Patents Assigned to STMicroelectronics
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Publication number: 20140029316Abstract: A method for controlling a switching regulator includes defining a waiting time during which a trigger signal corresponding to a recirculation signal of the switching regulator is ignored holding a control switch in an open condition, and detecting a number of local valleys of the recirculation signal during the waiting time. In particular, defining the waiting time is performed for each switching cycle by adding a first value, which is determined on the basis of a load on the regulator, to a second variable value, which is proportional to the number valleys detected during the waiting time of the preceding switching cycle.Type: ApplicationFiled: July 25, 2013Publication date: January 30, 2014Applicant: STMicroelectronics S.r.l.Inventor: Claudio Adragna
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Publication number: 20140028609Abstract: A touch controller includes a touch frame processing (TFP) component that receives sensor signals containing information about a touch point on a touch screen. The TFP component processes the sensor signals to generate touch information associated with each touch point. The touch information includes a location and the association of one of a touch-in, touch-out, and touch-motion event. A touch coordinate processing (TCP) component receives touch information from the TFP component and determines whether to report the touch information associated with a current touch point. The TCP component determines a difference between the location of the current touch point and a previously detected touch point and assigns a motion status to each touch event and reports the touch information when the difference is greater than a motion tolerance and when less than the motion tolerance selectively blocks or reports the touch information as a function of the corresponding motion status.Type: ApplicationFiled: July 30, 2012Publication date: January 30, 2014Applicant: STMICROELECTRONICS ASIA PACIFIC PTE LTD.Inventor: Maria Rhea Santos
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Publication number: 20140029512Abstract: A wireless local area network system establishes a PASSPOINT™ connection between a mobile station and a hotspot using an enhanced single SSID method or an enhanced dual SSID method. In the dual SSID method, an access point associates and authenticates a mobile device to a secondary SSID of the access point during enrollment and provisioning. After enrollment, the access point authenticates the mobile station to a primary SSID of the access point using the credential that the mobile station received from an online sign-up (“OSU”) server in connection with the secondary SSID. In the single SSID method, an access point performs two levels of authentication. During authentication, communications are limited to an 802.1x controlled port running on the mobile station and access point. After a first authentication, communications between the OSU server and the mobile station are unblocked. After the second authentication, all traffic from the mobile station is unblocked.Type: ApplicationFiled: November 26, 2012Publication date: January 30, 2014Applicant: STMICROELECTRONICS, INC.Inventors: Liwen Chu, George A. Vlantis
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Publication number: 20140027881Abstract: An electric charge flow element including, on an insulating support, a stack of a first electrode, of a dielectric layer having at least one portion capable of letting charges flow by tunnel effect, and of a second electrode, wherein at least one of the electrodes is made of undoped polysilicon.Type: ApplicationFiled: July 29, 2013Publication date: January 30, 2014Applicant: STMicroelectronics (Rousset) SASInventors: Fabrice Marinet, Pascal Fornara
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Publication number: 20140029146Abstract: Disclosed herein is a device comprising a protection circuit configured to protect against a polarity reversal of the input DC power supply voltage, the protection circuit comprising an N-channel main transistor having a source coupled to an input terminal and having a drain coupled to an output terminal, a command circuit configured to render the main transistor blocked in the event of a polarity reversal and conducting otherwise, and a control circuit configured to dynamically adjust the bias of substrate regions of respective components connected to the main transistor by connecting the substrate regions either to the source or to the drain of the main transistor according to the value of the voltages present at the source and the drain of the main transistor and the type of conductivity of the substrate regions.Type: ApplicationFiled: September 30, 2013Publication date: January 30, 2014Applicant: STMicroelectronics (Rousset) SASInventor: Antoine Pavlin
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Patent number: 8639373Abstract: A method of designing a desired modular package assembly: determining the configuration and dimensions of the assembly from received user input design data, the assembly having a protective modular package cover with first and second fastening sections, subassembly receiving sections disposed between the fastening sections and having a cross member formed along the underside of the protective modular package cover and configured to receive a subassembly, and one or more subassemblies to be received by the subassembly receiving sections; determining an adhesive deposition strategy for deposition of an adhesive layer to the cross members of the subassembly receiving sections sufficient to affix the top side of the subassemblies to the cross members on the underside of the subassembly receiving sections; and incorporating the configuration and dimensions of the modular package assembly and the adhesive deposition strategy into a manufacturing assembly process configured to manufacture the modular package assemblType: GrantFiled: October 13, 2010Date of Patent: January 28, 2014Assignees: STMicroelectronics, Inc., RJR Polymers, Inc.Inventors: Craig J. Rotay, John Ni, David Lam, David Lee DeWire, John W. Roman, Richard J. Ross
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Patent number: 8638132Abstract: A transmission channel includes at least one high voltage buffer block having buffer transistors and respective buffer diodes, being electrically coupled between respective voltage reference terminals, these buffer transistors being also coupled to a clamping block, in turn including clamping transistors connected to at least one output terminal of this transmission channel through diodes coupled to prevent the body diodes of the clamping transistors from conducting. The transmission channel includes at least one reset circuit having diodes and being electrically coupled between circuit nodes of the high voltage buffer block and of the clamping block, these circuit nodes being in correspondence with conduction terminals of the transistors comprised into the high voltage buffer block and into the clamping block.Type: GrantFiled: June 29, 2012Date of Patent: January 28, 2014Assignee: STMicroelectronics S.r.l.Inventors: Sandro Rossi, Giulio Ricotti
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Patent number: 8637352Abstract: Ball grid array to pin grid array conversion methods are provided. An example method can include coupling a plurality of solder balls to a respective plurality of pin grid array contact pads. Each of the plurality of solder balls is encapsulated in a fixed material. A portion of the plurality of solder balls and a portion of the fixed material is removed to provide a plurality of exposed solder balls. The exposed solder balls are softened and each of a plurality of pin members is inserted in a softened, exposed, solder ball. The plurality of pin members forms a pin grid array package.Type: GrantFiled: November 22, 2011Date of Patent: January 28, 2014Assignee: STMicroelectronics Pte Ltd.Inventor: Kim-Yong Goh
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Patent number: 8638617Abstract: A switching circuit comprises a control and bias stage configured for receiving a first input voltage signal, a second input voltage signal and a selection signal and for generating therefrom a first bulk bias signal substantially equal to the first input voltage signal or to the second input voltage signal depending on the selection signal. The switching circuit further comprises a switching stage connected to the control and bias stage, including a transistor having a bulk terminal, and configured for receiving the bulk bias signal and generating an output signal having the first input voltage signal when the selection signal indicates the selection of the first input voltage signal or having the second input voltage signal when the selection signal indicates the selection of the second input voltage signal. The bulk bias signal is electrically coupled to the bulk terminal of the transistor.Type: GrantFiled: July 15, 2011Date of Patent: January 28, 2014Assignee: STMicroelectronics S.r.l.Inventor: Carmelo Chiavetta
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Patent number: 8638038Abstract: According to an embodiment of the present disclosure, a plurality of light-emitting diode (LED) modules in series are monitored. When an LED module is detected as failing or operating inadequately, a bypass switch removes the particular LED module from the series and the voltage provided to the series is modified. When the LED modules are detected as having too high of a temperature, the current provided to the LED modules is limited.Type: GrantFiled: November 22, 2011Date of Patent: January 28, 2014Assignees: STMicroelectronics (Shenzhen) R&D Co., Ltd., STMicroelectronics Asia Pacific PTE, Ltd.Inventors: Henry Ge, Leslie Leong
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Patent number: 8637369Abstract: An embodiment of a method for manufacturing a power device with conductive gate structures inside etched trenches. Such trenches include sidewalls and a bottom, wherein covering the sidewalls and the bottom of the trench is a first insulating coating layer. In the formation of the conductive gate structure, openings within the first material in the trench are made such that a conductive central region of a second conductive material having a different resistivity than the first conductive material are able to be electrically coupled together through a plurality of conductive bridges between said second conductive coating layer and said conductive central region.Type: GrantFiled: March 1, 2012Date of Patent: January 28, 2014Assignee: STMicroelectronics S.R.L.Inventors: Angelo Magri, Antonino Sebastiano Alessandria, Stefania Fortuna, Leonardo Fragapane
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Patent number: 8638127Abstract: Embodiments related to an undervoltage detector are described and depicted. An undervoltage detector is formed to detect a low input bias voltage with a voltage divider network including first and second series circuits of semiconductor devices coupled to terminals of the input bias voltage source, and a resistor voltage divider including first and second voltage divider resistors coupled in series with the first and second series circuits. A ratio representing the numbers of semiconductor devices in the series circuits is substantially equal to a ratio of resistances in the resistor voltage divider. The equality of the ratios may be corrected by the presence of other resistances in the undervoltage detector. The semiconductor devices are each coupled in a diode configuration. The first series circuit is coupled to a current mirror to provide a bias current for a comparator that produces an output signal for the undervoltage detector.Type: GrantFiled: November 29, 2010Date of Patent: January 28, 2014Assignee: STMicroelectronics (Shenzhen) R&D Co., LtdInventors: Ni Zeng, Da Song Lin
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Patent number: 8638175Abstract: A circuit including a first oscillator configured to oscillate at a first frequency; a second oscillator configured to oscillate at a second frequency, the second frequency being different from and one of a harmonic or sub-harmonic of the first frequency; and a coupling between the first oscillator and the second oscillator configured to injection lock at least one of the first oscillator and second oscillator to the other of the first oscillator and second oscillator.Type: GrantFiled: July 6, 2011Date of Patent: January 28, 2014Assignee: STMicroelectronics International N.V.Inventor: Prashant Dubey
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Publication number: 20140023198Abstract: The present invention relates to a method and a circuit for testing a tweeter, said tweeter being part of a loudspeaker system, wherein the method includes the steps of: applying a high-frequency voltage signal to one terminal of said tweeter, said high-frequency voltage signal being generated by first electronic means; applying a constant voltage signal to the other terminal of said tweeter, said constant voltage signal being generated by second electronic means; measuring a current Iload that flows through said tweeter into said second electronic means; determining a connect/disconnect state of said tweeter from the value of said current.Type: ApplicationFiled: September 25, 2013Publication date: January 23, 2014Applicant: STMicroelectronics S.r.l.Inventors: Edoardo Botti, Giovanni Gonano, Pietro Mario Adduci
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Publication number: 20140025869Abstract: The present invention relates to a method and system for controlling a number of writing cycles supported by a cell or portion (11) of a non volatile memory (4) of an IC Card (10), including the steps of counting write accesses to the memory portion (11) and storing a first counter (21) of the write accesses in another portion (21) of said non volatile memory (4). The method comprises coupling the first counter (21) to a second counter or value (31) associated to a RAM (4) (Random Access Memory) of the IC Card (10), wherein the second counter or value (31) is updated each time the write accesses occur on said cell or portion (11) to be controlled and the first counter (21) is written in the another portion of non volatile memory only when the second counter or value (21) corresponds to a predetermined value.Type: ApplicationFiled: December 23, 2011Publication date: January 23, 2014Applicant: STMICROELECTRONICS INTERNATIONAL NVInventors: Amedeo Veneroso, Francesco Varone, Vitantonio Distasio, Pasquale Vastano
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Publication number: 20140024203Abstract: The deposition method comprises providing a substrate with a first mono-crystalline zone made of a semiconductor material and a second zone made of an insulating material. During a passivation step, a passivation atmosphere is applied on the substrate so as to cover the first zone with doping impurities. During a deposition step, gaseous silicon and/or germanium precursors are introduced and a doped semiconductor film is formed. The semiconductor film is mono-crystalline over the first zone and has a different texture over the second zone. During an etching step, a chloride gaseous precursor is applied on the substrate so as to remove the semiconductor layer over the second zone.Type: ApplicationFiled: November 19, 2010Publication date: January 23, 2014Applicants: Commissariat a L'Energie Atomique Et Aux Energies Alternatives, STMICROELECTRONICS, INC.Inventors: Vincent Destefanis, Nicolas Loubet
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Publication number: 20140021564Abstract: An integrated microelectromechanical structure is provided with a driving mass, anchored to a substrate via elastic anchorage elements and designed to be actuated in a plane with a driving movement; and a first sensing mass and a second sensing mass, suspended within, and coupled to, the driving mass via respective elastic supporting elements so as to be fixed with respect thereto in said driving movement and to perform a respective detection movement in response to an angular velocity. In particular, the first and the second sensing masses are connected together via elastic coupling elements, configured to couple their modes of vibration.Type: ApplicationFiled: September 25, 2013Publication date: January 23, 2014Applicant: STMicroelectronics S.r.l.Inventors: Gabriele Cazzaniga, Luca Coronato, Giacomo Calcaterra
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Publication number: 20140021586Abstract: A method manufactures a capacitor having polycrystalline dielectric layer between two metallic electrodes. The dielectric layer is formed by a polycrystalline growth of a dielectric metallic oxide on one of the metallic electrodes. At least one polycrystalline growth condition of the dielectric oxide is modified during the formation of the polycrystalline dielectric layer, which results in a variation of the polycrystalline properties of the dielectric oxide within the thickness of said layer.Type: ApplicationFiled: September 25, 2013Publication date: January 23, 2014Applicant: STMicroelectronics (Crolles 2) SASInventor: Mickael Gros-Jean
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Publication number: 20140021872Abstract: A circuit capable of receiving, in series with at least one light-emitting diode, a rectified A.C. voltage, comprising: a first gate turn-off thyristor connected to first and second terminals of the circuit; and a control circuit for turning off the first thyristor when the voltage between the first and second terminals exceeds a threshold.Type: ApplicationFiled: September 20, 2013Publication date: January 23, 2014Applicant: STMicroelectronics (Tours) SASInventors: Laurent Gonthier, Antoine Passal
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Publication number: 20140023167Abstract: Gain and phase correction parameters are estimated by calculating the error between the value of at least one received bin and a probable value of the transmitted bin, and by correlating this error with the conjugate value of the rotationally compensated symmetrized bin.Type: ApplicationFiled: July 22, 2013Publication date: January 23, 2014Applicant: STMicroelectronics (Grenoble 2) SASInventor: Jacques Meyer