Abstract: First and second transconductance amplifier input stages having first and second gain characteristics, respectively, are combined. The resulting combined input stage has a third gain characteristic with a linear range that is larger than a linear range of either of the first and second gain characteristics.

Abstract: Testing of die on wafer is achieved by; (1) providing a tester with the capability of externally communicating JTAG test signals using simultaneously bidirectional transceiver circuitry, (2) providing die on wafer with the capability of externally communicating JTAG test signals using simultaneously bidirectional transceiver circuitry, and (3) providing a connectivity mechanism between the bidirectional transceiver circuitry's of the tester and a selected group or all of the die on wafer for communication of the JTAG signals.

Abstract: One embodiment includes a power supply system including a transformer comprising a primary, secondary, and auxiliary winding that are magnetically coupled. The system also includes a switch stage that generates a current through the primary winding in response to activation of a switch based on a control signal that is generated based on a feedback voltage associated with the auxiliary winding. The current can be induced in the secondary winding. The system also includes an output stage coupled to the secondary winding and that generates an output voltage based on the current induced in the secondary winding. The system further includes a feedback stage coupled to the auxiliary winding and comprising a discriminator configured to determine a zero-current condition associated with the current induced in the auxiliary winding based on monitoring a change in slope of the feedback voltage and to measure the feedback voltage during the zero-current condition.

Abstract: An integrated circuit containing an SRAM may be formed using one or more periodic photolithographic patterns for elements of the integrated circuit such as gates and contacts, which have alternating line and space configurations in SRAM cells. Strap rows of the SRAM containing well ties and/or substrate taps which have SRAM cells on two opposite sides are configured so that the alternating line and space configurations are continuous across the regions containing the well ties and substrate taps.

Abstract: Embodiments of the systems and methods of direct cell attachment for battery cells disclosed herein operate without the protection FETs and the protection IC, thereby enabling the direct attachment of battery cells to the system without compromising safety. A charger IC comprises a switching regulator whose output is used to charge the battery through a pass device. In example embodiments of the disclosed systems and methods of direct cell attachment, a combination of switching FETs and the pass device are used as a protection device instead of the charge and discharge FETs. During normal operation, the pass device may be used to charge the battery using the traditional battery charging profile. Under fault condition, the switching FETs and pass device may be driven appropriately to protect the system.

Abstract: A SerDes corn link with a retiming receiver is operable in link training (LT) mode. A SerDes transmitter includes a TX FIR channel driver to transmit TX Data with TX pre-emphasis EQ based on TX FIR coefficients. The retiming receiver includes an RTE (retimer/reclocker) with an RT FIR driver outputting retimed RX Data based on RT FIR coefficients. A link training unit (LTU) adjusts RT FIR coefficients based on a comparison of impulse cursor information for RX Data signals received at the RTE input and re-timed RX Data signals output from the RT FIR, so that the adjusted RT FIR coefficients correspond to the TX FIR coefficients (including reflecting LT changes in TX pre-emphasis EQ). In effect, the LTU performs a linear FIR coefficient translation from the TX FIR to the RT FIR, propagating LT FIR coefficient changes from RTE input to output.

Abstract: Systems and methods of driving multiple outputs are provided in which a single inductor may be used to drive multiple output such as independent strings of LEDs or white LEDs (WLEDs). In an example embodiment, a boost DC to DC converter may be used with a single inductor to drive multiple outputs. In an example embodiment, the error voltage of each of the multiple outputs is sampled during each cycle of the DC to DC converter and the largest error voltage is determined for that cycle. Power from the DC to DC converter is then supplied to that output during that cycle.

Abstract: This invention combines a multicore shared memory controller and an asynchronous protocol converting bridge to create a very efficient heterogeneous multi-processor system. After traversing the protocol converting bridge the commands travel through the regular processor port. This allows the interconnect to remain unchanged while having any combination of different processors connected. This invention tightly integrates all of the processors into the same memory controller/interconnect.

Abstract: A novel modification to the order statistics filters called the Adaptive Weighted-Local-Difference Order Statistics is shown that will act as a generic framework for the design of adaptive filters suitable for specific signal processing applications. To demonstrate the design of filters using this framework two implementations were defined and evaluated: Edge Orientation Adaptive Weighted-Local-Difference Median Filter (EOAWLDMF) and Luminance-Similarity Adaptive Weighted-Local-Difference Median Filter (LSAWLDMF) for restoration of noisy images.

Abstract: Data transfer devices and methods for transferring data between first and second circuits are disclosed. A data transfer device includes a first circuit having a plurality of data channels, wherein at least one of the data channels is an active data channel. A serializer has a plurality of inputs and an output, wherein the inputs are coupled to the plurality of data channels. The serializer is for coupling only one active channel at a time to the output. An isolation barrier is coupled to the output of the serializer, the isolation attenuates transients and passes the fundamental frequency. A second circuit includes a deserializer having an input and at least one output, the input is coupled to the isolation barrier, the at least one output is at least one active data channel.

Abstract: An electronic package that has an array of pins may be tested for shorts and continuity in a parallel manner. The array of pins are allocated to four or more groups of pins such that each pin in each group is not adjacent to a pin from its own group of pins. One of the groups of pins is tested for continuity while placing a reference voltage level on all of the pins in the other groups of pins. A separate current source is coupled to each pin and a resultant voltage is measured. A short between one of the pins in the first group and a pin in one of the other groups can be detected when the resultant voltage on one of the pins in the first group is approximately equal to the reference voltage. Group-wise testing is repeated until all groups have been tested.

Abstract: Read margin measurement circuitry for measuring the read margin of floating-gate programmable non-volatile memory cells. In some embodiments, the read margin of a cell with a floating-gate transistor in a non-conductive state is measured by periodically clocking a counter following initiation of a read cycle; a latch stores the counter contents upon the cell under test making a transition due to leakage of the floating-gate transistor. Logic for testing a group of cells in parallel is disclosed. In some embodiments, the read margin of a cell in which the floating-gate transistor is set to a conductive state is measured by repeatedly reading the cell, with the output developing a voltage corresponding to the duty cycle of the output of the read circuit.

Abstract: An integrated circuit containing a memory and a sense amplifier. The integrated circuit also containing an extended delay circuit which extends the delay between when a precharged bitline is floated and when a wordline is enabled. A method of testing an integrated circuit to identify bitlines with excessive leakage.

Abstract: A method of canceling nonlinear distortions in pulse width modulated signals includes receiving an input signal. A first signal that is the modulated input signal is generated. The first signal has quantized levels representing the input signal. A pulse width modulated (PWM) sequence that is representative of the first signal is generated. A second signal that is the PWM sequence mixed with a carrier signal is generated. An error signal is generated in response to the first signal and modeled from the second signal. The error signal is added to the input signal.

Abstract: The differential signals at the outputs of a differential amplifier quickly change in response to common mode changes in the output differential signals. The amplified input signals amplified by the differential amplifier quickly change in response to common mode changes in the differential signals input into the differential amplifier. A bias voltage input to the differential amplifier is isolated to remove low-frequency components from the bias voltage.

Abstract: A method of making a QFD package including providing a clip and coating at least a first end portion of the clip with solder paste.

Abstract: A heated capacitor runs current through either a lower metal plate, an upper metal plate, a lower metal trace that lies adjacent to a lower metal plate, an upper metal trace that lies adjacent to an upper metal plate, or both a lower metal trace that lies adjacent to a lower metal plate and an upper metal trace that lies adjacent to an upper metal plate to generate heat from the resistance to remove moisture from a moisture-sensitive insulating layer.

Abstract: A semiconductor device includes MOSFET cells having a drift region of a first conductivity type. A first and second active area trench are in the drift region. A split gate uses the active trenches as field plates or includes planar gates between the active trenches including a MOS gate electrode (MOS gate) and a diode gate electrode (diode gate). A body region of the second conductivity type in the drift region abutts the active trenches. A source of the first conductivity type in the body region includes a first source portion proximate to the MOS gate and a second source portion proximate to the diode gate. A vertical drift region uses the drift region below the body region to provide a drain. A connector shorts the diode gate to the second source portion to provide an integrated channel diode. The MOS gate is electrically isolated from the first source portion.

Abstract: A trench MOSFET device includes a semiconductor layer of a first doping type. MOS transistor cells are in a body region of a second doping type in the semiconductor layer. The transistor cells include a first cell type including a first trench providing a first gate electrode or the first gate electrode is on the semiconductor surface between the first trench and a second trench, and a first source region is formed in the body region. The first gate electrode is electrically isolated from the first source region. A second cell type has a third trench providing a second gate electrode or the second gate electrode is on the semiconductor surface between the third trench and a fourth trench, and a second source region is in the body region. An electrically conductive member directly connects the second gate electrode, first source region and second source region together.

Abstract: A process is disclosed of forming metal replacement gates for PMOS transistors with oxygen in the metal gates such that the PMOS gates have effective work functions above 4.85. Metal work function layers in the PMOS gates are oxidized at low temperature to increase their effective work functions to the desired PMOS range. Hydrogen may also be incorporated at an interface between the metal gates and underlying gate dielectrics. Materials for the metal work function layers and processes for the low temperature oxidation are disclosed.