Abstract: Microelectronics have now developed to the point where radiation within the terahertz frequency range can be generated and used. Here, an integrated circuit or IC is provided that includes a phased array radar system, which uses terahertz radiation. In order to accomplish this, several features are employed; namely, a lower frequency signal is propagated to transceivers, which multiplies the frequency up to the desired frequency range. To overcome the losses from the multiplication, an injection locked voltage controlled oscillator (ILVCO) is used, and a high frequency power amplifier (PA) can then be used to amplify the signal for transmission.

Abstract: In a method and apparatus for fabricating a semiconductor device having a flexible tape substrate, a hole is punched in the flexible tape substrate. The flexible tape substrate includes a metal layer attached to a polyimide layer without an adhesive there between. A cover is placed on the metal layer to cap a base of the hole. A metal is deposited on the cover exposed at the base of the hole, the metal being used to form a bond with the metal layer. The metal being deposited causes the hole to be plugged up to a selective height. Upon removal of the cover, the metal may also be deposited on the metal layer to increase a thickness of the metal layer.

Abstract: A transmitter and communication system are disclosed. A first component operable to determine an active interference cancellation value for each of a plurality of active interference cancellation tones and a protection-edge value for each of a plurality of protection-edge tones based on optimizing active interference cancellation, and further based on constraining an average power of the active interference cancellation values and the protection-edge values to less than or equal to a maximum power level, and on a plurality of data values. A second component is operable to transform a sequence of tones to a time domain signal, the sequence of tones comprised of the active interference cancellation tones, the protection-edge tones, and a plurality of data tones, the data tones containing the data values. A third component operable to transmit an orthogonal frequency division multiplex signal based on the time domain signal.

Abstract: A clock divider circuit. The clock divider receives m input clock signals each of the same frequency. Each input clock signal after the first has a phase offset of 2 ?/m from the previous input clock signal. The clock divider divides the frequency of the input clock signals by an integer of division K. The clock divider includes a counter that receives the first input clock signal and provides one or more count signals. The clock divider also includes m flip-flops, of which a first flip-flop receives the first input clock signal at its clock input and provides a first clock output signal. Each flip-flop after the first receives an input clock signal at its clock input and provides a clock output signal, each clock output signal after the first having a 2 ?K/m phase offset from the previous clock output signal.

Abstract: A device test architecture and a reduced device test interface are provided to enable efficient testing of embedded cores and other circuits within devices. The reduced device test interface is achieved using a double data rate (DDR) signaling technique between the tester and the device. The DDR test interface allows the tester to interface to test circuits within the device, such as IEEE 1500 and/or IEEE 1149.1 test circuits, to provide high test data bandwidth to the test circuits using a minimum of test interface signals. The test architecture includes compare circuits that allow for comparison of test response data to be performed within the device. The test architecture further includes a memory for storing the results of the test response comparisons. The test architecture includes a programmable test controller to allow for various test control operations by simply inputting an instruction to the programmable test controller from the external tester.

Abstract: A method of forming an electronic assembly includes attaching a backside metal layer the bottomside of a semiconductor die. An area of the backside metal layer matches an area of the bottomside of the die. A die pad and leads are encapsulated within the molding material. The leads include an exposed portion that includes a bonding portion. A gap exposes the backside metal layer along a bottom surface of the package. Bond wires couple the pads on the topside of the die to the leads and the bonding portions. Packaged semiconductor device is soldered to a printed circuit board (PCB). The backside metal layer and the bonding portions of the leads are soldered substrate pads on said PCB.

Abstract: Embodiments of the invention provide a system and method for chip to chip communications in electronic circuits. A router or switch receives data packets at input port ASICs. A routing table on the input port ASIC or on a routing ASIC is used to identify a destination port ASIC based upon header information in the data packet. The data packet is transmitted from the input port ASIC to the destination port ASIC using millimeter wave signals that are transmitted across a waveguide or a wireless interface.

Abstract: An integrated circuit and method of generating a layout for an integrated circuit in which circuitry peripheral to an array of repetitive features, such as memory or logic cells, is realized according to devices constructed similarly as the cells themselves, in one or more structural levels. The distance over which proximity effects are caused in various levels is determined. Those proximity effect distances determine the number of those features to be repeated outside of and adjacent to the array for each level, within which the peripheral circuitry is constructed to match the construction of the repetitive features in the array.

Abstract: Systems and methods for fine symbol timing estimation are disclosed herein. In one embodiment, a wireless receiver includes a differential detector, a correlator, a coarse symbol timing estimator, and a fine symbol timing estimator. The differential detector is configured to detect phase differences in a received preamble signal modulated using differential phase shift keying. The correlator is configured to correlate symbol values output by the differential detector against a reference sequence. The coarse symbol timing estimator is configured to generate a coarse symbol timing estimate, and to generate a coarse timing sample symbol index value corresponding to the coarse symbol timing estimate. The fine symbol timing estimator is configured to generate a fine symbol timing estimate that is more accurate than the coarse symbol timing estimate based on the coarse timing sample symbol index value and correlation samples at index values preceding and succeeding the coarse timing sample index value.

Abstract: In order to provide a home user with cost-effective PC processing capability, the home user is provided with a terminal which has only sufficient processing capability to communicate with a service provider over a network. Any processing and program execution is performed, in response to requests from the home user's terminal, by the service provider and the results are returned to the terminal. In addition to the processing capability, data is stored in the service provider. Because the processing and data storage is performed by the service provider, changes to the programs and/or hardware can the confined to the processing resources of the service provider. In addition, the service provider can be provided with virus and hacking protection, protection that will then not be necessary for the home user's terminal.

Abstract: A process and apparatus provide a JTAG TAP controller (302) to access a JTAG TAP domain (106) of a device using a reduced pin count, high speed DDR interface (202). The access is accomplished by combining the separate TDI and TMS signals from the TAP controller into a single signal and communicating the TDI and TMS signals of the single signal on the rising and falling edges of the TCK driving the DDR interface. The TAP domain may be coupled to the TAP controller in a point to point fashion or in an addressable bus fashion. The access to the TAP domain may be used for JTAG based device testing, debugging, programming, or other type of JTAG based operation.

Abstract: An integrated circuit containing a PMOS transistor with p-channel source/drain (PSD) regions which include a three layer PSD stack containing Si—Ge, carbon and boron. The first PSD layer is Si—Ge and includes carbon at a density between 5×1019 and 2×1020 atoms/cm3. The second PSD layer is Si—Ge and includes carbon at a density between 5×1019 atoms/cm3 and 2×1020 atoms/cm3 and boron at a density above 5×1019 atoms/cm3. The third PSD layer is silicon or Si—Ge, includes boron at a density above 5×1019 atoms/cm3 and is substantially free of carbon. After formation of the three layer epitaxial stack, the first PSD layer has a boron density less than 10 percent of the boron density in the second PSD layer. A process for forming an integrated circuit containing a PMOS transistor with a three layer PSD stack in PSD recesses.

Abstract: This invention includes a state machine entering a first state upon cold reset of the data processing system. Trace information collection and trace information export are prohibited in the first state. The state machine transits from said first state to a second state upon a change in a predetermined bit to a first state. Direct memory access setup is enabled in the second state. The state machine transits from the second state to a third state upon set up of the direct memory access. Trace information collection is enabled in the third state. The state machine transits from the third state to a fourth state upon a direct memory access request corresponding to the direct memory access setup in the second state. Trace data export via direct memory access from the trace collection unit is enabled in the fourth state.

Abstract: A method of processing a video sequence is provided that includes tracking a first object and a second object for a specified number of frames, determining similarity between a trajectory of the first object and a trajectory of the second object over the specified number of frames, and merging the first object and the second object into a single object when the trajectory of the first object and the trajectory of the second object are sufficiently similar, whereby an accurate location and size for the single object is obtained.

Abstract: A method for forming a semiconductor device can include providing a patterned layer of mold compound having a plurality of individual mold compound structures overlying a base film. The plurality of mold compound structures are aligned with a plurality of semiconductor dice to interpose the individual mold compound structures between the plurality of semiconductor dice. A pressure is applied to the individual mold compound structures to fill spaces between each of the plurality of semiconductor dice with the mold compound. The mold compound structures can be formed on the base film using a photosensitive mold compound. The mold compound structures can also be formed through the use of a patterned mask and a screen printing process.

Abstract: A semiconductor device includes a buried layer and a deep contact for providing a low resistive connection to the buried layer. The deep contact is formed by doped polycrystalline silicon. A method of manufacturing a semiconductor device and a deep contact for providing a low resistive connection to the buried layer, with the steps of forming a buried layer, providing an active region adjacent the buried layer and forming a deep contact for providing a low resistive connection to the buried layer by patterning a contact shape for the deep contact on an upper surface of the active region, removing part of the active region underneath the contact shape to create a deep contact cavity. Subsequently a polycrystalline silicon layer for filling the deep contact cavity is deposited and doped.

Abstract: Circuit for detecting malfunction of a primary clock in SoCs comprises a primary clock circuit having a GRAY code counter for generating a GRAY code sequence based on a number of clock pulses generated Primary clock. A secondary clock circuit is configured to output a secondary clock pulse on each saturation of a secondary clock counter. A clock gated register circuit is clocked by the secondary clock pulse, and is configured to store a plurality of values of the GRAY code sequence, and update the plurality of values of the GRAY code sequence on each saturation of the secondary clock counter. An error detection circuit is configured to output a detection signal for detecting the malfunction of primary clock based on a comparison of the updated plurality of values of the GRAY code sequence with at least one predetermined threshold associated with the malfunction of primary clock.

Abstract: A method is provided. A noise shaped signal having a plurality of instants is generated with each instant being associated with at least one of a plurality of output levels. A next phase is selected for each instant, where each next phase is a circularly shifted phase based at least in part on a previous phase for the associated output level for its instant. A plurality of PWM signals is then generated using the phase for each instant, and an amplified signal is generated from the plurality of PWM signals.

Abstract: Embodiments of the invention provide a blending filter based on extended Kalman filter (EKF), which optimally integrates the IMU navigation data with all other satellite measurements (tightly-coupled integration filter). Two more states in the EKF for estimating/compensating the speed bias and the heading bias in the INS measurement are added. The integration filter has no feedback loop for INS calibration, and can estimate/compensate the navigation error in the INS measurement within the integration filter.

Abstract: An automated system, and method of operating the same, for editing the floorplan, placement, and toplevel wiring routing in a layout of an integrated circuit. Components in the layout of the integrated circuit, such components including functional blocks or subchips, and also wire segments of the toplevel wiring, are associated with horizontal reference frames and vertical reference frames. Each reference frame has its position, in the orthogonal direction, specified by a position of a reference line. The positions of subchips and wire segments within the reference frame are expressed as offsets from the reference line. Movement of components is accomplished by moving the reference frame in the orthogonal direction, and updating the reference line position while maintaining the offset values constant.