Abstract: A falling edge controller includes a controller having an inverted TCK (Test Clock) input, a TMS (Test Mode Select) input, a shift register control output, an update register control output, and a shift output; a shift register having a TDI (Test Data In) input, a shift register control input coupled to the shift register control output, address inputs, a select input, address and select outputs, and a TDO (Test Data Out) output; an update register having address and select inputs coupled to the address and select outputs, an update register control input coupled to the update register control output, address outputs coupled to the address inputs, and a select output coupled to the select input; and address circuitry having address inputs coupled to the address outputs, and having an enable output.

Abstract: A system for limiting access to confidential information including storage circuitry for storing the confidential information. An access enabling circuit allows access to the storage circuitry in response to a first level of an enabling signal. A processor generates the enabling signal for a predetermined amount of time in response to sensing of a change of a predetermined value that is produced in response to an act by a person responsible for the confidentiality of the confidential information. The enabling signal assumes a second level after the predetermined amount of time to block access to the storage circuitry.

Abstract: Several methods, systems, and computer program products for quantization of video content are disclosed. In an embodiment, the method includes determining by a processing module, motion information associated with a block of video data of the video content. A degree of randomness associated with the block of video data is determined by the processing module based on the motion information. A value of a quantization parameter (QP) associated with the block of video data is modulated by a quantization module based on the determined degree of randomness.

Abstract: A gate driver includes a drive signal input terminal, a drive signal output terminal, a gate drive circuit, and a serial communication interface. The drive signal input terminal is configured to receive a gate drive signal. The gate drive circuit is coupled to the drive signal input terminal and the drive signal output terminal. The gate drive circuit is configured to provide the gate drive signal to the drive signal output terminal. The serial communication interface is coupled to the drive signal input terminal.

Abstract: A trench capacitor includes at least one epitaxial semiconductor surface layer on a semiconductor substrate having a doping level that is less than a doping level of the semiconductor substrate. A plurality of trenches are formed through at least one half of a thickness of the epitaxial semiconductor surface layer. The epitaxial semiconductor surface layer is thicker than a depth of the plurality of trenches. At least one capacitor dielectric layer lines a surface of the trenches. At least one trench fill layer on the dielectric layer fills the trenches.

Abstract: In one example an amplifier includes a bias circuit, an open-loop gain stage including a first PMOS having a gate coupled to a first node, a source coupled to a second node, a drain coupled to a third node, and a bulk coupled to the bias circuit, a second PMOS having a gate coupled to a ground node, a source coupled to the second node, a drain coupled to a fourth node, and a bulk coupled to the bias circuit, a first NMOS having a drain and a gate coupled to the third node and a source coupled to a fifth node, a second NMOS having a drain coupled to the fourth node, a gate coupled to the third node, and a source coupled to the fifth node, an adjustable resistor coupleable between the third and fourth nodes, and a buffer stage coupled to the open-loop gain stage.

Abstract: A semiconductor device includes a trim storage and an encoder. The trim storage stores trim values. The encoder determines a magnitude of a supply voltage, determines a magnitude of a handle voltage, determines a source-to-handle voltage of a first transistor, and determines a source-to-handle voltage of a second transistor. Further, the encoder determines a target number of selectable first transistor units comprising the first transistor to select for the first transistor. Based on a trim value from the trim storage, the source-to-handle voltage of the first transistor and the source-to-handle voltage of the second transistor, the encoder determines a target number of selectable second transistor units comprising the second transistor to select for the second transistor. The encoder asserts control signals to select the target number of selectable first transistor units and the target number of selectable second transistor units.

Abstract: An algorithm for the promotion of terminal nodes to switch nodes in a PLC network reduces overall network overhead and collisions, while ensuring the appropriate selection of a switch node and minimizing the number of levels in a PLC network. It also ensures that the terminal nodes with appropriate signal-to-noise ratios (SNRs) are promoted. It is desirable to have a network with fewer levels. The disclosed approach favors the nodes that are closer to the DC to promote them as switch nodes. This is achieved by waiting for a smaller number of PNPDUs for a node that is closer to the DC in comparison to a node that is farther away from the DC.

Abstract: A circuit includes an ultrasonic transducer having a first terminal and a second terminal. The first terminal receives an electrical drive signal and excites the ultrasonic transducer during an excitation interval to provide an ultrasound signal. The first terminal also provides an electrical receive signal in response to the ultrasonic transducer receiving a reflected ultrasound signal. The circuit includes a capacitor having one terminal connected to the first terminal of the ultrasonic transducer. A resistor is connected to another terminal of the capacitor to form a resistor-capacitor (RC) network. At least one of resistor and the capacitor have a variable resistance or capacitance value that is set to tune the RC network to mitigate ringing of the ultrasonic transducer following the excitation interval.

Abstract: A system includes a clamp circuit configured to regulate a converter input supply voltage based on control signals. The system also includes a converter configured to the adjust the converter input supply voltage to a converter output supply voltage. The system also includes a controller configured to adjust the control signals for the clamp circuit using a first mode based on the converter output supply voltage and a second mode based on the converter input supply voltage.

Abstract: A method of encoding a first bit and a second bit for transmission on a transmission band is provided. The method includes receiving a bit stream that includes the first and second bits, mapping the first bit into a first symbol, mapping the second bit into a second symbol, differentially encoding at least the first symbol and the second symbol, and causing the first and second symbols to be transmitted on a transmission band as part of a symbol stream.

Abstract: In some examples, a level shifter circuit comprises: a first transistor pair cascoded at a first input node; a second transistor pair cascoded at a second input node, wherein the first and transistor pairs couple at a first node, a second node, a third node, and a fourth node; a third transistor pair coupled to the first transistor pair at the first and the third nodes, wherein the third transistor pair is configured to generate a first bipolar clock signal; a fourth transistor pair coupled to the second transistor pair at the second and the fourth nodes, wherein the fourth transistor pair is configured to generate a second bipolar clock signal; and a clock generation circuit coupled to the first node, the second node, the third node, and the fourth node.

Abstract: An electronic device includes an isolated region surrounded by an isolation ring over a semiconductor substrate. A well of a first conductivity type is located within the isolated region. A source region and a drain region of a second conductivity type are located over the well. A local-oxidation-of-silicon (LOCOS) layer is located on the well between the source and the drain, between the source and the isolation ring, and between the drain and the isolation ring. A gate electrode located between the source and the drain on said LOCOS layer.

Abstract: Aspects of the present disclosure provide for a method. In some examples, the method includes receiving a synchronization signal, dividing the synchronization signal to form a first divided signal and a second divided signal, generating a first ramp signal and a second ramp signal, setting a latch output to a logical high value when the first divided signal has a logical high value or a value of the first ramp signal exceeds a value of a reference signal, setting the latch output to a logical low value when the second divided signal has a logical high value or a value of the second ramp signal exceeds the value of the reference signal, generating a synchronization clock according to the latch output and an inverse of the latch output, and outputting the latch output or the synchronization clock as a clock signal based on a value of a synchronization active signal.

Abstract: Methods, systems, and apparatus to facilitate high side control of a switching power converter are disclosed. An example apparatus includes a latch including a first node coupled to a first source of a first switch and an output coupled to a first gate of the first switch; a first diode coupled to the first node and a second node; a second diode coupled to the second node and ground; a second switch coupled to a voltage source and the second node; and a third switch including a third gate coupled to the second switch, a third source coupled to the second node, and a third drain coupled to the latch.

Abstract: In described examples, a system regulates provision of DC-DC electrical power. The system includes a DC-DC converter, an input voltage node to receive an input voltage, a current source, a voltage source node, and a ground switch. The DC-DC converter includes a flying capacitor and multiple converter switches. The current source is coupled between the input voltage node and a top plate of the flying capacitor, to provide current to the top plate when the current source is activated by an activation voltage. The voltage source node is coupled to the input voltage node and to the current source, to provide the activation voltage to the current source, such that the activation voltage is not higher than a selected voltage between: a breakdown voltage of the converter switches; and a maximum value of the input voltage minus the breakdown voltage. The ground switch is coupled between a bottom plate of the flying capacitor and a ground.

Abstract: A data correction filter includes an equalizer circuit, first, second, and third asynchronous comparators, an error amplifier, a multiplexer, a delay circuit, first and second exclusive-OR gates, and first and second integrator circuits. The first asynchronous comparator is coupled to the equalizer circuit. The second and third asynchronous comparators are coupled to the equalizer circuit and the error amplifier. The multiplexer is coupled to the first, second, and third asynchronous comparators. The delay circuit is coupled to the first asynchronous comparator. The first exclusive-OR gate is coupled to the delay circuit and the multiplexer. The second exclusive-OR gate is coupled to the first asynchronous comparator and the multiplexer. The first integrator circuit is coupled to first exclusive-OR gate and the equalizer circuit. The second integrator circuit is coupled to the second exclusive-OR gate and the error amplifier.

Abstract: A circuit includes a comparator to compare an analog signal to a ramp signal to generate a pulse width modulated output signal and a driver to generate control signals for a plurality of power transistors. A pulse blanking circuit receives the pulse width modulated output signal. For each pulse of the pulse width modulated output signal, the pulse blanking circuit, responsive to a width of the pulse being greater than a threshold, passes the pulse to the driver. Responsive to the width of the pulse being less than the threshold, the pulse blanking circuit prevents the pulse from being passed to the driver.

Abstract: A circuit comprises a CLVS, a LEA coupled to the CLVS, and a peak detector coupled to the CLVS and the LEA, wherein the peak detector is a switch-based peak detector. A method comprises closing a first switch for a period of time to provide a current to an actuator, opening the first switch after the period, measuring, after the opening, a voltage associated with the actuator, and determining, based on the measuring and using an ADC, whether a diode is present in the actuator and coupled with a correct polarity, is missing, or is present in the actuator and coupled with an incorrect polarity.

Abstract: A semiconductor device includes a NMOS transistor with a back gate connection and a source region disposed on opposite sides of the back gate connection. The source region and back gate connection are laterally isolated by an STI oxide layer which surrounds the back gate connection. The NMOS transistor has a gate having a closed loop configuration, extending partway over a LOCOS oxide layer which surrounds, and is laterally separated from, the STI oxide layer. A lightly-doped drain layer is disposed on opposite sides of the NMOS transistor, extending under the LOCOS oxide layer to a body region of the NMOS transistor. The LOCOS oxide layer is thinner than the STI oxide layer, so that the portion of the gate over the LOCOS oxide layer provides a field plate functionality. The NMOS transistor may optionally be surrounded by an isolation structure which extends under the NMOS transistor.