Abstract: The present disclosure relates to an Apparatus comprising at least one resistive voltage divider and at least two inverters, wherein the resistive voltage divider is coupled between a first supply potential terminal (VDD) and a second supply potential terminal (VSS), wherein the voltage divider comprises a first resistor, a second resistor, a third resistor and a fourth resistor being serially connected, and wherein a first connection point of the second resistor and the third resistor is connected to an voltage input, and a second connection point of the first resistor and the second resistor is connected to the input side of a first inverter, and a third connection point of the third resistor and the fourth resistor is connected to the input side of a second inverter, wherein the first inverter and the second inverter are configured to provide a first output voltage if a first voltage is applied to the voltage input, and the first inverter and the second inverter are configured to provide a second output vo

Abstract: This invention includes signaling schemes for communicating the PDSCH muting configuration from the eNodeB to its UEs so that they can measure inter-cell CSI if configured. The base station transmits to each served user equipment a number signal indicating a number of allowed muting configurations, parameters for each allowed muting configuration and an enable/disable signal. Each served user equipment mutes or does not mute a physical downlink shared channel according to one of the allowed muting configurations and the state of a corresponding bit of the enable/disable signal.

Abstract: Single user and multiuser MIMO transmission in a cellular network may be performed by a base station (eNB) transmitting either one, two, or more transmission layers. A user equipment (UE) receives a reference symbol from the base station. The UE processes the reference symbol with one or more of a plurality of precoding matrices to form a plurality of channel quality indices (CQI). The UE provides feedback to the eNB comprising one or more feedback CQI selected from the plurality of CQI and one or more precoding matrix indicators (PMI) identifying the one or more precoding matrices used to form each of the one or more feedback CQIs for two or more ranks.

Abstract: A digital system includes a spur calculator that computes harmonics of a frequency of a digital clock signal and that identities a harmonic that lies in a frequency band of operation of a radio frequency circuit. A duty cycle computation module receives the harmonic and computes a duty cycle for the harmonic. Further, a clock generator that is coupled to the duty cycle computation block generates a digital clock signal of the frequency and with the duty cycle such that amplitude of spur caused due to the harmonic is suppressed.

Abstract: Arrangements for plating a single surface of a thin foil are described. In one aspect, a metal foil is wrapped tightly at least partially around a plating solution drum. The drum is partially immersed in a plating solution such that the waterline of the metal plating solution is below a break point where the metallic foil strip begins to unwind from the plating solution drum. With this arrangement, one side of the metallic foil strip is exposed to the metal plating solution, while the opposing back side of the metallic foil strip does not come in substantial contact with the metal plating solution. In this manner, the exposed side of the foil is plated while the back surface of the foil is not plated. The drum may be rotated to convey the foil through the plating solution.

Abstract: An orthotic device comprises a flexible support structure comprising at least one surface for contacting a body part of a user, a plurality of pressure sensors configured for coupling to a microcontroller, and a plurality of displacement regions. Each region defines a portion of said flexible support structure, wherein each portion includes at least one sensor disposed on or below the at least one surface and at least one electrically deformable unit. Each unit comprises at least one electroactive material and is configured for coupling to the microcontroller and to a power source. The device is dynamically adjustable to change its shape and support properties, when an electrical voltage is applied to the electroactive material under the control of a microcontroller.

Abstract: In a first embodiment a Test Access Port (TAP) of IEEE standard 1149.1 is allowed to commandeer control from a Wrapper Serial Port (WSP) of IEEE standard P1500 such that the P1500 architecture, normally controlled by the WSP, is rendered controllable by the TAP. In a second embodiment (1) the TAP and WSP based architectures are merged together such that the sharing of the previously described architectural elements are possible, and (2) the TAP and WSP test interfaces are merged into a single optimized test interface that is operable to perform all operations of each separate test interface. One approach provides for the TAP to maintain access and control of the TAP instruction register, but provides for a selected data register to be accessed and controlled by either the TAP+ATC (Auxiliary Test Control bus) or by the discrete CaptureDR, UpdateDR, TransferDR, ShiftDR, and ClockDR WSP data register control signals.

Abstract: Relayed nodes communicate with a target hub using a relaying node in a two-hop star network. The relayed nodes transmit a first encapsulating frame having a payload that comprises an encapsulated frame. The first encapsulating frame is formatted as a one-hop communication between the relayed node and the relaying node. The encapsulated frame is formatted as a one-hop communicate between the relayed node and the target hub. The relaying node generates a second encapsulating frame having a payload that comprises the encapsulated frame from the relayed node. The second encapsulating frame is formatted as a one-hop communication from between the relaying node and the target hub. The target hub sends frames to the relayed node in a similar manner through the relaying node. The target hub and relaying node communicate during scheduled uplink, downlink, or bilink allocations, and the relaying node and the relayed node communicate during scheduled bilink allocations.

Abstract: Traditionally, for multi-band communication systems, independent signal chains for each of the different bands are employed. By using such an architecture, there are a large number of components, and there is substantial power consumption. Here, transmit processor is provided that enables transmission across multiple bands using few components (namely, fewer signal chains), while also provided for digital predistortion.

Abstract: Traditionally, buck-boost switching regulators with bridge topologies have been avoided due to their inability to seamlessly transition between buck mode and boost mode. Here, however, a buck-boost switching regulator with a bridge topology has been provided, which has an improved controller. Namely, a processor (such as a digital signals processor or DSP) provides digital control for the bridge that reduces ripple current or variations in the inductor current by adjusting phase relationships between corresponding buck and boost switches in a bridge or buck-boost mode.

Abstract: A method of forming an integrated circuit (IC) having at least one MOS device includes forming a SiON gate dielectric layer on a silicon surface. A gate electrode layer is deposited on the SiON gate layer and then patterning forms a gate stack. Exposed gate dielectric sidewalls are revealed by the patterning. A supplemental silicon oxide layer is formed on the exposed SiON sidewalls followed by nitriding. After nitriding, a post nitridation annealing (PNA) forms an annealed N-enhanced SiON gate dielectric layer including N-enhanced SiON sidewalls, wherein along lines of constant thickness a N concentration at the N-enhanced SiON sidewalls is ? the N concentration in a bulk of the annealed N-enhanced SiON gate layer ?2 atomic %. A source and drain region on opposing sides of the gate stack are formed to define a channel region under the gate stack.

Abstract: An integrated circuit (IC) includes a substrate having a top semiconductor surface including at least one MOS device including a source and a drain region spaced apart to define a channel region. A SiON gate dielectric layer that has a plurality of different N concentration portions is formed on the top semiconductor surface. A gate electrode is on the SiON layer. The plurality of different N concentration portions include (i) a bottom portion extending to the semiconductor interface having an average N concentration of <2 atomic %, (ii) a bulk portion having an average N concentration >10 atomic %, and (iii) a top portion on the bulk portion extending to a gate electrode interface having an average N concentration that is ?2 atomic % less than a peak N concentration of the bulk portion.

Abstract: A test architecture accesses IP core test wrappers within an IC using a Link Instruction Register (LIR). An IEEE P1500 standard is in development for providing test access to these individual cores via a test structure called a wrapper. The wrapper resides at the boundary of the core and provides a way to test the core and the interconnections between cores. The test architecture enables each of the plural wrappers in the IC, including wrappers in cores embedded within other cores, with separate enable signals.

Abstract: A tester module for automatic test equipment (ATE) includes test instruments for testing an integrated circuit device under test (DUT). A plurality of sensors include sensors coupled to or proximate to the test instruments for detecting a plurality of different maintenance triggers associated with the test instruments. A memory stores code including operating system code for controlling the test instruments and for implementing a system maintenance compliance tool. A processor is coupled to the test instruments the sensors and the memory. The processor runs the operating system code including the system maintenance compliance tool. The system maintenance compliance tool upon receiving notification of at least a first maintenance trigger automatically blocks the ATE being used for the testing. The system maintenance compliance tool can include a listing of needed maintenance actions associated with the maintenance triggers that when completed automatically releases the ATE to allow resumption of testing.

Abstract: A test architecture accesses IP core test wrappers within an IC using a Link Instruction Register (LIR). An IEEE P1500 standard is in development for providing test access to these individual cores via a test structure called a wrapper. The wrapper resides at the boundary of the core and provides a way to test the core and the interconnections between cores. The test architecture enables each of the plural wrappers in the IC, including wrappers in cores embedded within other cores, with separate enable signals.

Abstract: An integrated circuit can have plural core circuits, each having a test access port that is defined in IEEE standard 1149.1. Access to and control of these ports is though a test linking module. The test access ports on an integrated circuit can be arranged in a hierarchy with one test linking module controlling access to plural secondary test linking modules and test access ports. Each secondary test linking module in turn can also control access to tertiary test linking modules and test access ports. The test linking modules can also be used for emulation.

Abstract: A method and apparatus for designing a lithography mask set which provides polygon features of a desired size at advanced technology nodes, for example, using live features and dummy features. A dummy feature can be formed within a confined space by specifying an allowable dummy feature length even though the feature length may result in contact between the dummy feature and the live feature. After specifying the dummy feature length, a pattern generation (PG) extract can be performed to pull back the dummy feature away from the live feature by an allowable distance. The PG exact process can result in a shorter dummy feature which has a length which is shorter than can be specified directly by design rules, but which passes rule checking.

Abstract: A method includes obtaining an input signal and demodulating phase contamination in the input signal to generate a baseband signal. The method also includes modulating the input signal based on the baseband signal to generate an output signal, where the output signal has less phase contamination than the input signal. The phase contamination could be demodulated using a phase demodulator or a frequency modulation (FM) detector. A portion of the input signal could be down-converted to a lower frequency, and the phase contamination in the down-converted portion of the input signal could be demodulated. Additional phase contamination in the output signal can be demodulated and used to regulate a level of the baseband signal used during modulation of the input signal. The output signal could have less phase noise or period jitter than the input signal.

Abstract: A process of estimating an admittance of an RF component using a ladder network with alternating series and parallel components by making three VSWR measurements and computing three admittance circle solutions in the complex admittance plane. The admittances circles are transformed through reference planes of the ladder network to obtain three RF component admittance circles, then estimating the RF component admittance using three nearest intersections of the three RF component admittance circles. Reference planes are defined immediately upstream and immediately downstream of each component of the ladder network. The transforms are performed using lumped parameter models of the series and parallel components of the ladder network.

Abstract: A transistor includes a semiconductor substrate includes having a gate hardmask over the gate electrode layer during the formation of transistor source/drain regions. An independent work function adjustment process implants Group IIIa series dopants into a gate polysilicon layer of a PMOS transistor and implants lanthanide series dopants into a gate polysilicon layer of a NMOS transistor.