Abstract: According to one embodiment of the present invention a memory subsystem comprises a column and a column select signal line. The column comprises at least one bit line and a write precharge circuit. The write precharge circuit is operable to provide at least a portion of a charge on the at least one bit line. The column select signal line is operable to provide a column select signal selecting the column for a write operation. The write precharge circuit is gated with the column select signal line such that the column select signal is communicated to the write precharge circuit upon selection of the column for the write operation. The write precharge circuit is operable to at least partially restore the charge on the at least one bit line upon receipt of the column select signal after the write operation.

Abstract: System and method for providing type-II (and higher order) phase-locked loops (PLLs) with a fast signal acquisition mode. A preferred embodiment comprises a loop filter with a proportional loop gain path (proportional loop gain circuit 1115) and an integral loop gain block (integral loop gain block 1120). The proportional loop gain path is used during signal acquisition to provide large loop bandwidth, hence fast signal acquisition of a desired signal. Then, during the PLL's signal tracking phase, the integral loop gain block is enabled and its output is combined with output from the proportional loop gain path to provide higher order filtering of the desired signal. An offset that may be present due to the use of the proportional loop gain path can be measured and subtracted to help improve signal tracking settling times.

Abstract: The present invention provides, in one embodiment, method of forming a barrier layer 300 over a semiconductor substrate 110. The method comprises forming an opening 120 in an insulating layer 130 located over a substrate thereby uncovering an underlying copper layer 140. The method further comprises exposing the opening and the underlying copper layer to a plasma-free reducing atmosphere 200 in the presence of a thermal anneal. The also comprises depositing a barrier layer in the exposed opening and on the exposed underlying copper layer. Such methods and resulting conductive structures thereof may be advantageously used in methods to manufacture integrated circuits comprising copper interconnects.

Abstract: A low-pass filter in a read channel, having an adjustable cutoff frequency has a low-pass filter 14, a time measuring circuit 15, a storage computing circuit 19 and a current supply circuit 18. The time measuring circuit 15 computes the pulse number of a reference clocking signal. The storage computing circuit 19 obtains the mean value of first and second set values that correspond to current values of the control current when the pulse number of the reference clocking signal increases by 1, and the current supply circuit 18 supplies a control current equivalent to the mean value to the low-pass filter 14. Therefore, even if the same pulse number is computed more than once, the desired current set value can be obtained from the mean value of the first and the second set values, and a control current amount that corresponds to said current set value can be supplied.

Abstract: A semiconductor circuit for protecting an I/O pad against ESD events comprising a pMOS transistor (510) in a first n-well (511) having its source connected to Vdd and the first n-well, and its drain connected to the I/O pad; the transistor has a finger-shaped contact (513) to the first n-well. Further a finger-shaped diode (520) with its cathode (521) located in a second n-well and connected to the I/O pad, and its anode connected to ground. The anode is positioned between the cathode and the first n-well, whereby the finger-shaped anode and cathode are oriented approximately perpendicular to the finger-shaped transistor n-well contact. Further a third finger-shaped n-well (551) positioned between the first n-well and the diode, the third n-well connected to ground and approximately perpendicular to the first n-well contact, acting as a guard wall (550).

Abstract: Combining a graphics object with a picture where only the luminance value of a graphics object pixel is written to a corresponding picture pixel if the chrominance values of the graphics object pixel indicate transparency and yet the luminance value indicates non-transparency.

Abstract: The objective of this invention is to provide a semiconductor device and its manufacturing method with which the offset can be kept fixed even in high breakdown voltage MOS transistors, and that can accommodate high voltages for high breakdown voltage MOS transistors and miniaturization of MOS transistors for low voltage drive. Its constitution provides for inner side wall insulating films 14 and 24 and outer side wall insulating films 16 and 26 formed at both sides of the gate electrodes 12 and 22 in both high breakdown voltage transistor TR2 and transistor TR1 for low voltage drive, and heavily doped region 27 is formed in breakdown voltage transistor TR2 using both inner side wall insulating film 24 and outer side wall insulating film 26 as masks so that offset D2 is controlled by the combined widths of the two side wall insulating films. In transistor TR1 for low voltage drive, heavily doped region 15 is formed using only inner side wall insulating film 14 as the mask, and offset d1 is controlled.

Abstract: A technique to pre-charge a CAM block array including a plurality of CAM blocks that is organized into at least one rectangular array having rows each having a plurality of CAM blocks, an associated GMAT line, an associated LMAT line, and a group of CAM cells. The pre-charge technique of the present invention accommodates for all CAM block configurations without compromising performance at the cost of silicon area. In one example embodiment, this is accomplished by precharging each LMAT line in the CAM block array. A predetermined amount of delay is then applied substantially after precharging each LMAT line. Each GMAT line in the CAM block array is then precharged.

Abstract: A digital system and method of operation is which the digital system has a processor with a virtual machine environment for interpretively executing instructions. First, a sequence of instructions is received (404) for execution by the virtual machine. The sequence of instructions is examined (408–414) to determine if a certain type of iterative sequence is present. If the certain type of iterative sequence is present, the iterative sequence is replaced (412) with a proprietary code sequence. After the modifications are complete, the modified sequence is executed in a manner that a portion of the sequence of instructions is executed in an interpretive manner (418); and the proprietary code sequences are executed directly by acceleration circuitry (420).

Abstract: System and method are implemented to allow phase lock loop (PLL) status testing during a Serializer/Deserializer (SERDES) internal loopback built-in self-test (BIST). An existing pseudo random binary sequence (PRBS) data generator is modified to include a mode that produces a data pattern having a frequency content low enough to be verified on the tester used at the probe.

Abstract: In a method of fabricating complementary bipolar transistors with SiGe base regions the base regions of the NPN and PNP transistors are formed one after the other over two collector regions 20, 14 by epitaxial deposition of crystalline silicon-germanium layers 32a, 36a. With this method the germanium profile of the SiGe layers can be freely selected for both NPN and PNP transistors in thus enabling complementary transistor performance to be optimized individually. The SiGe layers 32a, 36a can be doped with an n-type or p-type dopant during or after deposition of the silicon-germanium layers 32a, 36a.

Abstract: A data synchronization arrangement is provided that is fail-safe at high speed and low power consumption, for exchanging clocked data between different clock domains running in a digital processing equipment at the same clock frequency but at an arbitrary relative phase shift. A register arrangement has a predetermined number of parallel registers, each register having a data input, a write clock input, a read clock input and a data output. A write select multiplexer has an input receiving a write clock signal from a first clock domain, one clock output for each of the parallel registers and connected to a write clock input of a respective register, and one write select input for each clock output. A read select multiplexer has an input receiving a read clock signal from a second clock domain, one clock output for each of the parallel registers and connected to a read clock input of a respective register, and one read select input for each clock output.

Abstract: A distributed conferencing system having a plurality of conferencing nodes to connect groups of participants to a conference. Each of the conferencing nodes provides for the connection of one or more participants to the conference. Each node includes a DSP for distributed signal processing. The node DSP includes: A signal measuring device for measuring features of the signals from each of the participants, such as power, zero crossing rate and short term energy and voice activity determination and feature extraction from the signals of the participants connected to each node. Each node has a single core speaker tracking algorithm for determining the relative features of each of the number of participant input signals. The speaker tracking compares the characteristics of the speakers of the core and determines which speakers are to be included and which speakers are to be excluded from presentation to the other nodes in the conference.

Abstract: A processor comprises decode logic that determines an instruction type for each instruction fetched, a first level cache, a second level cache coupled to the first level cache, and control logic operatively coupled to the first and second level caches. The control logic preferably causes cache linefills to be performed to the first level cache upon cache misses for a first type of instruction, but precludes linefills from being performed to the first level cache for a second type of instruction.

Abstract: In a method and system for data retention, a data input is latched by a first latch. A second latch coupled to the first latch receives the data input for retention while the first latch is inoperative in a standby power mode. The first latch receives power from a first power line that is switched off during the standby power mode. The second latch receives power from a second power line. A controller receives a clock input and a retention signal and provides a clock output to the first latch and the second latch. A change in the retention signal is indicative of a transition to the standby power mode. The controller continues to hold the clock output at a predefined voltage level and the second latch continues to receive power from the second power line in the standby power mode, thereby retaining the data input.

Abstract: A fly height controller circuit for a disk drive head having a resistive heater is disclosed. The fly height controller includes an error amplifier that controls a variable current source driving the resistive heater. The error amplifier compares a desired heater power signal with a feedback power signal that is generated by a multiplier. The multiplier receives a signal corresponding to the resistive heater current, for example as generated by a second variable current source also controlled by the error amplifier, and a signal corresponding to a voltage across the resistive heater. A first differential amplifier develops a differential voltage corresponding to the heater voltage. A second differential amplifier is biased by the resistive heater current signal, and receives the differential voltage form the first differential amplifier. A differential current generated by the second differential amplifier produces the feedback power signal as an output voltage.

Abstract: A wireless device for routing data in a mesh network is provided. The wireless device includes a component operable to obtain metrics related to one or more directly adjacent links in the mesh network and metrics received from one or more other nodes in the mesh network. The component is operable to apply parameters that include weighting to one or more of the metrics to compute one or more routes for routing data. The wireless devices also includes a transmitter that is operable to propagate to one or more adjacent nodes in the mesh network routing information related to the parameterized metrics obtained by the component.

Abstract: A double diffused region (65), (75), (85) is formed in an epitaxial layer (20). The double diffused region is formed by first implanting light implant specie such as boron through an opening in a photoresist layer prior to a hard bake process. Subsequent to a hard bake process heavy implant specie such as arsenic can be implanted into the epitaxial layer. During subsequent processing such as LOCOS formation the double diffused region is formed. A dielectric layer (120) is formed on the epitaxial layer (20) and gate structures (130), (135) are formed over the dielectric layer (120).

Abstract: A tracking circuit in a memory unit which generates sense enable signals at optimal time instances. The tracking circuit includes a scalable driver block containing a number of dummy cells, each having a drive strength identical to the drive strength of a cell in a memory array. The dummy cells are turned on and drive a column as would the memory cells in the memory array. As a result, the scalable driver block approximates the delay caused by (a number of rows in) a column at least when the number of rows is large. An inverse control logic emulates the delay in case of a smaller number of rows, and one of the inverse control logic and the scalable driver blocks provides a pulse, which is used to trigger a sense operation.

Abstract: The present invention facilitates semiconductor device fabrication by providing mechanisms for utilizing different isolation schemes within embedded memory and other logic portions of a device. The isolation mechanism of the embedded memory portion is improved relative to other portions of the device by increasing dopant concentrations or reducing the depth of the dopant profiles within well regions of the embedded memory array. As a result, smaller isolation spacing can be employed thereby permitting a more compact array. The isolation mechanism of the logic portion is relatively less than that of the embedded memory portion, which permits greater operational speed for the logic.