Abstract: Systems and methods are provided for performing a background calibration technique on one or more stages of a pipeline Analog-to-Digital Converter (ADC). The systems and methods employs a slow but accurate analog-to-digital converter or a slow but accurate ideal pipeline stage to correct for the residue errors in a non-ideal pipeline stage using an error function and a correction algorithm. The correction algorithm determines optimal parameters of the error function, so that the error function can be utilized to compensate for errors in the ADC. The correction algorithm and results can be applied in the digital domain or in the analog domain.

Abstract: In-circuit-emulation of an integrated circuit including a digital data processor capable of executing program instructions selectively assigns emulation resources to either the emulation function or the application program. Each emulation resource can have three states: unassigned; an emulation state assigned to emulation function; or an application state assigned to the application program. An emulation resource in the unassigned state may be assigned to emulation or application by writing to a predetermined data register. Emulation resources assigned to emulation return to unassigned state upon a test logic reset. Emulation resources assigned to the application return to the unassigned state upon an integrated circuit logic reset.

Abstract: A data processing apparatus includes a central processing unit and a memory configurable as cache memory and directly addressable memory. The memory is selectively configurable as cache memory and directly addressable memory by configuring a selected number of ways as directly addressable memory and configuring remaining ways as cache memory. Control logic inhibits indication that tag bits matches address bits and that a cache entry is the least recently used for cache eviction if the corresponding way is configured as directly addressable memory. In an alternative embodiment, the memory is selectively configurable as cache memory and directly addressable memory by configuring a selected number of sets equal to 2M, where M is an integer, as cache memory and configuring remaining sets as directly addressable memory.

Abstract: A closed loop feedback system adaptively controls the compression ratio in a Raster Image Processor. The image content is analyzed in real time, and rasterized bitmap is compressed to a sufficient degree to fit into the available frame buffer. This compression may be done by a variety of algorithms depending on image content. The compression ratio is adjusted on the fly by changing the method of compression, more aggressive or selective quantizing of the image, or by a decimation of parts of the image. The algorithms show will execute very efficiently on a Texas Instruments TMS320C82 multiprocessing DSP. Several methods of implementation on the TMS320C82 are shown.

Abstract: A technique of time dithering a fully digitally-controlled oscillator (DCO) tuning input employs a shift register 1306 and a multiplexer 1308 responsive to a sigma-delta modulated delay control to minimize spurious tones generated by a DCO 200. The shift register 1306 is clocked via a divided-down high-frequency reference provided by the DCO 200 output signal. The multiplexer 1308 is clocked via a frequency reference that is reclocked and synchronized to the DCO 200 output signal. The multiplexer 1308 output is thus time dithered in response to a delay control to minimize perturbations caused by switching.

Abstract: Treating a low-k dielectric layer (104) using a highly oxidizing wet solution (e.g., H2SO4) to improve patterning. Resist poisoning occurs due to an interaction between low-k films (104), such as OSG, and DUV resist (130,132). The wet treatment is performed to either pre-treat a low-k dielectric (104) before forming the pattern (130,132) or during a rework of the pattern (130,132) to reduce resist poisoning.

Abstract: A method of determining the thickness of a thickness of a first layer of material in a semiconductor device using a reflectometer, the first layer of material being disposed outwardly from a second layer of material, the first and second layer of material both including silicon. The method includes generating at least one predicted behavior curve associated with a depth profile of an interface between the first and second layer of material, the predicted behavior curve including at least one expected optical measurement, the depth profile associated with the interface being present at a particular theoretical depth. The method also includes emitting light onto a surface of the semiconductor device. The method further includes collecting at least one optical measurement from portions of the emitted light that are reflected by the semiconductor device.

Abstract: An adaptive hopping scheme for a wireless communication device (e.g., a Bluetooth-enabled device) takes into account current channel conditions when creating the sequence of hop frequencies. Preferably, the adaptive hopping sequence groups good channels together and bad channels together to minimize instances in which a good channel follows a bad channel and vice versa.

Abstract: A method for reducing transmit echo in a DSL modem comprises selecting at least one cancellation device of a plurality of cancellation devices. An attenuation signal is generated using the selected cancellation device. At least a portion of transmit echo is removed from a receive signal using the attenuation signal.

Abstract: Quasi-parallel read/write interleaver architecture for data blocks by sequential spreading of variable size data subblocks into memory banks with bank address contention initiating the next data subblock. Iterative Turbo decoders with MAP decoders use such quasi-parallel interleavers and deinterleavers.

Abstract: The objective of this invention is to provide a type of semiconductor integrated circuit which can lessen solution in the circuit area to the minimum necessary level, and can lessen the leakage current in the standby state so as to cut the power consumption, and which allows Iddq test to determine whether it is passed or defective. Logic circuit 10 composed of low threshold voltage transistors and switching circuit 20 composed of transistors having the standard threshold voltage are set. In the operation, the switching circuit is turned ON, and a driving current is fed to logic circuit 10. On the other hand, in the standby mode, the switching circuit is turned OFF, and the path of the leakage current is cut off to lessen generation of the leakage current. In the case of Iddq test, different bulk bias voltages are applied to the channel regions of PMOS transistors and NMOS transistors from an IC tester through pads P1 and P2.

Abstract: The circuit configuration for the generation of a reference voltage (Vref) contains a reference voltage source (12) and a storage capacitor (C2) to which a voltage provided by a reference voltage source (12) can be applied via a controllable switch. The charging voltage of this storage capacitor (C1) is the reference voltage to be generated. The controllable switch (P1) is a MOS field-effect transistor with back gate (24) which, by means of a refresh signal supplied by a control circuit (22), can be put periodically into either a conducting or a non-conducting state. The back gate (24) of the MOS fieldeffect transistor (P1) is connected to an auxiliary storage capacitor (C2) to which the voltage supplied by the reference voltage source (12) can be applied via a further switch, consisting of a MOS field-effect transistor (P2) with back gate (26), and which is also controlled by the refresh signal.

Abstract: Thick film bond surfaces (8) on a support structure (10), such as a ceramic substrate or an IC package substrate, tend to deform during processing. A personality kit (16) having raised bosses (24) engages with and compresses the bond surfaces, resulting in a flatter, wider bond surface having improved reflectivity. The personality kit (16) is fit within a clamp (30) that can be used as a stand-alone unit or integrated into an existing machine, such as a wire bonder (46).

Abstract: The number of good IC (Integrated Circuit) chips per wafer or time to print a wafer is optimized by examining a number of prospective chip-to-wafer offsets, and, for each offset, a number of prospective arrangements of reticle exposures (shot maps). Integrating such a shot map optimization sub-system with a reticle layout (frame generation) sub-system permits creation of an optimal shot map for an IC chip of known size. These two sub-systems can also be used iteratively to explore a range of possible chip sizes, presenting the results in a simple graphical form. The instant invention integrates shot map optimization, frame generation and chip size optimization/visualization into a single system, providing the chip designer with insight into the impact of chip size on manufacturability.

Abstract: A method for attaching an integrated circuit chip to an organic substrate comprising the steps of providing an integrated circuit chip having an active and a passive surface, said active surface including a protective polymer layer; activating said polymer layer by exposing it to reactive ion etching plasma, thereby increasing the surface roughness and imparting affinity to adhesion; providing an electrically insulating substrate having first and second surfaces; and contacting said second surface of said substrate to said activated polymer layer on said chip, whereby strong adhesion is exerted at the interface between said layer and said substrate, directly attaching said substrate to said chip.

Abstract: The present invention relates to a trimmable oscillator circuit which comprises a comparator circuit operable to compare an output voltage of the oscillator circuit to a reference voltage and output a control signal in response thereto. The oscillator circuit further comprises an output capacitor, wherein a voltage at a node of the capacitor comprises the output voltage of the oscillator circuit, and the oscillator circuit also comprises a selectively trimmable charge/discharge circuit coupled between the comparator circuit and the output capacitor. The charge/discharge circuit is operable to charge or discharge the output capacitor based on the control signal, wherein a rate of charge or discharge is dictated by one or more user selectable control signals. Thus an oscillation frequency of the oscillator circuit may be trimmed.

Abstract: Deter the lowering of the efficiency of data exchange in a data processing device that conducts data communications by using a serial bus conforming to the IEEF 1394 Standards.

Abstract: A circuit combination (16,86) is presented for providing digital signals indicative of slew rates of drive signals (112,140) provided to H-bridge power drive transistors (60,62,64) of motor windings (66) of a mass data storage device (10). The circuit combination includes a plurality of predriver circuits (53-55) producing predrive signals according to a commutation sequence for connection to respective the power drive transistors (60,62,64). A multiplexer (40) is connected to selectively direct at least some of the drive signals to a multiplexer output port, and a digital comparison circuit (86) receives the at least some drive signals from the multiplexer output port and produces a digital outputs (120,158) having state time changes in dependence upon rise and fall times of the predriver output signals.

Abstract: According to one embodiment of the present invention, a semiconductor structure includes an SOI memory cell having a pass transistor having a body and a driver transistor having a body. The SOI memory cell also includes a source voltage contact coupling the bodies of the pass transistor and the driver transistor and a non-square conductive active region coupled to the source voltage contact. The shortest distance between the body of the pass transistor and the source voltage contact is greater than the shortest distance between the body of the pass transistor and the body of the driver transistor, and the shortest distance between the body of the pass transistor and the non-square conductive active region is less than the shortest distance between the bodies of the pass transistor and the driver transistor.

Abstract: A semiconductor device and method for reducing dopant loss includes forming a gate electrode of an MOS transistor adjacent a semiconductor substrate. A relatively thin oxide screen layer is formed and disposed outwardly from the gate electrode. Nitrogen is then incorporated into the oxide screen layer. An upper dielectric layer is formed such that it is disposed outwardly from the nitrided oxide screen layer.