Abstract: An integrated circuit comprises a memory device including a memory plane having non-volatile memory cells and being non-observable in read mode from outside the memory device, a controller, internal to the memory device, configured to detect the memorized content of the memory plane, and when the memorized content contains locking content, automatically lock any access to the memory plane from outside the memory device, the integrated circuit then being in a locked status, and authorize delivery outside the memory device of at least one sensitive datum stored in the memory plane.

Abstract: An integrated circuit improves scan testing efficiency by addressing slow Scan-OUT pins. The integrated circuit shifts data through high-frequency Scan-OUT pins every cycle and through low-frequency Scan-OUT pins every other cycle. Data that cannot be shifted through low-frequency pins is stored in an accumulator and later shifted out through high-frequency pins. Despite changing the scan-out data pattern, the tester used for testing the integrated circuit anticipates the resulting pattern, providing for the testing to not be negatively impacted.

Abstract: A pixel includes, on a first face, first trenches extending parallel to a first direction and regularly spaced in a second direction (orthogonal to the first direction) and second trenches extending parallel to the second direction and regularly spaced in the first direction. The first trenches include first notches, each first notch extending from a first trench and being aligned with a corresponding second trench. The second trenches include second notches, each second notch extending from a second trench and being aligned with a corresponding first trench.

Abstract: An active flyback converter is transitioned between a plurality of operational states based on a comparison of a control voltage signal to voltage thresholds and a count of a number of consecutive switching cycles during which a clamp switch is kept off. The plurality of operational states includes a run state, an idle state, a first burst state, and a second burst state. Each set of consecutive switching cycles of the first burst state includes a determined number of switching cycles during which signals are generated to turn the power switch on and off and to maintain an off state of the clamp switch, and a switching cycle in a determined position in the set of switching cycles during which signals are sequentially generated to turn the power switch on, turn the power switch off, turn the clamp switch on and turn the clamp switch off.

Abstract: A power conversion circuit includes a first node configured to receive a first voltage referenced to a second node configured to be coupled to a reference potential. A first power converter couples the first node to a third node. A second power converter couples a fourth node to an output node. A first capacitor couples the third node to the fourth node. A first switch connects the output node to the first node. An output switch connects the output node to a load.

Abstract: Micromachined ultrasonic transducer wherein a die including semiconductor material accommodates at least one ultrasonic cell. Each ultrasonic cell includes a piezoelectric structure, a cavity, and a membrane region, vertically aligned with each other. The cavity extends inside the die and downwardly delimits the membrane region. The piezoelectric structure is arranged on the membrane region and has at least one annular-shaped piezoelectric region. The micromachined ultrasonic transducer is configured to operate around the second axisymmetric vibration mode.

Abstract: Provided is an integrated circuit that includes: a terminal designed to receive a signal at a rated voltage level which can rise to a maximum voltage level; an output circuit including a first transistor and a second transistor coupled in series between the terminal and an output stage; and a protection circuit designed to generate a first voltage controlling the first transistor, and a second voltage controlling the second transistor. In an activated state, the first voltage and the second voltage are obtained by dividing the voltage level of said terminal. In a deactivated state, the first voltage is obtained by the voltage level of said terminal, and the second voltage is obtained by the level of a control voltage minus a threshold voltage of a protection transistor.

Abstract: An HEMT includes: a heterostructure; a dielectric layer on the heterostructure; a gate electrode, which extends throughout the thickness of the dielectric layer; a source electrode; and a drain electrode. The dielectric layer extends between the gate electrode and the drain electrode and is absent between the gate electrode and the source electrode. In this way, the distance between the gate electrode and the source electrode can be designed in the absence of constraints due to a field plate that extends towards the source electrode.

Abstract: A Phase Change Memory (PCM) device includes sets of cells in which a binary logic level is written by a write operation. Each cell is included in a respective set of cells in the sets of cells. The write operation includes: performing write verify operations on the cells to identify an actual logic level stored in the cells; checking if the identified actual logic level matches a certain the binary logic level; in response to the checking determining that in at least one cell the actual logic level fails to match the binary logic level, correcting the actual logic level to match the binary logic level by performing: a set write operation in case the binary logic level is a high logic level, or a reset write operation in case the binary logic level is a low logic level.

Abstract: A power stage includes parallel FETs including a reference FET. An input PWM signal has a switching period. A current sensor senses current flowing through the power stage during switch-on period. A first circuit generates a first PWM signal having a duty-cycle indicative of reference FET driving losses for a reference current. A second circuit generates a second PWM signal having a duty-cycle indicative of reference FET conduction losses for that reference current. The duty cycles of the first and second PWM signals are compared to generate a comparison signal. The reference current is changed until a logic state of the comparison signal changes. A respective enable signal for each FET is generated by comparing the reference current to the sensed current flowing through the power stage. A FET driver circuit generates a respective drive signal for each FET by combining the respective enable signal with the input PWM signal.

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

Abstract: Unclonable function circuitry includes a plurality of pairs of phase-change memory cells in a virgin state, and sensing circuitry coupled to the plurality of pairs of phase-change memory cells in the virgin state. The sensing circuitry identifies a subset of the plurality of pairs of phase-change memory cells in the virgin state based on a reliability mask. Signs of differences of effective resistance values of the identified subset of the plurality of pairs of phase-change memory cells in the virgin state are sensed by the sensing circuitry. The sensing circuitry generates a string of bits based on the sensed signs of differences in the effective resistance values of the identified subset of the plurality of pairs of phase-change memory cells in the virgin state. Processing circuitry coupled to the unclonable function circuitry, in operation, executes one or more operations using the generated string of bits.

Abstract: Image sensors and methods of manufacturing image sensors are provided. One such method includes forming a structure that includes a semiconductor layer extending from a front side to a back side, and a capacitive insulation wall extending through the semiconductor layer. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductor or a semiconductor material. Portions of the semiconductor layer and the region of the conductor or semiconductor material are selectively etched, and the first and second insulating walls have portions protruding outwardly beyond a back side of the semiconductor layer and of the region of the conductor or semiconductor material. A dielectric passivation layer is deposited on the back side of the structure, and portions of the dielectric passivation layer are locally removed on a back side of the protruding portions of the first and second insulating walls.

Abstract: According to one aspect, a system-on-a-chip is proposed which includes a memory storage, a computation circuit, a comparison circuit, and a validation circuit. The memory storage is configured to store an external software module. The computation circuit is configured to compute several modified software modules from the external software module and compute check values by iteration until obtaining a final check value. Each check value is computed at least from a given modified software module and a check value previously computed, starting with a predefined initial check value. The comparison circuit is configured to compare the final check value to an expected value stored in the system-on-a-chip. The validation circuit is configured to validate the external software module when the final check value is equal to the expected value.

Abstract: A PMUT device includes a membrane element adapted to generate and receive ultrasonic waves by oscillating, about an equilibrium position, at a corresponding resonance frequency. A piezoelectric element is located over the membrane element along a first direction and configured to cause the membrane element to oscillate when electric signals are applied to the piezoelectric element, and generate electric signals in response to oscillations of the membrane element. A damper is configured to reduce free oscillations of the membrane element, and the damper includes a damper cavity surrounding the membrane element, and a polymeric member having at least a portion over the damper cavity along the first direction.

Abstract: Various embodiments provide a device for measuring the flow of fluid inside a tube moved by a peristaltic pump is provided with: a detection electrode arrangement coupled to the tube to detect an electrostatic charge variation originated by the mechanical action of the peristaltic pump on the tube; a signal processing stage, electrically coupled to the detection electrode arrangement to generate an electrical charge variation signal; and a processing unit, coupled to the signal processing stage to receive and process in the frequency domain the electrical charge variation signal to obtain information on the flow of a fluid that flows through the tube based on the analysis of frequency characteristics of the electrical charge variation signal.

Abstract: Trenches of different depths in an integrated circuit are formed by a process utilizes a dry etch. A first stop layer is formed over first and second zones of the substrate. A second stop layer is formed over the first stop layer in only the second zone. A patterned mask defines the locations where the trenches are to be formed. The dry etch uses the mask to etch in the first zone, in a given time, through the first stop layer and then into the substrate down to a first depth to form a first trench. This etch also, at the same time, etch in the second zone through the second stop layer, and further through the first stop layer, and then into the substrate down to a second depth to form a second trench. The second depth is shallower than the first depth.

Abstract: In an embodiment, a voltage converter is configured to operate by a succession of operating cycles, each cycle comprising an energy accumulation phase and an energy restitution phase, wherein the converter is further configured to determine a duration of one of the phases by comparing a voltage ramp and a first reference voltage, and wherein a slope of the voltage ramp depends on a sign of a current in an inductor at an end of a previous operating cycle.

Abstract: The present disclosure is directed to a gas sensor device that detects gases with large molecules (e.g., a gas with a molecular weight between 150 g/mol and 450 g/mol), such as siloxanes. The gas sensor device includes a thin film gas sensor and a bulk film gas sensor. The thin film gas sensor and the bulk film gas sensor each include a semiconductor metal oxide (SMO) film, a heater, and a temperature sensor. The SMO film of the thin film gas sensor is an thin film (e.g., between 90 nanometers and 110 nanometers thick), and the SMO film of the bulk film gas sensor is an thick film (e.g., between 5 micrometers and 20 micrometers thick). The gas sensor device detects gases with large molecules based on a variation between resistances of the SMO thin film and the SMO thick film.

Abstract: An electronic device comprising: a semiconductor body of silicon carbide, SiC, having a first and a second face, opposite to one another along a first direction, which presents positive-charge carriers at said first face that form a positive interface charge; a first conduction terminal, which extends at the first face of the semiconductor body; a second conduction terminal, which extends on the second face of the semiconductor body; a channel region in the semiconductor body, configured to house, in use, a flow of electrons between the first conduction terminal and the second conduction terminal; and a trapping layer, of insulating material, which extends in electrical contact with the semiconductor body at said channel region and is designed so as to present electron-trapping states that generate a negative charge such as to balance, at least in part, said positive interface charge.