Abstract: As part of the protocol for Common Public Radio Interface/Open Base Station Architecture Initiative (CPRI/OBSAI) systems, timing circuits are used to calculate the “round trip” latency across CPRI/OBSAI links. Traditionally, these timing circuits have been plagued with numerous problems. Here, however, a timing circuit is provided that has improved latency measurement accuracy, reduced power consumption, and a reduced likelihood of detecting a false comma. This is generally accomplished through the use of double edge latching in combination with post processing circuit and single bit transmission between low and high speed clock domains.

Abstract: An optical disk drive system associated with a laser diode is described. The optical disk drive system comprises a current generator for receiving input signals; a current switch coupled to receive timing signals; a current driver coupled to receive output signals from the current switch and the current generator, the current driver further comprising a driver with wave shape control selected from the group consisting of a laser diode read driver and a laser diode write driver, wherein the driver with shape control is operative for transmitting at least one output signal that is a scaled version of at least one of the output signals received from the current generator, wherein the current driver is operative for transmitting at least one output signal driving the laser diode.

Abstract: An electronic circuit includes processors (CPU1, CPU2) operable to make respective voltage requests (Vcpu1, Vcpu2), and a power management circuit (1470) having a controllable supply voltage output (VDD1) is coupled to said processors (CPU1, CPU2) and further has a voting circuit (4520) responsive to the voltage requests (Vcpu1, Vcpu2) and operable to automatically establish a function (Fct) of the respective voltage requests (Vcpu1, Vcpu2) to control the controllable supply voltage output (VDD1).

Abstract: An integrated circuit includes switching circuits for selectively connecting the bond pads to functional core logic and isolating the bond pads from second conductors, and the switch circuits for selectively connecting the bond pads to the second conductors to provide bi-directional connections between the bond pads on opposite sides of the substrate and isolating the bond pads from the functional core logic.

Abstract: Quadrature clocking schemes are widely used in modern communications systems, but often suffer from phase imbalance. Conventional solutions that attempt to address this phase imbalance, however, are generally large and use a substantial amount of power. Here, however, a correction circuit is provided that can locally correct for phase imbalance without the need for bulky and high power consuming circuitry.

Abstract: A power management (PM) system architecture for a controlled SoC detects availability of power supply for signal-driving at a given node inside a chip, and uses a timer, a discharge mechanism with trigger for starting/stopping a discharge process, and a comparator for monitoring a measured voltage of an intended node during the discharge process. Enabling the discharge mechanism for a known time period helps detection. Power supply can be internally generated in the chip or from a source on board. The architecture detects if the node is driven or floating, an undriven floating node causing a dip in the measured voltage. The measured voltage does not have a dip when the node is driven. The architecture is also configured so that when there is a required on-board external power supply, an internal power supply is disabled to avoid a race-condition. The architecture obviates a dedicated IO pin for mode-indication.

Abstract: An integrated circuit (70) having parallel scan paths (824-842, 924-942) includes a pair or pairs of scan distributor (800,900) and scan collector (844,944) circuits. The scan paths apply stimulus test data to functional circuits (702) on the integrated circuit and receive response test data from the functional circuits. A scan distributor circuit (800) receives serial test data from a peripheral bond pad (802) and distributes it to each parallel scan path. A scan collector circuit (844) collects test data from the parallel scan paths and applies it to a peripheral bond pad (866). This enables more parallel scan paths of shorter length to connect to the functional circuits. The scan distributor and collector circuits can be respectively connected in series to provide parallel connections to more parallel scan paths. Additionally multiplexer circuits (886,890) can selectively connect pairs of scan distributor and collector circuits together.

Abstract: Data is communicated through two separate circuits or circuit groups, each having clock and mode inputs, by sequentially reversing the role of the clock and mode inputs. The data communication circuits have data inputs, data outputs, a clock input for timing or synchronizing the data input and/or output communication, and a mode input for controlling the data input and/or output communication. A clock/mode signal connects to the clock input of one circuit and to the mode input of the other circuit. A mode/clock signal connects to the mode input of the one circuit and to the clock input of the other circuit. The role of the mode and clock signals on the mode/clock and clock/mode signals, or their reversal, selects one or the other of the data communication circuits.

Abstract: One-time programmable (OTP) Electronically Programmable Read-Only Memories (EPROMs) have been used in a number of applications for many years. One drawback with these OTP EPROMs is that these nonvolatile memories tend to be slow and/or may use a considerable amount of area. Here, however, a bit cell is provided that employs a compact dual cell, which generally includes two OTP cells. These OTP cells are generally arranged in differential configuration to increase speed and are arranged to have a small impact on area.

Abstract: Bias circuitry for a static random-access memory (SRAM) with a retain-till-accessed (RTA) mode. The memory is constructed of multiple memory array blocks, each including SRAM cells of the 8-T or 10-T type, with separate read and write data paths. Bias devices are included within each memory array block, for example associated with individual columns, and connected between a reference voltage node for cross-coupled inverters in each memory cell in the associated column or columns, and a ground node. In a normal operating mode, a switch transistor connected in parallel with the bias devices is turned on, so that the ground voltage biases the cross-coupled inverters in each cell. In the RTA mode, the switch transistors are turned off, allowing the bias devices to raise the reference bias to the cross-coupled inverters, reducing power consumed by the cells in that mode.

Abstract: A circuit for generating a band gap reference voltage (VREF) includes circuitry (I3×7) for supplying a first current to a first conductor (NODE1) and a second current to a second conductor (NODE2). The first conductor is successively coupled to a plurality of diodes (Q0×16), respectively, in response to a digital signal (CTL-VBE) to cause the first current to successively flow into selected diodes. The second conductor is coupled to collectors of the diodes which are not presently coupled to the first conductor. The diodes are successively coupled to the first conductor so that the first current causes the diodes, respectively, to produce relatively large VBE voltages on the first conductor and the second current causes sets of the diodes not coupled to the first conductor to produce relatively small VBE voltages on the second conductor. The relatively large and small VBE voltages provide differential band gap charges (QCA-QCB) which are averaged to provide a stable band gap reference voltage (VREF).

Abstract: An integrated circuit containing logic transistors and an array of SRAM cells in which the logic transistors are formed in semiconductor material with one crystal orientation and the SRAM cells are formed in a second semiconductor layer with another crystal orientation. A process of forming an integrated circuit containing logic transistors and an array of SRAM cells in which the logic transistors are formed in a top semiconductor layer with one crystal orientation and the SRAM cells are formed in an epitaxial semiconductor layer with another crystal orientation. A process of forming an integrated circuit containing logic transistors and an array of SRAM cells in which the SRAM cells are formed in a top semiconductor layer with one crystal orientation and the logic transistors are formed in an epitaxial semiconductor layer with another crystal orientation.

Abstract: A method of aligning a new pattern to more than one previously defined pattern during the manufacture of an integrated circuit. A method of aligning a photolighography pattern reticle to a first previously defined pattern in a first direction and also aligning the photolithography pattern reticle to a second previously defined pattern in a second direction. A method of aligning a photolighography pattern reticle to two previously defined patterns in the same direction.

Abstract: This invention uses multiple codecs to efficiently achieve the right balance between compression and coverage for a given design. This application illustrates a simple example using two codecs including a high compression codec and a low compression codec. The test engineer generates a first set of test patterns using the high compression codec. If this high compression results in unacceptable fault coverage loss, the top-up patterns for additional coverage are generated using the low compression codec. The invention may use multiple codecs serially one after the other. The codecs can be of different types or parameters (such as compression ratio, debug tolerance and combinational codec versus sequential codec).

Abstract: An apparatus for emitting radiation is provided. The apparatus comprises an antenna formed on a substrate, and a high impedance surface (HIS). The HIS has a plurality of cells formed on the substrate that are arranged to form an array that substantially surrounds at least a portion of the antenna. Each cell generally includes a ground plane, first plate, second plate, and an interconnect. The ground plane is formed on the substrate, while the first plate (which is substantially rectangular) is formed over and coupled to the ground plane. The first plate for each cell is also arranged so as to form a first checkered pattern for the array. The second plate (which is substantially rectangular) is formed over and is substantially parallel to the first plate. The first and second plates are also substantially aligned with a central axis that extends generally perpendicular to the first and second plates hand have a interconnect formed therebetween.

Abstract: The present disclosure describes a novel method and apparatus of using the JTAG TAP's TMS and TCK terminals as a general purpose serial Input/Output (I/O) bus. According to the present disclosure, the TAP's TMS terminal is used as a clock signal and the TCK terminal is used as a bidirectional data signal to allow serial communication to occur between; (1) an IC and an external controller, (2) between a first and second IC, or (3) between a first and second core circuit within an IC.

Abstract: In an ultra high voltage lateral DMOS-type device (UHV LDMOS device), a central pad that defines the drain region is surrounded by a racetrack-shaped source region with striations of alternating n-type and p-type material radiating outwardly from the pad to the source to provide for an adjustable snapback voltage.

Abstract: A method of performing a single step/single solvent edge bead removal (EBR) process on a photolithography layer stack including a photoresist layer and a top coat layer using propylene glycol monomethyl ether acetate (PGMEA) or a mixture of PGMEA and gamma-butyrolactone (GBL) is disclosed. The single step/single solvent EBR process is compatible with organic and inorganic BARC layers.

Abstract: Scan architectures are commonly used to test digital circuitry in integrated circuits. The present invention describes a method of adapting conventional scan architectures into a low power scan architecture. The low power scan architecture maintains the test time of conventional scan architectures, while requiring significantly less operational power than conventional scan architectures. The low power scan architecture is advantageous to IC/die manufacturers since it allows a larger number of circuits (such as DSP or CPU core circuits) embedded in an IC/die to be tested in parallel without consuming too much power within the IC/die. Since the low power scan architecture reduces test power consumption, it is possible to simultaneously test more die on a wafer than previously possible using conventional scan architectures. This allows wafer test times to be reduced which reduces the manufacturing cost of each die on the wafer.

Abstract: An integrated circuit containing an SRAM array having a strap row. The strap row has a substrate contact structure that includes a substrate contact plug and a tap layer.