P+ body region in the insulated region, by an N+ source region in the P+ region, by a metal contact for a source, and by a gate electrode. In order to achieve a low resistance Ron, the P+ body region extends as far as the buried N+ emitter region and an additional N+ region is provided within the body region and constitutes a drain region, defining, with the source region, the channel of a lateral MOSFET transistor.

Abstract: A word recognition device uses an associative memory to store a plurality of coded words in such a way that a weight is associated with each character of the alphabet of the stored words, wherein equal weights correspond to equal characters. To perform the recognition, a dictionary of words is first chosen; this is stored in the associative memory according to a pre-determined code; a string of characters which correspond to a word to be recognized is received; a sequence of weights corresponding to the string of characters received is supplied to the associative memory; the distance between the word to be recognized and at least some of the stored words is calculated in parallel as the sum of the difference between the weights of each character of the word to be recognized and the weights of each character of the stored words; the minimum distance is identified; and the word stored in the associative memory having the minimum distance is stored.

Abstract: A switched capacitor low-pass filter incorporates a plurality of integrator stages cascade connected together. The filter includes at least one stage that includes a circuit device for cancelling out glitch pulses. This device is a deglitching circuit provided within the filter. Preferably, each stage in the filter is formed of a deglitching device which acts as a smoothing integrator.

Abstract: An electrically alterable semiconductor memory includes at least two memory sectors the content of which is individually alterable, and a control circuit for controlling operations of electrical alteration of the content of the memory, permitting the selective execution of an operation of electrical alteration of the content of one of the memory sectors with the possibility of suspending the execution to permit read access to the other of the memory sectors. The control circuit is also capable of permitting, during the suspension, an operation of burst mode or page mode reading of the content of the other memory sector.

Abstract: The integrated circuit device has a vertical conduction structure in which a region, which contains the base of a bipolar transistor, has zones having different concentrations. The concentrations are lower where the flow of charges is more intense and higher elsewhere. A high gain of the bipolar transistor and a low resistance of the electronic switch in conduction are thus obtained.

Abstract: The selection/deselection circuit is for non-volatile memory word lines having a decoding line connected between a supply voltage and ground, and including a series of decoding transistors of the same conductivity controlled by respective selection signals and at least a load transistor whose conductivity is opposite to the conductivity of the decoding transistors in series with the series of transistors and biased by a control voltage. The load transistor produces an activating or deactivating voltage of a memory word line, and a circuit for controlling the load transistor is provided. Such an auxiliary control circuit includes a sensing element in series with the decoding transistors and the load transistor for producing a sensing signal switching between a first value when only one memory line is actually selected and a second value when multiple memory word lines appear to be simultaneously selected.