Abstract: System and method for virtualization of computing elements. A hypervisor provides virtualization of one or more peripherals for one or more computing elements. The hypervisor may further allow separate instances of an operating system to be suspended on one computing element to allow another application to be processed by replacing the state information of the computing element. The suspended instance may be resumed on the same or a different computing element.

Abstract: A method for designing an electronic circuit including determining at least one hold violation in a net routing; inserting a routing blockage associated with each at least one hold violation; de-routing the determined net-routing and re-routing the determined net-routing dependent on at least the routing blockage.

Abstract: A voltage booster device may include a plurality of multiplication stages arranged in a sequence so that an input terminal of each multiplication stage, with the exception of a first multiplication stage, is connected to an output terminal of a previous multiplication stage. Each multiplication stage may include pumping circuitry for accumulating an electric charge proportional to a pump voltage value of the multiplication stage. Each multiplication stage may also include a phase signal generating circuit for switching the multiplication stages between a transfer phase and a maintaining phase. In at least one of the stages, the pumping circuitry may include at least two series connected charge accumulators. A terminal may be shared between the charge accumulators and may be connected through biasing circuitry to an output terminal of a previous multiplication stage for forcing the charge accumulators within a threshold potential drop value.

Abstract: A circuit for processing a clock signal including first and second clock edges of different polarities, the circuit including an inverter for inverting a first clock edge to generate an inverted first clock edge and inverting a second clock edge to generate an inverted second clock edge; a first pass gate for receiving the inverted clock edge and outputting a first trigger signal of a first polarity; and a second pass gate for receiving the second clock edge and outputting a second trigger signal of the first polarity, wherein the second pass gate is controlled to open responsive to the inverted second clock edge; whereby the delay between the first clock edge and the first trigger signal is substantially equal to the delay between the second clock edge and second trigger signal.

Abstract: A transmitter having at least one channel comprising a first differential circuit driven by a differential data signal, the first differential circuit configured to output the differential data at a first and second output and a first control circuit coupled between the first differential circuit and the first and second output, the first control circuit driven by a drive voltage.

Abstract: A memory circuit includes a memory cell configured to be re-writable. A write enable circuit is configured to enable writing a signal via a pair of bit lines to the memory cell depending on a write signal. A charge supply circuit is configured to supply a charge to at least one of the pair of bit lines. A charge supply controller is configured to control the charge supply circuit to supply the charge dependent on at least one of the temperature of the memory circuit and the potential difference supply of the memory circuit.

Abstract: A method may be for controlling communication between a UICC, a handset including the UICC, and an external device associated with an external application running outside the handset. The method may include switching on the UICC by the handset, executing a first initialization procedure by the handset to establish a first communication session between the handset and the UICC, establishing a second communication session between the UICC and the external device, and executing a second initialization procedure between the external device and the UICC. The method may include retrieving an attribute of the handset by the UICC after completing the first initialization procedure, retrieving an attribute of the external device via the handset by the UICC after the completing the second initialization procedure, and comparing the attribute of the handset with the attribute of the external device to distinguish the second communication session from the first communication session.

Abstract: A circuit comprising: a device determiner configured to, in a first mode of operation, receive a device selection signal via at least one of: at least one control line and at least one signal line; and a device router configured to, in a second mode of operation, route signals between the at least one of: at least one control line and at least one signal line and at least one device dependent on the device selection signal.

Abstract: A method for integrating a bipolar injunction transistor in a semiconductor chip includes the steps of forming an intrinsic base region of a second type of conductivity extending in the collector region from a main surface through an intrinsic base window of the sacrificial insulating layer, forming an emitter region of the first type of conductivity extending in the intrinsic base region from the main surface through an emitter window of the sacrificial insulating layer, removing the sacrificial insulating layer, forming an intermediate insulating layer on the main surface, and forming an extrinsic base region of the second type of conductivity extending in the intrinsic base region from the main surface through an extrinsic base window of the intermediate insulating layer

Abstract: A switching circuit includes a source follower current mirror having an input, an output, a first source terminal, a bias terminal, and a second source terminal; a current source coupled to the input of the current mirror; an output terminal coupled to the output of the current mirror; a first bias transistor coupled to the first source terminal; a second bias transistor coupled to bias terminal of the current mirror; and a driver transistor coupled to the second source terminal. An input transistor in the current mirror is sized such that the input voltage is substantially independent of the supply voltage.

Abstract: In a network-on-chip (NoC) system, multiple data messages may be transferred among modules of the system. Power consumption due to the transfer of the messages may affect a cost and overall performance of the system. A described technique provides a way to reduce a volume of data transferred in the NoC system by exploiting redundancy of data messages. Thus, if a data message to be sent from a source in the NoC includes so-called “zero” bytes that are bytes including only bits set to “0,” such zero bytes may not be transmitted in the NoC. Information on whether each byte of the data message is a zero byte may be recorded in a storage such as a data structure. This information, together with non-zero bytes of the data message, may form a compressed version of the data message. The information may then be used to uncompress the compressed data message at a destination.

Abstract: A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a result, the spacing between the electrodes may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region.

Abstract: Nanosized filamentary carbon structures (CNTs) nucleating over a catalyzed surface may be grown in an up-right direction reaching a second surface, spaced from the first surface, without the need of applying any external voltage source bias. The growth process may be inherently self-stopping, upon reaching a significant population of grown CNTs on the second surface. A gap between the two surfaces may be defined for CNT devices being simultaneously fabricated by common integrated circuit integration techniques. The process includes finding that for separation gaps of up to a hundred or more nanometers, a difference between the respective work functions of the materials delimiting the gap space, for example, different metallic materials or a doped semiconductor of different dopant concentration or type, may produce an electric field intensity orienting the growth of nucleated CNTs from the surface of one of the materials toward the surface of the other material.

Abstract: An integrated circuit includes input circuitry for receiving a radio frequency digital signal, output circuitry capable of delivering a radio frequency analog signal, and a processing stage coupled between the input circuitry and the output circuitry and including several processing channels in parallel. Each processing channel may include a voltage switching block the input of which is coupled to the input circuitry and a transmission line substantially of the quarter-wave type at the frequency of the radio frequency analog signal coupled in series between the output of the voltage switching block and the output circuitry.

Abstract: A Micro Electro Mechanical Systems resonance device includes a substrate, and an input electrode, connected to an alternating current source having an input frequency. The device also includes an output electrode, and at least one anchoring structure, connected to the substrate. The device further includes a vibratile structure connected to an anchoring structure by at least one junction, having a natural acoustic resonant frequency. The vibration under the effect of the input electrode, when it is powered, generates, on the output electrode, an alternating current wherein the output frequency is equal to the natural frequency. The vibratile structure and/or the anchoring structure includes a periodic structure. The periodic structure includes at least first and second zones different from each other, and corresponding respectively to first and second acoustic propagation properties.

Abstract: Controlling a resonant switching system, which includes a first switch and a second switch in a half-bridge configuration for driving a resonant load. A corresponding control system includes command means for switching on and switching off the switches alternatively according to a working frequency of the switching system. The control system includes detection means for detecting a zeroing of a working current being supplied by the switching system to the resonant load in a temporal observation window; the observation window follows each switching off of at least one of the switches, and has a length equal to a fraction of a to working period of the switching system. Correction means are then provided for modifying the working frequency in response to each detection of the zeroing in the observation window.

Abstract: The method is to fabricate a microelectronic device with an integrated antenna. This method may include forming at least a first semiconducting layer on a substrate, forming in at least one zone of the first semiconducting layer of a structure to limit the circulation of current in the zone of the first semiconducting layer, forming a plurality of layers on the semiconducting layer and at least one antenna in the plurality of layers, with the antenna being formed opposite the zone. The antenna may be operable at radio frequencies above 10 GHz, and may have an improved emission efficiency.

Abstract: A System-on-Chip (SoC) may include logic blocks connected to each other and to external connections, and a hardware debug infrastructure logic connected to the logic blocks and for performing functional changes to a design layout of the SoC. The hardware debug infrastructure logic may include software re-configurable modules based upon the logic blocks obtained from substituting a mask programmable ECO base cell configured as a functional logic cell for a logic cell in the design layout.

Abstract: The invention concerns a biasing circuit for controlling the current flowing through a differential pair (102, 104) comprising: a first branch comprising a first resistor (306), a first transistor device (308) and a second transistor device (310) coupled in series; a second branch comprising a second resistor (312), a third transistor device (314) and a fourth transistor device (316) coupled in series, a control node of the third transistor device being coupled to a first node (324) between the first resistor and the first transistor device, and a control node of the first transistor device being coupled to a second node (322) between the second resistor and the third transistor device; and an operational amplifier (318) having an output node coupled to control nodes of the second and fourth transistor devices, said output node providing a output signal (Vc) for controlling the current flowing through said differential pair.

Abstract: An analog T switch is disclosed which has high isolation in the off state. The analog T switch can include series-connected NMOS transistors having separate gate control. The gates of the NMOS transistors can be isolated from one another to improve off state isolation of the analog T switch. The analog switch can include series-connected PMOS transistors having separate gate control. The gates of the PMOS transistors can be isolated from one another to improve off state isolation of the analog T switch. The analog T switch can include a substrate voltage control circuit that controls the voltage of the substrate regions in which the PMOS transistors are formed. The substrate voltage control circuit can isolate the substrate regions of the PMOS transistors from one another in the off state to improve off state isolation of the analog T switch.