Abstract: The intelligent power supply regulator is used to adjust a supply voltage until an adjusted supply voltage to a served device is at or near the optimal supply voltage of the served device and thereafter maintain the adjusted supply voltage at or near the optimal supply voltage. Depending on the application, the intelligent power supply regulator can comprise: (1) a sensing circuit, a discriminator circuit and a voltage regulating circuit for regulating the supply voltage; or (2) a sensing circuit and a discriminator circuit for controlling a voltage regulating circuit, which regulates the supply voltage. The sensing circuit is coupled to the served device so that at least one performance parameter of the served device can be continuously measured.

Abstract: A semiconductor memory cell having a word line, a bit line, a precharge line, an access transistor, and first and second cross-coupled inverters. The first inverter includes a first P-channel transistor and a first N-channel transistor, and the second inverter includes a second P-channel transistor and a second N-channel transistor. The access transistor selectively couples the bit line to an output of the first or second inverter, and one terminal of the first N-channel transistor is connected to the precharge line. In a preferred embodiment, a control circuit is provided that, during a writing operation, supplies data to be written to the memory cell to the bit line, supplies a pulse signal to the precharge line, and activates the word line. A method of writing data to a semiconductor memory cell that is coupled to a word line and single bit line is also provided.

Abstract: A process for the formation of a device edge morphological structure for protecting and sealing peripherally an electronic circuit integrated in a major surface of a substrate of semiconductor material. The electronic circuit is of the type that calls for formation above the major surface of at least one dielectric multilayer. The dielectric multilayer includes a layer of amorphous planarizing material having a continuous portion extending between two contiguous areas with a more internal first area and a more external second area in the morphological structure. The device edge morphological structure includes in the substrate an excavation on the side of the major surface at the more internal first area of the morphological structure in a zone in which is present the continuous portion of the dielectric multilayer.

Abstract: The invention relates to a test area of an electronic circuit comprising a contact point formed in the surface of a substrate. The test area also includes spaced apart radially extending bosses adjacent the contact point for guiding a test probe positioned on the surface of the substrate to the contact point.

Abstract: An activation signal generating circuit includes a combinational logic circuit and a switch. The combinational logic circuit receives a normal mode control signal and a test mode control signal, and the switch receives a periodic clock signal. The switch is controlled by the output of the combinational logic circuit such that an activation signal is generated from the periodic clock signal. In one preferred embodiment, the switch is a CMOS change-over switch having two complementary MOS transistors connected in parallel, and a potential setting circuit imposes a specified potential at the output of the switch when the switch is open. A method of generating an activation signal is also disclosed.

Abstract: An address transition detector in a semiconductor memories, which provides means for obtaining two complementary address transition signals from an address signal and send them to a monostable circuit apt to emit output pulse signals on an output node as a function of logical status changements of said address signal, said monostable circuit comprising bistable memory circuits for storing the values of the address transition signals at each logical status changement of the adddress signal through a feedback path, said values of the address transition signals being apt to control selection means of the complementary address transition signals. According to the present invention, said monostable circuit (123; 223; 303; 403) has breaking means (140; 240; 340; 440) of the feedback path (FB) in response to an enable signal (AE).

Abstract: An angular speed sensor comprises a pair of mobile masses which are formed in an epitaxial layer and are anchored to one another and to the remainder of the device by anchorage elements. The mobile masses are symmetrical with one another, and have first mobile excitation electrodes which are intercalated with respective first fixed excitation electrodes and second mobile detection electrodes which are intercalated with second fixed detection electrodes. The first mobile and fixed excitation electrodes extend in a first direction and the second mobile and fixed detection electrodes extend in a second direction which is perpendicular to the first direction and is disposed on a single plane parallel to the surface of the device.

Abstract: A division method and division circuit that can be integrated into a modular arithmetic coprocessor performs a reversal by word for the dividend and the quotient. This is done using a plurality of registers.

Abstract: A method of detecting the relative position of the rotor of a sensorless DC brushless motor driven in a tripolar mode includes the step of monitoring the voltage difference between the drive voltage that is applied to at least one winding of the motor and the voltage drop on a resistive portion of the drive current path through the same winding. The voltage drop may be detected between the two current terminals of an MOS power device of the driving bridge of the winding. The monitoring of the voltage difference is used to signal a perturbation from a pre-existing condition of correct synchronization of the phase switchings during a driving phase in a tripolar mode of the motor. Such information may be used by the driving system to switch to one of a bipolar mode, a unipolar mode or a tripolar mode with momentary drive interruptions, until restoring a correct synchronization condition and/or attain a correct rotating speed.

Abstract: A method and circuit are provided for delaying a transition in a digital data stream fed to a write head of a mass storage device by a certain time interval when the transition occurs at a clock phase following the one during which a preceding transition has occurred, for pre-compensating intersymbol nonlinear interference effects suffered when reading the stored data. The method includes feeding digital data stream to be stored and a clock signal to a first circuit and outputting a pair of digital streams from the first circuit. The first stream assumes a first logic value every time a transition of the input stream occurs during a clock phase not successive to a clock phase during which a transition of the input stream has occurred. The second stream assumes the first logic value every time a transition of the input stream occurs during a clock phase following a clock phase during which a transition has taken place in the input stream.

Abstract: A DRAM made in monolithic form, the cells of which each include a MOS transistor and a capacitor, a second electrode of which is common to all cells of a same row and is covered with an insulator, the insulator being coated with independent conductive elements distributed on a same horizontal plane, two neighboring elements being biased to respective high and low levels.

Abstract: An EEPROM memory cell integrated in a semiconductor substrate comprises a floating gate MOS transistor having a source region, a drain region, and a gate region projecting from the substrate and is isolated from the substrate by an oxide layer including a thinner tunnel portion and heavily doped regions formed under said tunnel portion and extending to beneath the drain region, and a selection transistor having a source region, a drain region and a gate region, wherein said source region is heavily doped and formed simultaneously with said heavily doped regions.

Abstract: A carrier of semiconductor wafer transportation. The carrier comprising: a base; two or more walls mounted to the base, with a plurality of grooves for receiving wafers by lateral insertion thereinto through a mouth, the mouth defined by an upper wall and a substantially horizontal lower wall, wherein the groove comprises a closed end defined by a back wall joined to the upper wall and the lower wall so that the groove narrows from the mouth towards the closed end, the upper wall being slanted upward towards the mouth and the back wall being slanted towards the mouth in the region close to the horizontal wall.

Abstract: A dividing circuit comprises a plurality (N) of transistor stages connected in a ring. Each stage comprises a first pair of transistors of a first conductivity type connected in series between a first voltage level and an output node, a second pair of transistors of a second conductivity type connected in series between a second voltage level and said output node, wherein control nodes of a first transistor of each said transistor pair are connected together to provide an input node for the stage, and control nodes of a second transistor of each said transistor pair are connected together to provide a clock node for the stage, wherein the input node of each stage is connected to the output node of a preceding stage whereby an output signal is generated at each of said output nodes, each cycle of the output signal representing N cycles of a clock signal applied to said clock nodes of the stages, the output signal having a duty cycle that is closer to 50% than a duty cycle of said clock signal.

Abstract: A power MOSFET suitable for use in RF applications and a method for making the same is disclosed. The power MOSFET has an increased distance between gate and drain regions of the device in order to decrease the device gate to drain capacitance Cgd. The distance between the gate and drain regions is increased by selective doping of a polysilicon layer of the gate to produce at least two polysilicon gate regions separated by a region of undoped polysilicon that is positioned over a substantial portion of the drain region that resides between the channel portions of the body region of the device. The addition of a contact oxide layer formed directly above the region of undoped polysilicon further increases the distance between gate and drain. Finally, a metal layer is deposited over the entire structure to form the gate and source electrodes of the device.

Abstract: The present invention relates to a phase-locked loop circuit including: a programmable ring oscillator generating drive signals, an assembly of latches receiving an input signal of the circuit, the latches being driven by the drive signals and generating samples by sampling of the input signal, and a logic decoding circuit receiving samples generated by latches and accordingly driving the oscillator.

Abstract: A circuit is provided for supplying a load from an AC voltage supply. The circuit includes a control circuit and a bidirectional switch coupled in series with the load. The bidirectional switch includes two one-way switches connected in antiparallel, and the control circuit controls the bidirectional switch based on a relatively low DC voltage. The bidirectional switch is connected to a first terminal of the AC voltage supply, and the DC voltage is referenced to the first terminal of the AC voltage supply. Additionally, an apparatus connected to an AC voltage supply and a relatively low DC voltage is provided. The apparatus includes a control circuit, a load to be supplied by the AC voltage supply, and a bidirectional switch coupled in series with the load. The bidirectional switch includes two one-way switches connected in antiparallel, and the control circuit controls the bidirectional switch based on the DC voltage.

Abstract: An electronic counter for a semconductor-integrated non-volatile memory device includes a single count cell connected with its output to at least one storage element The count cell comprises a summing block of the half-adder type and a master portion of a master/slave flip-flop of which said storage element is a slave portion. Advantageously, the master portion has an output connected to the input side of a number n of slave registers arranged in parallel.

Abstract: A high-gain comparator has a built-in hysteresis offset voltage generation feature. The comparator is characterized as having several elements, including a differential amplifier pair that is provided with first and second input voltages, an offset voltage element that creates an offset voltage between the first and second elements of the differential amplifier pair, an output generation element operably coupled to the differential amplifier pair that generates an output voltage of the comparator which is indicative of a voltage difference between the first and second input voltages, and a control element operably coupled to the output signal that controllably adjusts the offset voltage from a first state to a second state in accordance with the output signal to create a hysteresis condition of the comparator.

Abstract: A ring oscillator having an odd number of single ended stages, each stage including two transistors connected as a current mirror. The stage provides for low-voltage performance and improved process tolerance characteristics.